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Principles of Semiconductor Processes and Device Technology [Kõva köide]

(Chongqing University, China), (Chongqing University, China)
  • Formaat: Hardback, 352 pages, kõrgus x laius: 244x170 mm
  • Ilmumisaeg: 10-Jun-2026
  • Kirjastus: Blackwell Verlag GmbH
  • ISBN-10: 3527354107
  • ISBN-13: 9783527354108
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Principles of Semiconductor Processes and Device TechnologySuurem pilt
  • Formaat: Hardback, 352 pages, kõrgus x laius: 244x170 mm
  • Ilmumisaeg: 10-Jun-2026
  • Kirjastus: Blackwell Verlag GmbH
  • ISBN-10: 3527354107
  • ISBN-13: 9783527354108
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Teised raamatud sellest sooduspakkumisest: Kevadine sooduspakkumine - kuni 31. maini üle miljoni raamatu kuni 25% soodsamalt
Püsilink: https://www.kriso.ee/db/9783527354108.html
From fundamental physics to frontier devices in semiconductor technology



Semiconductor devices underpin modern electronics, from power systems to optical sensors and light emitters. Principles of Semiconductor Processes and Device Technology delivers detailed coverage spanning fundamental physics through advanced fabrication techniques. Written by professors Zhigang Zang and Qingkai Qian of Chongqing University, this reference connects semiconductor physics with practical device development for researchers and engineers.

The book covers semiconductor physics, synthesis and characterization of optoelectronic materials, and fabrication processes. Focused chapters address transistors, luminescent materials and devices, superluminescent diodes, solar cells, photodetectors, and graphene devices. Technical details and frontier research results support professionals developing new semiconductor devices across academic and industrial settings.

Readers will also find:





Clear explanations of fabrication, characterization, and operation principles for various semiconductor device types from foundational concepts to advanced applications Specific technical details and research frontier results enabling practitioners to develop innovative luminescent devices, solar cells, and photodetectors Coverage of graphene-based devices and their related optical property investigations grounded in first-principle calculations and experimental validation Practical knowledge combining semiconductor process principles with device technology for both academic research and industrial product development Detailed treatment of optoelectronic materials synthesis and characterization methods essential for modern semiconductor device engineering and design

Designed for materials scientists, electronics engineers, semiconductor physicists, and graduate students in physics and materials sciences, this reference provides the depth required for device design and product development practitioners. Academic and industrial professionals will find it invaluable for understanding and advancing semiconductor technology.
Preface xi

1 Semiconductor Physics 1
1.1 Introduction 1
1.2 Properties of Semiconductors 2
1.3 Crystal Structure and Types of Semiconductors 6
1.4 Carrier Transport 14
1.5 Doping Process 21
1.6 Energy Band Theory 31
1.7 PN Junctions 36

2 Synthesis and Characterization of Optoelectronic Materials 47
2.1 Introduction 47
2.2 Synthesis of Semiconductors 48
2.3 Characterization 60

3 EUV Lithography Process of Semiconductor Devices 83
3.1 Introduction 83
3.2 EUV Lithography System and Working Principles 86
3.3 Development of Resist for EUV Lithography 88
3.4 Mask Materials and Designs for EUV Lithography 94
3.5 Conclusions and Perspectives 102

4 Transistors 107
4.1 Introduction 107
4.2 Bipolar Transistors 107
4.3 Field-Effect Transistors 119
4.4 Thin-Film Transistors 142

5 Luminescent Materials and Devices 151
5.1 Introduction 151
5.2 Principle of Semiconductor Luminescence 151
5.3 Structure and Feature of LEDs 164
5.4 Process of LEDs 171
5.5 GaN LEDs 180
5.6 Perovskite LEDs 186
5.7 White LEDs 190

6 Superluminescent Light-Emitting Diodes 195
6.1 Introduction 195
6.2 History of SLED 196
6.3 Principle of Active-MMI SLED 200
6.4 Merit and Results of Active-MMI SLED 202

7 Solar Cells 215
7.1 Introduction 215
7.2 Basic Principles of Solar Cells 217
7.3 Typical Solar Cells 225
7.4 Manufacturing of Solar Cells 236
7.5 Applications of Solar Cells 242
7.6 Conclusion 245

8 Photodetectors 249
8.1 Introduction 249
8.2 Principle of Photodetectors 251
8.3 General Metrics of Photodetectors 265
8.4 Perovskite Photodetectors 269
8.5 MetalSemiconductorMetal Photodetectors 280
8.6 Organic Photomultiplication Detectors 283

9 Graphene and Graphene-Based Devices 287
9.1 Introduction 287
9.2 Structure and Properties of Graphene 287
9.3 Preparation Methods of Graphene 294
9.4 Graphene-Based Devices 300
9.5 Future of Graphene-Based Devices 324

References 325
Index 329
Zhigang Zang, PhD, is a Professor and doctoral supervisor at Chongqing University, winner of the National Youth Talent Project and Chongqing Outstanding Youth Fund. Previously a researcher at National Shizuoka University in Japan and Nanyang Technological University in Singapore, he was selected as a leading talent in Chongqing and distinguished professor of Bayu Scholars in 2019.

Qingkai Qian, PhD, is an Associate Professor at the College of Optoelectronic Engineering, Chongqing University. A former postdoctoral researcher at The Pennsylvania State University, his research focuses on optoelectronic devices based on perovskites and low-dimensional materials. He serves as a young editorial board member of Rare Metals and Vacuum.