Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.

New to this edition:

* Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth, simple manner
* Expanded discussion of small-dimension effects, including velocity saturation, drain-induced barrier lowering, ballistic operation, polysilicon depletion, quantum effects, gate tunneling current, and gate-induced drain leakage
* Expanded discussion of small-signal modeling, including gate and substrate current modeling and flicker noise
* New chapter on substrate nonuniformity and structural effects, discussing transversal and lateral (halo) doping nonuniformity, stress and well proximity effects, and statistical variability
* A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design
* Extensively updated bibliography
* An accompanying website includes additional details not covered in the text, as well as model computer code

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"The only book that covers device physics and modeling in a clear and cohesive fashion."--Ali M. Niknejad, University of California-Berkeley "This is an excellent book and one that is very well respected within the Integrated Circuits community."--Adel Sedra, University of Toronto

Preface

xvii

Chapter 1 Semiconductors, Junctions, and MOSFET Overview

(64)

1.1 Introduction

(1)

1.2 Semiconductors

(14)

1.2.1 Intrinsic Semiconductors, Free Electrons, and Holes

(2)

1.2.2 Extrinsic Semiconductors

(3)

1.2.3 Equilibrium in the Absence of Electric Field

(3)

1.2.4 Equilibrium in the Presence of Electric Field

(2)

1.2.5 Nonequilibrium; Quasi-Fermi Levles

(1)

1.2.6 Relations between Charge Density, Electric Field, and Potential; Poisson's Equation

(2)

1.3 Conduction

(11)

1.3.1 Transit Time

(2)

1.3.2 Drift

(5)

1.3.3 Diffusion

(3)

1.3.4 Total Current

(1)

1.4 Contact Potentials

(6)

1.5 The pn Junction

(11)

1.6 Overview of the MOS Transitor

(11)

1.6.1 Basic Structure

(4)

1.6.2 A Qualitative Description of MOS Transistor Operation

(2)

1.6.3 A Fluid Dynamical Analog

(3)

1.6.4 MOS Transistor Characteristics

(2)

1.7 Fabrication Processes and Device Features

(6)

1.8 A Brief Overview of This Book

(2)

References

(1)

Problems

(2)

Chapter 2 The Two-Terminal MOS Structure

(50)

2.1 Introduction

(1)

2.2 The Flatband Voltage

(7)

2.3 Potential Balance and Charge Balance

(2)

2.4 Effect of Gate-Body Voltage on Surface Condition

(11)

2.4.1 Flatband Condition

(1)

2.4.2 Accumulation

(1)

2.4.3 Depletion and Inversion

(4)

2.4.4 General Analysis

(6)

2.5 Accumulation and Depletion

(2)

2.6 Inversion

(14)

2.6.1 General Relations and Regions of Inversion

(6)

2.6.2 Strong Inversion

(4)

2.6.3 Weak Inversion

(3)

2.6.4 Moderate Inversion

101

(1)

2.7 Small-Signal Capacitance

102

(9)

2.8 Summary of Properties of the Regions of Inversion

111

(1)

References

111

(1)

Problems

112

(3)

Chapter 3 The Three-Terminal MOS Structure

115

(36)

3.1 Introduction

115

(1)

3.2 Contacting the Inversion Layer

115

(16)

3.3 The Body Effect

131

(1)

3.4 Regions of Inversion

132

(9)

3.4.1 Approximate Limits

132

(4)

3.4.2 Strong Inversion

136

(2)

3.4.3 Weak Inversion

138

(3)

3.4.4 Moderate Inversion

141

(1)

3.5 A "KB Control" Point of View

141

(6)

3.5.1 Fundamentals

141

(4)

3.5.2 The "Pinchoff Voltage"

145

(2)

3.6 Uses for Three-Terminal MOS Structures

147

(1)

References

148

(1)

Problems

149

(2)

Chapter 4 The Four-Terminal MOS Transistor

151

(92)

4.1 Introduction

151

(5)

4.2 Transistor Regions of Operation

156

(2)

4.3 Complete All-Region Model

158

(14)

4.4 Simplified All-Region Models

172

(9)

4.4.1 Linearizing the Depletion Region Charge

172

(1)

4.4.2 Body-Referenced Simplified All-Region Models

173

(3)

4.4.3 Source-Referenced Simplified All-Region Models

176

(1)

4.4.4 Charge Formulation of Simplified All-Region Models

177

(4)

4.5 Models Based on Quasi-Fermi Potentials

181

(2)

4.6 Regions of Inversion in Terms of Terminal Voltages

183

(3)

4.7 Strong Inversion

186

(18)

4.7.1 Complete Strong-Inversion Model

186

(6)

4.7.2 Body-Referenced Simplified Strong-Inversion Model

192

(1)

4.7.3 Source-Referenced Simplified Strong-Inversion Model

192

(11)

