Preface |
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xiii | |
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PART I INTRODUCTION TO SEMICONDUCTORS |
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Semiconductor Crystals: The Atomic-Bond Model |
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3 | (28) |
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4 | (8) |
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4 | (3) |
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7 | (3) |
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10 | (2) |
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12 | (9) |
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Two Types of Current Carriers in Semiconductors |
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13 | (2) |
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15 | (2) |
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Electroneutrality Equation |
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17 | (1) |
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Electron and Hole Generation and Recombination in Thermal Equilibrium |
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18 | (3) |
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Basics of Crystal Growth and Doping Techniques |
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21 | (10) |
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Crystal-Growth Techniques |
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21 | (3) |
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24 | (2) |
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26 | (2) |
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28 | (2) |
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30 | (1) |
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Quantum Mechanics and the Energy-Band Model |
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31 | (66) |
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32 | (13) |
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De Broglie Relationship Between Particle and Wave Properties |
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32 | (1) |
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Wave Function and Wave Packet |
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33 | (5) |
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38 | (7) |
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Energy Levels in Atoms and Energy Bands in Crystals |
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45 | (9) |
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45 | (2) |
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47 | (2) |
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Energy Gap and Energy Bands in Semiconductors and Insulators |
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49 | (5) |
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Electrons and Holes as Particles |
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54 | (12) |
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Effective Mass and Real E--k Diagrams |
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54 | (4) |
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The Question of Electron Size: The Uncertainty Principle |
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58 | (4) |
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Density of Electron States |
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62 | (4) |
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Population of Electron States: Concentrations of Electrons and Holes |
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66 | (31) |
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Fermi--Dirac Distribution |
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67 | (5) |
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Maxwell--Boltzmann Approximation and Effective Density of States |
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72 | (6) |
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Fermi Potential and Doping |
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78 | (7) |
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Nonequilibrium Carrier Concentrations and Quasi-Fermi Levels |
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85 | (2) |
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87 | (3) |
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90 | (4) |
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94 | (3) |
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97 | (33) |
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Energy Bands with Applied Electric Field |
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97 | (3) |
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Energy-Band Presentation of Drift Current |
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98 | (2) |
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Resistance and Power Dissipation due to Carrier Scattering |
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100 | (1) |
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Ohm's Law, Sheet Resistance, and Conductivity |
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100 | (12) |
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Designing Integrated-Circuit Resistors |
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101 | (6) |
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Differential Form of Ohm's Law |
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107 | (3) |
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110 | (2) |
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112 | (18) |
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Thermal and Drift Velocities |
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112 | (3) |
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115 | (1) |
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Scattering Time and Scattering Cross Section |
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116 | (2) |
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118 | (5) |
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123 | (2) |
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125 | (1) |
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126 | (3) |
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129 | (1) |
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130 | (18) |
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Diffusion-Current Equation |
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130 | (3) |
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133 | (6) |
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133 | (3) |
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Haynes--Shockley Experiment |
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136 | (2) |
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138 | (1) |
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Basic Continuity Equation |
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139 | (9) |
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144 | (1) |
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145 | (1) |
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146 | (2) |
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Generation and Recombination |
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148 | (39) |
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Generation and Recombination Mechanisms |
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148 | (3) |
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General Form of the Continuity Equation |
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151 | (6) |
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Recombination and Generation Rates |
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151 | (2) |
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Minority-Carrier Lifetime |
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153 | (3) |
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156 | (1) |
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Generation and Recombination Physics and Shockley--Read--Hall (SRH) Theory |
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157 | (30) |
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Capture and Emission Rates in Thermal Equilibrium |
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158 | (3) |
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Steady-State Equation for the Effective Thermal Generation--Recombination Rate |
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161 | (6) |
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167 | (7) |
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Surface Generation and Recombination |
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174 | (4) |
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178 | (2) |
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180 | (2) |
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182 | (5) |
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PART II FUNDAMENTAL DEVICE STRUCTURES |
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187 | (55) |
