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Quantum States And Scattering In Semiconductor Nanostructures [Pehme köide]

(Ecole Normale Superieure, France), (Ecole Normale Superieure, France), (Eth Zurich, Switzerland)
  • Formaat: Paperback / softback, 448 pages
  • Sari: Advanced Textbooks in Physics
  • Ilmumisaeg: 26-Sep-2017
  • Kirjastus: World Scientific Europe Ltd
  • ISBN-10: 1786343029
  • ISBN-13: 9781786343024
Teised raamatud teemal:
  • Formaat: Paperback / softback, 448 pages
  • Sari: Advanced Textbooks in Physics
  • Ilmumisaeg: 26-Sep-2017
  • Kirjastus: World Scientific Europe Ltd
  • ISBN-10: 1786343029
  • ISBN-13: 9781786343024
Teised raamatud teemal:
This book is an introduction to quantum states and of their scattering in semiconductor nanostructures. Written with exercises and detailed solutions, it is designed to enable readers to start modelling actual electron states and scattering in nanostructures. It first looks at practical aspects of quantum states and emphasises the variational and perturbation approaches. Following this there is analysis of quasi two-dimensional materials, including discussion of the eigenstates of nanostructures, scattering mechanisms and their numerical results.Focussing on practical applications, this book moves away from standard discourse on theory and provides students of physics, nanotechnology and materials science with the opportunity to fully understand the electronic properties of nanostructures.
Foreword v
About the Authors ix
Part I: Practical Quantum Mechanics 1(94)
1.1 Schrodinger Equation
3(24)
1.1.1 Eigenvalues, eigenvector of linear operators
6(1)
1.1.2 Adjoint operator
7(1)
1.1.3 Hermitian operators: observables
8(1)
1.1.4 Unitary operators
8(1)
1.1.5 Projectors
9(1)
1.1.6 Commuting operators
9(4)
1.1.7 Two important examples of non-commuting operators
13(1)
1.1.8 Heisenberg inequalities
14(1)
1.1.9 Spin
15(1)
1.1.10 Spin-orbit coupling
16(1)
1.1.11 Density of states
17(3)
1.1.12 Identical particles and Pauli principle
20(4)
1.1.13 Tensorial products
24(3)
1.2 Bound and Extended States
27(30)
1.2.1 Propagating and evanescent states
27(3)
1.2.2 Probability current
30(1)
1.2.3 Boundary conditions
31(8)
1.2.4 Bound states
39(9)
1.2.5 The problem of plane waves
48(4)
1.2.6 Schrodinger equation, time-dependent aspects
52(5)
1.3 Approximate Methods
57(26)
1.3.1 Variational method
57(3)
1.3.2 Perturbation theory
60(10)
1.3.2.1 Non-degenerate perturbation theory
62(5)
1.3.2.2 Degenerate perturbation theory
67(3)
1.3.3 Time-dependent perturbation theory
70(13)
1.3.3.1 Static scatterers
71(6)
1.3.3.2 Time-dependent scattering
77(6)
1.4 Landau Quantisation of Electron Motion in Ideal Semiconductor Bulks and Heterostructures
83(12)
1.4.1 Landau level degeneracy
88(1)
1.4.2 Perturbative estimates of deltaH1 and deltaH2
89(2)
1.4.3 Magnetic field-dependent density of states
91(2)
1.4.4 A tractable case of lifting of the ky degeneracy: the crossed E,B fields
93(2)
Part II: The Physics of Heterostructures 95(160)
11.1 Background on Heterostructures
97(6)
11.2 Electrons States in Nanostructures
103(36)
11.2.1 The envelope function approximation
103(17)
11.2.1.1 Introduction
103(5)
11.2.1.2 Electronic states in bulk semiconductors
108(7)
11.2.1.3 Heterostructure states
115(5)
11.2.2 Multiple quantum wells: transfer matrix method
120(6)
11.2.2.1 Multiple quantum wells and superlattices
120(2)
11.2.2.2 Transfer matrix method
122(4)
11.2.3 Double quantum wells
126(9)
11.2.3.1 Tight binding analysis
131(3)
11.2.3.2 Symmetrical double quantum well
134(1)
11.2.4 Holes
135(4)
11.3 Beyond the Ideal World
139(26)
11.3.1 Population, velocity, energy relaxation times through rate equations
147(4)
11.3.2 Rate equations with elastic and inelastic processes
151(3)
11.3.3 Analysis of the relaxation times in rate equations
154(8)
11.3.3.1 Impurity form factor
155(3)
11.3.3.2 Phonon form factors and transition rates
158(4)
11.3.4 Consequence of the Born approximation on the additivity of scattering frequencies
162(3)
11.4 Screening at the Semi-classical Approximation
165(12)
