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Sub-Half-Micron Lithography for ULSIs [Kõva köide]

Edited by (Nano-scale Science and Technology Group, Himeji Institute of Technology), Edited by (NEC Corporation, Tsukuba, Japan), Edited by (NEC Corporation, Tsukuba, Japan)
  • Formaat: Hardback, 342 pages, kõrgus x laius x paksus: 254x197x25 mm, kaal: 990 g, 43 Tables, unspecified; 103 Halftones, unspecified
  • Ilmumisaeg: 01-Jun-2000
  • Kirjastus: Cambridge University Press
  • ISBN-10: 0521570808
  • ISBN-13: 9780521570800
Teised raamatud teemal:
  • Formaat: Hardback, 342 pages, kõrgus x laius x paksus: 254x197x25 mm, kaal: 990 g, 43 Tables, unspecified; 103 Halftones, unspecified
  • Ilmumisaeg: 01-Jun-2000
  • Kirjastus: Cambridge University Press
  • ISBN-10: 0521570808
  • ISBN-13: 9780521570800
Teised raamatud teemal:
Describes advanced techniques under development that represent the key to future semiconductor-device fabrication.

In semiconductor-device fabrication processes, lithography technology is used to print circuit patterns on semiconductor wafers. The remarkable miniaturization of semiconductor devices has been made possible only because of the continuous progress in lithography technology. However, for the trend of ever-increasing miniaturization to continue, a breakthrough in lithography technology is now needed. This book describes advanced techniques under development that represent the key to future semiconductor-device fabrication. To help the reader understand the background to developments in lithography technology, trends in ULSI technology and future prospects are reviewed, and the requirements that future lithography technology must meet are described. Several important lithography methods, such as deep UV lithography, x-ray lithography, electron-beam lithography, and focused ion-beam lithography are described in detail by experts in each area. Other relevant technologies, such as those that concern resist materials, metrology, and defect inspection and repair are also described.

Muu info

Describes advanced techniques under development that represent the key to future semiconductor-device fabrication.
List of contributors vii Preface xi Acknowledgements xiii List of principal abbreviations xiv Introduction 1(9) Masao Fukuma Device technology trends 1(6) Demands for lithography 7(2) Conclusion 9(1) References 9(1) Optical lithography 10(56) Kunihiko Kasama Shinji Okazaki Hisatake Sano Wataru Wakamiya Introduction 10(1) History 11(4) Principles 15(2) i-line lithography 17(5) Deep-UV lithography 22(18) Resolution-enhancement technologies 40(10) Mask/reticle technology 50(13) References 63(3) X-ray lithography 66(41) Kimiyoshi Deguchi Teruo Hosokawa Sunao Ishihara Katsumi Suzuki Principles 66(2) X-ray source 68(13) X-ray mask 81(7) X-ray mask alignment technology 88(8) X-ray lithography processes and device fabrication 96(8) Summary 104(1) References 105(2) Electron-beam lithography 107(89) Takayuki Abe Koichi Moriizumi Yukinori Ochiai Norio Saitou Tadahiro Takigawa Akio Yamada Direct writing 107(51) Mask writing 158(14) Data conversion 172(8) Proximity effect correction 180(11) Summary 191(1) References 192(4) Ion-beam lithography 196(17) Masanori Komuro Shinji Matsui Principles 196(2) Focused-ion-beam lithography 198(8) Masked-ion-beam lithography 206(4) Summary 210(1) References 211(2) Resists 213(65) Hiroshi Ban Tadayoshi Kokubo Makoto Nakase Takeshi Ohfuji Principles 213(12) Resists for i-line lithography 225(9) Resists for deep-UV lithography 234(18) Resists for electron-beam and X-ray lithography 252(12) Advanced resist process technology 264(8) Summary 272(1) References 273(5) Metrology, defect inspection, and repair 278(43) Tadahito Matsuda Toru Tojo Seiichi Yabumoto Introduction 278(1) Metrology 278(13) Inspection 291(17) Repair 308(9) Summary 317(1) References 318(3) Index 321