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xii | |
Preface |
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xiii | |
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Epitaxial Growth of Semiconductors |
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1 | (55) |
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1 | (2) |
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Epitaxial Growth Techniques |
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3 | (5) |
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3 | (3) |
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6 | (1) |
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Molecular-beam Epitaxy with Heteroatomic Precursors |
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7 | (1) |
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8 | (2) |
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In Situ Observation of Growth Kinetics and Surface Morphology |
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10 | (6) |
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Reflection High-energy Electron Diffraction |
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11 | (1) |
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Scanning Tunnelling Microscopy |
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12 | (1) |
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13 | (3) |
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Atomistic Processes during Homoepitaxy |
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16 | (7) |
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Growth Kinetics on Vicinal GaAs(001) |
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16 | (3) |
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Anisotropic Growth and Surface Reconstructions |
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19 | (1) |
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19 | (2) |
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21 | (2) |
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Models of Homoepitaxial Kinetics |
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23 | (6) |
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The Theory of Burton, Cabrera and Frank |
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23 | (1) |
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Homogeneous Rate Equations |
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24 | (3) |
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Multilayer Growth on Singular Surfaces |
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27 | (2) |
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Mechanisms of Heteroepitaxial Growth |
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29 | (3) |
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Kinetics and Equilibrium with Misfit Strain |
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29 | (1) |
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The Frenkel-Kontorova Model |
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30 | (2) |
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Direct Growth of Quantum Heterostructures |
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32 | (10) |
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Quantum Wells and Quantum-well Superlattices |
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33 | (1) |
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Quantum Wire Superlattices |
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34 | (3) |
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Self-organized Quantum Dots |
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37 | (1) |
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Stranski-Krastanov Growth of InAs on GaAs(001) |
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38 | (2) |
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Controlled Positioning of Quantum Dots |
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40 | (1) |
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Ge `Hut' Clusters on Si(001) |
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40 | (2) |
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Growth on Patterned Substrates |
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42 | (4) |
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43 | (1) |
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Quantum Wires on `V-Grooved' Surfaces |
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43 | (1) |
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Stranski-Krastanov Growth on Patterned Substrates |
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44 | (2) |
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46 | (10) |
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47 | (4) |
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51 | (5) |
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Electrons in Quantum Semiconductor Structures: An Introduction |
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56 | (23) |
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56 | (1) |
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Ideal Low-dimensional Systems |
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57 | (4) |
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Free Electrons in Three Dimensions: A Review |
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57 | (1) |
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Ideal Two-dimensional Electron Gas |
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58 | (2) |
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Ideal Zero- and One-dimensional Electron Gases |
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60 | (1) |
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Quantum Wells, Wires, and Dots |
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61 | (1) |
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Real Electron Gases: Single Particle Models |
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61 | (18) |
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62 | (3) |
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65 | (1) |
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65 | (1) |
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65 | (1) |
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Finite Quantum Wells and Real Systems |
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66 | (4) |
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70 | (1) |
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Effective Mass for Parallel Transport |
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70 | (1) |
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Effective-mass Correction to Conduction-band Discontinuities |
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71 | (2) |
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73 | (1) |
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74 | (1) |
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75 | (1) |
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76 | (1) |
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77 | (2) |
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Electrons in Quantum Semiconductors Structures: More Advanced Systems and Methods |
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79 | (44) |
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79 | (1) |
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79 | (7) |
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The Hartree Approximation |
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79 | (2) |
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Beyond the Hartree Approximation |
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81 | (1) |
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The 2DEG at a Heterojunction Interface |
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82 | (3) |
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85 | (1) |
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Some Calculational Methods |
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86 | (11) |
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87 | (3) |
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90 | (3) |
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The Delta Well (Spike Doping) |
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93 | (2) |
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The Thomas-Fermi Approximation for Two-dimensional Systems |
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95 | (1) |
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The Thomas-Fermi Approximation for Heterojunctions and Delta Wells |
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96 | (1) |
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Quantum Wires and Quantum Dots |
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97 | (9) |
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Quantum Point Contacts and Quantized Conductance Steps |
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97 | (4) |
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A Closer Look at Quantum Dots |
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101 | (3) |
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The Coulomb Blockade and Single-electron Transistors |
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104 | (2) |
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106 | (17) |
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Superlattices and Multi-quantum-wells |
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107 | (2) |
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Miniband Properties: The WKB Approximation |
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109 | (3) |
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112 | (2) |
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114 | (1) |
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Compositional and Doping Superlattices |
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115 | (1) |
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Other Types of Superlattices |
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116 | (2) |
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118 | (4) |
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122 | (1) |
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Phonons in Low-dimensional Semiconductor Structures |
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123 | (26) |
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123 | (1) |
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Phonons in Heterostructures |
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124 | (11) |
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125 | (6) |
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Mesoscopic Phonon Phenomena |
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131 | (4) |
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Electron-Phonon Interactions in Heterostructures |
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135 | (9) |
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144 | (5) |
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145 | (2) |
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147 | (2) |
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Localization and Quantum Transport |
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149 | (31) |
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149 | (2) |
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151 | (4) |
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151 | (1) |
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The Anderson Transition and the Mobility Edge |
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151 | (3) |
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154 | (1) |
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Minimum Metallic Conductivity |
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154 | (1) |
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Scaling Theory and Quantum Interference |
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155 | (9) |
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155 | (2) |
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Experiments on Weak Localization |
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157 | (1) |
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158 | (1) |
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Negative Magnetoresistance |
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159 | (1) |
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Single Rings and Non-local Transport |
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160 | (3) |
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Spin-orbit Coupling, Magnetic Impurities, etc. |
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163 | (1) |
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Universal Conductance Fluctuations |
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163 | (1) |
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163 | (1) |
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164 | (1) |
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164 | (1) |
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164 | (1) |
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165 | (15) |
