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1 | (10) |
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1 | (1) |
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1.2 Brief history of CMOS image sensors |
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2 | (3) |
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1.3 Brief history of smart CMOS image sensors |
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5 | (3) |
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1.4 Organization of the book |
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8 | (3) |
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2 Fundamentals of CMOS image sensors |
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11 | (48) |
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11 | (1) |
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2.2 Fundamentals of photodetection |
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12 | (5) |
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2.2.1 Absorption coefficient |
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12 | (1) |
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2.2.2 Behavior of minority carriers |
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13 | (2) |
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2.2.3 Sensitivity and quantum efficiency |
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15 | (2) |
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2.3 Photodetectors for smart CMOS image sensors |
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17 | (12) |
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2.3.1 pn-junction photodiode |
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18 | (8) |
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26 | (1) |
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26 | (1) |
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2.3.4 Avalanche photodiode |
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27 | (1) |
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2.3.5 Photoconductive detector |
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27 | (2) |
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2.4 Accumulation mode in PDs |
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29 | (7) |
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2.4.1 Potential change in accumulation mode |
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30 | (1) |
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2.4.2 Potential description |
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30 | (2) |
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2.4.3 Behavior of photo-generated carriers in PD |
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32 | (4) |
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2.5 Basic pixel structures |
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36 | (6) |
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2.5.1 Passive pixel sensor |
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36 | (2) |
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2.5.2 Active pixel sensor, 3T-APS |
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38 | (2) |
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2.5.3 Active pixel sensor, 4T-APS |
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40 | (2) |
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42 | (6) |
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42 | (3) |
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45 | (1) |
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2.6.3 Analog-to-digital converters |
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46 | (2) |
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2.7 Basic sensor characteristics |
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48 | (3) |
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48 | (3) |
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51 | (1) |
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51 | (1) |
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51 | (2) |
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53 | (2) |
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2.10 Comparison between pixel architecture |
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55 | (1) |
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2.11 Comparison with CCDs |
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55 | (4) |
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3 Smart functions and materials |
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59 | (34) |
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59 | (1) |
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60 | (4) |
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60 | (2) |
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62 | (2) |
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64 | (2) |
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64 | (1) |
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65 | (1) |
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65 | (1) |
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66 | (12) |
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3.4.1 Pulse width modulation |
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68 | (2) |
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3.4.2 Pulse frequency modulation |
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70 | (8) |
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78 | (1) |
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3.6 Materials other than silicon |
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79 | (6) |
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3.6.1 Silicon-on-insulator |
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79 | (4) |
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3.6.2 Extending the detection wavelength |
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83 | (2) |
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3.7 Structures other than standard CMOS technologies |
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85 | (8) |
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85 | (1) |
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3.7.2 Integration with light emitters |
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86 | (2) |
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3.7.3 Color realization using nonstandard structures |
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88 | (5) |
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93 | (44) |
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93 | (1) |
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94 | (5) |
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4.2.1 Active reset for low light imaging |
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96 | (1) |
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4.2.2 PFM for low light imaging |
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96 | (1) |
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97 | (1) |
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4.2.4 Geiger mode APD for a smart CMOS image sensor |
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97 | (2) |
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99 | (1) |
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99 | (1) |
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100 | (8) |
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4.4.1 Principle of wide dynamic range |
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100 | (1) |
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101 | (1) |
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102 | (3) |
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105 | (2) |
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4.4.5 Saturation detection |
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107 | (1) |
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4.4.6 Diffusive brightness |
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108 | (1) |
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108 | (8) |
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4.5.1 Principles of demodulation |
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108 | (1) |
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109 | (2) |
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4.5.3 Method of two accumulation regions |
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111 | (5) |
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4.6 Three-dimensional range finder |
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116 | (7) |
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116 | (5) |
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121 | (2) |
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123 | (1) |
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123 | (6) |
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4.7.1 Maximum detection for target tracking |
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124 | (1) |
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4.7.2 Projection for target tracking |
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124 | (1) |
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4.7.3 Resistive network and other analog processing for target tracking |
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125 | (1) |
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4.7.4 Digital processing for target tracking |
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125 | (4) |
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4.8 Dedicated arrangement of pixel and optics |
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129 | (8) |
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4.8.1 Non-orthogonal arrangement |
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129 | (3) |
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132 | (5) |
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137 | (42) |
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137 | (1) |
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5.2 Information and communication applications |
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137 | (14) |
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138 | (6) |
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5.2.2 Optical wireless communication |
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144 | (7) |
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5.3 Biotechnology applications |
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151 | (14) |
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5.3.1 Smart CMOS image sensor with multi-modal functions |
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152 | (3) |
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5.3.2 Potential imaging combining MEMS technology |
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155 | (1) |
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5.3.3 Smart CMOS sensor for optical and electrochemical imaging |
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156 | (3) |
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5.3.4 Fluorescence detection |
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159 | (6) |
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165 | (14) |
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165 | (2) |
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167 | (12) |
A Tables of constants |
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179 | (2) |
B Illuminance |
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181 | (4) |
C Human eye and CMOS image sensors |
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185 | (4) |
D Fundamental characteristics of MOS capacitors |
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189 | (2) |
E Fundamental characteristics of MOSFET |
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191 | (4) |
F Optical format and resolution |
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195 | (2) |
References |
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197 | (44) |
Index |
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241 | |