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Thin Film and Depth Profile Analysis Softcover reprint of the original 1st ed. 1984 [Pehme köide]

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  • Formaat: Paperback / softback, 208 pages, kõrgus x laius: 244x170 mm, kaal: 395 g, XII, 208 p., 1 Paperback / softback
  • Sari: Topics in Current Physics 37
  • Ilmumisaeg: 27-Mar-2012
  • Kirjastus: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
  • ISBN-10: 3642465013
  • ISBN-13: 9783642465017
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  • Formaat: Paperback / softback, 208 pages, kõrgus x laius: 244x170 mm, kaal: 395 g, XII, 208 p., 1 Paperback / softback
  • Sari: Topics in Current Physics 37
  • Ilmumisaeg: 27-Mar-2012
  • Kirjastus: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
  • ISBN-10: 3642465013
  • ISBN-13: 9783642465017
The characterization of thin films and solid interfaces as well as the determina­ tion of concentration profiles in thin solid layers is one of the fields which re­ quire a rapid transfer of the results from basic research to technological applica­ tions and developments. It is the merit of the Dr. Wilhelm Heinrich and Else Heraeus-Stiftung to promote such a transfer by organizing high standard seminars mostly held at the "Physikzentrum" in Bad Honnef near Bonn. The present book has been stimulated by one of these seminars assembling most of the invited speakers as co-authors. The editor appreciates the cooperation of his colleagues contributing to this book. H. Oechsner Kaiserslautern, April 1984 v Contents 1. Introduction. ByH. Oechsner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 1 Requirements for Thin Film and In-Depth Analysis . . . . . . . . . . . . . . . . . . . 1 1. 2 Object and Outl i ne of the Book . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 References 2. The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis. By H. W. Werner (With 25 Fi gures) . . . . . . . . . . . . . . . . 5 2. 1 Methods to Determine Chemical Structures in Material Research 5 2. 2 Selected Analytical Features Used to Determine Chemical Structures 9 2. 2. 1 Depth Profi 1 ing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 a) Destructive Depth Profiling b) Nondestructive Methods for Depth and Thin Film Analysis 15 19 2. 2. 2 Microspot Analysis and Element Imaging 2. 3 Determining Physical Structures in Material Research . . . . . . . . . . . . . . . 27 2. 3. 1 X-Ray Diffraction . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 27 2. 3. 2 X-Ray Double Crystal Diffraction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 2. 3.

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Springer Book Archives
1 Introduction
1(4)
H. Oechsner
1.1 Requirements for Thin Film and In-Depth Analysis
1(1)
1.2 Object and Outline of the Book
2(3)
References
4(1)
2 The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis (With 25 Figures)
5(34)
H.W. Werner
2.1 Methods to Determine Chemical Structures in Material Research
5(4)
2.2 Selected Analytical Features Used to Determine Chemical Structures
9(18)
2.2.1 Depth Profiling
9(1)
a) Destructive Depth Profiling
9(6)
b) Nondestructive Methods for Depth and Thin Film Analysis
15(4)
2.2.2 Microspot Analysis and Element Imaging
19(8)
2.3 Determining Physical Structures in Material Research
27(2)
2.3.1 X-Ray Diffraction
27(1)
2.3.2 X-Ray Double Crystal Diffraction
28(1)
2.3.3 Ultrasonic (Acoustic) Microscopy
29(1)
2.4 Application of Different Microanalytical Techniques to Specific Analytical Problems
29(7)
2.4.1 AES and TEM-EDX in Interface Analysis of MnZn Ferrites
29(2)
2.4.2 Interfaces of SrTiO3 Boundary Layer Capacitor Material Studies by TEM and Selected-Area EDX
31(1)
2.4.3 Analysis of GaAlAs with SIMS, X-Ray Diffraction and AES
32(4)
2.5 Future Prospects
36(3)
References
37(2)
3 Depth Profile and Interface Analysis of Thin Films by AES and XPS
39(24)
H.J. Mathieu
3.1 Quantification from First Principles
39(4)
3.2 Initial Transient Layer
43(4)
