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Fundamentals of Microelectronics 3rd edition [Pehme köide]

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(AT&T Bell Laboratories)
  • Formaat: Paperback / softback, 960 pages, kõrgus x laius x paksus: 254x203x33 mm, kaal: 1633 g
  • Ilmumisaeg: 24-Jun-2021
  • Kirjastus: John Wiley & Sons Inc
  • ISBN-10: 1119695147
  • ISBN-13: 9781119695141
Teised raamatud teemal:
Fundamentals of Microelectronics 3rd editionSuurem pilt
  • Formaat: Paperback / softback, 960 pages, kõrgus x laius x paksus: 254x203x33 mm, kaal: 1633 g
  • Ilmumisaeg: 24-Jun-2021
  • Kirjastus: John Wiley & Sons Inc
  • ISBN-10: 1119695147
  • ISBN-13: 9781119695141
Teised raamatud teemal:
Püsilink: https://www.kriso.ee/db/9781119695141.html
Märksõnad:
"One salient feature of this book is its synthesis- or design-oriented approach. Rather than pulling a circuit out of a bag and trying to analyze it, I set the stage by stating a problem that we face in real life (e.g., how to design a cellphone charger). I then attempt to arrive at a solution using basic principles, thus presenting both failures and successes in the process.When we do arrive at the final solution, the student has seen the exact role of each device as well as the logical thought sequencebehind synthesizing the circuit. Another essential component of this book is "analysis by inspection." This "mentality" is created in two steps. First, the behavior of elementary building blocks is formulated using a "verbal" description of each analytical result (e.g., "looking into the emitter, we see 1/gm."). Second, larger circuits are decomposed and "mapped" to the elementary blocks to avoid the need for writing KVLs and KCLs. This approach both imparts a great deal of intuition and simplifies the analysis of large circuits"--

Fundamentals of Microelectronics, 3rd Edition, is a comprehensive introduction to the design and analysis of electrical circuits, enabling students to develop the practical skills and engineering intuition necessary to succeed in their future careers. Through an innovative “analysis by inspection” framework, students learn to deconstruct complex problems into familiar components and reach solutions using basic principles. A step-by-step synthesis approach to microelectronics demonstrates the role of each device in a circuit while helping students build “design-oriented” mindsets.

The revised third edition covers basic semiconductor physics, diode models and circuits, bipolar transistors and amplifiers, oscillators, frequency response, and more. In-depth chapters feature illustrative examples and numerous problems of varying levels of difficulty, including design problems that challenge students to select the bias and component values to satisfy particular requirements. The text contains a wealth of pedagogical tools, such as application sidebars, chapter summaries, self-tests with answers, and Multisim and SPICE software simulation problems. Now available in enhanced ePub format, Fundamentals of Microelectronics is ideal for single- and two-semester courses in the subject.

1 Introduction To Microelectronics
1(20)
1.1 Electronics Versus Microelectronics
1(1)
1.2 Examples of Electronic Systems
2(6)
1.2.1 Cellular Telephone
2(3)
1.2.2 Digital Camera
5(2)
1.2.3 Analog Versus Digital
7(1)
1.3 Basic Concepts
8(12)
1.3.1 Analog and Digital Signals
8(2)
1.3.2 Analog Circuits
10(1)
1.3.3 Digital Circuits
11(1)
1.3.4 Basic Circuit Theorems
12(8)
1.4
Chapter Summary
20(1)
2 Basic Physics Of Semiconductors
21(40)
2.1 Semiconductor Materials and Their Properties
22(13)
2.1.1 Charge Carriers in Solids
22(3)
2.1.2 Modification of Carrier Densities
25(3)
2.1.3 Transport of Carriers
28(7)
2.2 Pn Junction
35(19)
2.2.1 Pn Junction in Equilibrium
36(5)
2.2.2 Pn Junction Under Reverse Bias
41(5)
2.2.3 Pn Junction Under Forward Bias
46(3)
2.2.4 I/V Characteristics
49(5)
2.3 Reverse Breakdown
54(2)
2.3.1 Zener Breakdown
55(1)
2.3.2 Avalanche Breakdown
55(1)
2.4
Chapter Summary
56(5)
Problems
57(3)
Spice Problems
60(1)
3 Diode Models And Circuits
61(63)
3.1 Ideal Diode
62(10)
3.1.1 Initial Thoughts
62(1)
3.1.2 Ideal Diode
63(4)
3.1.3 Application Examples
67(5)
3.2 Pn Junction as a Diode
72(2)
3.3 Additional Examples
74(6)
3.4 Large-Signal and Small-Signal Operation
80(9)
3.5 Applications of Diodes
89(25)
3.5.1 Half-Wave and Full-Wave Rectifiers
89(11)
3.5.2 Voltage Regulation
100(3)
3.5.3 Limiting Circuits
103(3)
3.5.4 Voltage Doublers
106(6)
3.5.5 Diodes as Level Shifters and Switches
112(2)
3.6
Chapter Summary
114(10)
Problems
115(7)
Spice Problems
122(2)
4 Physics Of Bipolar Transistors
124(48)
4.1 General Considerations
125(1)
4.2 Structure of Bipolar Transistor
126(1)
4.3 Operation of Bipolar Transistor in Active Mode
127(8)
4.3.1 Collector Current
129(4)
4.3.2 Base and Emitter Currents
133(2)
4.4 Bipolar Transistor Models and Characteristics
135(17)
4.4.1 Large-Signal Model
135(2)
4.4.2 I/V Characteristics
137(2)
4.4.3 Concept of Transconductance
139(2)
4.4.4 Small-Signal Model
141(4)
4.4.5 Early Effect
145(7)
4.5 Operation of Bipolar Transistor in Saturation Mode
152(3)
4.6 The PNP Transistor
155(7)
4.6.1 Structure and Operation
155(1)
4.6.2 Large-Signal Model
156(3)
4.6.3 Small-Signal Model
159(3)
4.7
Chapter Summary
162(10)
Problems
163(7)
Spice Problems
170(2)
5 Bipolar Amplifiers
172(97)
5.1 General Considerations
173(7)
5.1.1 Input and Output Impedances
173(5)
5.1.2 Biasing
178(1)
5.1.3 DC and Small-Signal Analysis
178(2)
5.2 Operating Point Analysis and Design
180(16)
5.2.1 Simple Biasing
181(2)
5.2.2 Resistive Divider Biasing
183(3)
5.2.3 Biasing with Emitter Degeneration
186(4)
5.2.4 Self-Biased Stage
190(2)
5.2.5 Biasing of PNP Transistors
192(4)
5.3 Bipolar Amplifier Topologies
196(50)
5.3.1 Common-Emitter Topology
197(27)
5.3.2 Common-Base Topology
224(14)
5.3.3 Emitter Follower
238(8)
5.4 Summary and Additional Examples
246(7)
5.5
Chapter Summary
253(16)
Problems
253(14)
Spice Problems
267(2)
6 Physics Of Mos Transistors
269(40)
6.1 Structure of MOSFET
270(2)
6.2 Operation of MOSFET
272(21)
6.2.1 Qualitative Analysis
272(7)
6.2.2 Derivation of I-V Characteristics
279(9)
6.2.3 Channel-Length Modulation
288(2)
6.2.4 MOS Transconductance
290(2)
6.2.5 Velocity Saturation
292(1)
6.2.6 Other Second-Order Effects
292(1)
6.3 MOS Device Models
293(3)
6.3.1 Large-Signal Model
293(2)
6.3.2 Small-Signal Model
295(1)
6.4 PMOS Transistor
296(3)
6.5 CMOS Technology
299(1)
6.6 Comparison of Bipolar and MOS Devices
300(1)
6.7
Chapter Summary
300(9)
Problems
301(7)
Spice Problems
308(1)
7 Cmos Amplifiers
309(46)
7.1 General Considerations
310(5)
7.1.1 MOS Amplifier Topologies
310(1)
7.1.2 Biasing
310(3)
7.1.3 Realization of Current Sources
313(2)
7.2 Common-Source Stage
315(10)
7.2.1 CS Core
315(3)
7.2.2 CS Stage with Current-Source Load
318(1)
7.2.3 CS Stage with Diode-Connected Load
319(1)
7.2.4 CS Stage with Degeneration
320(3)
7.2.5 CS Core with Biasing
323(2)
7.3 Common-Gate Stage
325(6)
7.3.1 CG Stage with Biasing
329(2)
7.4 Source Follower
331(5)
7.4.1 Source Follower Core
331(2)
7.4.2 Source Follower with Biasing
333(3)
7.5 Summary and Additional Examples
336(4)
7.6
Chapter Summary
340(15)
Problems
341(12)
Spice Problems
353(2)
8 Operational Amplifier As A Black Box
355(43)
8.1 General Considerations
356(2)
8.2 Op-Amp-Based Circuits
358(15)
8.2.1 Noninverting Amplifier
358(2)
8.2.2 Inverting Amplifier
360(3)
8.2.3 Integrator and Differentiator
363(8)
8.2.4 Voltage Adder
371(2)
8.3 Nonlinear Functions
373(3)
8.3.1 Precision Rectifier
373(1)
8.3.2 Logarithmic Amplifier
374(1)
8.3.3 Square-Root Amplifier
375(1)
8.4 Op Amp Nonidealities
376(12)
8.4.1 DC Offsets
376(3)
8.4.2 Input Bias Current
379(3)
8.4.3 Speed Limitations
382(5)
8.4.4 Finite Input and Output Impedances
387(1)
8.5 Design Examples
388(2)
8.6
Chapter Summary
390(8)
Problems
391(6)
Spice Problems
397(1)
9 Cascode Stages And Current Mirrors
398(45)
9.1 Cascode Stage
399(15)
9.1.1 Cascode as a Current Source
399(6)
9.1.2 Cascode as an Amplifier
405(9)
9.2 Current Mirrors
414(15)
9.2.1 Initial Thoughts
414(2)
9.2.2 Bipolar Current Mirror
416(9)
9.2.3 MOS Current Mirror
425(4)
9.3
Chapter Summary
429(14)
Problems
430(11)
Spice Problems
441(2)
10 Differential Amplifiers
443(68)
10.1 General Considerations
444(8)
10.1.1 Initial Thoughts
444(2)
10.1.2 Differential Signals
446(3)
10.1.3 Differential Pair
449(3)
10.2 Bipolar Differential Pair
452(17)
10.2.1 Qualitative Analysis
452(6)
10.2.2 Large-Signal Analysis
458(5)
10.2.3 Small-Signal Analysis
463(6)
10.3 MOS Differential Pair
469(12)
10.3.1 Qualitative Analysis
469(4)
10.3.2 Large-Signal Analysis
473(5)
10.3.3 Small-Signal Analysis
478(3)
10.4 Cascode Differential Amplifiers
481(4)
10.5 Common-Mode Rejection
485(4)
10.6 Differential Pair with Active Load
489(7)
10.6.1 Qualitative Analysis
490(2)
10.6.2 Quantitative Analysis
492(4)
10.7
Chapter Summary
496(15)
Problems
497(12)
Spice Problems
509(2)
11 Frequency Response
511(64)
11.1 Fundamental Concepts
512(17)
11.1.1 General Considerations
512(3)
11.1.2 Relationship Between Transfer Function and Frequency Response
515(3)
11.1.3 Bode's Rules
518(1)
11.1.4 Association of Poles with Nodes
519(2)
11.1.5 Miller's Theorem
521(4)
11.1.6 General Frequency Response
525(4)
11.2 High-Frequency Models of Transistors
529(5)
11.2.1 High-Frequency Model of Bipolar Transistor
529(2)
11.2.2 High-Frequency Model of MOSFET
531(1)
11.2.3 Transit Frequency
532(2)
11.3 Analysis Procedure
534(1)
11.4 Frequency Response of CE and CS Stages
535(9)
