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Silicon VLSI Technology: Fundamentals, Practice, and Modeling [Pehme köide]

4.12/5 (80 hinnangut Goodreads-ist)

James Plummer, Peter Griffin, Michael Deal

Formaat: Paperback / softback, 832 pages, kõrgus x laius x paksus: 239x193x36 mm, kaal: 1460 g
Ilmumisaeg: 25-Jul-2000
Kirjastus: Pearson
ISBN-10: 0130850373
ISBN-13: 9780130850379

Teised raamatud teemal:

Circuits & components - (Hetkel poes: 1 nimetust)
Computer science - (Hetkel poes: 7 nimetust)
Other manufacturing technologies - (Hetkel poes: 1 nimetust)

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Formaat: Paperback / softback, 832 pages, kõrgus x laius x paksus: 239x193x36 mm, kaal: 1460 g
Ilmumisaeg: 25-Jul-2000
Kirjastus: Pearson
ISBN-10: 0130850373
ISBN-13: 9780130850379

Teised raamatud teemal:

Circuits & components - (Hetkel poes: 1 nimetust)
Computer science - (Hetkel poes: 7 nimetust)
Other manufacturing technologies - (Hetkel poes: 1 nimetust)

Püsilink: https://www.kriso.ee/db/9780130850379.html

Märksõnad:

Unique in approach, this book provides an integrated view of silicon technology--with an emphasis on modern computersimulation. It describes not only the manufacturing practice associated with the technologies used in silicon chip fabrication, but also the underlying scientific basis for those technologies.Modern CMOS Technology. Crystal Growth, Wafer Fabrication and Basic Properties of Silicon Wafers. Semiconductor Manufacturing--Clean Rooms, Wafer Cleaning and Gettering. Lithography. Thermal Oxidation and the Si/SiO2 Interface. Dopant Diffusion. Ion Implantation. Thin Film Diffusion. Etching. Backend Technology. For anyone interested in Fabrication Processes.

Preface

Introduction and Historical Perspective

(48)

Introduction

(6)

Integrated Circuits and the Planar Process---Key Inventions That Made It All Possible

(6)

Semiconductors

(20)

Semiconductor Devices

(8)

PN Diodes

(3)

MOS Transistors

(3)

Bipolar Junction Transistors

(2)

Semiconductor Technology Families

(2)

Modern Scientific Discovery---Experiments, Theory, and Computer Simulation

(2)

The Plan For This Book

(1)

Summary of Key Ideas

(1)

References

(1)

Problems

(2)

Modern CMOS Technology

(44)

Introduction

(1)

CMOS Process Flow

(40)

The Beginning---Choosing a Substrate

(1)

Active Region Formation

(5)

Process Option for Device Isolation---Shallow Trench Isolation

(3)

N and P Well Formation

(3)

Process Options for Active Region and Well Formation

(8)

Gate Formation

(5)

Tip or Extension (LDD) Formation

(4)

Source/Drain Formation

(2)

Contact and Local Interconnect Formation

(2)

Multilevel Metal Formation

(6)

Summary of Key Ideas

(1)

Probems

(2)

Crystal Growth, Wafer Fabrication and Basic Properties of Silicon Wafers

(58)

Introduction

(1)

Historical Development and Basic Concepts

(16)

Crystal Structure

(3)

Defects in Crystals

(4)

Raw Materials and Purification

101

(1)

Czochralski and Float-Zone Crystal Growth Methods

102

(3)

Wafer Preparation and Specification

105

(4)

Manufacturing Methods and Equipment

109

(2)

Measurement Methods

111

(10)

Electrical Measurements

111

(1)

Hot Point Probe

112

(1)

Sheet Resistance

113

(2)

Hall Effect Measurements

115

(2)

Physical Measurements

117

(1)

Defect Etches

117

(1)

Fourier Transform Infrared Spectroscopy (FTIR)

118

(1)

Electron Microscopy

119

(2)

Models and Simulation

121

(23)

Czochralski Crystal Growth

122

(3)

Dopant Incorporation during CZ Crystal Growth

125

(3)

Zone Refining and FZ Growth

128

(3)

Point Defects

131

(7)

Oxygen in Silicon

138

(4)

Carbon in Silicon

142

(1)

Simulation

143

(1)

Limits and Future Trends in Technologies and Models

144

(2)

