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RF and mm-Wave Power Generation in Silicon [Kõva köide]

Edited by (Assistant Professor of Electrical Engineering, Princeton University, Princeton, NJ, USA), Edited by (Assistant Professor, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA)
  • Formaat: Hardback, 576 pages, kõrgus x laius: 235x191 mm, kaal: 1340 g
  • Ilmumisaeg: 04-Dec-2015
  • Kirjastus: Academic Press Inc
  • ISBN-10: 0124080529
  • ISBN-13: 9780124080522
Teised raamatud teemal:
RF and mm-Wave Power Generation in SiliconSuurem pilt
  • Formaat: Hardback, 576 pages, kõrgus x laius: 235x191 mm, kaal: 1340 g
  • Ilmumisaeg: 04-Dec-2015
  • Kirjastus: Academic Press Inc
  • ISBN-10: 0124080529
  • ISBN-13: 9780124080522
Teised raamatud teemal:
Püsilink: https://www.kriso.ee/db/9780124080522.html
Märksõnad:

Silicon-based integrated technology, e.g. complementary metal–oxide–semiconductor (CMOS) or SiGe BiCMOS process, offers a powerful platform for realizing a full radio system on a single chip with its unparalleled integration level and extensive digital processing capability, achieving greater efficiencies and high-energy savings. However, the power amplifier (PA), which greatly affects the entire transmitter’s power efficiency and output signal quality, is the major block for full transceiver implementation in a silicon-based process.

This book presents the challenges and solutions of designing power amplifiers at RF and mm-Wave frequencies in a silicon-based process for both high energy and area-efficiency, covering practical power amplifier design methodologies, and includes power amplifier design examples in the RF frequency range and power generation towards the mm-Wave and sub-TeraherHZ frequencies.

  • Brings together in one reference the latest advances in CMOS power amplifier design to achieve the development of a full radio system on a chip, the hottest research area in RF engineering at the moment
  • Contributions from the top people in the field both from academia and industry, making it the first starting point for researchers and practitioners in industry
  • Gives design basics and design examples in CMOS power amplifier design together with mm-Wave/Sub-THz range technical solutions, including applications in wireless HD signal transmission, wireless USB, medical imaging, and biomedical spectroscopy

