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Switchmode RF and Microwave Power Amplifiers 2nd edition [Pehme köide]

(Design Automation, Auburndale, MA, USA), (RFMD, Greensboro, NC, USA), (Bell Labs, Alcatel-Lucent, Ireland)
  • Formaat: Paperback / softback, 704 pages, kõrgus x laius: 234x191 mm, kaal: 1400 g, Approx. 290 illustrations
  • Ilmumisaeg: 13-Jan-2017
  • Kirjastus: Academic Press Inc
  • ISBN-10: 0128102551
  • ISBN-13: 9780128102558
  • Formaat: Paperback / softback, 704 pages, kõrgus x laius: 234x191 mm, kaal: 1400 g, Approx. 290 illustrations
  • Ilmumisaeg: 13-Jan-2017
  • Kirjastus: Academic Press Inc
  • ISBN-10: 0128102551
  • ISBN-13: 9780128102558

Combining solid theoretical discussions with practical design examples, this book is an essential reference on developing RF and microwave switchmode power amplifiers.

With this book you will be able to:

  • Design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors using well-known and novel theoretical approaches, nonlinear simulation tools, and practical design techniques
  • Design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies, with specified output power
  • Understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements
  • Combine multi-stage Doherty architecture and switchmode power amplifiers to significantly increase efficiency of the entire radio transmitter
  • Learn the different types of predistortion linearization techniques required to improve the quality of signal transmission in a nonlinear amplifying system

New to this edition:

  • Comprehensive overview of different Doherty architectures which are, and will be used in modern communication systems to save power consumption and reduce costs
  • A new chapter on analog and digital predistortion techniques
  • Coverage of broadband Class-F power amplifiers, high-power inverse Class-F power amplifiers for WCDMA systems, broadband Class-E techniques
  • Unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems and which offer major power consumption savings
  • Complete coverage of the new Doherty architecture which offers major efficiencies and savings on power consumption
  • Balances theory with practical implementatation, avoiding a cookbook approach, enabling engineers to develop better designs
  • Trusted content from leading figures in the field with a Foreword of endorsement by Zoya Popovic

