List of Contributors |
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xv | |
About the Author |
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xvii | |
Preface |
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xix | |
Acknowledgments |
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xxiii | |
Part I Device Modeling and Applications |
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1 | (130) |
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Chapter 1 Tunnel FET: Devices and Circuits |
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3 | (24) |
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3 | (2) |
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5 | (2) |
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6 | (1) |
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6 | (1) |
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1.3 Tunneling Field-Effect Transistors |
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7 | (3) |
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1.3.1 Current-Voltage Characteristics |
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8 | (1) |
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1.3.2 Capacitance-Voltage Characteristics |
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9 | (1) |
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10 | (5) |
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1.4.1 ON Current Performance Boosters |
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10 | (3) |
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13 | (2) |
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1.5 TFET Characteristics and Impact on the Circuit Design |
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15 | (1) |
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1.5.1 Unidirectional Conduction |
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15 | (1) |
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1.5.2 Enhanced ON-State Miller Capacitance |
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16 | (1) |
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1.6 Tunnel FET SRAM Design |
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16 | (2) |
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17 | (1) |
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17 | (1) |
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1.7 TFET Analog/RF Application |
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18 | (4) |
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1.7.1 Transconductance Generation Factor (gm/IDs) |
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20 | (1) |
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1.7.2 Linearity Performance |
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21 | (1) |
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22 | (1) |
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23 | (1) |
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23 | (1) |
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24 | (3) |
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Chapter 2 Electrothermal Characterization, TCAD Simulations, and Physical Modeling of Advanced SiGe HBTs |
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27 | (68) |
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2.1 SiGe HBT Technologies and Their Thermal Issues |
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27 | (6) |
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2.1.1 THz Waves and Applications |
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27 | (1) |
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2.1.2 SiGe BiCMOS Technologies |
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28 | (2) |
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2.1.3 Thermal Issues in SiGe HBT Technology Nodes |
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30 | (3) |
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2.2 Device Characterization in SiGe HBT Technologies |
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33 | (28) |
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2.2.1 Modeling of Device Self-heating in HiCuM |
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33 | (2) |
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2.2.2 Self-heating Effect on the Device DC and AC Characteristics |
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35 | (6) |
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2.2.3 Extraction of the Rth |
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41 | (1) |
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2.2.4 Extraction of the Zth |
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42 | (7) |
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2.2.5 Recursive Thermal Network Models |
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49 | (4) |
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2.2.6 Behavior of the Transistor Under Two Tones Excitation |
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53 | (8) |
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2.3 Electrothermal Impact of the BEOL Metallization in SiGe HBTs |
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61 | (27) |
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2.3.1 Electrothermal Characterization of Dedicated HBT Test Structures |
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62 | (11) |
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2.3.2 Compact Modeling of the BEOL Thermal Impact |
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73 | (7) |
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2.3.3 Static and Dynamic 3D TCAD Thermal Simulations |
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80 | (8) |
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88 | (7) |
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Chapter 3 InP-Based High-Electron-Mobility Transistors for High-Frequency Applications |
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95 | (20) |
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3.1 History and Background of HEMT |
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95 | (1) |
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96 | (1) |
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97 | (1) |
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3.3.1 Two-Dimensional Electron Gas in HEMT |
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97 | (1) |
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3.4 Materials and its Properties-(InP/GaAs) |
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98 | (1) |
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3.5 General Structure of Inp HEMT |
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99 | (1) |
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3.6 DC and Microwave Characteristics of HEMT |
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100 | (1) |
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3.7 Drain Current Characteristics |
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101 | (4) |
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3.8 Subthreshold and Gate Leakage Characteristics |
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105 | (1) |
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3.9 Measurement of DC and RF Performance of the Device |
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105 | (1) |
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3.10 Transconductance Characteristics |
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106 | (4) |
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3.11 Drain Current Characteristics |
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110 | (1) |
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3.12 Subthreshold and Gate Leakage Characteristics |
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110 | (3) |
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113 | (1) |
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113 | (1) |
