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Heterojunction Bipolar Transistors for Circuit Design: Microwave Modeling and Parameter Extraction [Kõva köide]

  • Formaat: Hardback, 259 pages, kõrgus x laius x paksus: 252x175x19 mm, kaal: 581 g
  • Ilmumisaeg: 17-Jul-2015
  • Kirjastus: John Wiley & Sons Inc
  • ISBN-10: 1118921526
  • ISBN-13: 9781118921524
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Heterojunction Bipolar Transistors for Circuit Design: Microwave Modeling and Parameter ExtractionSuurem pilt
  • Formaat: Hardback, 259 pages, kõrgus x laius x paksus: 252x175x19 mm, kaal: 581 g
  • Ilmumisaeg: 17-Jul-2015
  • Kirjastus: John Wiley & Sons Inc
  • ISBN-10: 1118921526
  • ISBN-13: 9781118921524
Teised raamatud teemal:
Püsilink: https://www.kriso.ee/db/9781118921524.html
Märksõnad:
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors





Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
About the Author ix
Preface xi
Acknowledgments xiii
Nomenclature xv
1 Introduction 1(8)
1.1 Overview of Heterojunction Bipolar Transistors
1(4)
1.2 Modeling and Measurement for HBT
5(2)
1.3 Organization of This Book
7(1)
References
7(2)
2 Basic Concept of Microwave Device Modeling 9(42)
2.1 Signal Parameters
10(11)
2.1.1 Low-Frequency Parameters
11(5)
2.1.2 S-Parameters
16(5)
2.2 Representation of Noisy Two-Port Network
21(4)
2.2.1 Noise Matrix
21(3)
2.2.2 Noise Parameters
24(1)
2.3 Basic Circuit Elements
25(12)
2.3.1 Resistance
25(1)
2.3.2 Capacitance
26(3)
2.3.3 Inductance
29(2)
2.3.4 Controlled Sources
31(3)
2.3.5 Ideal Transmission Line
34(3)
2.4 and T-Type Networks
37(6)
2.4.1 T-Type Network
37(2)
2.4.2 π-Type Network
39(1)
2.4.3 Relationship between π- and T-Type Networks
40(3)
2.5 Deembedding Method
43(3)
2.5.1 Parallel Deembedding
43(1)
2.5.2 Series Deembedding
44(1)
2.5.3 Cascading Deembedding
45(1)
2.6 Basic Methods of Parameter Extraction
46(4)
2.6.1 Determination of Capacitance
46(1)
2.6.2 Determination of Inductance
47(2)
2.6.3 Determination of Resistance
49(1)
2.7 Summary
50(1)
References
50(1)
3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor 51(44)
3.1 PN Junction
52(3)
3.2 PN Junction Diode
55(12)
3.2.1 Basic Concept
55(4)
3.2.2 Equivalent Circuit Model
59(6)
3.2.3 Determination of Model Parameters
65(2)
3.3 BJT Physical Operation
67(11)
3.3.1 Device Structure
68(2)
3.3.2 The Modes of Operation
70(5)
3.3.3 Base-Width Modulation
75(2)
3.3.4 High Injection and Current Crowding
77(1)
3.4 Equivalent Circuit Model
78(9)
3.4.1 E-M Model
78(5)
3.4.2 G-P Model
83(3)
3.4.3 Noise Model
86(1)
3.5 Microwave Performance
87(7)
3.5.1 Transition Frequency
88(2)
3.5.2 Common-Emitter Configuration
90(1)
3.5.3 Common-Base Configuration
91(1)
3.5.4 Common-Collector Configuration
92(1)
3.5.5 Summary and Comparisons
93(1)
3.6 Summary
94(1)
References
94(1)
4 Basic Principle of HBT 95(22)
4.1 Semiconductor Heterojunction
96(5)
4.2 HBT Device
101(14)
4.2.1 GaAs HBT
102(8)
4.2.2 InP HBT
110(5)
4.3 Summary
115(1)
References
115(2)
5 Small-Signal Modeling and Parameter Extraction of HBT 117(52)
5.1 Small-Signal Circuit Model
118(9)
5.1.1 Pad Structure
118(2)
5.1.2 T-Type Circuit Model
120(2)
5.1.3 π-Type Circuit Model
122(2)
5.1.4 Unilateral Power Gain
124(2)
5.1.5 fT and fmax
126(1)
5.2 HBT Device Structure
127(1)
5.3 Extraction Method of PAD Capacitances
128(4)
5.3.1 Open Test Structure Method
128(1)
5.3.2 Pinch-Off Method
129(3)
5.4 Extraction Method of Extrinsic Inductances
132(5)
5.4.1 Short Test Structure Method
132(2)
5.4.2 Open-Collector Method
134(3)
5.5 Extraction Method of Extrinsic Resistance
137(9)
5.5.1 Z Parameter Method
137(1)
5.5.2 Cold-HBT Method
138(5)
5.5.3 Open-Collector Method
143(3)
5.6 Extraction Method of Intrinsic Resistance
146(13)
5.6.1 Direct Extraction Method
146(8)
5.6.2 Hybrid Method
154(5)
5.7 Semianalysis Method
159(4)
5.8 Summary
163(3)
References
166(3)
6 Large-Signal Equivalent Circuit Modeling of HBT 169(38)
6.1 Linear and Nonlinear
170(7)
6.1.1 Definition
170(2)
6.1.2 Nonlinear Lumped Elements
172(5)
6.2 Large Signal and Small Signal
177(1)
6.3 Thermal Resistance
177(17)
6.3.1 Definition
179(4)
6.3.2 Equivalent Circuit Model
183(4)
6.3.3 Determination of Thermal Resistance
187(7)
6.4 Nonlinear HBT Modeling
194(10)
6.4.1 VBIC Model
194(3)
6.4.2 Agilent Model
197(5)
6.4.3 Macromodeling Method
202(2)
6.5 Summary
204(1)
References
204(3)
7 Microwave Noise Modeling and Parameter Extraction Technique for HBTs 207(38)
7.1 Noise Equivalent Circuit Model
208(2)
7.2 Derivation of Noise Parameters
210(9)
7.3 Noise Parameter Extraction Methods
219(11)
7.3.1 Tuner-Based Extraction Method
220(2)
7.3.2 Noise Parameters Based on Noise Figure Measurement
222(8)
7.4 Common Base, Emitter, and Collector Configurations
230(13)
7.4.1 Signal Parameter Relationships
231(5)
7.4.2 Noise Parameter Relationships
236(7)
7.5 Summary
243(1)
References
243(2)
8 SiGe HBT Modeling and Parameter Extraction 245(12)
8.1 Introduction
245(1)
8.2 Small-Signal Model
246(5)
8.3 Large-Signal Model
251(4)
8.3.1 HICUM
251(2)
8.3.2 MEXTRAM Equivalent Circuit Model
253(2)
8.4 Summary
255(1)
References
255(2)
Index 257
Jianjun Gao, Professor, School of information Science and Technology, East China Normal University, Shanghai, P.R.China Jianjun Gao received his Ph.D. from Tsinghua University, in 1999. In 2003, he joined the Institute for High-Frequency and Semiconductor System Technologies, Berlin University of Technology, Germany, as a research associate working on the InP HBT modeling and circuit design for high speed optical communication. In 2004, he joined the Electronics Engineering Department, Carleton University, Canada, as Post-doctoral Fellow working on the semiconductor neural network modeling technique. Since 2007, he has been at East China Normal University, Shanghai. His main areas of research are characterization, modeling and wafer measurement of microwave semiconductor devices, optoelectronics devices and high-speed integrated circuits for radio frequency and optical communication.