4.7.4 Model Origin Summary

203

(1)

4.8 Weak Inversion

204

(4)

4.8.1 Special Conditions in Weak Inversion

204

(1)

4.8.2 Body-Referenced Model

205

(1)

4.8.3 Source-Referenced Model

206

(2)

4.9 Moderate-Inversion and Single-Piece Models

208

(2)

4.10 Source-Referenced vs. Body-Referenced Modeling

210

(2)

4.11 Effective Mobility

212

(10)

4.12 Effect of Extrinsic Source and Drain Series Resistances

222

(2)

4.13 Temperature Effects

224

(2)

4.14 Breakdown

226

(2)

4.15 The p-Channel MOS Transistor

228

(2)

4.16 Enhancement-Mode and Depletion-Mode Transistors

230

(1)

4.17 Model Parameter Values, Model Accuracy, and Model Comparison

231

(2)

References

233

(7)

Problems

240

(3)

Chapter 5 Small-Dimension Effects

243

(86)

5.1 Introduction

243

(1)

5.2 Carrier Velocity Saturation

244

(9)

5.3 Channel Length Modulation

253

(6)

5.4 Charge Sharing

259

(12)

5.4.1 Introduction

259

(2)

5.4.2 Short-Channel Devices

261

(5)

5.4.3 Narrow-Channel Devices

266

(4)

5.4.4 Limitations of Charge-Sharing Models

270

(1)

5.5 Drain-Induced Barrier Lowering

271

(4)

5.6 Punchthrough

275

(2)

5.7 Combining Several Small-Dimension Effects into One Model—A Strong-Inversion Example

277

(3)

5.8 Hot Carrier Effects; Impact Ionization

280

(5)

5.9 Velocity Overshoot and Ballistic Operation

285

(3)

5.10 Polysilicon Depletion

288

(5)

5.11 Quantum Mechanical Effects

293

(2)

5.12 DC Gate Current

295

(7)

5.13 Junction Leakage; Band-to-Band Tunneling; GIDL

302

(3)

5.14 Leakage Currents—Particular Cases

305

(2)

5.15 The Quest for Ever-Smaller Devices

307

(9)

5.15.1 Introduction

307

(1)

5.15.2 Classical Scaling

308

(4)

5.15.3 Modem Scaling

312

(4)

References

316

(11)

Problems

327

(2)

Chapter 6 The MOS Transistor in Dynamic Operation-Large-Signal Modeling

329

(56)

6.1 Introduction

329

(1)

6.2 Quasi-Static Operation

330

(4)

6.3 Terminal Currents in Quasi-Static Operation

334

(7)

6.4 Evaluation of Intrinsic Charges in Quasi-Static Operation

341

(14)

6.4.1 Introduction

341

(1)

6.4.2 Strong Inversion

342

(6)

6.4.3 Moderate Inversion

348

(1)

6.4.4 Weak Inversion

348

(2)

6.4.5 All-Region Model

350

(2)

6.4.6 Depletion and Accumulation

352

(1)

6.4.7 Plots of Charges vs. VGS

353

(1)

6.4.8 Use of Intrinsic Charges in Evaluating the Terminal Currents

354

(1)

6.5 Transit Time under DC Conditions

355

(2)

6.6 Limitations of the Quasi-Static Model

357

(6)

6.7 Non-Quasi-Static Modeling

363

(8)

6.7.1 Introduction

363

(1)

6.7.2 The Continuity Equation

364

(1)

6.7.3 Non-Quasi-Static Analysis

365

(6)

6.8 Extrinsic Parasitics

371

(8)

6.8.1 Extrinsic Capacitances

371

(3)

6.8.2 Extrinsic Resistances

374

(4)

6.8.3 Temperature Dependence

378

(1)

6.8.4 Simplified Models

378

(1)

References

379

(4)

Problems

383

(2)

Chapter 7 Small-Signal Modeling for Low and Medium Frequencies

385

(88)

7.1 Introduction

385

(1)

7.2 A Low-Frequency Small-Signal Model for the Intrinsic Part

386

(28)

7.2.1 Introduction

386

(1)

7.2.2 Small-Signal Model for the Drain-to-Source Current

386

(4)

7.2.3 Small-Signal Model for the Gate and Body Currents

390

(3)

7.2.4 Complete Low-Frequency Small-Signal Model for the Intrinsic Part

393

(3)

7.2.5 Strong Inversion

396

(11)

7.2.6 Weak Inversion

407

(2)

7.2.7 Moderate Inversion

409

(1)

7.2.8 All-Region Models

409

(5)

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

414

(21)

7.3.1 Introduction

414

(1)

7.3.2 Intrinsic Capacitances

414

(21)

7.4 Including the Extrinsic Part

435

(1)

7.5 Noise

436

(20)

