Papers from an August 1997 workshop report on recent progress on the atomic-scale physical, chemical, and electrical understanding of ultrathin dielectric films on silicon-based materials, and identify directions for future basic research in the field. Material is divided into sections on experimental studies of SiO2 films on Si, the theory of SiO2/Si and SiOxNy/Si systems, growth mechanism and analysis of (oxy)nitridation, initial oxidation and surface science issues, microscopic models of defects, new substrates and SOI technologies, and hydrogen/deuterium issues. No index. Annotation c. by Book News, Inc., Portland, Or.
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
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