The semiconductor industry is undergoing a transition from the use of standard CMOS silicon to novel device structures that include carbon nanotubes, graphene, quantum dots and III-V materials. A must-read for anyone serious about future nanofabrication technologies, this book addresses the state of the art in nano devices for electronics. It explores exciting opportunities in emerging materials that will take system performance beyond what is offered by traditional CMOS-based microelectronics. The text features contributions from top international experts from industry and academia. Topics covered range from electrical propagation on carbon nanotubes to GaN HEMTs technology and applications.
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies.
Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics.
The book is divided into three parts that address:
- Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices)
- Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells)
- Compound semiconductor devices and technology
This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
Section I: Semiconductor Materials
Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit
Models
Monolithic Integration of Carbon Nanotubes and CMOS
Facile, Scalable, and AmbientElectrochemical Route for Titania Memristor
Fabrication
Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight
Years
Section II: Silicon Devices and Technology
SiGe BiCMOS Technology and Devices
Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant
Tunneling FETs for a New High-Performance Low-Power Paradigm
Development of 3D Chip Integration Technology
Embedded SpinTransferTorque MRAM
Nonvolatile Memory Device: Resistive Random Access Memory
DRAM Technology
Monocrystalline Silicon Solar Cell Optimization and Modeling
Radiation Effects on Silicon Devices
Section III: Compound Semiconductor Devices and Technology
GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth
Technology
GaN HEMTs Technology and Applications
Surface Treatment, Fabrication, and Performances of GaN-Based
MetalOxide-Semiconductor High-Electron Mobility Transistors
GaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High
Power/High Temperature Devices
GaAs HBT and Power Amplifier Design for Handset Terminals
Resonant Tunneling and Negative Differential Resistance in III-Nitrides
New Frontiers in Intersubband Optoelectronics Using III- Nitride
Semiconductors
Krzysztof Iniewski is managing R&D developments at Redlen Technologies, Inc., a start-up company in British Columbia, and is also an Executive Director of CMOS Emerging Teclmologies, Inc.
