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Tunneling Field Effect Transistor Technology 1st ed. 2016 [Kõva köide]

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  • Formaat: Hardback, 213 pages, kõrgus x laius: 235x155 mm, kaal: 4616 g, 122 Illustrations, color; 25 Illustrations, black and white; IX, 213 p. 147 illus., 122 illus. in color., 1 Hardback
  • Ilmumisaeg: 15-Apr-2016
  • Kirjastus: Springer International Publishing AG
  • ISBN-10: 3319316516
  • ISBN-13: 9783319316512
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  • Kõva köide
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  • Formaat: Hardback, 213 pages, kõrgus x laius: 235x155 mm, kaal: 4616 g, 122 Illustrations, color; 25 Illustrations, black and white; IX, 213 p. 147 illus., 122 illus. in color., 1 Hardback
  • Ilmumisaeg: 15-Apr-2016
  • Kirjastus: Springer International Publishing AG
  • ISBN-10: 3319316516
  • ISBN-13: 9783319316512
Teised raamatud teemal:
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs).  Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Steep
Slope Devices and TFETs.- Tunnel-FET
Fabrication and Characterization.- Compact Models of TFETs.- Challenges and
Designs of TFET for Digital
Applications.- Atomistic Simulations of Tunneling FETs.- Quantum Transport
Simulation of III-V TFETs with Reduced-Order k ·p Method.- Carbon Nanotube
TFETs: Structure
Optimization with Numerical Simulation.