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1 | (4) |
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1.1 Requirements for Thin Film and In-Depth Analysis |
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1 | (1) |
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1.2 Object and Outline of the Book |
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2 | (3) |
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4 | (1) |
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2 The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis (With 25 Figures) |
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5 | (34) |
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2.1 Methods to Determine Chemical Structures in Material Research |
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5 | (4) |
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2.2 Selected Analytical Features Used to Determine Chemical Structures |
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9 | (18) |
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9 | (1) |
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a) Destructive Depth Profiling |
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9 | (6) |
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b) Nondestructive Methods for Depth and Thin Film Analysis |
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15 | (4) |
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2.2.2 Microspot Analysis and Element Imaging |
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19 | (8) |
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2.3 Determining Physical Structures in Material Research |
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27 | (2) |
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27 | (1) |
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2.3.2 X-Ray Double Crystal Diffraction |
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28 | (1) |
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2.3.3 Ultrasonic (Acoustic) Microscopy |
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29 | (1) |
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2.4 Application of Different Microanalytical Techniques to Specific Analytical Problems |
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29 | (7) |
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2.4.1 AES and TEM-EDX in Interface Analysis of MnZn Ferrites |
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29 | (2) |
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2.4.2 Interfaces of SrTiO3 Boundary Layer Capacitor Material Studies by TEM and Selected-Area EDX |
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31 | (1) |
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2.4.3 Analysis of GaAlAs with SIMS, X-Ray Diffraction and AES |
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32 | (4) |
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36 | (3) |
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37 | (2) |
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3 Depth Profile and Interface Analysis of Thin Films by AES and XPS |
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39 | (24) |
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3.1 Quantification from First Principles |
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39 | (4) |
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3.2 Initial Transient Layer |
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43 | (4) |
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47 | (4) |
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3.4 Film-Substrate Interface |
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51 | (12) |
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58 | (5) |
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4 Secondary Neutral Mass Spectrometry (SNMS) and Its Application to Depth Profile and Interface Analysis |
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63 | (24) |
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63 | (1) |
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64 | (5) |
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64 | (1) |
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4.2.2 Performance of SNMS |
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65 | (1) |
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a) The Postionizing Method |
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65 | (2) |
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b) Operation Modes of SNMS |
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67 | (2) |
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4.3 Quantification of SNMS |
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69 | (8) |
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4.3.1 Quantification for Atomic Sputtering |
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70 | (4) |
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4.3.2 Quantification Using Molecular SNMS Signals |
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74 | (2) |
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4.3.3 Sensitivity of SNMS |
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76 | (1) |
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4.4 Applications of SNMS to Depth Profile Analysis |
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77 | (7) |
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4.4.1 General Considerations |
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77 | (3) |
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4.4.2 Examples of Depth Profiling by SNMS |
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80 | (4) |
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84 | (3) |
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84 | (3) |
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5 In-Situ Laser Measurements of Sputter Rates During SIMS/AES In-Depth Profiling |
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87 | (16) |
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87 | (1) |
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5.2 Principles of Laser Technique |
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87 | (2) |
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5.2.1 Laser Optical Arrangement |
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87 | (1) |
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5.2.2 Phase and Reflectance Measurement |
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88 | (1) |
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5.2.3 Fundamentals of Sputter-Rate Determination |
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88 | (1) |
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89 | (1) |
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5.4 Results and Discussion |
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90 | (8) |
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90 | (1) |
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5.4.2 Phase and Reflectance Measurements During Sputtering |
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91 | (1) |
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a) Sputtering of Silicon Surfaces |
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91 | (3) |
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94 | (1) |
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94 | (2) |
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96 | (1) |
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e) Opaque and Transparent Multilayers |
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97 | (1) |
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98 | (1) |
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99 | (1) |
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99 | (1) |
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99 | (4) |
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101 | (2) |
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6 Physical Limitations to Sputter Profiling at Interfaces - Model Experiments with Ce/Si Using KARMA |
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103 | (38) |
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103 | (5) |
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6.1.1 General Problems Encountered in Sputter Profiling |
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103 | (4) |
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6.1.2 Requirements for a Model Experiment |
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107 | (1) |
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6.2 Experimental Approach |
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108 | (4) |
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108 | (3) |
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111 | (1) |
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6.3 Conversion of Raw Sputter Profiles into Depth Profiles |
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112 | (8) |
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6.3.1 Establishing the Depth Scale |
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112 | (2) |
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6.3.2 Escape-Depth Correction |
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114 | (4) |
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6.3.3 Self-Consistent Determination of Effective Mean Free Paths |
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118 | (2) |
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6.4 Depth Profiles of the Ge/Si Interface |
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120 | (7) |
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6.4.1 Asymmetry of Depth Profiles |
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120 | (5) |
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6.4.2 Broadening as a Function of Ion Mass and Energy |
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125 | (2) |
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6.5 Dose Effects and Preferential Sputtering |
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127 | (3) |
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127 | (2) |
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6.5.2 Preferential Sputtering |
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129 | (1) |
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6.6 Depth Resolution in Sputter Profiling |
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130 | (4) |
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6.6.1 Depth Resolution Limits |
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131 | (3) |
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134 | (7) |
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137 | (4) |
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7 Depth Resolution and Quantitative Evaluation of AES Sputtering Profiles |
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141 | (18) |
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141 | (1) |
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7.2 Calibration of the Depth Scale |
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142 | (1) |
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7.3 Calibration of the Concentration Scale |
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143 | (2) |
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7.4 Depth Resolution in Sputter Profiling |
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145 | (1) |
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7.5 Determination of the Resolution Function |
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146 | (6) |
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7.5.1 Definition of Depth Resolution |
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146 | (1) |
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7.5.2 Experimental Determination of Depth Resolution |
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147 | (1) |
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7.5.3 Model Descriptions of Depth Resolution |
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148 | (4) |
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7.6 Deconvolution Procedures |
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152 | (4) |
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156 | (3) |
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156 | (3) |
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8 The Theory of Recoil Mixing in Solids |
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159 | (42) |
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159 | (2) |
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160 | (1) |
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8.2 Review of Recoil Mixing Models |
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161 | (9) |
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8.2.1 Primary Recoil Implantation and Mixing |
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163 | (2) |
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165 | (1) |
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165 | (1) |
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b) Transport Theory Approach |
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166 | (2) |
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c) Miscellaneous Approaches |
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168 | (2) |
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8.3 General Formulation of Atomic Relocation Phenomena |
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170 | (14) |
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171 | (1) |
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a) Unbounded Total Density N(φ, x) |
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172 | (1) |
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b) Total Density Bounded to N(x) = N0 |
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172 | (1) |
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8.3.2 Description of Atomic Relocation |
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173 | (2) |
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8.3.3 Balance Equation-for Atomic Relocation |
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175 | (3) |
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a) The Diffusion Approximation |
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178 | (6) |
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8.4 Solutions to the Specific Mixing Models |
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184 | (12) |
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8.4.1 Thermal Mixing and Thermal Diffusion |
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184 | (2) |
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186 | (3) |
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a) Cascade Mixing, Diffusion Approaches |
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189 | (1) |
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b) Cascade Mixing, Forthright Solutions |
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190 | (6) |
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196 | (2) |
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198 | (3) |
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199 | (2) |
Additional References with Titles |
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201 | (2) |
Subject Index |
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203 | |