Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor-the key element of modern microelectronic chips. New to this Edition: * Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth, simple manner * Expanded discussion of small-dimension effects, including velocity saturation, drain-induced barrier lowering, ballistic operation, polysilicon depletion, quantum effects, gate tunneling current, and gate-induced drain leakage * Expanded discussion of small-signal modeling, including gate and substrate current modeling and flicker noise * New chapter on substrate nonuniformity and structural effects, discussing transversal and lateral (halo) doping nonuniformity, stress and well proximity effects, and statistical variability * A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design * Extensively updated bibliography * An accompanying website includes additional details not covered in the text, as well as model computer code