Summary of Key Ideas

146

(1)

References

147

(1)

Problems

148

(3)

Semiconductor Manufacturing---Clean Rooms, Wafer Cleaning, and Gettering

151

(50)

Introduction

151

(3)

Historical Development and Basic Concepts

154

(11)

Contamination Reduction: Clean Factories

157

(2)

Contamination Reduction: Wafer Cleaning

159

(2)

Contamination Reduction: Gettering

161

(4)

Manufacturing Methods and Equipment

165

(4)

Contamination Reduction: Clean Factories

165

(1)

Contamination Reduction: Wafer Cleaning

166

(1)

Contamination Reduction: Gettering

167

(2)

Measurement Methods

169

(11)

Contamination Reduction: Clean Factories

169

(4)

Contamination Reduction: Wafer Cleaning

173

(3)

Contamination Reduction: Gettering

176

(4)

Models and Simulation

180

(13)

Contamination Reduction: Clean Factories

181

(3)

Contamination Reduction: Wafer Cleaning

184

(2)

Contamination Reduction: Gettering

186

(1)

Making the Metal Atoms Mobile

186

(1)

Metal Diffusion to the Gettering Site

187

(3)

Trapping the Metal Atoms at the Gettering Site

190

(3)

Limits and Future Trends in Technologies and Models

193

(3)

Summary of Key Ideas

196

(1)

References

196

(2)

Problems

198

(3)

Lithography

201

(86)

Introduction

201

(2)

Historical Development and Basic Concepts

203

(31)

Light Sources

206

(2)

Wafer Exposure Systems

208

(1)

Optics Basics---Ray Tracing and Diffraction

209

(3)

Projection Systems (Fraunhofer Diffraction)

212

(7)

Contact and Proximity Systems (Fresnel Diffraction)

219

(2)

Photoresists

221

(2)

g-line and i-line Resists

223

(2)

Deep Ultraviolet (DUV) Resists

225

(2)

Basic Properties and Characterization of Resists

227

(3)

Mask Engineering---Optical Proximity Correction and Phase Shifting

230

(4)

Manufacturing Methods and Equipment

234

(7)

Wafer Exposure Systems

234

(4)

Photoresists

238

(3)

Measurement Methods

241

(5)

Measurement of Mask Features and Defects

242

(2)

Measurement of Resist Patterns

244

(1)

Measurement of Etched Features

244

(2)

Models and Simulation

246

(26)

Wafer Exposure Systems

247

(6)

Optical Intensity Pattern in the Photoresist

253

(6)

Photoresist Exposure

259

(1)

g-line and i-line DNQ Resists

259

(4)

DUV Resists

263

(1)

Postexposure Bake (PEB)

264

(1)

g-line and i-line DNQ Resists

264

(2)

DUV Resists

266

(1)

Photoresist Developing

267

(3)

Photoresist Postbake

270

(1)

Advanced Mask Engineering

271

(1)

Limits and Future Trends in Technologies and Models

272

(9)

Electron Beam Lithography

273

(2)

X-ray Lithography

275

(2)

Advanced Mask Engineering

277

(1)

New Resists

278

(3)

Summary of Key Ideas

281

(1)

References

281

(2)

Problems

283

(4)

Thermal Oxidation and the Si/SiO2 Interface

287

(84)

Introduction

287

(3)

Historical Development and Basic Concepts

290

(6)

Manufacturing Methods and Equipment

296

(2)

Measurement Methods

298

(14)

Physical Measurements

299

(1)

Optical Measurements

299

(2)

Electrical Measurements---The MOS Capacitor

301

(11)

Models and Simulation

312

(47)

First-Order Planar Growth Kinetic---The Linear Parabolic Model

313

(9)

Other Models for Planar Oxidation Kinetics

322

(4)

Thin Oxide SiO2 Growth Kinetics

326

(2)

Dependence of Growth Kinetics on Pressure

328

(1)

Dependence of Growth Kinetics on Crystal Orientation

329

(3)

Mixed Ambient Growth Kinetics

332

(1)

2D SiO2 Growth Kinetics

333

(6)

Advanced Point Defect Based Models for Oxidation

339

(4)

Substrate Doping Effects

343

(2)

Polysilicon Oxidation

345

(2)

Si3N4 Growth and Oxidation Kinetics

347

(3)

