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Scaling And Integration Of High-speed Electronics And Optomechanical Systems [Kõva köide]

Edited by (Linkoping Univ, Sweden), Edited by (Halmstad Univ, Sweden)
Teised raamatud teemal:
Teised raamatud teemal:
Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.
Preface v
Scaling Challenges for Advanced CMOS Devices
1(76)
Ajey P. Jacob
Ruilong Xie
Min Gyu Sung
Lars Liebmann
Rinus T. P. Lee
Bill Taylor
High-Speed SiGe BiCMOS Technologies and Circuits
77(22)
A. Mai
I. Garcia Lopez
P. Rito
R. Nagulapalli
A. Awny
M. Elkhouly
M. Eissa
M. Ko
A. Malignaggi
M. Kucharski
H. J. Ng
K. Schmalz
D. Kissinger
Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs
99(10)
Henry H. Radamson
Jun Luo
Changliang Qin
Huaxiang Yin
Huilong Zhu
Chao Zhao
Guilei Wang
Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks
109(10)
Maxim Ryzhii
Taiichi Otsuji
Victor Ryzhii
Vladimir Mitin
Michael S. Shur
Georgy Fedorov
Vladimir Leiman
Integrated On-Chip Nano-Optomechanical Systems
119(22)
Zhu Diao
Vincent T. K. Sauer
Wayne K. Hiebert
Author Index 141