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187 | (12) |
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P--N Junction in Thermal Equilibrium: Built-in Voltage |
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187 | (4) |
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Reverse-Biased P--N Junction |
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191 | (2) |
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Forward-Biased P--N Junction |
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193 | (2) |
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195 | (4) |
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199 | (14) |
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Basic Current--Voltage (I--V) Equation |
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199 | (8) |
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Important Second-Order Effects |
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207 | (4) |
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211 | (2) |
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Capacitance of Reverse-Biased P--N Junction |
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213 | (15) |
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214 | (1) |
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Depletion-Layer Width: Solving the Poisson Equation |
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215 | (13) |
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SPICE Model for the Depletion-Layer Capacitance |
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228 | (1) |
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228 | (14) |
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Stored Charge and Transit Time |
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228 | (1) |
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Relationship Between the Transit Time and the Minority-Carrier Lifetime |
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229 | (1) |
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Switching Characteristics: Reverse-Recovery Time |
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230 | (2) |
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232 | (3) |
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235 | (5) |
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240 | (2) |
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Metal--Semiconductor Contact and MOS Capacitor |
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242 | (44) |
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Metal--Semiconductor Contact |
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243 | (9) |
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Schottky Diode: Rectifying Metal--Semiconductor Contact |
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243 | (8) |
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Ohmic Metal-Semiconductor Contacts |
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251 | (1) |
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252 | (34) |
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Properties of the Gate Oxide and the Oxide-Semiconductor Interface |
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253 | (4) |
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C--V Curve and the Surface-Potential Dependence on Gate Voltage |
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257 | (8) |
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265 | (11) |
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Flat-Band Capacitance and Debye Length |
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276 | (3) |
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279 | (1) |
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280 | (4) |
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284 | (2) |
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286 | (61) |
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286 | (16) |
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286 | (3) |
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MOSFET as a Voltage-Controlled Switch |
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289 | (5) |
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The Threshold Voltage and the Body Effect |
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294 | (4) |
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MOSFET as a Voltage-Controlled Current Source: Mechanisms of Current Saturation |
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298 | (4) |
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Principal Current--Voltage Characteristics and Equations |
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302 | (10) |
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303 | (3) |
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306 | (2) |
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Spice Level 3 Model: Principal Effects |
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308 | (4) |
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312 | (8) |
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Mobility Reduction with Gate Voltage |
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312 | (1) |
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Velocity Saturation (Mobility Reduction with Drain Voltage) |
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313 | (1) |
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314 | (2) |
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Threshold-Voltage-Related Short-Channel Effects |
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316 | (2) |
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Threshold-Voltage-Related Narrow-Channel Effects |
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318 | (1) |
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318 | (2) |
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320 | (16) |
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Down-Scaling Benefits and Rules |
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321 | (2) |
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323 | (2) |
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325 | (3) |
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328 | (8) |
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336 | (11) |
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337 | (1) |
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338 | (2) |
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340 | (2) |
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342 | (3) |
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345 | (2) |
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347 | (48) |
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347 | (21) |
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BJT as a Voltage-Controlled Current Source |
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348 | (3) |
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BJT Currents and Gain Definitions |
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351 | (4) |
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Dependence of α and β Current Gains on Technological Parameters |
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355 | (5) |
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The Four Modes of Operation: BJT as a Switch |
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360 | (5) |
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365 | (1) |
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366 | (2) |
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Principal Current--Voltage Characteristics: Ebers--Moll Model in Spice |
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368 | (7) |
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368 | (1) |
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369 | (2) |
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371 | (4) |
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375 | (8) |
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Early Effect: Finite Dynamic Output Resistance |
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375 | (3) |
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378 | (1) |
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Dependence of Common-Emitter Current Gain on Transistor Current: Low-Current Effects |
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379 | (1) |
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Dependence of Common-Emitter Current Gain on Transistor Current: Gummel--Poon Model for High-Current Effects |
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380 | (3) |
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Heterojunction Bipolar Transistor |
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383 | (12) |
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386 | (2) |
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388 | (3) |
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391 | (4) |
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PART III DEVICE TECHNOLOGY AND ELECTRONICS |
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Integrated-Circuit Technologies |