Silicide Oxidation

350

(2)

Si/SiO2 Interface Charges

352

(5)

Complete Oxidation Module Simulation

357

(2)

Limits and Future Trends in Technologies and Models

359

(2)

Summary of Key Ideas

361

(1)

References

361

(3)

Problems

364

(7)

Dopant Diffusion

371

(80)

Introduction

371

(3)

Historical Development and Basic Concepts

374

(18)

Dopant Solid Solubility

375

(2)

Diffusion from a Macroscopic Viewpoint

377

(2)

Analytic Solutions of the Diffusion Equation

379

(1)

Gaussian Solution in an Infinite Medium

380

(1)

Gaussian Solution Near a Surface

381

(1)

Error-Function Solution in an Infinite Medium

382

(2)

Error-Function Solution Near a Surface

384

(2)

Intrinsic Diffusion Coefficients of Dopants in Silicon

386

(2)

Effect of Successive Diffusion Steps

388

(1)

Design and Evaluation of Diffused Layers

389

(3)

Summary of Basic Diffusion Concepts

392

(1)

Manufacturing Methods and Equipment

392

(3)

Measurement Methods

395

(8)

SIMS

396

(1)

Spreading Resistance

397

(1)

Sheet Resistance

398

(1)

Capacitance Voltage

399

(1)

TEM Cross Section

399

(1)

2D Electrical Measurements Using Scanning Probe Microscopy

400

(2)

Inverse Electrical Measurements

402

(1)

Models and Simulation

403

(36)

Numerical Solutions of the Diffusion Equation

403

(3)

Modifications to Fick's Laws to Account for Electric Field Effects

406

(3)

Modifications to Fick's Laws to Account for Concentration-Dependent Diffusion

409

(4)

Segregation

413

(2)

Interfacial Dopant Pileup

415

(2)

Summary of the Macroscopic Diffusion Approach

417

(1)

The Physical Basis for Diffusion at an Atomic Scale

417

(2)

Oxidation-Enhanced or -Retarded Diffusion

419

(3)

Dopant Diffusion Occurs by Both I and V

422

(4)

Activation Energy for Self-Diffusion and Dopant Diffusion

426

(1)

Dopant-Defect Interactions

426

(6)

Chemical Equilibrium Formulation for Dopant-Defect Interactions

432

(2)

Simplified Expression for Modeling

434

(2)

Charge State Effects

436

(3)

Limits and Future Trends in Technologies and Models

439

(3)

Doping Methods

440

(1)

Advanced Dopant Profile Modeling---Fully Kinetic Description of Dopant-Defect Interactions

440

(2)

Summary of Key Ideas

442

(1)

References

443

(2)

Problems

445

(6)

Ion Implantation

451

(58)

Introduction

451

(1)

Historical Development and Basic Concepts

451

(12)

Implants in Real Silicon---The Role of the Crystal Structure

461

(2)

Manufacturing Methods and Equipment

463

(6)

High-Energy Implants

466

(2)

Ultralow Energy Implants

468

(1)

Ion Beam Heating

469

(1)

Measurement Methods

469

(1)

Models and Simulations

470

(29)

Nuclear Stopping

471

(2)

Nonlocal Electronic Stopping

473

(1)

Local Electronic Stopping

474

(1)

Total Stopping Powers

475

(1)

Damage Production

476

(3)

Damage Annealing

479

(3)

Solid-Phase Epitaxy

482

(2)

Dopant Activation

484

(2)

Transient-Enhanced Diffusion

486

(2)

Atomic-Understanding of TED

488

(9)

Effects on Devices

497

(2)

Limits and Future Trends in Technologies and Models

499

(1)

Summary of Key Ideas

500

(1)

References

500

(2)

Problems

502

(7)

Thin Film Deposition

509

(100)

Introduction

509

(2)

Historical Development and Basic Concepts

511

(43)

Chemical Vapor Deposition (CVD)

512

(1)

Atmospheric Pressure Chemical Vapor Deposition (APCVD)

513

(12)

Low-Pressure Chemical Vapor Deposition (LPCVD)

525

(2)

Plasma-Enhanced Chemical Vapor Deposition (PECVD)

527

(3)

High-Density Plasma Chemical Vapor Deposition (HDPCVD)

530

(1)

Physical Vapor Deposition (PVD)

530

(1)