11.4.1 Case of a single subband occupation
166(5)
11.4.2 Case of many subbands occupation
171(2)
11.4.3 Screening of inter-subband matrix elements
173(4)
11.5 Results for Static Scatterers
177(46)
11.5.1 Scattering by static disorder
177(7)
11.5.2 Scattering of composite particles/excitons at the Born approximation
184(9)
11.5.3 Scattering on magnetic impurities
193(12)
11.5.3.1 The "spin"-flip scattering of electrons
193(8)
11.5.3.2 The "spin"-flip scattering of holes
201(4)
11.5.4 Three-body collisions
205(18)
11.5.4.1 FCA in imperfect bulks and heterostructures
206(12)
11.5.4.2 Phonon scattering in the presence of static scatterers
218(5)
11.6 Results for Electron-Phonon Interaction
223(12)
11.6.1 Optical phonon scattering
224(5)
11.6.2 Acoustical phonon scattering
229(2)
11.6.3 Energy loss rate
231(4)
11.7 Beyond the Born Approximation
235(20)
11.7.1 Scattering between Landau levels
238(17)
Part III: Exercises 255(168)
1 Average position and velocity
257(1)
2 Average velocity in a bound state
257(1)
3 Density of states
258(2)
4 Density of states of a camel back shaped dispersion relation
260(3)
5 Heisenberg inequality in a quantum well with infinitely high barriers
263(3)
6 Manipulating Slater determinants
266(1)
7 Pauli principle for two weakly interacting electrons in 1D
267(3)
8 Calculation with Pauli matrices
270(1)
9 Moss-Burstein shift of interband absorption
271(2)
10 Virial theorem
273(3)
11 Absence of degeneracy for the 1D bound states
276(2)
12 Variational method: hydrogen atom
278(1)
13 Variational method: electron in a triangular potential
279(1)
14 Variational method: anharmonic oscillator
280(1)
15 Screened coulombic bound states
281(6)
16 A two-dimensional coulombic problem
287(3)
17 Inter-subband transitions in cubic GaN/AlN quantum wells: information on the conduction band offset
290(4)
18 Asymmetrical square quantum well
294(2)
19 Spherical quantum dots
296(2)
20 Delta quantum well
298(4)
21 Wavefunction amplitude at the interfaces
302(2)
22 Interface state in HgTe/CdTe heterojunctions
304(2)
23 Step quantum well
306(7)
24 Application of the Bohr-Sommerfeld quantisation rule to 1D confining potential: digital alloying
313(6)
25 Transmission/reflection in a delta quantum well
319(4)
26 Static perturbation of a harmonic oscillator
323(1)
27 Static perturbation (degenerate case)
324(1)
28 Degenerate perturbation calculus applied to quantum dots with cylindrical symmetry
325(2)
29 Quantum well and a delta potential: perturbative estimate
327(5)
30 Quantum dot anisotropy
332(7)
31 Defect in a superlattice: tight binding approach
339(6)
32 Bound states created by two delta scatterers in a Landau level
345(6)
33 Time-dependent evolution in an infinitely deep quantum well
351(1)
34 Time-dependent problem: evolution
352(4)
35 A touch of interaction representation
356(1)
36 Time evolution if A and H commute
357(1)
37 Oscillator: time evolution of averages
358(1)
38 Time evolution of a system where one level is coupled to N degenerate levels
359(4)
39 Time-dependent Hamiltonian: an exactly solvable model
363(2)
40 Time evolution of superlattice states
365(5)
41 Wavepackets
370(2)
42 Average velocity of a wavepacket
372(1)
43 Time-dependent perturbation in a 2-level system
373(2)
44 Universal absorption probability for interband transitions in graphene
375(8)
45 Scattering by N random impurity dimmers
383(5)
46 A tractable example of selective doping by delta scatterers
388(3)
47 Comparison between Born and self-consistent Born approximations
391(5)
48 Influence of a fast emptying of the final subband on the equilibrium between two subbands
396(2)
49 Phonon-mediated equilibration of the electronic temperature to the lattice temperature
398(4)
50 Inter-subband scattering by unscreened coulombic impurities
402(5)
51 Evaluation of a double sum appearing in the free carrier absorption
407(3)
52 Energy loss rate for the in-plane polarisation T = 0 K
410(3)
53 Inter-subband absorption versus carrier concentration in an ideal heterostructure
413(3)
54 Electron-LO phonon interaction: dimensionality dependence
416(7)
Bibliography 423(6)
Index 429