3.3 Steady-State Region
47(4)
3.4 Film-Substrate Interface
51(12)
References
58(5)
4 Secondary Neutral Mass Spectrometry (SNMS) and Its Application to Depth Profile and Interface Analysis
63(24)
H. Oechsner
4.1 Background
63(1)
4.2 Experimental Method
64(5)
4.2.1 Related Techniques
64(1)
4.2.2 Performance of SNMS
65(1)
a) The Postionizing Method
65(2)
b) Operation Modes of SNMS
67(2)
4.3 Quantification of SNMS
69(8)
4.3.1 Quantification for Atomic Sputtering
70(4)
4.3.2 Quantification Using Molecular SNMS Signals
74(2)
4.3.3 Sensitivity of SNMS
76(1)
4.4 Applications of SNMS to Depth Profile Analysis
77(7)
4.4.1 General Considerations
77(3)
4.4.2 Examples of Depth Profiling by SNMS
80(4)
4.5 Concluding Remarks
84(3)
References
84(3)
5 In-Situ Laser Measurements of Sputter Rates During SIMS/AES In-Depth Profiling
87(16)
J.E. Kempf
H.H. Wagner
5.1 Background
87(1)
5.2 Principles of Laser Technique
87(2)
5.2.1 Laser Optical Arrangement
87(1)
5.2.2 Phase and Reflectance Measurement
88(1)
5.2.3 Fundamentals of Sputter-Rate Determination
88(1)
5.3 Experiments
89(1)
5.4 Results and Discussion
90(8)
5.4.1 Signal Artefacts
90(1)
5.4.2 Phase and Reflectance Measurements During Sputtering
91(1)
a) Sputtering of Silicon Surfaces
91(3)
b) Doped Silicon
94(1)
c) Metal Film Material
94(2)
d) Transparent Material
96(1)
e) Opaque and Transparent Multilayers
97(1)
5.5 Conclusion
98(1)
5.A Appendix
99(1)
A.1 Opaque Material
99(1)
A.2 Transparent Material
99(4)
References
101(2)
6 Physical Limitations to Sputter Profiling at Interfaces - Model Experiments with Ce/Si Using KARMA
103(38)
J. Kirschner
H.-W. Etzkorn
6.1 Background
103(5)
6.1.1 General Problems Encountered in Sputter Profiling
103(4)
6.1.2 Requirements for a Model Experiment
107(1)
6.2 Experimental Approach
108(4)
6.2.1 KARMA
108(3)
6.2.2 Sample Preparation
111(1)
6.3 Conversion of Raw Sputter Profiles into Depth Profiles
112(8)
6.3.1 Establishing the Depth Scale
112(2)
6.3.2 Escape-Depth Correction
114(4)
6.3.3 Self-Consistent Determination of Effective Mean Free Paths
118(2)
6.4 Depth Profiles of the Ge/Si Interface
120(7)
6.4.1 Asymmetry of Depth Profiles
120(5)
6.4.2 Broadening as a Function of Ion Mass and Energy
125(2)
6.5 Dose Effects and Preferential Sputtering
127(3)
6.5.1 Dose Effects
127(2)
6.5.2 Preferential Sputtering
129(1)
6.6 Depth Resolution in Sputter Profiling
130(4)
6.6.1 Depth Resolution Limits
131(3)
6.7 Summary and Outlook
134(7)
References
137(4)
7 Depth Resolution and Quantitative Evaluation of AES Sputtering Profiles
141(18)
S. Hofmann
J.M. Sanz
7.1 Background
141(1)
7.2 Calibration of the Depth Scale
142(1)
7.3 Calibration of the Concentration Scale
143(2)
7.4 Depth Resolution in Sputter Profiling
145(1)
7.5 Determination of the Resolution Function
146(6)
7.5.1 Definition of Depth Resolution
146(1)
7.5.2 Experimental Determination of Depth Resolution
147(1)
7.5.3 Model Descriptions of Depth Resolution
148(4)
7.6 Deconvolution Procedures
152(4)
7.7 Conclusion
156(3)
References
156(3)
8 The Theory of Recoil Mixing in Solids
159(42)
U. Littmark
W.O. Hofer
8.1 Background
159(2)
8.1.1 Nomenclature
160(1)
8.2 Review of Recoil Mixing Models
161(9)
8.2.1 Primary Recoil Implantation and Mixing
163(2)
8.2.2 Cascade Mixing
165(1)
a) Random-Walk Models
165(1)
b) Transport Theory Approach
166(2)
c) Miscellaneous Approaches
168(2)
8.3 General Formulation of Atomic Relocation Phenomena
170(14)
8.3.1 Target Description
171(1)
a) Unbounded Total Density N(φ, x)
172(1)
b) Total Density Bounded to N(x) = N0
172(1)
8.3.2 Description of Atomic Relocation
173(2)
8.3.3 Balance Equation-for Atomic Relocation
175(3)
a) The Diffusion Approximation
178(6)
8.4 Solutions to the Specific Mixing Models
184(12)
8.4.1 Thermal Mixing and Thermal Diffusion
184(2)
8.4.2 Recoil Mixing
186(3)
a) Cascade Mixing, Diffusion Approaches
189(1)
b) Cascade Mixing, Forthright Solutions
190(6)
8.5 Summary and Outlook
196(2)
8.6 List of Symbols
198(3)
References
199(2)
Additional References with Titles 201(2)
Subject Index 203