Solid-State Power Devices: Operational Reliability and Parameters' Stability [Pehme köide]

Preface
Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton
Irradiation
Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power
Pulses
Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in
Power Cycling and High Temperature Gate Bias Tests
Dependence of the Silicon Carbide Radiation Resistance on the Irradiation
Temperature
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of
Stacking Faults
Early-Stage Reliability Evaluation of Passivation Stack and Termination
Designs in SiC MPS Diodes
A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET
with Deep P Structure
Experimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using
Embedded Current and Temperature Sensors
Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
UIS Ruggedness of Parallel 4H-SiC MOSFETs
The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under
Various Biasing Conditions
Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact
AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for
Bipolar Degradation Free SiC MOSFETs
Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB
Measurements
High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode
Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3
kV Conventional Body Diode and Embedded SBD SiC MOSFET
Demonstration of 800°C SiC MOSFETs for Extreme Temperature Applications
Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs