Preface to the Second Edition |
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ix | |
About the Author |
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xiii | |
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1 | (10) |
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1 | (1) |
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1.2 Brief history of CMOS image sensors |
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2 | (3) |
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1.2.1 Competition with CCDs |
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3 | (1) |
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1.2.2 Solid-state imagers with in-pixel amplification |
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4 | (1) |
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1.2.3 Present CMOS image sensors |
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4 | (1) |
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1.3 Brief history of smart CMOS image sensors |
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5 | (4) |
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5 | (2) |
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1.3.2 Advancement of CMOS technology and smart CMOS image sensors |
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7 | (1) |
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1.3.3 Smart CMOS image sensors based on high performance CMOS image sensor technologies |
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7 | (2) |
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1.4 Organization of the book |
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9 | (2) |
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2 Fundamentals of CMOS image sensors |
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11 | (50) |
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11 | (1) |
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2.2 Fundamentals of photo-detection |
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12 | (4) |
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2.2.1 Absorption coefficient |
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12 | (1) |
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2.2.2 Behavior of minority carriers |
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13 | (2) |
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2.2.3 Sensitivity and quantum efficiency |
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15 | (1) |
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2.3 Photo-detectors for smart CMOS image sensors |
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16 | (13) |
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2.3.1 pn-junction photodiode |
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16 | (9) |
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25 | (1) |
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26 | (1) |
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2.3.4 Avalanche photodiode |
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26 | (2) |
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2.3.5 Photo-conductive detector |
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28 | (1) |
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2.4 Accumulation mode in PDs |
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29 | (7) |
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2.4.1 Potential change in accumulation mode |
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30 | (1) |
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2.4.2 Potential description |
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31 | (1) |
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2.4.3 Behavior of photo-generated carriers in PD |
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32 | (4) |
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2.5 Basic pixel structures |
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36 | (7) |
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2.5.1 Passive pixel sensor |
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36 | (2) |
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2.5.2 Active pixel sensor, 3T-APS |
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38 | (2) |
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2.5.3 Active pixel sensor, 4T-APS |
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40 | (3) |
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43 | (7) |
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43 | (2) |
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45 | (3) |
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2.6.3 Analog-to-digital converters |
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48 | (2) |
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2.7 Basic sensor characteristics |
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50 | (4) |
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50 | (2) |
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52 | (1) |
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53 | (1) |
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54 | (3) |
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2.8.1 On-chip color filter type |
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54 | (2) |
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56 | (1) |
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2.8.3 Three light sources type |
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56 | (1) |
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2.9 Comparison among pixel architectures |
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57 | (1) |
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2.10 Comparison with CCDs |
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57 | (4) |
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3 Smart structures and materials |
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61 | (46) |
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61 | (1) |
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62 | (16) |
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62 | (5) |
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3.2.2 Pulse modulation mode |
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67 | (9) |
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76 | (2) |
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3.3 Smart materials and structures |
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78 | (14) |
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3.3.1 Silicon-on-insulator |
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79 | (2) |
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3.3.2 Extending to NIR region |
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81 | (3) |
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3.3.3 Backside illumination |
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84 | (1) |
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85 | (2) |
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3.3.5 Smart structure for color detection |
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87 | (5) |
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3.4 Dedicated pixel arrangement and optics for smart CMOS image sensors |
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92 | (15) |
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3.4.1 Phase-difference detection auto focus |
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93 | (1) |
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93 | (1) |
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3.4.3 Biologically inspired imagers |
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94 | (2) |
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96 | (3) |
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3.4.5 Polarimetric imaging |
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99 | (4) |
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103 | (4) |
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107 | (38) |
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107 | (1) |
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108 | (6) |
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4.2.1 Dark current reduction |
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108 | (2) |
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110 | (1) |
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4.2.3 High conversion gain pixel |
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111 | (1) |
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111 | (1) |
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4.2.5 Column-parallel processing |
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111 | (3) |
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114 | (8) |
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114 | (1) |
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115 | (2) |
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4.3.3 Column- and pixel-parallel processing for high speed imaging |
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117 | (1) |
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118 | (4) |
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122 | (8) |
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122 | (3) |
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125 | (1) |
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126 | (4) |
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130 | (7) |
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130 | (1) |
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131 | (2) |
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4.5.3 Method of two accumulation regions |
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133 | (4) |
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4.6 Three-dimensional range finder |
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137 | (8) |
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137 | (2) |
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139 | (3) |
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142 | (3) |
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145 | (60) |
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145 | (1) |
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5.2 Information and communication technology applications |
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145 | (15) |
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5.2.1 Optical wireless communication |
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146 | (9) |
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155 | (5) |
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5.3 Chemical applications |
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160 | (5) |
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5.3.1 Optical activity imaging |
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160 | (3) |
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163 | (2) |
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5.4 Bioscience and Biotechnology applications |
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165 | (25) |
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167 | (2) |
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169 | (12) |
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181 | (9) |
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190 | (15) |
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190 | (2) |
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192 | (13) |
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205 | (24) |
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207 | (2) |
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209 | (4) |
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C Human eye and CMOS image sensors |
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213 | (4) |
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D Wavelength region in visible and infrared lights |
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217 | (2) |
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E Fundamental characteristics of MOS capacitors |
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219 | (2) |
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F Fundamental characteristics of MOSFET |
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221 | (4) |
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G Optical format and resolution |
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225 | (2) |
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H Intrinsic optical signal and in vivo window |
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227 | (2) |
References |
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229 | (56) |
Index |
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285 | |