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Extreme Statistics in Nanoscale Memory Design 2010 ed. [Kõva köide]

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  • Formaat: Hardback, 246 pages, kõrgus x laius: 235x155 mm, kaal: 1190 g, X, 246 p., 1 Hardback
  • Sari: Integrated Circuits and Systems
  • Ilmumisaeg: 17-Sep-2010
  • Kirjastus: Springer-Verlag New York Inc.
  • ISBN-10: 1441966056
  • ISBN-13: 9781441966056
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  • Formaat: Hardback, 246 pages, kõrgus x laius: 235x155 mm, kaal: 1190 g, X, 246 p., 1 Hardback
  • Sari: Integrated Circuits and Systems
  • Ilmumisaeg: 17-Sep-2010
  • Kirjastus: Springer-Verlag New York Inc.
  • ISBN-10: 1441966056
  • ISBN-13: 9781441966056
Teised raamatud teemal:
Knowledge exists: you only have to ?nd it VLSI design has come to an important in ection point with the appearance of large manufacturing variations as semiconductor technology has moved to 45 nm feature sizes and below. If we ignore the random variations in the manufacturing process, simulation-based design essentially becomes useless, since its predictions will be far from the reality of manufactured ICs. On the other hand, using design margins based on some traditional notion of worst-case scenarios can force us to sacri ce too much in terms of power consumption or manufacturing cost, to the extent of making the design goals even infeasible. We absolutely need to explicitly account for the statistics of this random variability, to have design margins that are accurate so that we can ?nd the optimum balance between yield loss and design cost. This discontinuity in design processes has led many researchers to develop effective methods of statistical design, where the designer can simulate not just the behavior of the nominal design, but the expected statistics of the behavior in manufactured ICs. Memory circuits tend to be the hardest hit by the problem of these random variations because of their high replication count on any single chip, which demands a very high statistical quality from the product. Requirements of 56s (0.
1 Introduction
1(8)
Amith Singhee
2 Extreme Statistics in Memories
9(8)
Amith Singhee
3 Statistical Nano CMOS Variability and Its Impact on SRAM
17(34)
Asen Asenov
4 Importance Sampling-Based Estimation: Applications to Memory Design
51(46)
Rouwaida Kanj
Rajiv Joshi
5 Direct SRAM Operation Margin Computation with Random Skews of Devices Characteristics
97(40)
Robert C. Wong
6 Yield Estimation by Computing Probabilistic Hypervolumes
137(42)
Chenjie Gu
Jaijeet Roychowdhury
7 Most Probable Point-Based Methods
179(24)
Xiaoping Du
Wei Chen
Yu Wang
8 Extreme Value Theory: Application to Memory Statistics
203(38)
Robert C. Aitken
Amith Singhee
Rob A. Rutenbar
Index 241