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165 | (3) |
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The Quantum Hall Effect Measurements |
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168 | (2) |
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170 | (2) |
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The Fractional Quantum Hall Effect |
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172 | (3) |
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175 | (3) |
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178 | (2) |
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Electronic States and Optical Properties of Quantum Wells |
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180 | (47) |
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180 | (3) |
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The Envelope Function Scheme |
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183 | (4) |
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187 | (5) |
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192 | (2) |
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Light Particle Band Non-parabolicity |
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192 | (1) |
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Valence Band Non-parabolicity |
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193 | (1) |
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194 | (3) |
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Effects of the Coulomb Interaction |
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197 | (4) |
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Excitons in Bulk Semiconductors |
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197 | (1) |
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Excitons in Quantum Wells |
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198 | (3) |
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201 | (4) |
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Optical Absorption in a Quantum Well |
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205 | (4) |
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209 | (6) |
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Measurement of Absorption |
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209 | (2) |
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Features of Optical Spectra |
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211 | (1) |
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211 | (1) |
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212 | (2) |
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214 | (1) |
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214 | (1) |
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215 | (7) |
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215 | (2) |
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217 | (1) |
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217 | (4) |
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221 | (1) |
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221 | (1) |
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222 | (5) |
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222 | (3) |
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225 | (2) |
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Non-Linear Optics in Low-dimensional Semiconductors |
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227 | (33) |
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227 | (2) |
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Non-dissipative NLO Processes |
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229 | (2) |
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231 | (1) |
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Potential Applications of NLO |
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232 | (2) |
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Serial Channel Applications |
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232 | (1) |
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Multi-channel Applications: Optical Computing |
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233 | (1) |
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Excitonic Optical Saturation in MQWs |
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234 | (5) |
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Excitonic Absorption at Low Intensities |
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234 | (3) |
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Saturation of Excitonic Peaks at High Intensities |
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237 | (2) |
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The Quantum Confined Stark Effect |
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239 | (3) |
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Doping Superlattices (`n-i-p-i' Crystals) |
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242 | (4) |
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Hetero-n-i-p-i Structures |
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246 | (8) |
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Band Filling Effects in Hetero-n-i-p-is |
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247 | (2) |
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The QCSE in Hetero-n-i-p-is |
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249 | (5) |
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254 | (6) |
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255 | (2) |
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257 | (3) |
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260 | (36) |
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260 | (2) |
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262 | (10) |
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265 | (2) |
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Threshold Current Density |
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267 | (3) |
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270 | (2) |
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Fundamental Gain Calculations |
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272 | (8) |
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Electronic Band Structure and Densities of States |
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272 | (2) |
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Carrier Density and Inversion |
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274 | (2) |
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276 | (1) |
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Optical Gain in 2D and 3D Active Regions |
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277 | (3) |
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280 | (6) |
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Optical Interband Matrix Element |
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284 | (2) |
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Some other Laser Geometries |
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286 | (10) |
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292 | (2) |
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294 | (2) |
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296 | (52) |
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296 | (1) |
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Quantum Interference Transistors |
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297 | (17) |
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Quantum Interference and Negative Magnetoresistance |
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297 | (6) |
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303 | (3) |
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Universal Conductance Fluctuations |
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306 | (3) |
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Quantum Interference Transistors |
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309 | (1) |
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The Gated Ring Interferometer |
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310 | (1) |
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311 | (1) |
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Problems with Quantum Interference Transistors |
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311 | (3) |
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Ballistic Electron Devices |
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314 | (11) |
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Electron Transmission and the Landauer-Buttiker Formula |
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315 | (1) |
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Quantized Conductance in Ballistic Point Contacts |
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316 | (2) |
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318 | (1) |
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The Negative Bend Resistance |
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318 | (1) |
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Quenching of the Hall Effect |
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319 | (1) |
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Possible Applications of Ballistic Electron Devices |
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320 | (3) |
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Boundary Scattering in Ballistic Structures |
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323 | (2) |
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Quantum Dot Resonant Tunnelling Devices |
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325 | (6) |
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Resonant Tunnelling through Quantum Wells |
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326 | (2) |
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Resonant Tunnelling through Quantum Dots |
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328 | (1) |
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Gated Resonant Tunnelling through Quantum Dots |
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329 | (2) |
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Coulomb Blockade and Single-electron Transistors |
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331 | (11) |
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Coulomb Blockade in the Current-biassed Single Junction |
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332 | (2) |
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Coulomb Blockade in Double Junctions |
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334 | (1) |
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Necessary Conditions for Efficient Coulomb Blockade |
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335 | (1) |
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Single-electron Transistors |
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335 | (4) |
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Co-tunnelling and Multiple Tunnel Junctions |
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339 | (1) |
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Possible Applications of Single-electron Transistors |
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340 | (2) |
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The Future of Mesoscopic Devices |
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342 | (6) |
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343 | (2) |
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345 | (3) |
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High-speed Heterostructure Devices |
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348 | (31) |
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348 | (1) |
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349 | (14) |
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349 | (6) |
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GaAs/AlGaAs High-electron-mobility Transistor |
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355 | (3) |
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358 | (3) |
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361 | (2) |
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Vertical Transport Devices |
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363 | (12) |
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364 | (1) |
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365 | (2) |
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Resonant Tunnelling Structures |
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367 | (3) |
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370 | (2) |
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Heterojunction Bipolar Transistors |
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372 | (3) |
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375 | (4) |
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375 | (2) |
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377 | (2) |
Solutions to Selected Exercises |
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379 | (8) |
Index |
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387 | |