Muu info

Gain insight into the fundamentals of RF and mm-Wave silicon-based power amplifiers and transmitters, and learn novel design techniques for implementation in state-of-the-art IC processes
List of Contributors xv
Biography xix
Acknowledgment xxi
Chapter 1 Introduction
1(16)
Hua Wang
Kaushik Sengupta
1.1 What Are the Key PA Performance Metrics?
2(4)
1.1.1 PA Output Power
3(1)
1.1.2 PA Power Efficiency
3(1)
1.1.3 PA Linearity
4(1)
1.1.4 PA Robustness to Antenna Load Variations
5(1)
1.2 Unique Advantages of Silicon-Based PAs
6(2)
1.3 Silicon-Based mm-Wave and THz Signal Generation—A New Frontier
8(3)
References
11(6)
Part I Power Amplifier Design Methodologies
Chapter 2 Power amplifier fundamentals
17(44)
Bumman Kim
2.1 Power Generation and Power Matching
18(5)
2.1.1 I-V Curve and Power Generation Capability
18(2)
2.1.2 Power Gain and Efficiency
20(1)
2.1.3 Cripp's Method
21(2)
2.2 Classical Linear Power Amplifiers: Classes A, AB, B, and C
23(5)
2.2.1 Class-A Power Amplifier
25(1)
2.2.2 Class-B Power Amplifier
25(1)
2.2.3 Class-AB Power Amplifier
26(1)
2.2.4 Class C Power Amplifier
27(1)
2.3 Linear Power Amplifier
28(13)
2.3.1 Analysis of Device Linearity Characteristics
28(7)
2.3.2 Evaluation of Power Amplifier Linearity
35(3)
2.3.3 Realization of the Optimized Linear CMOS PA
38(3)
2.4 Switching Power Amplifier
41(7)
2.4.1 Class F and Class F-1 Amplifier
41(2)
2.4.2 Class D and Class D-1 Amplifiers
43(2)
2.4.3 Class AB/F Amplifier
45(3)
2.5 Class E Amplifier
48(10)
2.5.1 Ideal Design Formula of Class E Amplifier
49(3)
2.5.2 Real Operation of Class-E Amplifier
52(3)
2.5.3 Operation of the Class E PA Beyond Maximum Operation Frequency
55(3)
Reference
58(1)
Further Reading
58(3)
Part II RF Power Amplifier Design Examples
Chapter 3 CMOS power amplifier design for wireless connectivity applications: a highly linear WLAN power amplifier in advanced SoC CMOS
61(28)
Yulin Tan
Hongtao Xu
3.1 Introduction
61(3)
3.2 Design Considerations of Class-AB PA for WLAN
64(2)
3.3 Circuit Architecture and Layout Structure
66(2)
3.4 Shielded Concentric Transformers
68(2)
3.5 Circuit Implementations
70(3)
3.6 Measured Results of Experimental Design in Low-Resistivity Wafer
73(3)
3.7 Improved Design and Measurement Results in Regular Wafer
76(2)
3.8 PA Integration for SoC
78(4)
3.9 Performance Summaries and Comparison of State of the Art
82(4)
3.10 Conclusions
86(1)
Acknowledgments
86(1)
References
87(2)
Chapter 4 CMOS power amplifier design for cellular applications: an EDGE/GSM dual-mode quad-band PA in 0.18µm CMOS
89(22)
Woonyun Kim
4.1 Introduction
89(3)
4.2 Standards for Cellular RF Systems
92(4)
4.3 Adaptive Biasing
96(3)
4.4 Linearization for Nonlinear Cgd
99(4)
4.5 Dual-Mode PA
103(1)
4.6 Measurements of PA
103(5)
4.7 Conclusion
108(1)
References
109(2)
Chapter 5 Energy-efficiency enhancement and linear amplifications: a transformer-based Doherty approach
111(24)
Patrick Reynaert
Ercan Kaymaksut
5.1 Introduction
111(3)
5.2 Optimization of SCT Transformer-Based Doherty Power Amplifiers
114(9)
5.2.1 Optimization of 1:1 Transformers
114(2)
5.2.2 Optimization of Series-Combining Transformers SCT) for Doherty Operation
116(7)
5.3 Implementation of SCT Transformer-Based Doherty Power Amplifier for WLAN Applications
123(3)
5.4 Measurement Results
126(5)
5.5 Conclusion
131(1)
References
131(4)
Chapter 6 Linear power amplification with high back-off efficiency: an out-phasing approach
135(48)
Hongtao Xu
Ashoke Ravi
Wei Tai
Palaskas Yorgos
6.1 Introduction
136(1)
6.2 System Impact from Impairments of Outphasing Design
137(6)
6.3 Outphasing Topologies
143(6)
6.3.1 Topology Selection of Active Devices
143(3)
6.3.2 Power Combiner for Outphasing
146(3)
6.4 Linearity Analysis of Outphasing System Using Class-D and Class-F PA
149(5)
6.5 Back-Off Efficiency Enhancement in Outphasing
154(9)
6.5.1 Transformer Connection Arrangement Optimization
154(2)
6.5.2 Dynamic Power Control with a Multisection Transformer Combiner
156(7)
6.6 Implementation Examples and Considerations
163(16)
6.6.1 Design Example I: 45-nm Outphasing PA with Lumped Based on λ/4 Power Combiner
164(4)
6.6.2 Design Example II: 32-nm Outphasing PA with 2:1 Transformer Combiner
168(3)
6.6.3 Design Example III: 45-nm Outphasing PA with Dynamic Power Control
171(7)
6.6.4 Design Example V: Consideration of PA Integration in Transmitter
178(1)
6.7 Conclusion
179(1)
References
179(4)
Chapter 7 Energy efficiency enhancement and linear amplifications: an envelope-tracking (ET) approach
183(28)
Donald Y.C. Lie
7.1 Introduction
183(5)
7.2 Pseudo-Differential SiGe PA Design
188(2)
7.3 Envelope-Shaping Analysis for the ET-PA System
190(8)
