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Silicon and Silicide Nanowires: Applications, Fabrication, and Properties [Kõva köide]

Edited by (University of California at Los Angeles, USA), Edited by (University of California at Los Angeles, USA)
  • Formaat: Hardback, 484 pages, kõrgus x laius: 229x152 mm, kaal: 802 g, 8 Illustrations, color; 179 Illustrations, black and white
  • Ilmumisaeg: 24-Oct-2013
  • Kirjastus: Pan Stanford Publishing Pte Ltd
  • ISBN-10: 9814303461
  • ISBN-13: 9789814303460
Teised raamatud teemal:
Silicon and Silicide Nanowires: Applications, Fabrication, and PropertiesSuurem pilt
  • Formaat: Hardback, 484 pages, kõrgus x laius: 229x152 mm, kaal: 802 g, 8 Illustrations, color; 179 Illustrations, black and white
  • Ilmumisaeg: 24-Oct-2013
  • Kirjastus: Pan Stanford Publishing Pte Ltd
  • ISBN-10: 9814303461
  • ISBN-13: 9789814303460
Teised raamatud teemal:
Püsilink: https://www.kriso.ee/db/9789814303460.html

Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering and for the vast potential they possess in fields such as thermoelectricity and magnetism. The fundamental understanding of Si and silicide material processes at nanoscale plays a key role in achieving device structures and performance that meet real-world requirements and, therefore, demands investigation and exploration of nanoscale device applications. This book comprises the theoretical and experimental analysis of various properties of silicon nanocrystals, research methods and techniques to prepare them, and some of their promising applications.

Preface xv
1 In situ Observations of Vapor-Liquid-Solid Growth of Silicon Nanowires 1(22)
S. Kodambaka
1.1 Introduction
1(3)
1.2 Experimental
4(2)
1.3 Silicon Nanowire Nucleation Kinetics
6(5)
1.4 Silicon Nanowire Growth Kinetics
11(3)
1.5 Summary and Outlook
14(9)
2 Growth of Germanium, Silicon, and Ge-Si Heterostructured Nanowires 23(36)
Shadi A. Dayeh
S. Thomas Picraux
2.1 Introduction
23(1)
2.2 The VLS Growth Mechanism
24(6)
2.3 Size Effects in Nanowire Growth
30(6)
2.4 Temperature Effects on Nanowire Growth
36(2)
2.5 Pressure Effects on Nanowire Growth
38(2)
2.6 Dopant Precursor Influence on Nanowire Growth
40(2)
2.7 Defects during VLS Growth of Semiconductor Nanowires
42(5)
2.8 Ge Core/Si Shell Heterostructured Nanowires
47(3)
2.9 Unique Opportunities for Bandgap Engineering in Semiconductor Nanowires
50(2)
2.10 Conclusions
52(7)
3 Transition Metal Silicide Nanowires: Synthetic Methods and Applications 59(62)
Jeremy M. Higgins
Andrew L. Schmitt
Song Jin
3.1 Introduction
59(7)
3.2 Formation of Bulk and Thin-Film Metal Silicides in Diffusion Couples
66(14)
3.2.1 Basic Description
67(1)
3.2.2 Diffusion, Thermodynamics, and Nucleation in Silicide Reactive Phase Formation
67(3)
3.2.2.1 Diffusion and the dominant diffusing species
67(2)
3.2.2.2 Thermodynamics of silicide reactions in binary diffusion couples
69(1)
3.2.2.3 Basics of nucleation
70(1)
