| Table of Contents |
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v | |
| List of Contributors |
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ix | |
| Preface |
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x | |
| CHAPTER 1 Introduction |
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1 | (14) |
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1. Brief History of Thin Film Transistors |
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1 | (4) |
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5 | (5) |
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3. Unique a-Si:H TFT Issues |
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10 | (1) |
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4. Chapter Flow in the Book |
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10 | (3) |
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13 | (2) |
| CHAPTER 2 a-Si:H TFT Thin Film and Substrate Materials |
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15 | (64) |
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Andrew J. Flewitt and William I. Milne |
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15 | (1) |
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16 | (24) |
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40 | (13) |
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53 | (3) |
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5. Characterization Techniques |
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56 | (12) |
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68 | (1) |
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69 | (6) |
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75 | (4) |
| CHAPTER 3 Device Physics, Compact Modeling, and Circuit Applications of a-Si:H TFTs |
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79 | (104) |
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Arokia Nathan, Peyman Servati, Karim S. Karim, Denis Striakhdev, and Andrei Sazonov |
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79 | (3) |
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2. Density of States and Electronic Transport |
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82 | (8) |
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3. Device Physics and Compact Modeling |
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90 | (43) |
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4. Threshold Voltage Metastibility |
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133 | (7) |
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140 | (15) |
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155 | (13) |
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168 | (2) |
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170 | (6) |
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176 | (7) |
| CHAPTER 4 a-Si:H TFT Structures |
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183 | (20) |
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183 | (1) |
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183 | (5) |
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3. Simplified Structures and Processes |
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188 | (4) |
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4. Unique Structures and Processes |
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192 | (3) |
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195 | (3) |
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198 | (2) |
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200 | (2) |
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202 | (1) |
| CHAPTER 5 Deposition of Intrinsic and Doped Semiconductor Thin Films for a-Si:H TFT |
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203 | (38) |
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203 | (3) |
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2. Semiconductor Layer Deposition |
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206 | (17) |
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3. Doped Amorphous and Microcrystalline Silicon |
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223 | (8) |
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231 | (2) |
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233 | (6) |
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239 | (2) |
| CHAPTER 6 Deposition of Dielectric Thin Films for a-Si:H TFT |
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241 | (32) |
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241 | (1) |
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2. Selection of Dielectric Materials and Deposition Methods |
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242 | (2) |
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3. PECVD SiNx Dielectric Layer |
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244 | (19) |
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4. Yield Issues Related to Dielectrics |
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263 | (2) |
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265 | (2) |
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267 | (4) |
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271 | (2) |
| CHAPTER 7 Plasma Etching in a-Si:H TFT Array Fabrication |
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273 | (40) |
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273 | (5) |
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2. Topics in Plama Etching of a-Si:H TFTs |
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278 | (28) |
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306 | (1) |
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307 | (6) |
| CHAPTER 8 Metallization in a-Si:H TFT Array Fabrication |
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313 | (64) |
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Ken-ichi Onisawa, Shinji Takayama, Yuzo Shigesato, Takuya Takahashi |
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313 | (1) |
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2. Basic Understanding of Conductor Lines in TFT LCDs |
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314 | (4) |
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3. Conductor Requirements for a-Si:H TFTs |
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318 | (3) |
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4. Conducting Materials for TFT Array |
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321 | (3) |
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5. Key Issues in Conducting Materials for Advanced TFT Array Fabrication |
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324 | (13) |
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6. Conductor Deposition for TFT Arrays |
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337 | (10) |
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7. Wet Etching of Conductors for a-Si:H TFT Arrays |
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347 | (17) |
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364 | (2) |
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366 | (9) |
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375 | (2) |
| CHAPTER 9 Catalytic Chemical Vapor Deposition of a-Si:H TFT |
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377 | (18) |
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Hideki Matsumura, Akira Izumi, and Atsushi Masuda |
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1. Introduction: Cat-CVD vs. PECVD |
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377 | (1) |
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378 | (1) |
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3. Fundamentals of Cat-CVD Technology |
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379 | (7) |
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4. Performance of Cat-CVD a-Si:H TFT |
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386 | (5) |
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391 | (1) |
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392 | (2) |
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394 | (1) |
| CHAPTER 10 a-Si:H TFT-Based Active Matrix Flat-Panel Imagers for Medical X-ray Applications |
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395 | (90) |
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1. Introduction and Background |
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395 | (9) |
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2. Basic Design and Operation of AMFPls |
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404 | (27) |
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3. Detailed Functioning and Properties of AMFPIs |
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431 | (37) |
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468 | (4) |
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472 | (10) |
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482 | (3) |
| CHAPTER 11 Non-LCD Applications of a-Si:H TFTs |
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485 | (22) |
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485 | (1) |
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485 | (1) |
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486 | (5) |
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4. Contact Imagers, Scanners, and Printers |
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491 | (4) |
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495 | (2) |
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497 | (3) |
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7. Circuits on Various substrates |
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500 | (3) |
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503 | (1) |
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504 | (3) |
| Index |
|
507 | |
| List of Contributors |
|
ix | |
| Preface |
|
xi | |
| CHAPTER 1 Introduction |
|
1 | (7) |
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1. The Increase in Poly-Si TFT Activities |
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1 | (1) |
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2. Scientific and Technology Issues on Poly-Si TFTs |
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2 | (2) |
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3. Chapter Flow in the Book |
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4 | (4) |
| CHAPTER 2 Poly-Si Thin Film and Substrate Materials |
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8 | (87) |
