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Ultra-Low Input Power Conversion Circuits based on TFETs [Kõva köide]

(Universitat Politècnica de Catalunya, Spain), (Universitat Politècnica de Catalunya, Spain), (Universidade Nova de Lisboa, Portugal)
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Ultra-Low Input Power Conversion Circuits based on TFETsSuurem pilt
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Püsilink: https://www.kriso.ee/db/9788793609761.html
The increasing demand in electronic portability imposes low power consumption as a key metric to analog and digital circuit design. Tunnel FET (TFET) devices have been explored mostly in digital circuits, showing promising results for ultra-low power and energy efficient circuit applications. The TFET presents a low inverse sub-threshold slope (SS) that allows a low leakage energy consumption, desirable in many digital circuits, especially memories.

In this book, the TFET is explored as an alternative technology also for ultra-low power and voltage conversion and management circuits, suitable for weak energy harvesting (EH) sources. The TFET distinct electrical characteristics under reverse bias conditions require changes in conventional circuit topologies. In this book, ultra-low input power conversion circuits based on TFETs are designed and analyzed, evaluating their performance as rectifiers, charge pumps and power management circuits (PMC) for RF and DC EH sources.
Preface xi
Acknowledgements iii
List of Figures
xv
List of Tables
xxiii
1 Introduction
1(14)
1.1 The Technology Scaling Roadmap so far
1(2)
1.2 New Solutions for Future Technology Nodes
3(3)
1.3 Energy Harvesting in a More than Moore era
6(1)
1.4 Tunnel FETs as a Key Technology for Energy Harvesting
7(2)
1.5 Topics Addressed in This Book
9(2)
1.6 Book Structure
11(4)
References
12(3)
2 Tunnel FET: State of the Art
15(22)
2.1 The Tunneling Phenomenon
15(1)
2.2 Band-to-Band Tunneling (BTBT) Current
16(4)
2.3 From Tunnel Diode to Gated p-i-n Structure
20(17)
2.3.1 First Observations of Tunneling in Gated Structures
20(2)
2.3.2 Structural Improvements for Boosted Performance
22(2)
2.3.3 Tunnel FET Evolution over the Past Decades
24(5)
2.3.4 Directions for Further Improvements in Tunneling Devices
29(3)
2.3.5 A Brief Discussion of the Tunneling Device State of the Art
32(1)
References
32(5)
3 Tunnel FET: Physical Properties
37(20)
3.1 Thermionic Injection vs. BTBT
37(4)
3.2 Impact of Physical Properties in the TFET Performance
41(14)
3.2.1 Device Structure and Applied Model
42(2)
3.2.2 Dielectric Permittivity, EOT, and Body Thickness Impact
44(3)
3.2.3 Impact of Doping in Drain and Source Regions of Si-TFET
47(4)
3.2.4 Impact of Materials in a Double-gate TFET
51(1)
3.2.5 Impact of Doping in Drain and Source Regions for TFETs with Different Materials
52(3)
3.3
Chapter Summary
55(2)
References
56(1)
4 Tunnel FET: Electrical Properties
57(22)
4.1 Tunnel FET Models for SPICE Simulations
57(4)
4.1.1 Analytic TFET Model
57(3)
4.1.2 TFET Model Based on Lookup Tables
60(1)
4.2 Electrical Characteristics of TFETs
61(5)
4.2.1 Input Characteristics of TFETs
61(3)
4.2.2 Output Characteristics of TFETs
64(1)
4.2.3 Intrinsic Capacitance of TFETs
65(1)
4.3 TFETs in Digital Design
66(3)
4.4 TFETs in Analog Design
69(4)
4.5 TFETs' Circuit Layout Issues and Extra-parasitics
73(1)
4.6
Chapter Summary
74(5)
References
75(4)
5 Tunnel FET-based Charge Pumps
79(20)
5.1 Motivation
79(2)
5.2 Problems Associated with TFETs in Charge Pumps
81(3)
5.3 Circuit-level Solutions for Reverse-biased TFETs
84(2)
5.4 Proposed TFET-based Charge Pump
86(2)
5.5 Capacitance Optimization of Charge-pump Stage
88(2)
5.6 Charge Pumps' Performance Comparison
90(5)
5.7
Chapter Summary
95(4)
References
96(3)
6 Tunnel FET-based Rectifiers
99(16)
6.1 Motivation
99(1)
6.2 State-of-the-art TFET-based Rectifier
100(3)
6.3 Advantages of Tunnel FETs in Rectifiers
103(2)
6.4 Drawbacks of Tunnel FETs in Rectifiers
105(1)
6.5 Proposed Tunnel FET-based Rectifier
106(2)
6.6 Optimization of the Proposed Rectifier
108(3)
6.7 Performance Comparison of Rectifiers
111(1)
6.8
Chapter Summary
112(3)
References
113(2)
7 TFET-based Power-management Circuit for RF Energy Harvesting
115(24)
7.1 Motivation
115(1)
7.2 Challenges in RF Power Transport
116(4)
7.3 Proposed TFET-based PMC
120(11)
7.3.1 Startup Circuit
121(2)
7.3.2 Boost Circuit
123(2)
7.3.2.1 Challenges in TFET-based boost-converter design
125(2)
7.3.2.2 Advantages of TFETs in PMC and boost converters
127(1)
7.3.3 Controller Circuit
128(3)
7.4 Simulation Results
131(4)
7.5
Chapter Summary
135(4)
References
136(3)
8 TFET-based Power-management Circuit for Nanowatt DC Energy-Harvesting Sources
139(20)
8.1 Motivation
139(1)
8.2 Proposed TFET-based PMC for Ultra-low-power DC Sources
140(10)
8.2.1 Startup Circuit
140(4)
8.2.2 Boost Circuit
144(1)
8.2.3 Controller Circuit
145(5)
8.3 Simulated Results
150(6)
8.4 Impact of TFET-based Circuit Layout and Parasitics
156(1)
8.5
Chapter Summary
157(2)
References
157(2)
9 Final Conclusions
159(4)
9.1 Summary of Book Contributions
161(1)
9.2 Future Work
162(1)
Glossary 163(4)
Index 167(4)
About the Authors 171
David Cavalheiro, Francesc Moll, Stanimir Valtchev