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114 | (1) |
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Chapter 4 Organic Transistor- Device Structure, Model and Applications |
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115 | (16) |
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4.1 Organic Electronics: Low-Cost, Large-Area, and Flexible |
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115 | (1) |
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4.2 Field-Effect Transistors Structure |
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115 | (2) |
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4.3 Field-Effect Transistors Characterization |
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117 | (2) |
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4.4 Organic Semiconductors Selection |
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119 | (2) |
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4.5 Interfacial Engineering in Field-Effect Transistors |
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121 | (6) |
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4.5.1 Changes in Surface Energy as a Result of SAM Treatment |
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123 | (2) |
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4.5.2 Work Function Shift |
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125 | (1) |
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126 | (1) |
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127 | (2) |
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129 | (2) |
Part II Spintronics |
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131 | (86) |
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Chapter 5 Mitigating Read Disturbance Errors in STT-RAM Caches by Using Data Compression |
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133 | (20) |
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133 | (1) |
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134 | (3) |
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5.2.1 Motivation for Using Nonvolatile Memories |
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135 | (1) |
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135 | (1) |
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5.2.3 Origin of Read Disturbance Error |
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135 | (1) |
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5.2.4 Characteristics of Read Disturbance Error |
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136 | (1) |
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5.2.5 Strategies for Addressing RDE |
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136 | (1) |
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137 | (1) |
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5.3 SHIELD: Key Idea and Architecture |
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137 | (4) |
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5.3.1 Compression Algorithm |
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137 | (1) |
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5.3.2 Defining Consecutive Reads |
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138 | (1) |
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138 | (1) |
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5.3.4 Action on Read and Write Operations |
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139 | (1) |
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5.3.5 Overhead Assessment |
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140 | (1) |
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5.4 Salient Features of SHIELD and Qualitative Comparison |
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141 | (1) |
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5.5 Experimentation Platform |
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142 | (2) |
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5.5.1 Simulator Parameters |
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142 | (1) |
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143 | (1) |
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5.5.3 Simulation Completion Strategy |
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143 | (1) |
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5.5.4 Comparison With Related Schemes |
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143 | (1) |
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144 | (1) |
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144 | (5) |
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144 | (4) |
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5.6.2 Parameter Sensitivity Results |
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148 | (1) |
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5.7 Conclusion and Future Work |
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149 | (1) |
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150 | (3) |
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Chapter 6 Multi-Functionality of Spintronic Materials |
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153 | (64) |
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6.1 Introduction-What Is Spintronics? |
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153 | (5) |
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6.1.1 Spintronics Based on Multiferroics |
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154 | (3) |
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6.1.2 Spintronics Based on DMSs |
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157 | (1) |
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6.2 Methods of Synthesis of the Spintronic Materials |
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158 | (4) |
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6.2.1 Synthesis of Multiferroics |
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158 | (3) |
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161 | (1) |
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6.3 Spintronics Based on BTO Multiferroic Systems |
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162 | (23) |
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6.3.1 Perovskite (ABO3) Multiferroics |
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162 | (2) |
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6.3.2 Single-Phase Multiferroic BTO Systems |
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164 | (14) |
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6.3.3 Multiferroic Composites |
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178 | (3) |
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6.3.4 Multiferroic Thin Films |
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181 | (4) |
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6.4 Spintronics Based on Diluted Magnetic Semiconductor, DMS ZnO |
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185 | (22) |
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6.4.1 TM Ions Impurity in DMS ZnO |
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185 | (1) |
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6.4.2 RE Ions Impurity in DMS ZnO |
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186 | (1) |
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6.4.3 Defects-Assisted Ferromagnetism Due to TM and RE Ions in ZnO |
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186 | (2) |
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6.4.4 First-Principle Calculations for RE and TM Ions in the Wurtzite ZnO Structure |
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188 | (1) |
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6.4.5 Influence of Dopant Concentration (TM and RE ions) on Ferromagnetism of ZnO |
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189 | (1) |
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6.4.6 Realizing Wurtzite Structure of ZnO With Dopant Ions |
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189 | (4) |