Muu info

Improve your designs of switchmode RF and microwave power amplifiers and consume much less power
About the Authors xi
Foreword xiii
Preface xv
Acknowledgments xxi
Chapter 1 Power Amplifier Design Principles
1(82)
1.1 Spectral-domain analysis
1(6)
1.2 Basic classes of operation: A, AB, B, and C
7(6)
1.3 Load line and output impedance
13(4)
1.4 Classes of operation based upon a finite number of harmonics
17(3)
1.5 Active device models
20(12)
1.5.1 LDMOSFETs
20(4)
1.5.2 GaAs MESFETs and GaN HEMTs
24(5)
1.5.3 Low- and high-voltage HBTs
29(3)
1.6 High-frequency conduction angle
32(6)
1.7 Nonlinear effect of collector capacitance
38(4)
1.8 Push-pull power amplifiers
42(5)
1.9 Power gain and impedance matching
47(5)
1.10 Load---pull characterization
52(2)
1.11 Amplifier stability
54(8)
1.12 Parametric oscillations
62(5)
1.13 Bias circuits
67(5)
1.14 Distortion fundamentals
72(11)
1.14.1 Linearity
72(1)
1.14.2 Time variance
73(1)
1.14.3 Memory
73(1)
1.14.4 Distortion of electrical signals
73(1)
1.14.5 Types of distortion
74(1)
1.14.6 Nonlinear distortion analysis for sinusoidal signals -- measures of nonlinear distortion
75(3)
References
78(5)
Chapter 2 Class-D Power Amplifiers
83(46)
2.1 Switchmode power amplifiers with resistive load
83(9)
2.2 Complementary voltage-switching configuration
92(5)
2.3 Transformer-coupled voltage-switching configuration
97(2)
2.4 Transformer-coupled current-switching configuration
99(4)
2.5 Symmetrical current-switching configuration
103(4)
2.6 Voltage-switching configuration with reactive load
107(4)
2.7 Drive and transition time
111(7)
2.8 Practical Class-D power amplifier implementation
118(5)
2.9 Class D for digital pulse-modulation transmitters
123(6)
References
127(2)
Chapter 3 Class-F Power Amplifiers
129(66)
3.1 Biharmonic and polyharmonic operation modes
129(1)
3.2 Idealized Class-F mode
129(14)
3.3 Class-F with maximally flat waveforms
143(8)
3.4 Class-F with quarterwave transmission line
151(6)
3.5 Effect of saturation resistance and shunt capacitance
157(5)
3.6 Load networks with lumped elements
162(7)
3.7 Load networks with transmission lines
169(7)
3.8 LDMOSFET power amplifier design examples
176(5)
3.9 Broadband capability of Class-F power amplifiers
181(2)
3.10 Practical Class-F power amplifiers and applications
183(12)
References
1(194)
Chapter 4 Inverse Class-F
195(50)
4.1 Biharmonic and polyharmonic operation modes
195(7)
4.2 Idealized inverse Class-F mode
202(3)
4.3 Inverse Class-F with quarterwave transmission line
205(3)
4.4 Load networks with lumped elements
208(4)
4.5 Load networks with transmission lines
212(10)
4.6 LDMOSFET power amplifier design examples
222(4)
4.7 Examples of practical implementation
226(5)
4.8 Inverse Class-F GaN HEMT power amplifiers for WCDMA systems
231(14)
References
242(3)
Chapter 5 Class-E with Shunt Capacitance
245(60)
5.1 Effect of a detuned resonant circuit
245(5)
5.2 Load network with shunt capacitor and series filter
250(6)
5.3 Matching with a standard load
256(4)
5.4 Effect of saturation resistance
260(3)
5.5 Driving signal and finite switching time
263(7)
5.6 Effect of nonlinear shunt capacitance
270(2)
5.7 Optimum, nominal, and off-nominal Class-E operation
272(5)
5.8 Push-pull operation mode
277(4)
5.9 Load networks with transmission lines
281(10)
5.10 Practical Class-E power amplifiers and applications
291(14)
References
300(5)
Chapter 6 Class-E with Finite DC-Feed Inductance
305(52)
6.1 Class-E with one capacitor and one inductor
305(8)
6.2 Generalized Class-E load network, with finite DC-Feed inductance
313(7)
6.3 Subharmonic Class-E
320(4)
6.4 Parallel-circuit Class-E
324(6)
6.5 Even-harmonic Class-E
330(2)
6.6 Effect of bondwire inductance
332(1)
6.7 Load network with transmission lines
333(7)
6.8 Operation beyond maximum Class-E frequency
340(5)
6.9 Power gain
345(3)
6.10 CMOS Class-E power amplifiers
348(9)
References
354(3)
Chapter 7 Class-E with Quarterwave Transmission Line
357(30)
7.1 Load network with parallel quarterwave line
357(7)
7.2 Optimum load-network parameters
364(3)
7.3 Load network with zero series reactance
367(5)
7.4 Matching circuit with lumped elements
372(1)
7.5 Matching circuit with transmission lines
373(3)
7.6 Load network with series quarterwave line and shunt filter
376(2)
7.7 Design example: 10-W, 2.14-GHz Class-E GaN HEMT power amplifier with parallel quarterwave transmission line
378(9)
References
385(2)
Chapter 8 Broadband Class-E
387(42)
8.1 Reactance compensation technique
387(13)
8.1.1 Load networks with lumped elements
388(6)
8.1.2 Load networks with transmission lines
394(6)
8.2 Broadband Class-E with shunt capacitance
400(9)
8.3 Broadband parallel-circuit Class-E
409(7)
8.4 High-power RF Class-E power amplifiers
416(3)
8.5 Microwave monolithic Class-E power amplifiers
419(5)
8.6 CMOS Class-E power amplifiers
424(5)
References
426(3)
Chapter 9 Alternative and Mixed-Mode High-Efficiency Power Amplifiers
429(100)
9.1 Class-DE power amplifier
430(14)
9.2 Class-FE power amplifiers
444(18)
9.3 Class-E/F power amplifiers
462(26)
9.3.1 Symmetrical push-pull configurations
465(6)
9.3.2 Single-ended Class-E/F3 mode
471(17)
9.4 Biharmonic Class-EM power amplifier
488(7)
9.5 Inverse Class-E power amplifiers
495(8)
9.6 Harmonic tuning using load-pull techniques
503(9)
9.7 Chireix outphasing power amplifiers
512(17)
References
524(5)
Chapter 10 High-Efficiency Doherty Power Amplifiers
529(46)
10.1 Historical aspects and conventional Doherty architecture
529(11)
10.2 Carrier and peaking amplifiers with harmonic control
540(3)
10.3 Balanced, push-pull, and dual Doherty amplifiers
543(3)
10.4 Asymmetric Doherty amplifiers
546(4)
10.5 Multistage Doherty amplifiers
550(6)
10.6 Inverted Doherty amplifiers
556(3)
10.7 Integration
559(3)
10.8 Digitally driven Doherty amplifier
562(2)
10.9 Multiband and broadband capability
564(11)
References
568(7)
