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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices Softcover reprint of the original 1st ed. 1998 [Pehme köide]

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  • Formaat: Paperback / softback, 507 pages, kõrgus x laius: 240x160 mm, kaal: 1590 g, 114 Illustrations, black and white; XI, 507 p. 114 illus., 1 Paperback / softback
  • Sari: NATO Science Partnership Subseries: 3 47
  • Ilmumisaeg: 31-Mar-1998
  • Kirjastus: Springer
  • ISBN-10: 0792350081
  • ISBN-13: 9780792350088
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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices Softcover reprint of the original 1st ed. 1998Suurem pilt
  • Formaat: Paperback / softback, 507 pages, kõrgus x laius: 240x160 mm, kaal: 1590 g, 114 Illustrations, black and white; XI, 507 p. 114 illus., 1 Paperback / softback
  • Sari: NATO Science Partnership Subseries: 3 47
  • Ilmumisaeg: 31-Mar-1998
  • Kirjastus: Springer
  • ISBN-10: 0792350081
  • ISBN-13: 9780792350088
Teised raamatud teemal:
Püsilink: https://www.kriso.ee/db/9780792350088.html
Märksõnad:
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997

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Preface. Introduction.
1. Recent Advances in Experimental Studies of SiO2 Films on Si.
2. Theory of the SiO2/Si and SiOxNy/Si Systems.
3. Growth Mechanism, Processing, and Analysis of (Oxy)nitridation.
4. Initial Oxidation and Surface Science Issues.
5. Electrical Properties and Microscopic Models of Defects.
6. Hydrogen/Deuterium Issues.
7. New Substrates (SiC, SiGe) and SOI Technologies. Appendix. Authors Index. List of Workshop Participants.