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395 | (47) |
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395 | (10) |
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395 | (1) |
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396 | (2) |
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398 | (2) |
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400 | (5) |
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405 | (18) |
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Local Oxidation of Silicon (LOCOS) |
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405 | (1) |
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406 | (8) |
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414 | (8) |
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Silicon-on-Insulator (SOI) Technology |
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422 | (1) |
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423 | (19) |
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423 | (2) |
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Standard Bipolar Technology Process |
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425 | (4) |
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Implementation of PNP BJTs, Resistors, Capacitors, and Diodes |
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429 | (4) |
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433 | (3) |
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436 | (1) |
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437 | (1) |
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438 | (3) |
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441 | (1) |
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Device Electronics: Equivalent Circuits and Spice Parameters |
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442 | (57) |
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443 | (12) |
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Static Model and Parameters in Spice |
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443 | (1) |
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Large-Signal Equivalent Circuit in Spice |
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444 | (2) |
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446 | (6) |
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Small-Signal Equivalent Circuit |
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452 | (3) |
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455 | (23) |
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Static Model and Parameters: Level 3 in Spice |
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455 | (5) |
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460 | (8) |
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Large-Signal Equivalent Circuit and Dynamic Parameters in Spice |
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468 | (2) |
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470 | (6) |
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Small-Signal Equivalent Circuit |
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476 | (2) |
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478 | (21) |
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Static Model and Parameters: Ebers--Moll and Gummel--Poon Levels in Spice |
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478 | (2) |
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480 | (5) |
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Large-Signal Equivalent Circuit and Dynamic Parameters in Spice |
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485 | (2) |
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Small-Signal Equivalent Circuit |
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487 | (2) |
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Parasitic IC Elements Not Included in Device Models |
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489 | (3) |
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492 | (1) |
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493 | (2) |
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495 | (4) |
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499 | (21) |
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Light-Emitting Diodes (LED) |
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499 | (3) |
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Photodetectors and Solar Cells |
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502 | (10) |
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Biasing for Photodetector and Solar-Cell Applications |
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502 | (2) |
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Carrier Generation in Photodetectors and Solar Cells |
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504 | (2) |
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506 | (6) |
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512 | (8) |
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Stimulated Emission, Inversion Population, and Other Fundamental Concepts |
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512 | (2) |
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A Typical Heterojunction Laser |
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514 | (2) |
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516 | (1) |
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517 | (1) |
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518 | (2) |
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Microwave FETs and Diodes |
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520 | (34) |
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Gallium Arsenide Versus Silicon |
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522 | (3) |
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Dielectric--Semiconductor Interface: Enhancement Versus Depletion FETs |
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522 | (1) |
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523 | (1) |
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Electron Mobility and Saturation Velocity |
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524 | (1) |
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Negative Dynamic Resistance |
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525 | (1) |
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525 | (8) |
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525 | (1) |
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526 | (4) |
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SPICE Model and Parameters |
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530 | (3) |
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533 | (3) |
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533 | (1) |
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533 | (1) |
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Spice Model and Parameters |
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534 | (2) |
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536 | (4) |
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Two-Dimensional Electron Gas (2DEG) |
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537 | (2) |
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HEMT Structure and Characteristics |
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539 | (1) |
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Negative Resistance Diodes |
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540 | (14) |
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Amplification and Oscillation by Negative Dynamic Resistance |
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540 | (5) |
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545 | (3) |
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548 | (1) |
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549 | (2) |
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551 | (1) |
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551 | (1) |
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552 | (2) |
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554 | (17) |
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555 | (4) |
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Drift Region in Power Devices |
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555 | (2) |
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Switching Characteristics |
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557 | (2) |
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559 | (1) |
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559 | (3) |
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562 | (2) |
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564 | (7) |
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566 | (1) |
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567 | (1) |
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568 | (3) |
Bibliography |
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571 | (2) |
Answers to Selected Problems |
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573 | (6) |
Index |
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579 | |