7.3.1 Discrete EM for ET-PA System Analysis
190(1)
7.3.2 Envelope-Shaping Method Investigation: DC Shifting with Envelope Scaling
191(4)
7.3.3 Additional Envelope-Shaping Method Investigation: Envelope Clipping
195(3)
7.4 Integrated CMOS EM IC Design
198(3)
7.5 ET-PA Measurement Results with the EM IC
201(6)
7.6 Conclusion
207(1)
Acknowledgments
207(1)
References
208(3)
Chapter 8 A digital RF power amplification technique based on the switched-capacitor circuit
211(36)
Sang-Min Yoo
Jeffrey S. Walling
David J. Allstot
8.1 Introduction
212(1)
8.2 Polar and Digital Power Amplifiers
213(2)
8.2.1 Polar Architecture
213(1)
8.2.2 Digital PA
214(1)
8.3 Theory of Operation
215(10)
8.3.1 Ideal Operation of the SCPA
215(2)
8.3.2 Output Power and Efficiency of the SCPA
217(4)
8.3.3 AM—PM and AM—AM Distortion
221(4)
8.4 SCPA Prototype Implementation and Experimental Results
225(6)
8.4.1 Prototype Implementation
225(2)
8.4.2 Experimental Results
227(4)
8.5 Extended SCPA Architectures
231(12)
8.5.1 Class-G SCPA for Improved Efficiency
231(10)
8.5.2 Power-Combined SCPA for Higher Output Power
241(2)
8.6 Conclusions
243(2)
References
245(2)
Chapter 9 A transformer-based reconfigurable digital polar Doherty power amplifier fully integrated in bulk CMOS
247(30)
Song Hu
Shouhei Kousai
Jong Seok Park
Outmane Lemtiri Chlieh
Hua Wang
9.1 Introduction
247(2)
9.2 Digital Polar Doherty PA Architecture
249(4)
9.2.1 Doherty Operating Principle Review
249(2)
9.2.2 Digital Polar Doherty Architecture
251(1)
9.2.3 PA Core and Driver Design
252(1)
9.3 Passive Network Designs in the Fully Integrated Doherty PA
253(9)
9.3.1 Doherty Input Passive Network Design
253(1)
9.3.2 Doherty Output Passive Network Design
253(9)
9.4 Experimental Results
262(9)
9.4.1 Continuous Wave Measurement
263(2)
9.4.2 Modulated Signal Measurement
265(6)
9.5 Conclusions
271(1)
References
271(6)
Part III mm-Wave And Terahertz Power Generation Design Examples
Chapter 10 60 GHz all silicon radio IC: how it all started
277(36)
Debasis Dawn
10.1 Introduction
278(5)
10.2 Power Amplifier Design
283(15)
10.2.1 Design Techniques, Characterization and Measurement Procedures
283(3)
10.2.2 Three-Stage Power Amplifier
286(5)
10.2.3 Four-Stage Power Amplifier
291(5)
10.2.4 Modified Four-Stage Power Amplifier
296(2)
10.3 Power Amplifier Integration into a Single-Chip Radio Transceiver
298(11)
10.3.1 Transmitter Architecture
298(1)
10.3.2 Cross-coupled VCO
299(1)
10.3.3 Dual-Gate Up-Conversion Mixer
300(1)
10.3.4 Power Amplifier Integrated with Up-Converter and Temperature Sensor
301(2)
10.3.5 Integrated Transmitter Front-End into a Single-Chip Radio Transceiver
303(6)
Acknowledgments
309(1)
References
309(4)
Chapter 11 mm-Wave power-combining architectures: current combining
313(22)
Zhiwei Xu
Qun Jane Gu
Jenny Yi-Chun Liu
Mau-Chung Frank Chang
11.1 Introduction
313(2)
11.2 Two-Way Current-Combining PA
315(12)
11.2.1 mm-Wave CMOS PA Challenges
315(1)
11.2.2 Power Combiner Comparisons
316(1)
11.2.3 Two-Way Transformer-Based Current Combiner
317(6)
11.2.4 PA Design
323(4)
11.3 Measurement Results
327(3)
11.4 Conclusion
330(1)
Acknowledgments
331(1)
References
331(4)
Chapter 12 mm-Wave power-combining architectures: hybrid combining
335(26)
Jie-Wei Lai
Alberto Valdes-Garcia
12.1 Why Millimeter Wave, and Why Silicon
335(1)
12.2 Power-Combining Techniques
336(5)
12.2.1 Spatial Power Combination
337(2)
12.2.2 Monolithic On-Chip Power Combination
339(2)
12.3 Design of CMOS Transformer-Based Power-Combining PA
341(13)
12.3.1 Issues of Transformer-Based Power Combiner
342(3)
12.3.2 The Effect of Transformer Design on Power Combiner
345(2)
12.3.3 Proposed Architectures for Fully Coherent Power Combiner
347(4)
12.3.4 Design of the Fully Synchronous Transformer-Based Power Combining Amplifier
351(3)
12.4 Experimental Results
354(2)
12.5 Summary
356(1)
Acknowledgment
357(1)
References
357(4)
Chapter 13 mm-Wave CMOS design above 60 GHz
361(20)
Patrick Reynaert
Noel Deferm
13.1 Introduction
361(1)
13.2 NMOS Device performance at mm-Wave Frequencies
362(6)
13.2.1 Power Gain at mm-Wave Frequencies
363(1)
13.2.2 Device Stabilization
364(4)
13.3 Impedance Matching
368(5)
13.3.1 Conjugate Matching
368(1)
13.3.2 Disadvantages of Conjugate Matching
368(2)
13.3.3 Differential Matching Circuits
370(3)
13.4 mm-Wave Integrated Circuits
373(7)
13.4.1 100-GHz Differential Amplifier in 90-nm CMOS
374(1)
13.4.2 94-GHz Differential PA in 45-nm LP CMOS
374(3)
13.4.3 120-GHz 10-Gb/s CMOS Transmitter
377(3)
References
380(1)
Chapter 14 Self-healing techniques for robust mm-Wave power amplification
381(28)
Jenny Yi-Chun Liu
Zhiwei Xu
Qun Jane Gu
Mau-Chung Frank Chang
14.1 Introduction
381(3)