Chapter 11 Predistortion Linearization Techniques
575(32)
11.1 Modeling of RF power amplifiers with memory
576(6)
11.2 Predistortion linearization
582(9)
11.2.1 Introduction
582(2)
11.2.2 Memoryless predistorter for octave-bandwidth amplifiers
584(5)
11.2.3 Predistorter with memory for octave-bandwidth amplifiers
589(1)
11.2.4 Postdistortion
590(1)
11.3 Analog predistortion implementation
591(7)
11.3.1 Introduction
591(1)
11.3.2 Reflective predistorters
591(2)
11.3.3 Transmissive predistorters
593(5)
11.4 Digital predistortion implementation
598(9)
11.4.1 Introduction
598(1)
11.4.2 Principles of memoryless digital predistortion
598(3)
11.4.3 Digital predistortion adaptation
601(2)
11.4.4 Digital predistorter performance
603(1)
References
604(3)
Chapter 12 Computer-Aided Design of Switchmode Power Amplifiers
607(61)
12.1 HB-PLUS program for half-bridge and full-bridge direct-coupled voltage-switching Class-D and Class-DE circuits
608(5)
12.1.1 Program capabilities
608(1)
12.1.2 Circuit topologies
609(2)
12.1.3 Class-D versus Class-DE
611(2)
12.2 HEPA-PLUS CAD program for Class-E
613(3)
12.2.1 Program capabilities
613(1)
12.2.2 Steady-state periodic response
614(1)
12.2.3 Transient response
614(1)
12.2.4 Circuit topology
614(1)
12.2.5 Optimization
615(1)
12.3 Effect of Class-E load-network parameter variations
616(3)
12.4 HB-PLUS CAD examples for Class-D and Class-DE
619(7)
12.4.1 Class-D with hard switching
620(3)
12.4.2 Class-DE with soft switching
623(3)
12.5 HEPA-PLUS CAD example for Class-E
626(12)
12.5.1 Evaluate a candidate transistor
626(1)
12.5.2 Use the automatic preliminary design module to obtain a nominal-waveform Class-E design
627(2)
12.5.3 Simulate the nominal-waveforms circuit
629(1)
12.5.4 RF output spectrum
629(2)
12.5.5 Optimize the design, using the nominal-waveforms design as a starting-point
631(4)
12.5.6 Use the SWEEP function
635(3)
12.6 Class-E power amplifier design using SPICE
638(6)
12.7 ADS circuit simulator and its applicability to switchmode Class-E
644(5)
12.8 ADS CAD design example: high-efficiency two-stage 1.75-GHz MMIC HBT power amplifier
649(19)
References 668(1)
Index 669
Dr. Andrei Grebennikov is a Senior Member of the IEEE and a Member of Editorial Board of the International Journal of RF and Microwave Computer-Aided Engineering. He received his Dipl. Ing. degree in radio electronics from the Moscow Institute of Physics and Technology and Ph.D. degree in radio engineering from the Moscow Technical University of Communications and Informatics in 1980 and 1991, respectively.He has obtained a long-term academic and industrial experience working with the Moscow Technical University of Communications and Informatics, Russia, Institute of Microelectronics, Singapore, M/A-COM, Ireland, Infineon Technologies, Germany/Austria, and Bell Labs, Alcatel-Lucent, Ireland, as an engineer, researcher, lecturer, and educator.He lectured as a Guest Professor in the University of Linz, Austria, and presented short courses and tutorials as an Invited Speaker at the International Microwave Symposium, European and Asia-Pacific Microwave Conferences, Institute of Microelectronics, Singapore, and Motorola Design Centre, Malaysia. He is an author or co-author of more than 80 technical papers, 5 books, and 15 European and US patents. In 1989, Mr. Sokal was elected a Fellow of the IEEE, for his contributions to the technology of high-efficiency switching-mode power conversion and switching-mode RF power amplification. In 2007, he received the Microwave Pioneer award from the IEEE Microwave Theory and Techniques Society, in recognition of a major, lasting, contribution ? development of the Class-E RF power amplifier. In 2011, he was awarded an honorary doctorate from the Polytechnic University of Madrid, Spain, for developing the high-efficiency switching-mode Class-E RF power amplifierIn 1965, he founded Design Automation, Inc., a consulting company doing electronics design review, product design, and solving unsolvable problems for equipment-manufacturing clients. Much of that work has been on high-efficiency switching-mode RF power amplifiers at frequencies up to 2.5 GHz, and switching-mode dc-dc power converters. He holds eight patents in power electronics, and is the author or co-author of two books and approximately 130 technical papers, mostly on high-efficiency generation of RF power and dc power.During 19501965, he held engineering and supervisory positions for design, manufacture, and applications of analog and digital equipment.He received B.S. and M.S. degrees in Electrical Engineering from the Massachusetts Institute of Technology, Cambridge, Massachusetts, in 1950.He is a Technical Adviser to the American Radio Relay League, on RF power amplifiers and dc power supplies, and a member of the Electromagnetics Society, Eta Kappa Nu, and Sigma Xi honorary professional societies. Marc J. Franco holds a Ph.D. degree in electrical engineering from Drexel University, Philadelphia. He is currently with RFMD, Technology Platforms, Component Advanced Development, Greensboro, North Carolina, USA, where he is involved with the design of advanced RF integrated circuits and integrated front-end modules. He was previously with Linearizer Technology, Inc. Hamilton, New Jersey, where he led the development of advanced RF products for commercial, military and space applications.Dr. Franco is a regular reviewer for the Radio & Wireless Symposium, the European Microwave Conference and the MTT International Microwave Symposium. He is a member of the MTT-17 HF-VHF-UHF Technology Technical Coordination Committee and has co-chaired the IEEE Topical Conference on Power Amplifiers for Radio and Wireless Applications. He is a Senior Member of the IEEE.His current research interests include high-efficiency RF power amplifiers, nonlinear distortion correction, and electromagnetic analysis of structures.