3.2.3 Kinetics of Silicide Layer Growth
70(7)
3.2.3.1 Nucleation-controlled kinetics
71(1)
3.2.3.2 Diffusion-controlled kinetics
71(2)
3.2.3.3 Reaction rate-controlled kinetics
73(1)
3.2.3.4 Bulk versus thin-film diffusion couples
74(3)
3.2.4 Phase Formation
77(2)
3.2.4.1 Walser-Bene first phase rule
77(1)
3.2.4.2 Effective heat of formation approach
78(1)
3.2.5 Modern Developments
79(1)
3.3 Silicide Nanowire Growth Techniques
80(20)
3.3.1 Silicidation of Silicon Nanowires
81(3)
3.3.2 Delivery of Silicon to Metal Films
84(2)
3.3.3 Reactions of Transition Metal Sources with Silicon Substrates
86(2)
3.3.3.1 Metal vapor
86(1)
3.3.3.2 Metal halides
87(1)
3.3.4 Simultaneous Metal and Silicon Delivery
88(6)
3.3.4.1 Chemical vapor transport
88(2)
3.3.4.2 Chemical vapor deposition
90(4)
3.3.5 Vapor-Phase Technique Comparison
94(6)
3.4 Applications of Silicide Nanowires
100(5)
3.4.1 Nanoelectronics
100(2)
3.4.2 Nanoscale Field Emitters
102(1)
3.4.3 Spintronics
102(1)
3.4.4 Thermoelectrics
103(1)
3.4.5 Solar Energy Conversion
104(1)
3.5 Conclusion
105(16)
4 Metal Silicide Nanowires: Growth and Properties 121(66)
L.J. Chen
W.W. Wu
4.1 Introduction
121(1)
4.2 Epitaxial Growth of Silicide Nanowires on Si Substrate
122(11)
4.2.1 Epitaxial NiSi2 Nanowires
123(3)
4.2.2 Epitaxial α-FeSi2 Nanowires with Length Tunability
126(4)
4.2.3 Growth of High-Density Titanium Silicide Nanowires in a Single Direction on a Silicon Surface
130(3)
4.3 Growth of Free-Standing Silicide Nanowires and Their Properties
133(30)
4.3.1 Growth of Single-Crystal Nickel Silicide Nanowires with Excellent Electrical Transport and Field-Emission Properties
133(12)
4.3.1.1 Well-aligned epitaxial Ni31Si12 nanowire arrays
134(5)
4.3.1.2 Growth of free-standing single-crystal NiSi2 nanowires
139(6)
4.3.2 Cobalt Silicide Nanostructures: Synthesis, Electron Transport, and Field-Emission Properties
145(6)
4.3.3 Synthesis and Properties of the Low-Resistivity TiSi2 Nanowires Grown with Metal Fluoride Precursor
151(6)
4.3.4 Ti5Si4 Nanobats with Excellent Field-Emission Properties
157(6)
4.4 Formation of Silicide/Si/Silicide Nano-Heterostructures from Si Nanowires
163(15)
4.4.1 Controlled Growth of Atomic-Scale Si Layer with Huge Strain in the Nano-Heterostructure NiSi/Si/NiSi through Point-Contact Reaction between Nanowires of Si and Ni and Reactive Epitaxial Growth
163(7)
4.4.2 Repeating Events of Nucleation in Epitaxial Growth of Nano CoSi2 and NiSi in Nanowires of Si
170(3)
4.4.3 Reactions between Si Nanowires and Pt Pads
173(14)
4.4.3.1 Formation of PtSi nanowire and PtSi/Si/PtSi nanoheterostructures
173(2)
4.4.3.2 Epitaxial relationship of PtSi formation within a silicon nanowire
175(2)
4.4.3.3 PtSi/i-Si/PtSi nanowire heterostructures as high-performance p-channel enhancement mode transistors
177(1)
4.5 Conclusions
178(9)
5 Formation of Epitaxial Silicide in Silicon Nanowires 187(58)
Yi-Chia Chou
Kuo-Chang Lu
King-Ning Tu
5.1 Introduction
187(8)