14.2 Power Amplification with Reconfigurability
384(1)
14.3 mm-Wave Power Amplification with Self-healing Capability
385(14)
14.3.1 mm-Wave CMOS Power Amplification Design Challenges and Brief Review
385(1)
14.3.2 Proposed mm-Wave CMOS Power Amplifier and Control Knobs Design
386(8)
14.3.3 Self-Healing Techniques and Algorithm
394(5)
14.4 Measurement Results
399(7)
14.5 Conclusion
406(1)
Acknowledgment
406(1)
References
406(3)
Chapter 15 mm-Wave class-E PA design in CMOS
409(26)
Olumuyiwa T. Ogunnika
Alberto Valdes-Garcia
15.1 Introduction
409(2)
15.2 Design Background: Theory of Operation and Starting Design Equations
411(2)
15.3 Circuit Implementation in 32-nm SOI CMOS
413(10)
15.3.1 Core PA Device Size Determination
414(1)
15.3.2 Input Matching Network Design
415(2)
15.3.3 Drain Load Design
417(1)
15.3.4 Output Network Design
418(2)
15.3.5 FET Layout Methodology
420(1)
15.3.6 Simulation Results
421(2)
15.4 Measurement and Results
423(8)
15.4.1 Measurement Setup
423(3)
15.4.2 Measurement Results
426(4)
15.4.3 Discussion
430(1)
Acknowledgment
431(1)
References
431(4)
Chapter 16 High-speed, efficient, millimeter-wave power-mixer-based digital transmitters
435(26)
Kaushik Dasgupta
16.1 Introduction
435(2)
16.2 System Architecture
437(2)
16.3 Design and Implementation
439(7)
16.3.1 Segmented Power Stage
439(2)
16.3.2 Dual-Primary DAT
441(2)
16.3.3 Input Distribution and Drivers
443(3)
16.4 Chip Implementation and Measurement Results
446(12)
16.4.1 Continuous Wave Measurements
448(2)
16.4.2 Modulation Measurements
450(4)
16.4.3 EVM Contribution Due to Measurement Setup and Calibration
454(3)
16.4.4 Segment Reliability Under Stress
457(1)
16.5 Conclusions
458(2)
References
460(1)
Chapter 17 THz power generation beyond transistor fmax
461(24)
Dongha Shim
Eunyoung Seok
Daniel J. Arenas
Dimitrios Koukis
David B. Tanner
Kenneth K. O
17.1 Multiple-Push Oscillators
463(2)
17.2 Sub-terahertz CMOS Push-Push Oscillator
465(10)
17.2.1 Design Considerations
465(5)
17.2.2 Quasi-optical Measurement
470(3)
17.2.3 Experimental Results
473(2)
17.3 Quadruple-Push Oscillator in CMOS
475(7)
17.3.1 Design Considerations
476(4)
17.3.2 Measurement Results
480(2)
17.4 Summary
482(1)
References
483(2)
Chapter 18 THz signal generation, radiation, and beam-forming in silicon: a circuit and electromagnetics co-design approach
485(34)
Kaushik Sengupta
Ali Hajimiri
18.1 Motivations for THz
486(1)
18.2 Current THz Technology
487(1)
18.3 Power Generation Above fmax
488(2)
18.4 Inverse Design Approach: Design Evolution of Distributed Active Radiator (DAR)
490(4)
18.4.1 Conceptual Synthesis of Fundamental and Harmonic Surface Currents in Silicon
490(1)
18.4.2 Active Synthesis of Currents for the Desired Harmonic Radiation
491(2)
18.4.3 Distributed Active Radiation: Complete Chain of DC-Radiated THz Conversion
493(1)
18.5 Design and optimization of DAR
494(7)
18.5.1 Fundamental Frequency of Oscillation
494(2)
18.5.2 Ground Plane Aperture and Optimum Impedance Matching
496(1)
18.5.3 Radiation Properties, Bandwidth, and Comparison with Classical Antennas
497(3)
18.5.4 Bias Network Design
500(1)
18.6 Distributed Active Radiator Beam-Scanning Architecture at 0.28 THz
501(2)
18.7 Transmitter circuit blocks
503(3)
18.7.1 94-GHz Voltage-Controlled Oscillator and Buffers
503(1)
18.7.2 47-GHz Injection Locked Divide-by-Two
504(1)
18.7.3 47-GHz Phase Rotator
504(2)
18.7.4 141-GHz Injection-Locked Frequency Tripler
506(1)
18.8 Measurement results
506(8)
18.8.1 Central VCO and the Buffers
508(1)
18.8.2 Quadrature Signal Generation and Phase Rotation
508(2)
18.8.3 Array Measurement
510(4)
18.9 Conclusions
514(1)
References
515(4)
Chapter 19 Silicon-based THz signal generation with multiphase subharmonic injection-locking oscillators
519(28)
Taiyun Chi
Hua Wang
19.1 Introduction
519(3)
19.2 Multiphase IL technique
522(6)
19.2.1 N-Push (Multiphase) LC Ring Oscillator
522(2)
19.2.2 Multiphase IL Scheme versus Single-Phase IL Scheme
524(4)
19.3 A Scalable and Cascadable Active Frequency Multiplier Architecture for THz Signal Generation
528(2)
19.4 Design of Silicon-Based 500-GHz Signal Generation System
530(9)
19.4.1 The Three-Phase 168-GHz Oscillator (Innermost Ring ILO)
530(4)
19.4.2 The Three-Phase 84-GHz Oscillator (Middle Ring ILO)
534(3)
19.4.3 The Three-Phase 42-GHz Oscillator (Outermost Ring VCO)
537(2)
19.5 Measurement Results
539(5)
19.6 Conclusion
544(1)
References
544(3)
Index 547
Hua Wang Hua Wang (M05SM15) received his B.S. degree from Tsinghua University, Beijing, China, in 2003, and M.S. and Ph.D. degrees in electrical engineering from the California Institute of Technology, Pasadena, in 2007 and 2009, respectively.