7.5.1 Introduction

436

(4)

7.5.2 White Noise

440

(10)

7.5.3 Flicker Noise

450

(6)

7.5.4 Noise in Extrinsic Resistances

456

(1)

7.5.5 Including Noise in Small-Signal Circuits

456

(1)

7.6 All-Region Models

456

(2)

References

458

(11)

Problems

469

(4)

Chapter 8 High-Frequency Small-Signal Models

473

(74)

8.1 Introduction

473

(1)

8.2 A Complete Quasi-Static Model for the Intrinsic Part

474

(18)

8.2.1 Complete Description of Intrinsic Capacitance Effects

474

(4)

8.2.2 Small-Signal Equivalent Circuit Topologies

478

(6)

8.2.3 Evaluation of Capacitances

484

(7)

8.2.4 Frequency Region of Validity

491

(1)

8.3 y-Parameter Models

492

(7)

8.4 Non-Quasi-Static Models

499

(25)

8.4.1 Introduction

499

(1)

8.4.2 A Non-Quasi-Static Strong-Inversion Model

500

(19)

8.4.3 Other Approximations and Higher-Order Models

519

(3)

8.4.4 Model Comparison

522

(2)

8.5 High-Frequency Noise

524

(5)

8.6 Considerations in MOSFET Modeling for RF Applications

529

(9)

References

538

(4)

Problems

542

(5)

Chapter 9 Substrate Nonuniformity and Other Structural Effects

547

(53)

9.1 Introduction

547

(1)

9.2 Ion Implantation and Substrate Nonuniformity

548

(3)

9.3 Substrate Transverse Nonuniformity

551

(20)

9.3.1 Preliminaries

551

(4)

9.3.2 Threshold Voltage

555

(9)

9.3.3 Drain Current

564

(2)

9.3.4 Buried-Channel Devices

566

(5)

9.4 Substrate Lateral Nonuniformity

571

(6)

9.5 Well Proximity Effect

577

(4)

9.6 Stress Effects

581

(3)

9.7 Statistical Variability

584

(8)

References

592

(6)

Problems

598

(2)

Chapter 10 Modeling for Circuit Simulation

600

(53)

10.1 Introduction

600

(1)

10.2 Types of Models

601

(5)

10.2.1 Models for Device Analysis and Design

601

(1)

10.2.2 Device Models for Circuit Simulation

602

(4)

10.3 Attributes of Good Compact Models

606

(2)

10.4 Model Formulation

608

(7)

10.4.1 General Consideration and Choices

609

(6)

10.5 Model Implementation in Circuit Simulators

615

(3)

10.6 Model Testing

618

(1)

10.7 Parameter Extraction

618

(17)

10.8 Simulation and Extraction for RF Applications

635

(3)

10.9 Common MOSFET Models Available in Circuit Simulators

638

(4)

10.9.1 BSIM

638

(2)

10.9.2 EKV

640

(1)

10.9.3 PSP

640

(2)

10.9.4 Other Models

642

(1)

References

642

(6)

Problems

648

(5)

Appendices

A Basic Laws of Electrostatics in One Dimension

653

(6)

B Quasi-Fermi Levels and Currents

659

(2)

C General Analysis of the Two-Terminal MOS Structure

661

(5)

D Careful Definitions for the Limits of Moderate Inversion

666

(3)

E General Analysis of the Three-Terminal MOS Structure

669

(5)

F Drain Current Formulation Using Quasi-Fermi Potentials

674

(4)

G Modeling Based on Pinchoff Voltage and Related Topics

678

(6)

H Evaluation of the Intrinsic Transient Source and Drain Currents

684

(3)

I Quantities Used in the Derivation of the Non-Quasi-Static y-Parameter Model

687

(3)

J Analysis of Buried-Channel Devices

690

(10)

K MOSFET Model Benchmark Tests

700

(13)

Index

713

Yannis Tsividis is Charles Batchelor Professor of Electrical Engineering at Columbia University. His work with MOS transistors began in 1975 as part of his Ph.D. work at the University of California, Berkeley, in the context of the design and fabrication of the first fully-integrated MOS operational amplifier. He is a Fellow of IEEE. Among his awards are the 1984 IEEE W. R. G. Baker Prize for the best IEEE publication and the 2003 IEEE International Solid-State Circuits Conference Outstanding Paper Award.

Colin McAndrew became involved with modeling semiconductor devices in 1987 and has contributed to the development of models for MOS, bipolar, and passive devices. He developed the backward-propagation-of-variation (BPV) technique for statistical modeling and has been a primary advocate of the use of Verilog-A and compilers for device modeling. He has a Ph.D. from the University of Waterloo, works at Freescale Semiconductor, and is a Fellow of the IEEE.

Operation and Modeling of the MOS Transistor 3rd edition [Pehme köide]

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