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6.4.7 Nanostructural Formation in Pure and Doped DMS ZnO |
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193 | (2) |
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6.4.8 Raman Spectra for Ni-, Cu-, Ce-Substituted ZnO Nanoparticles |
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195 | (1) |
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6.4.9 Photoluminescence Spectra Evaluated Defects in Co:ZnO Nanoparticles |
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196 | (1) |
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6.4.10 Magnetism in DMS ZnO |
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197 | (10) |
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207 | (1) |
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207 | (1) |
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207 | (10) |
Part III Optics and Photonics |
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217 | (70) |
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Chapter 7 Photonics Integrated Circuits |
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219 | (52) |
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7.1 Introduction to Photonics |
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219 | (1) |
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219 | (2) |
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220 | (1) |
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7.2.2 III-V Semiconductor Materials |
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220 | (1) |
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220 | (1) |
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221 | (1) |
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7.2.5 Silicon-on-Insulator |
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221 | (1) |
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221 | (8) |
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222 | (1) |
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222 | (4) |
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226 | (1) |
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227 | (2) |
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229 | (17) |
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229 | (8) |
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7.4.2 Arrayed Waveguide Grating |
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237 | (3) |
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7.4.3 Mach-Zehnder Interferometer |
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240 | (2) |
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242 | (4) |
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246 | (18) |
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246 | (5) |
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251 | (7) |
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258 | (6) |
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7.6 Photonics Integrated Circuits |
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264 | (3) |
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264 | (1) |
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7.6.2 Transmitter and Receiver |
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265 | (2) |
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267 | (4) |
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Chapter 8 Graphene Based Optical Interconnects |
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271 | (16) |
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Berardi Sensale-Rodriguez |
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271 | (1) |
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8.2 Graphene: Structure and Electrical Properties |
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272 | (1) |
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8.3 Graphene: Optical Properties |
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273 | (2) |
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8.4 Waveguide-Integrated Graphene Devices: Fundamental Operation Principles |
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275 | (3) |
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8.5 Waveguide-Integrated Graphene Devices: Recent Experimental Developments |
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278 | (1) |
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8.6 Emerging Research Trends in Graphene-Based Optical Devices |
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279 | (3) |
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282 | (5) |
Part IV Plasmonics |
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287 | (66) |
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Chapter 9 Hot Carrier Generation in Plasmonic Nanostructures: Physics and Device Applications |
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289 | (28) |
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289 | (1) |
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9.2 The Physics of Hot Carrier Generation, Scattering, and Transport Processes |
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290 | (13) |
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9.2.1 The Optical Properties of Plasmonic Nanoresonators |
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290 | (5) |
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9.2.2 The Generation of Hot Carriers and Their Energy Distribution |
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295 | (2) |
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9.2.3 Scattering and Lifetimes of Hot Carriers |
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297 | (3) |
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9.2.4 Hot Carrier Injection Into Semiconductors |
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300 | (3) |
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9.3 Applications of Hot Carrier Generation |
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303 | (6) |
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303 | (3) |
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9.3.2 Chemical Reactions Through Transfer of Charge Carriers |
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306 | (3) |
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309 | (1) |
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310 | (1) |
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311 | (6) |
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Chapter 10 Plasmonic Metamaterial-Based RF-THz Integrated Circuits: Design and Analysis |
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317 | (36) |
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317 | (4) |
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10.1.1 Surface Plasmon Polaritons |
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318 | (2) |
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10.1.2 Spoof Surface Plasmon Polaritons |
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320 | (1) |
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10.2 Unit Cell Design and Dispersion Analysis |
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321 | (7) |
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10.2.1 Design and Analysis at Terahertz Frequency Regime |
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322 | (1) |
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10.2.2 Design and Analysis at Microwave Frequency |
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323 | (4) |
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10.2.3 Conversion and Momentum Matching (at Microwave, mm Wave and THz Frequencies) |
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327 | (1) |
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10.3 Plasmonic Metamaterial-Based Transitions and RF-Microwave Components |
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328 | (22) |
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328 | (2) |