5.1.1 Overview of Contacts in Microelectronics and Nanoelectronics
187(1)
5.1.2 Introduction to Contacts in Nanoscale Electronics
188(4)
5.1.2.1 Transition-metal silicides
188(1)
5.1.2.2 One-dimensional nanostructures
189(2)
5.1.2.3 Si-based nanocircuits in Si nanowires
191(1)
5.1.3 Introduction to Solid-State Phase Transformations
192(3)
5.2 Introduction to Solid-State Phase Transformation in Thin Film
195(11)
5.2.1 Thin Film Metal Silicide Formation
195(4)
5.2.1.1 Phase sequence
195(2)
5.2.1.2 Growth kinetics
197(2)
5.2.2 Examples of Silicides Formation on Si Wafers
199(2)
5.2.2.1 Ni silicides formation
199(1)
5.2.2.2 Co silicides formation
200(1)
5.2.3 Summary
201(5)
5.2.3.1 Metal-rich silicides
202(1)
5.2.3.2 Monosilicides
202(1)
5.2.3.3 Disilicides
202(4)
5.3 Nanoscale Silicide Formation by Point Contact Reaction between Ni/Co and Si Nanowires
206(17)
5.3.1 Introduction
206(1)
5.3.2 Experimental Methods
207(1)
5.3.3 Point Contact Reactions between Nanowires of Si and Co
208(6)
5.3.3.1 CoSi formation by the supply of Co nanodots into Si nanowires
208(2)
5.3.3.2 Epitaxial growth of CoSi2 in Si nanowires
210(4)
5.3.4 Point Contact Reactions between Nanowires of Si and Ni
214(6)
5.3.4.1 Formation of NiSi contacts within Si nanowires and NiSi/Si/NiSi nanowire heterostructures as building blocks for field-effect transistors
214(2)
5.3.4.2 Epitaxial relationship between NiSi and Si and atomically sharp interfaces
216(1)
5.3.4.3 Kinetic analysis of reactive epitaxial growth of nano-NiSi/Si/NiSi
217(3)
5.3.4.4 Fabrication of 2 nm to 200 nm highly strained Si in dimension controlled NiSi/Si/NiSi heterostructures
220(1)
5.3.5 Comparison of Co and Ni Silicides in Si Nanowires
220(2)
5.3.6 Summary
222(1)
5.4 Homogeneous Nucleation of Nanoscale Silicide Formation
223(12)
5.4.1 Introduction
223(1)
5.4.2 Results and Discussions
224(10)
5.4.2.1 Stepwise growth and repeating events of nucleation
224(2)
5.4.2.2 Supply limit reaction
226(1)
5.4.2.3 Homogeneous nucleation: experimental observations
227(3)
5.4.2.4 Homogeneous nucleation: correlation between experiments and theory
230(3)
5.4.2.5 Homogeneous nucleation: supersaturation
233(1)
5.4.3 Summary
234(1)
5.5 Conclusion
235(10)
6 Interaction between Inverse Kirkendall Effect and Kirkendall Effect in Nanoshells and Nanowires 245(80)
A.M. Gusak
T.V. Zaporozhets
6.1 Introduction
245(6)
6.2 Basic Notions
251(8)
6.2.1 Kirkendall Shift and Frenkel-Kirkendall Voiding in Bulk Samples
251(4)
6.2.2 Inverse Kirkendall Effect
255(1)
6.2.3 Gibbs Thomson Effect for Vacancies (Elementary)
256(2)
6.2.4 Gibbs-Thomson Effect for Basic Components
258(1)
6.3 Instability of Hollow Nanostructures
259(33)
6.3.1 Shrinking of Pure Hollow Shells
261(5)
6.3.1.1 Model
262(4)
6.3.2 Shrinking of Chemical Compound Hollow Shells
266(7)
6.3.2.1 Basic equations
267(1)
6.3.2.2 Main assumptions
268(5)
6.3.3 Instability of Binary (Solid Solution) Hollow Shells
273(9)
6.3.3.1 Boundary conditions
275(7)
