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Low Power and Reliable SRAM Memory Cell and Array Design 2011 ed. [Pehme köide]

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  • Formaat: Paperback / softback, 144 pages, kõrgus x laius: 235x155 mm, kaal: 250 g, XII, 144 p., 1 Paperback / softback
  • Sari: Springer Series in Advanced Microelectronics 31
  • Ilmumisaeg: 27-Nov-2013
  • Kirjastus: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
  • ISBN-10: 3642270182
  • ISBN-13: 9783642270185
Teised raamatud teemal:
  • Pehme köide
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  • Formaat: Paperback / softback, 144 pages, kõrgus x laius: 235x155 mm, kaal: 250 g, XII, 144 p., 1 Paperback / softback
  • Sari: Springer Series in Advanced Microelectronics 31
  • Ilmumisaeg: 27-Nov-2013
  • Kirjastus: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
  • ISBN-10: 3642270182
  • ISBN-13: 9783642270185
Teised raamatud teemal:
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability.

Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies