This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEM...Loe edasi...
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents bas...Loe edasi...
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents bas...Loe edasi...
This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEM...Loe edasi...
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material sys...Loe edasi...
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material sys...Loe edasi...
(Ilmumisaeg: 01-Dec-1991, Hardback, Kirjastus: Artech House Publishers, ISBN-13: 9780890064016)
A comprehensive look at the two most mature devices of a new generation of heterojunction transistors the high electron mobility transistor (HEMT) and the heterojunction bipolar transistor (HBT). Covers such fundamental issues as device physics, anal...Loe edasi...