6.3.4 Energy Barrier-Does it Really Suppress the Shrinking?
282(8)
6.3.2 Conclusions to Section 6.3
290(2)
6.4 Formation of Hollow Shells
292(15)
6.4.1 Formation of IMC Hollow Shells
292(10)
6.4.1.1 A simple case of the competition between "Kirkendall-driven" and "curvature-driven" effects
292(2)
6.4.1.2 General case
294(8)
6.4.2 Formation of Binary Solution Hollow Shells
302(2)
6.4.3 Formation of a Spherical Nano-Shell in Monte Carlo Simulation
304(1)
6.4.4 Conclusions to Section 6.4
305(2)
6.5 Cross-Over from Formation to Collapse
307(18)
6.5.1 Phenomenological Model
307(9)
6.5.2 Monte Carlo Simulation
316(1)
6.5.2.1 Shrinking and segregation kinetics in Monte Carlo simulation
316(1)
6.5.3 Conclusions to Section 6.5
317(8)
7 Electrical Transport Properties of Doped Silicon Nanowires 325(18)
Aya Seike
Iwao Ohdomari
7.1 Introduction
325(3)
7.2 Fabrication Processes and Electrical Measurements
328(3)
7.2.1 Device Fabrication
328(2)
7.2.2 Methods of Electrical Characterization
330(1)
7.3 Introduction of Strain into Nanowire Channels by Oxidation, and Evaluation of Stress within Individual Nanowires
331(5)
7.3.1 Stress Induced during Oxidation Using Pattern-Dependent Oxidation (PADOX) Theory
331(2)
7.3.2 Three-Dimensional Molecular Dynamics Simulations of Stress Distributions in Nanowires
333(1)
7.3.3 Evaluation of Induced Strain inside Si Nanowires by UV Raman Spectroscopy
334(2)
7.4 Electrical Characterization of Nanowire FETs
336(4)
7.4.1 Effects of Stress on Carrier Transport in Nanowire FETs
336(1)
7.4.2 Electrical Characterization
337(53)
7.4.2.1 Potential distribution inside the nanowire channels
337(1)
7.4.2.2 I-V characteristics of nanowire FETs
338(2)
7.4.2.3 Size dependence of transconductance on nanowire size
340(1)
7.5 Summary
340(3)
8 Silicon Nanowires and Related Nanostructures as Lithium-Ion Battery Anodes 343(46)
Liangbing Hu
Lifeng Cui
Seung Sae Hong
James McDonough
Yi Cui
8.1 Lithium-Ion Batteries and Different Types of Anodes
343(3)
8.2 Advantages and Challenges of Silicon Anodes
346(4)
8.3 Thin Film Silicon Anodes and Microsized Particles
350(4)
8.4 Vapor-Liquid-Solid (VLS)-Grown SiNWs as High-Capacity Anode
354(3)
8.5 Surface Characterization and Electrochemical Analysis of the Solid-Electrolyte Interphase (SEI) on Silicon Nanowires
357(4)
8.6 Si Core-Shell Structures for Anodes
361(6)
8.7 Other Si Nanostructures
367(4)
8.8 Solution-Processed Si Nanostructures
371(2)
8.9 Some Fundamental Aspects
373(7)
8.10 Remaining Challenges and Commercialization
380(9)
9 Porous Silicon Nanowires 389(24)
Yongquan Qu
Xiangfeng Duan
9.1 Introduction
389(1)
9.2 Synthesis of Porous Silicon Nanowires
390(11)
9.2.1 One-Step Chemical Etching
391(2)
9.2.2 Two-Step Chemical Etching
393(4)
9.2.2.1 Effect of [ H2O2]
395(2)
9.2.3 Effect of Doping Levels of Silicon Wafers
397(1)
9.2.4 Mechanism of Formation of Porous Silicon Nanowires
397(4)
9.3 Properties of Porous Silicon Nanowire
401(3)
9.3.1 Optical Properties
401(1)
9.3.2 Electrical Properties
402(1)
9.3.3 Porosity of the Porous Silicon Nanowires
403(1)
9.4 Applications of Porous Silicon Nanowire
404(5)
9.4.1 Photocatalysis
404(2)
9.4.2 Platform for Drug Delivery
406(1)
9.4.3 Lithium-Ion Battery
407(2)
9.5 Conclusion
409(4)
10 Nanoscale Contact Engineering for Si Nanowire Devices 413(40)
Yung-Chen Lin
Yu Huang
10.1 Scope of the
Chapter
413(1)
10.2 Introduction
414(2)