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330 | (4) |
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10.3.3 Planar Ring Resonators |
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334 | (8) |
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10.3.4 Spoof SPP-Fed Antenna Design |
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342 | (8) |
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350 | (1) |
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350 | (3) |
Part V Emerging Materials |
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353 | (80) |
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Chapter 11 Advances in InSb and InAs Nanowire Based Nanoelectronic Field Effect Transistors |
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355 | (20) |
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355 | (3) |
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11.1.1 Search for Better Materials and Devices |
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355 | (1) |
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11.1.2 InSb and InAs Materials and Their Nanowires |
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356 | (2) |
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11.2 InSb and InAs Nanowire Growth |
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358 | (3) |
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11.3 InSb and InAs Materials and Their Nanowire Field-Effect Transistors |
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361 | (2) |
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11.4 Diffusive Transport Model Within the Channel |
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363 | (2) |
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11.4.1 Electrostatics and Channel Potential With Schottky Barrier at the Metal-nanowire Junctions |
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363 | (2) |
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11.4.2 1D Transport and Landauer Formalism |
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365 | (1) |
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11.5 InSb and InAs NW SB-FETs |
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365 | (2) |
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367 | (1) |
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11.7 Transport in NW Tunnel FETs |
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368 | (1) |
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11.8 Emerging Non-CMOS Nanoelectronic Devices and Quantum Devices |
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368 | (2) |
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11.9 Conclusion and Outlook |
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370 | (1) |
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371 | (1) |
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371 | (4) |
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Chapter 12 Carbon Nanotube and Nanowires for Future Semiconductor Devices Applications |
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375 | (24) |
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375 | (1) |
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376 | (6) |
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12.2.1 Symmetry Structure of Nanotubes |
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377 | (2) |
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12.2.2 Electronic Characteristics |
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379 | (1) |
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12.2.3 The CNTFET Device Structures |
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380 | (2) |
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382 | (1) |
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383 | (1) |
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12.4 Effect of Oxide Thickness on Gate Capacitance in Nanodevices |
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383 | (4) |
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12.5 Effect of Device Parameters on Threshold Voltage in CNTFET Devices |
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387 | (8) |
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12.5.1 Effect of Chiral Vector |
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388 | (1) |
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12.5.2 Effect of Temperature |
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389 | (2) |
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12.5.3 Effect of Metal Gate Work Function |
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391 | (1) |
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12.5.4 Effect of High-K Dielectric |
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392 | (1) |
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12.5.5 Effect of Channel Length |
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393 | (2) |
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395 | (1) |
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396 | (3) |
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Chapter 13 Role of Nanocomposites in Future Nanoelectronic Information Storage Devices |
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399 | (34) |
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399 | (2) |
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13.2 Classification of Nanomaterials |
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401 | (2) |
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13.2.1 Origin Relevant Nanomaterials |
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401 | (1) |
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13.2.2 Dimension Relevant Nanomaterials |
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401 | (1) |
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13.2.3 Structural Configuration Relevant Nanomaterials |
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402 | (1) |
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13.3 Trends and Future Applications |
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403 | (2) |
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13.4 Nanocomposite: A Brief Overview |
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405 | (2) |
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13.4.1 Ceramic-Matrix Nanocomposites |
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405 | (1) |
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13.4.2 Metal-Matrix Nanocomposites |
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406 | (1) |
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13.4.3 Polymer-Matrix Nanocomposites |
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406 | (1) |
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13.5 Nanoelectronic: Information Storage Devices |
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407 | (18) |
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13.5.1 Genesis of the Concept |
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407 | (1) |
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13.5.2 Approaches of Information Storage Devices |
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408 | (4) |
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13.5.3 Fabrication of Information Storage Devices |
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412 | (6) |
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13.5.4 Electrical Characteristics of the Hybrid Information Storage Devices |
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418 | (3) |
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13.5.5 Switching and Carrier Transport Mechanism |
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421 | (4) |
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13.6 Outcomes and Conclusive Aspect |
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425 | (1) |
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426 | (7) |
Index |
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433 | |