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Smart CMOS Image Sensors and Applications 2nd edition [Kõva köide]

(Nara Institute of Science and Technology, Ikoma, Japan)
  • Formaat: Hardback, 310 pages, kõrgus x laius: 234x156 mm, kaal: 453 g, 18 Tables, black and white; 8 Illustrations, color; 192 Illustrations, black and white
  • Sari: Optical Science and Engineering
  • Ilmumisaeg: 04-Jun-2020
  • Kirjastus: CRC Press Inc
  • ISBN-10: 1498764649
  • ISBN-13: 9781498764643
Teised raamatud teemal:
Smart CMOS Image Sensors and Applications 2nd editionSuurem pilt
  • Formaat: Hardback, 310 pages, kõrgus x laius: 234x156 mm, kaal: 453 g, 18 Tables, black and white; 8 Illustrations, color; 192 Illustrations, black and white
  • Sari: Optical Science and Engineering
  • Ilmumisaeg: 04-Jun-2020
  • Kirjastus: CRC Press Inc
  • ISBN-10: 1498764649
  • ISBN-13: 9781498764643
Teised raamatud teemal:
Püsilink: https://www.kriso.ee/db/9781498764643.html
Märksõnad:

Revised and expanded for this new edition, Smart CMOS Image Sensors and Applications, Second Edition is the only book available devoted to smart CMOS image sensors and applications. The book describes the fundamentals of CMOS image sensors and optoelectronic device physics, and introduces typical CMOS image sensor structures, such as the active pixel sensor (APS). Also included are the functions and materials of smart CMOS image sensors and present examples of smart imaging. Various applications of smart CMOS image sensors are also discussed. Several appendices supply a range of information on constants, illuminance, MOSFET characteristics, and optical resolution. Expansion of smart materials, smart imaging and applications, including biotechnology and optical wireless communication, are included.

Features

• Covers the fundamentals and applications including smart materials, smart imaging, and various applications

• Includes comprehensive references

• Discusses a wide variety of applications of smart CMOS image sensors including biotechnology and optical wireless communication

