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Wide Bandgap Semiconductor Electronics And Devices [Kõva köide]

Edited by (Univ Of Buffalo, Usa), Edited by (The Ohio State Univ, Usa), Edited by (Univ Of California, Santa Barbara, Usa)
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'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2Oand diamond.
Preface v
Substrate Effects in GaN-on-Silicon RE Device Technology
1(30)
H. Chandrasekar
Gallium Oxide Field Effect Transistors -- Establishing New Frontiers of Power Switching and Radiation-Hard Electronics
31(20)
M. H. Wong
M. Higashiwaki
High Efficiency AIN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
51(12)
R. Kabouche
R. Pecheux
K. Harrouche
E. Okada
F. Medjdoub
J. Derluyn
S. Degroote
M. Germain
F. Gucmann
C. Middleton
J. W. Pomeroy
M. Kuball
Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics
63(16)
M. N. Hasan
E. Swinnich
J.-H. Seo
Application of Atom Probe Tomography for Advancing GaN Based Technology
79(18)
O. G. Licata
B. Mazumder
P-(Al,Ga)203 for High Power Applications -- A Review on Material Growth and Device Fabrication
97(30)
Z. Man
K. Khan
E. Ahmadi
Opportunities and Challenges in MOCVD of P-Ga203 for Power Electronic Devices
127(18)
M. A. Mastro
J. K. Hite
C. R. Eddy Jr.
M. J. Tadjer
S. J. Pearton
F. Ren
J. Kim
Theory of High Field Transport in |3-Ga203
145(18)
K. Ghosh
U. Singisetti
Ultra-Wide Bandgap AlxGai-xN Channel Transistors
163(14)
T. Razzak
S. Rajan
A. Armstrong
On the Progress Made in GaN Vertical Device Technology
177(16)
D. Ji
S. Chowdhuty
Modeling and Simulation of Quasi-Ballistic Ill-Nitride Transistors for RF and Digital Applications
193(40)
K. Li
S. Rakheja
Recent Progress in Ill-Nitride Tunnel Junction-Based Optoelectronics
233
Z. Jamal-Eddine
Y. Zhang
S. Rajan