10.2.1 The Challenges of Modern Transistor for Contact Engineering
414(1)
10.2.2 NW Transistor and Silicided NW Transistor
414(1)
10.2.3 The Properties and Applications of Metal Silicides
415(1)
10.3 Synthetic Approaches to Nanoscale Silicides
416(4)
10.4 Contact Formation through Solid-State Reaction
420(2)
10.4.1 Introduction of Silicide/Si Heterostructure by Solid-State Reaction
420(1)
10.4.2 The Growth of Silicide NWs by Solid-State Reaction
421(1)
10.4.3 Forming Silicide/Si NW Heterostructure by Solid-State Reaction
422(1)
10.5 Silicide Growth Mechanism
422(11)
10.5.1 The Growth Phases of Nickel Silicides in the NW Structure
422(3)
10.5.2 Growth-Limiting Steps in the Nickel Silicide System at Nanoscale
425(2)
10.5.3 Nucleation-Controlled Growth or Interfacial-Limited Growth of Nickel Silicide
427(1)
10.5.4 Stress-Limited Growth of Nickel Silicide Phases
428(3)
10.5.5 Diffusion-Limited Growth of Nickel Silicide
431(2)
10.6 New Technical Approaches or Structures for Low-Contact Resistance FET and Short-Channel Device
433(4)
10.6.1 The Challenging for the Low-Device Junction Resistance
433(1)
10.6.2 Comparison of Junction FET, functionless FET, and Metal Heterojunction FET
434(3)
10.7 Electronic Properties of Silicide NWs and Silicide/Si/Silicide Heterostructures
437(8)
10.7.1 The Resistivity of Silicide Materials
437(1)
10.7.2 Low-Resistivity Contacts: Ohmic Contacts
437(3)
10.7.3 Conductive Contacts and Beyond: Magnetic Contacts and Schottky Contacts
440(5)
10.7.4 High-Mobility Field-Effect Transistor and Short-Channel Device
445(1)
10.8 Conclusion
445(8)
Index 453
Yu Huang is a faculty member in the Department of Materials Sciences and Engineering at the University of California, Los Angeles (UCLA), USA. She received her PhD in physical chemistry from Harvard University, USA. Her research focuses on the fundamental principles governing nanoscale material synthesis and assembly at the molecular level, which can be utilized to design nanostructures and nanodevices with unique functions and properties to address critical challenges in electronics, energy science, and biomedicine. She has received several recognitions including MRS student award, the Grant Prize Winner of Collegiate Inventors Competition, the IUPAC Young Chemist Prize, Lawrence Postdoctoral Fellowship, MIT Technology Review Worlds Top 100 Young Innovator Award, NASA Nanotech Brief Nano 50 Innovator award, the Kavli Fellowship, the Sloan Fellowship, the PECASE, DARPA Young Faculty Award and, the NIH Directors New Innovator Award.

King-Ning Tu received his PhD in applied physics from Harvard University in 1968 and was associated with IBM T. J. Watson Research Center for 25 years before joining the UCLA, USA, in 1993. He is distinguished professor in the Department of Materials Science and Engineering and the Department of Electrical Engineering at the UCLA. He has over 500 journal publications with citations over 18,000 and h-factor of 74. He received the TMS John Bardeen Award in 2013. He has co-authored the textbook Electronic Thin Film Science and authored the books Solder Joint Technology: Materials, Properties, and Reliability and Electronic Thin-Film Reliability. His research interests are focused on metalsilicon reactions, solder joint reactions, point-contact reactions in nanowires, polarity effect of electromigration on interfacial reactions, and kinetic theories of interfacial reactions.