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1 | (16) |
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1.1 Nanoscale Complexity in Modern Nanotechnology |
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1 | (3) |
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1.2 The Interaction of Light and Matter |
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4 | (2) |
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1.2.1 Optical Properties in Semiconductors |
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5 | (1) |
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1.3 Plasmonics: Controlling Light at the Nanoscale |
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6 | (11) |
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1.3.1 Plasmon Resonances in Semiconductors and Metals |
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6 | (2) |
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1.3.2 Propagating Plasmon Polaritons at Metal/Dielectric Interfaces |
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8 | (2) |
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1.3.3 Localized Surface Plasmon Resonances |
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10 | (1) |
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1.3.4 Surface Plasmons in Complex Nanostructures |
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11 | (2) |
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13 | (4) |
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17 | (20) |
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2.1 Density Functional Theory: Quantum Mechanics for Complex Systems |
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17 | (4) |
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2.1.1 Calculating Optical Properties with Density Functional Theory |
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19 | (2) |
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2.2 Finite-Difference Time-Domain: Electrodynamics for Nanostructurcs |
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21 | (1) |
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2.3 Scanning Transmission Electron Microscopy: Ultrahigh Resolution Analysis |
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22 | (5) |
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2.3.1 Correcting Aberrations in an Electron Probe |
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24 | (1) |
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2.3.2 Bright Field and Dark Field in the STEM |
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25 | (2) |
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2.4 Electron-Beam Spectroscopies for Nanoscale Optical Properties |
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27 | (10) |
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2.4.1 Electron Beam Interactions with Materials |
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28 | (1) |
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2.4.2 Electron Energy Loss Spectroscopy |
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29 | (2) |
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2.4.3 Cathodoluminescence |
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31 | (3) |
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34 | (3) |
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3 Extracting Interface Absorption Effects from First-Principles |
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37 | (16) |
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3.1 Atomistic Interface Effects |
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37 | (7) |
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3.1.1 Extracting Atomistic Interface Absorption Effects |
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38 | (2) |
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3.1.2 Aa, the Interface Absorbance Difference |
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40 | (1) |
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3.1.3 Accuracy of the Generalized Gradient Approximation |
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41 | (1) |
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3.1.4 Absorption and Reflection at the Atomic Scale |
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42 | (2) |
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3.2 Converging the Interface |
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44 | (1) |
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3.3 Inverted Design Through Interface Concentration |
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44 | (2) |
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3.3.1 Combining Distinct Interfaces |
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44 | (2) |
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3.4 Quantitative Applications |
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46 | (7) |
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3.4.1 Interface Absorption vs. Bulk Absorption |
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46 | (1) |
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3.4.2 Wavelength Selectivity and Absorption Enhancement |
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47 | (2) |
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49 | (4) |
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4 Advanced Electron Microscopy for Complex Nanotechnology |
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53 | (22) |
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53 | (8) |
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4.1.1 Negative-Bias Temperature Instability in Flat Si-Capped pMOSFETs |
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54 | (3) |
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4.1.2 Structural and Compositional Study of Ge pMOS FinFETs |
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57 | (4) |
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4.2 Magnetic and Plasmonic Nanocomposites |
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61 | (14) |
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4.2.1 Composition of Nanocomposite Components |
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61 | (4) |
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4.2.2 Bonding of SPIONs to the Au Nanostructures |
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65 | (4) |
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4.2.3 The Optical Response of the Nanocomposites |
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69 | (4) |
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73 | (2) |
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5 Probing Plasmons in Three Dimensions |
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75 | (16) |
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5.1 Plasmons in Three-Dimensional Structures |
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75 | (1) |
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5.2 Complementary Spectroscopies in the Electron Microscope |
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76 | (9) |
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5.2.1 Surface Plasmons Observed in Both EELS and CL |
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78 | (1) |
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5.2.2 Constant Background Subtraction in EELS Spectrum Imaging |
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79 | (3) |
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5.2.3 Surface Plasmons Observed Only in EELS |
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82 | (1) |
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5.2.4 Surface Plasmons Observed Only in CL |
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83 | (2) |
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5.3 Validation of Experimental Results |
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85 | (6) |
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5.3.1 Approximating Nanoparticle Geometries |
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85 | (2) |
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5.3.2 Finite-Difference Time-Domain Confirmation of Experimental Analysis |
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87 | (2) |
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89 | (2) |
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6 The Plasmonic Response of Archimedean Spirals |
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91 | (14) |
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6.1 Combining Photonics and Electron Microscopy for Plasmonic Analyses |
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92 | (5) |
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6.1.1 EELS Analysis of Lithographically Prepared Nanostructures |
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93 | (1) |
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6.1.2 Enhancing STEM with Photonics |
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94 | (3) |
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6.2 Orbital Angular Momentum in Plasmonic Spiral Holes |
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97 | (8) |
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6.2.1 Visualizing Orbital Angular Momentum with Cathodoluminescence |
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99 | (3) |
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102 | (3) |
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7 Future Directions and Conclusion |
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105 | (4) |
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7.1 Advanced Experiments for Nanoscale Optical Analyses |
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105 | (2) |
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7.2 Outlook and Conclusion |
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107 | (2) |
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107 | (2) |
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Appendix A Overview of Electron Microscopes |
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109 | (4) |
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109 | (1) |
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110 | (1) |
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110 | (3) |
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111 | (2) |
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Appendix B Fit Parameters EELS and CL Data in Chap. 5 |
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113 | (2) |
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Appendix C Sample Preparation for STEM Analysis |
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115 | |
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C.1 Solid-State Device Cross-Sections with Dual Beam FIB/SEM |
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115 | (2) |
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C.2 Direct Sample Preparation of Nanospiral Arrays with EBL |
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117 | |