11.4.1 Low-Frequency Response
535(1)
11.4.2 High-Frequency Response
536(1)
11.4.3 Use of Miller's Theorem
537(2)
11.4.4 Direct Analysis
539(4)
11.4.5 Input Impedance
543(1)
11.5 Frequency Response of CB and CG Stages
544(3)
11.5.1 Low-Frequency Response
544(1)
11.5.2 High-Frequency Response
544(3)
11.6 Frequency Response of Followers
547(6)
11.6.1 Input and Output Impedances
550(3)
11.7 Frequency Response of Cascode Stage
553(5)
11.7.1 Input and Output Impedances
557(1)
11.8 Frequency Response of Differential Pairs
558(3)
11.8.1 Common-Mode Frequency Response
559(2)
11.9 Additional Examples
561(3)
11.10
Chapter Summary
564(11)
Problems
565(8)
Spice Problems
573(2)
12 Feedback
575(81)
12.1 General Considerations
577(5)
12.1.1 Loop Gain
579(3)
12.2 Properties of Negative Feedback
582(9)
12.2.1 Gain Desensitization
582(2)
12.2.2 Bandwidth Extension
584(2)
12.2.3 Modification of I/O Impedances
586(3)
12.2.4 Linearity Improvement
589(2)
12.3 Types of Amplifiers
591(4)
12.3.1 Simple Amplifier Models
591(2)
12.3.2 Examples of Amplifier Types
593(2)
12.4 Sense and Return Techniques
595(3)
12.5 Polarity of Feedback
598(2)
12.6 Feedback Topologies
600(16)
12.6.1 Voltage--Voltage Feedback
600(5)
12.6.2 Voltage--Current Feedback
605(3)
12.6.3 Current--Voltage Feedback
608(5)
12.6.4 Current--Current Feedback
613(3)
12.7 Effect of Nonideal I/O Impedances
616(12)
12.7.1 Inclusion of I/O Effects
617(11)
12.8 Stability in Feedback Systems
628(14)
12.8.1 Review of Bode's Rules
629(1)
12.8.2 Problem of Instability
630(3)
12.8.3 Stability Condition
633(3)
12.8.4 Phase Margin
636(2)
12.8.5 Frequency Compensation
638(3)
12.8.6 Miller Compensation
641(1)
12.9
Chapter Summary
642(14)
Problems
643(11)
Spice Problems
654(2)
13 Oscillators
656(34)
13.1 General Considerations
656(3)
13.2 Ring Oscillators
659(5)
13.3 LC Oscillators
664(8)
13.3.1 Parallel LC Tanks
664(3)
13.3.2 Cross-Coupled Oscillator
667(3)
13.3.3 Colpitts Oscillator
670(2)
13.4 Phase Shift Oscillator
672(3)
13.5 Wien-Bridge Oscillator
675(2)
13.6 Crystal Oscillators
677(6)
13.6.1 Crystal Model
678(1)
13.6.2 Negative-Resistance Circuit
679(2)
13.6.3 Crystal Oscillator Implementation
681(2)
13.7
Chapter Summary
683(7)
Problems
684(4)
Spice Problems
688(2)
14 Output Stages And Power Amplifiers
690(35)
14.1 General Considerations
690(1)
14.2 Emitter Follower as Power Amplifier
691(3)
14.3 Push-Pull Stage
694(3)
14.4 Improved Push-Pull Stage
697(7)
14.4.1 Reduction of Crossover Distortion
697(4)
14.4.2 Addition of CE Stage
701(3)
14.5 Large-Signal Considerations
704(4)
14.5.1 Biasing Issues
704(1)
14.5.2 Omission of PNP Power Transistor
705(3)
14.5.3 High-Fidelity Design
708(1)
14.6 Short-Circuit Protection
708(1)
14.7 Heat Dissipation
709(5)
14.7.1 Emitter Follower Power Rating
710(1)
14.7.2 Push-Pull Stage Power Rating
711(2)
14.7.3 Thermal Runaway
713(1)
14.8 Efficiency
714(2)
14.8.1 Efficiency of Emitter Follower
714(1)
14.8.2 Efficiency of Push-Pull Stage
715(1)
14.9 Power Amplifier Classes
716(1)
14.10
Chapter Summary
717(8)
Problems
718(5)
Spice Problems
723(2)
15 Analog Filters
725(53)
15.1 General Considerations
725(10)
15.1.1 Filter Characteristics
726(1)
15.1.2 Classification of Filters