• Revised and expanded to include the state of the art of smart image sensors

Preface to the Second Edition ix
About the Author xiii
1 Introduction
1(10)
1.1 A general overview
1(1)
1.2 Brief history of CMOS image sensors
2(3)
1.2.1 Competition with CCDs
3(1)
1.2.2 Solid-state imagers with in-pixel amplification
4(1)
1.2.3 Present CMOS image sensors
4(1)
1.3 Brief history of smart CMOS image sensors
5(4)
1.3.1 Vision chips
5(2)
1.3.2 Advancement of CMOS technology and smart CMOS image sensors
7(1)
1.3.3 Smart CMOS image sensors based on high performance CMOS image sensor technologies
7(2)
1.4 Organization of the book
9(2)
2 Fundamentals of CMOS image sensors
11(50)
2.1 Introduction
11(1)
2.2 Fundamentals of photo-detection
12(4)
2.2.1 Absorption coefficient
12(1)
2.2.2 Behavior of minority carriers
13(2)
2.2.3 Sensitivity and quantum efficiency
15(1)
2.3 Photo-detectors for smart CMOS image sensors
16(13)
2.3.1 pn-junction photodiode
16(9)
2.3.2 Photo-gate
25(1)
2.3.3 Photo-transistor
26(1)
2.3.4 Avalanche photodiode
26(2)
2.3.5 Photo-conductive detector
28(1)
2.4 Accumulation mode in PDs
29(7)
2.4.1 Potential change in accumulation mode
30(1)
2.4.2 Potential description
31(1)
2.4.3 Behavior of photo-generated carriers in PD
32(4)
2.5 Basic pixel structures
36(7)
2.5.1 Passive pixel sensor
36(2)
2.5.2 Active pixel sensor, 3T-APS
38(2)
2.5.3 Active pixel sensor, 4T-APS
40(3)
2.6 Sensor peripherals
43(7)
2.6.1 Addressing
43(2)
2.6.2 Readout circuits
45(3)
2.6.3 Analog-to-digital converters
48(2)
2.7 Basic sensor characteristics
50(4)
2.7.1 Noise
50(2)
2.7.2 Dynamic range
52(1)
2.7.3 Speed
53(1)
2.8 Color
54(3)
2.8.1 On-chip color filter type
54(2)
2.8.2 Three imagers type
56(1)
2.8.3 Three light sources type
56(1)
2.9 Comparison among pixel architectures
57(1)
2.10 Comparison with CCDs
57(4)
3 Smart structures and materials
61(46)
3.1 Introduction
61(1)
3.2 Smart pixels
62(16)
3.2.1 Analog mode
62(5)
3.2.2 Pulse modulation mode
67(9)
3.2.3 Digital mode
76(2)
3.3 Smart materials and structures
78(14)
3.3.1 Silicon-on-insulator
79(2)
3.3.2 Extending to NIR region
81(3)
3.3.3 Backside illumination
84(1)
3.3.4 3D integration
85(2)
3.3.5 Smart structure for color detection
87(5)
3.4 Dedicated pixel arrangement and optics for smart CMOS image sensors
92(15)
3.4.1 Phase-difference detection auto focus
93(1)
3.4.2 Hyper omni vision
93(1)
3.4.3 Biologically inspired imagers
94(2)
3.4.4 Light field camera
96(3)
3.4.5 Polarimetric imaging
99(4)
3.4.6 Lensless imaging
103(4)
4 Smart imaging
107(38)
4.1 Introduction
107(1)
4.2 High sensitivity
108(6)
4.2.1 Dark current reduction
108(2)
4.2.2 Differential APS
110(1)
4.2.3 High conversion gain pixel
111(1)
4.2.4 SPAD
111(1)
4.2.5 Column-parallel processing
111(3)
4.3 High-speed
114(8)
4.3.1 Overview
114(1)
4.3.2 Global shutter
115(2)
4.3.3 Column- and pixel-parallel processing for high speed imaging
117(1)
4.3.4 Ultra-high-speed
118(4)
4.4 Wide dynamic range
122(8)
4.4.1 Overview
122(3)
4.4.2 Nonlinear response
125(1)
4.4.3 Linear response
126(4)
4.5 Demodulation
130(7)
4.5.1 Overview
130(1)
4.5.2 Correlation
131(2)
4.5.3 Method of two accumulation regions
133(4)
4.6 Three-dimensional range finder
137(8)
4.6.1 Overview
137(2)
4.6.2 Time-of-flight
139(3)
4.6.3 Triangulation
142(3)
5 Applications
145(60)
5.1 Introduction
145(1)
5.2 Information and communication technology applications
145(15)
5.2.1 Optical wireless communication
146(9)
5.2.2 Optical ID tag
155(5)
5.3 Chemical applications
160(5)
5.3.1 Optical activity imaging
160(3)
5.3.2 pH imaging sensor
163(2)
5.4 Bioscience and Biotechnology applications
165(25)
5.4.1 Attachment type
167(2)
5.4.2 On-chip type
169(12)
5.4.3 Implantation type
181(9)
5.5 Medical applications
190(15)
5.5.1 Capsule endoscope
190(2)
5.5.2 Retinal prosthesis
192(13)
Appendices
205(24)
A Tables of constants
207(2)
B Illuminance
209(4)
C Human eye and CMOS image sensors
213(4)
D Wavelength region in visible and infrared lights
217(2)
E Fundamental characteristics of MOS capacitors
219(2)
F Fundamental characteristics of MOSFET
221(4)
G Optical format and resolution
225(2)
H Intrinsic optical signal and in vivo window
227(2)
References 229(56)
Index 285
Jun Ohta received the B.E., M.E., and Dr. Eng. degrees in applied physics, all from the University of Tokyo, Japan, in 1981, 1983, and 1992, respectively. In 1983, he joined Mitsubishi Electric Corporation, Hyogo, Japan. From 1992 to 1993, he was a visiting scientist in Optoelectronics Computing Systems Center, University of Colorado at Boulder. In 1998, he joined Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Nara, Japan as Associate Professor. He was appointed as Professor in 2004. His current research interests are smart CMOS image sensors for biomedical applications and retinal prosthetic devices. He serves as the Distinguished Lecturer of IEEE Solid-State Circuits Society, a section editor of IET Journal of Engineering, an associate editor of IEEE Trans. Biomedical Circuits and Systems, an editor of Japanese Journal of Applied Physic, etc. He also served as technical program committee member of IEEE ISSCC, Symposium on VLSI Circuits, IEEE BioCAS 2018, etc. He organized the IEEE BioCAS 2019 at Nara as one of the general co-chairs. He is a senior member of both IEEE and the IEE Japan, and a fellow member of both the JSAP and the ITE Japan.