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Oliver Bonnaud, Tayeb Mohammed-Brahim, and Dieter G. Ast |
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8 | (1) |
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2. Poly-Si Basic Material Properties for TFT Applications |
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9 | (43) |
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3. Dielectric Material Properties for Poly-Si TFT Applications |
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52 | (14) |
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66 | (16) |
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82 | (2) |
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84 | (8) |
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92 | (3) |
| CHAPTER 3 Physics and Modeling of Poly-, Micro-, and Nano-Si TFTs |
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Benjamin Iniguez, Trond Ytterdal, Tor A. Fjeldy, and Michael S. Shur |
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95 | (1) |
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2. Physics of Poly-Si TFTs |
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96 | (7) |
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3. Poly-Si TFT Device Models |
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103 | (17) |
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4. Micro- and Nano-Crystalline Silicon TFTs |
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120 | (13) |
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5. Circuit Simulation Examples |
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133 | (4) |
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137 | (1) |
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138 | (4) |
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142 | (3) |
| CHAPTER 4 Poly-Si TFT Structures |
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145 | (31) |
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145 | (1) |
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146 | (12) |
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158 | (7) |
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165 | (5) |
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170 | (1) |
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171 | (4) |
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175 | (1) |
| CHAPTER 5 Poly-Si TFTs by Laser Crystallization Methods |
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176 | (44) |
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176 | (1) |
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176 | (1) |
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3. Pulsed Laser Heating and Rapid Crystallization |
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177 | (7) |
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4. Structural and Electrical Properties |
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184 | (22) |
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5. Poly-Si TFT Fabrication and its Characteristics |
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206 | (4) |
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6. Large Crystalline Grain |
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210 | (1) |
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7. CW Laser Crystallization |
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211 | (1) |
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212 | (2) |
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214 | (5) |
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219 | (1) |
| CHAPTER 6 Poly-Si TFTs by Non-Laser Crystallization Methods |
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220 | (54) |
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220 | (1) |
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2. Solid Phase Crystallization (SPC) by Thermal Methods |
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221 | (9) |
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3. Metal Induced Crystallization of a-Si |
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230 | (24) |
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4. Non-Metal Induced Crystallization |
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254 | (6) |
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260 | (1) |
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261 | (9) |
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270 | (4) |
| CHAPTER 7 Poly-Si TFTs by Direct Deposition Methods |
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274 | (19) |
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274 | (2) |
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2. Plasma Enhanced Chemical Vapor Deposition of Poly-Si |
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276 | (6) |
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282 | (1) |
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4. Low Pressure Chemical Vapor Deposition |
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283 | (3) |
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286 | (2) |
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288 | (3) |
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291 | (2) |
| CHAPTER 8 Doping Techniques for Poly-Si TFTs |
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293 | (14) |
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293 | (1) |
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2. Impact of Doping Techniques |
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294 | (3) |
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297 | (3) |
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4. Activation of Dopant Methods |
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300 | (2) |
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302 | (2) |
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304 | (1) |
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305 | (2) |
| CHAPTER 9 Gate Insulators for Poly-Si TFTs |
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307 | (17) |
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307 | (1) |
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2. Required Features for Low Temperature Gate insulators |
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308 | (2) |
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310 | (5) |
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315 | (3) |
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318 | (2) |
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320 | (2) |
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322 | (2) |
| CHAPTER 10 Process Integration Issues for Poly-Si TFT Fabrication |
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324 | (36) |
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324 | (2) |
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2. Key Process Integration Issues |
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326 | (19) |
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3. Poly-Si TFT Performances |
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345 | (9) |
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354 | (1) |
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355 | (3) |
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358 | (2) |
| CHAPTER 11 Poly-Si TFT Drivers |
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360 | (66) |
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Byong-Deok Choi, Inhwan Lee, and Oh-Kong Kwon |
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360 | (6) |
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2. Poly-Si TFT Device Characteristics for High Performance Display Drivers |
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366 | (6) |
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3. Poly-Si TFT LCD Data Drivers |
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372 | (29) |
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4. Low Power Consumption Driving Techniques and Circuit Design Using Poly-Si TFT |
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401 | (6) |
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5. Fault-tolerant Poly-Si TFT Circuits |
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407 | (2) |
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6. Poly-Si TFT for Organic EL Display: Pixel Design |
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409 | (7) |
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7. Comparison of Poly-Si TFT Driver Circuits and a-Si:H TFT Driver Circuits |
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416 | (4) |
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420 | (1) |
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421 | (3) |
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424 | (2) |
| CHAPTER 12 Approaches to Poly-Si TFTs on Flexible substrates |
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426 | (38) |
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Youngchul Lee and Stephen J. Fonash |
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426 | (2) |
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428 | (3) |
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3. Direct Fabrication on Flexible substrates |
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431 | (16) |
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4. Separation and Transfer Approaches |
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447 | (6) |
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5. Reliability of Poly-Si TFTs on Flexible Substrates |
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453 | (5) |
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458 | (1) |
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459 | (3) |
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462 | (2) |
| CHAPTER 13 Poly-Si TFTs for non-LCD Applications |
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464 | (33) |
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464 | (1) |
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465 | (12) |
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3. Non-VLSIC Applications |
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477 | (15) |
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492 | (1) |
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493 | (3) |
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496 | (1) |
| INDEX |
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497 | |