He was with Guidant Corporation during the summer of 2004, working on accelerometer-based posture monitoring systems for implantable biomedical devices. In 2010, he joined Intel Corporation, where he worked on the next generation energy-efficient mm-wave communication link and broadband CMOS Front-End-Module for Wi-Fi systems. In 2011, he joined Skyworks Solutions. His work at Skyworks included the development of SAW-less integrated filter solutions for low-cost cellular-standard Front-End-Module. In 2012, he joined the School of Electrical and Computer Engineering at Georgia Institute of Technology as an assistant professor. He currently holds the Demetrius T. Paris Junior Professorship of the School of Electrical and Computer Engineering. He is generally interested in innovating mixed-signal, RF, and mm-Wave integrated circuits and systems for communication, radar, and bioelectronics applications.

Dr. Wang received National Science Foundation (NSF) CAREER Award in 2015, Roger P. Webb ECE Outstanding Junior Faculty Member Award in 2015, and Lockheed Martin Deans Excellence in Teaching Award in 2015. He was the award recipient of the 46th IEEE DAC/ISSCC Student Design Contest Winner in 2009 based on his work of An Ultrasensitive CMOS Magnetic Biosensor Array for Point-Of-Care (POC) Microarray Application.” He was also a co-recipient of the IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Best Student Paper Award (1st Place) as the students Ph.D. advisor in 2014.