Evaporation

531

(8)

Sputter Deposition

539

(15)

Manufacturing Methods

554

(18)

Epitaxial Silicon Deposition

556

(2)

Polycrystalline Silicon Deposition

558

(3)

Silicon Nitride Deposition

561

(2)

Silicon Dioxide Deposition

563

(2)

Al Deposition

565

(1)

Ti and Ti-W Deposition

566

(1)

W Deposition

567

(1)

TiSi2 and WSi2 Deposition

567

(1)

TiN Deposition

568

(2)

Cu Deposition

570

(2)

Measurement Methods

572

(1)

Models and Simulation

573

(28)

Models for Deposition Simulations

573

(1)

Models in Physically Based Simulators Such as SPEEDIE

574

(8)

Models for Different Types of Deposition Systems

582

(5)

Comparing CVD and PVD and Typical Parameter Values

587

(3)

Simulations of Deposition Using a Physically Based Simulator, SPEEDIE

590

(8)

Other Deposition Simulations

598

(3)

Limits and Future Trends in Technologies and Models

601

(1)

Summary of Key Ideas

602

(1)

References

603

(2)

Problems

605

(4)

Etching

609

(72)

Introduction

609

(3)

Historical Development and Basic Concepts

612

(25)

Wet Etching

612

(7)

Plasma Etching

619

(2)

Plasma Etching Mechanisms

621

(7)

Types of Plasma Etch Systems

628

(8)

Summary of Plasma Systems and Mechanisms

636

(1)

Manufacturing Methods

637

(13)

Plasma Etching Conditions and Issues

638

(5)

Plasma Etch Methods for Various Films

643

(1)

Plasma Etching Silicon Dioxide

644

(3)

Plasma Etching Polysilicon

647

(2)

Plasma Etching Aluminum

649

(1)

Measurement Methods

650

(3)

Models and Simulation

653

(22)

Models for Etching Simulation

653

(3)

Etching Models---Linear Etch Model

656

(7)

Etching Models---Saturation/Adsorption Model for Ion-Enhanced Etching

663

(6)

Etching Models---More Advanced Models

669

(2)

Other Etching Simulations

671

(4)

Limits and Future Trends in Technologies and Models

675

(1)

Summary of Key Ideas

676

(1)

References

677

(2)

Problems

679

(2)

Back-End Technology

681

(106)

Introduction

681

(6)

Historical Development and Basic Concepts

687

(28)

Contacts

688

(7)

Interconnects and Vias

695

(12)

Dielectrics

707

(8)

Manufacturing Methods and Equipment

715

(10)

Silicided Gates and Source/Drain Regions

716

(2)

First-Dielectric Processing

718

(1)

Contact Formation

719

(2)

Global Interconnects

721

(2)

IMD Deposition and Planarization

723

(1)

Via Formation

724

(1)

Final Steps

725

(1)

Measurement Methods

725

(12)

Morphological Measurements

726

(1)

Electrical Measurements

726

(6)

Chemical and Structural Measurements

732

(2)

Mechanical Measurements

734

(3)

Models and Simulation

737

(39)

Silicide Formation

738

(6)

Chemical-Mechanical Polishing

744

(2)

Reflow

746

(7)

Grain Growth

753

(9)

Diffusion in Polycrystalline Materials

762

(3)

Electromigration

765

(11)

Limits and Future Trends in Technologies and Models

776

(4)

Summary of Key Ideas

780

(1)

References

781

(3)

Problems

784

(3)

Appendices

787

(18)

A.1 Standard Prefixes

787

(1)

A.2 Useful Conversions

787

(1)

A.3 Physical Constants

788

(1)

A.4 Physical Properties of Silicon

788

(1)

A.5 Properties of Insulators Used in Silicon Technology

789

(1)

A.6 Color Chart for Deposited Si3N4 Films Observed Perpendicularly under Daylight Fluorescent Lighting

789

(1)

A.7 Color Chart for Thermally Grown SiO2 Films Observed Perpendicularly under Daylight Fluorescent Lighting

790

(1)

A.8 Irwin Curves

791

(2)

A.9 Error Function

793

(4)

A.10 List of Important Symbols

797

(1)

A.11 List of Common Acronyms

798

(3)

A.12 Tables in Text

801

(1)

A.13 Answers to Selected Problems

802

(3)

Index

805

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