727(3)
15.1.3 Filter Transfer Function
730(4)
15.1.4 Problem of Sensitivity
734(1)
15.2 First-Order Filters
735(3)
15.3 Second-Order Filters
738(9)
15.3.1 Special Cases
738(4)
15.3.2 RLC Realizations
742(5)
15.4 Active Filters
747(14)
15.4.1 Sallen and Key Filter
747(6)
15.4.2 Integrator-Based Biquads
753(3)
15.4.3 Biquads Using Simulated Inductors
756(5)
15.5 Approximation of Filter Response
761(10)
15.5.1 Butterworth Response
762(4)
15.5.2 Chebyshev Response
766(5)
15.6
Chapter Summary
771(7)
Problems
772(4)
Spice Problems
776(2)
16 Digital Cmos Circuits
778(41)
16.1 General Considerations
778(13)
16.1.1 Static Characterization of Gates
779(7)
16.1.2 Dynamic Characterization of Gates
786(3)
16.1.3 Power-Speed Trade-Off
789(2)
16.2 CMOS Inverter
791(17)
16.2.1 Initial Thoughts
791(2)
16.2.2 Voltage Transfer Characteristic
793(6)
16.2.3 Dynamic Characteristics
799(5)
16.2.4 Power Dissipation
804(4)
16.3 CMOS NOR and NAND Gates
808(4)
16.3.1 NOR Gate
808(3)
16.3.2 NAND Gate
811(1)
16.4
Chapter Summary
812(7)
Problems
813(5)
Spice Problems
818(1)
17 Cmos Amplifiers
819(1)
17.1 General Considerations
819(1)
17.1.1 Input and Output Impedances
820(4)
17.1.2 Biasing
824(1)
17.1.3 DC and Small-Signal Analysis
825(1)
17.2 Operating Point Analysis and Design
826(10)
17.2.1 Simple Biasing
828(2)
17.2.2 Biasing with Source Degeneration
830(3)
17.2.3 Self-Biased Stage
833(1)
17.2.4 Biasing of PMOS Transistors
834(1)
17.2.5 Realization of Current Sources
835(1)
17.3 CMOS Amplifier Topologies
836(1)
17.4 Common-Source Topology
837(37)
17.4.1 CS Stage with Current-Source Load
842(1)
17.4.2 CS Stage with Diode-Connected Load
843(1)
17.4.3 CS Stage with Source Degeneration
844(12)
17.4.4 Common-Gate Topology
856(11)
17.4.5 Source Follower
867(7)
17.5 Additional Examples
874(4)
17.6
Chapter Summary
878(1)
Problems
879(12)
Spice Problems
891
Appendix A Introduction To Spice 1(1)
Index 1
Behzad Razavi received the B.Sc. degree in electrical engineering from Sharif University of Technology in 1985, and the M.Sc. and Ph.D. degrees in electrical engineering from Stanford University in 1988 and 1992, respectively. He was with AT&T Bell Laboratories and subsequently Hewlett-Packard Laboratories until 1996. He was also an Adjunct Professor at Princeton University from 1992 to 1994. Since September 1996, Dr. Razavi has been an Associate Professor, and subsequently Professor, of the Electrical Engineering Department at UCLA. He was the Chair of the Integrated Circuits and Systems field of study, and served as Chair of the Department's Annual Research Review for two consecutive years. Prof. Razavi is a member of the Technical Program Committees of Symposium on VLSI Circuits and the International Solid-State Circuits Conference (ISSCC), in which he is the chair of the Analog Subcommittee. He has served as Guest Editor and Associate Editor of the IEEE Journal of Solid-State Circuits, IEEE Transactions on Circuits and Systems, and International Journal of High Speed Electronics. Professor Razavi's current research includes wireless transceivers, frequency synthesizers, phase-locking and clock recovery for high-speed data communications, and data converters.