Dr. Wang is an Associate Editor of the IEEE Microwave and Wireless Components Letters (MWCL). He is currently a Technical Program Committee (TPC) Member for IEEE Radio Frequency Integrated Circuits Symposium (RFIC), IEEE Custom Integrated Circuits Conference (CICC), IEEE Biopolar/BiCMOS Circuits and Technology Meeting (BCTM), and IEEE/CAS-EMB Biomedical Circuits and Systems Conference (BioCAS). He serves as the Chair of the Atlantas IEEE CAS/SSCS joint chapter, which won the IEEE SSCS Outstanding Chapter Award in 2014.

Kaushik Sengupta Kaushik Sengupta (M12) received the B.Tech. and M.Tech. degrees in electronics and electrical communication engineering from the Indian Institute of Technology (IIT), Kharagpur, India, both in 2007, and the M.S. and Ph.D. degrees in electrical engineering from the California Institute of Technology, Pasadena, CA, USA, in 2008 and 2012, respectively. In February 2013, he joined the faculty of the Department of Electrical Engineering, Princeton University, Princeton, NJ, USA. During his undergraduate studies, in the summers of 2005 and 2006, he performed research at the University of Southern California and the Massachusetts Institute of Technology (MIT), where he was involved with nonlinear integrated systems for high-purity signal generation and low-power RF identification (RFID) tags, respectively. His research interests are in the areas of high-frequency integrated circuits (ICs), electromagnetics, optics for various applications in sensing, imaging, and high-speed communication.

Dr. Sengupta was the recipient of the IBM Ph.D. fellowship (20112012), the IEEE Solid-State Circuits Society Predoctoral Achievement Award (2012), the IEEE Microwave Theory and Techniques Graduate Fellowship (2012), and the Analog Devices Outstanding Student Designer Award (2011). He was the recipient of the Charles Wilts Prize in 2013 from Electrical Engineering, Caltech for outstanding independent research in electrical engineering leading to a PhD. He was also the recipient of the Prime Minister Gold Medal Award of IIT (2007), the Caltech Institute Fellowship, the Most Innovative Student Project Award of the Indian National Academy of Engineering (2007), and the IEEE Microwave Theory and Techniques Undergraduate Fellowship (2006). He serves on the Technical Program Committee of the European Solid-State Circuits Conference (ESSCIRC). He was selected in Princeton Engineering Commendation List for Outstanding Teaching” in 2014. He was the co-recipient of the IEEE RFIC Symposium Best Student Paper Award in 2012 and 2015 IEEE Microwave Theory and Techniques Society (IEEE MTT-S) Microwave Prize.