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E-book: Optoelectronic Circuits in Nanometer CMOS Technology

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This book describes the newest implementations ofintegrated photodiodes fabricated in nanometer standard CMOS technologies. Italso includes the required fundamentals, the state-of-the-art, and the designof high-performance laser drivers, transimpedance amplifiers, equalizers, andlimiting amplifiers fabricated in nanometer CMOS technologies. This book showsthe newest results for the performance of integrated optical receivers, laserdrivers, modulator drivers and optical sensors in nanometer standard CMOStechnologies. Nanometer CMOS technologies rapidly advanced, enablingthe implementation of integrated optical receivers for high data rates ofseveral Giga-bits per second and of high-pixel count optical imagers andsensors. In particular, low cost silicon CMOS optoelectronic integratedcircuits became very attractive because they can be extensively applied toshort-distance optical communications, such as local area network, chip-to-chipand board-to-board interconnects as w

ell as to imaging and medical sensors.

Why Optoelectronic Circuits in Nanometer CMOS .- Optical Communications Fundamentals.- Basics of Photodiodes.- Discrete Photodiodes.- Integrated Photodiodes in Nanometer CMOS Technologies.- Transimpedance Amplifiers.- Equalizers.- Post Amplifiers.- Laser and Modulator Drivers.- Optoelectronic Circuits in Nanometer CMOS Technology.
1 Why Optoelectronic Circuits in Nanometer CMOS?
1(12)
1.1 Long-Haul Communication
2(1)
1.2 Fiber to the Home (FTTH)
3(1)
1.3 In-Home Network
4(1)
1.4 Optical Interconnects
5(2)
1.5 Optical Receivers
7(3)
1.6 Optical Sensors
10(3)
References
11(2)
2 Optical Communications Fundamentals
13(24)
2.1 Optical Communication Building Blocks
13(5)
2.1.1 Optical Transmitter
13(1)
2.1.2 Optical Receiver
14(1)
2.1.3 Optical Fiber
15(3)
2.2 Data Formats
18(2)
2.2.1 Binary Data Formats
18(1)
2.2.2 Multilevel Signaling
19(1)
2.3 DC Balance Code
20(1)
2.4 Eye Diagram
21(1)
2.5 Bit Error Rate (BER)
21(3)
2.6 Sensitivity
24(2)
2.7 Noise Models
26(2)
2.8 Bandwidth and Rise/Fall Times
28(1)
2.9 Intersymbol Interference (ISI)
29(1)
2.10 Jitter
30(1)
2.11 Nonlinearity
31(2)
2.12 Power Penalty
33(1)
2.13 Dynamic Range
33(4)
References
34(3)
3 Basics of Photodiodes
37(22)
3.1 Optical Absorption and Photocurrent Generation
37(2)
3.2 Carrier Drift and Diffusion
39(6)
3.2.1 Carrier Diffusion
40(2)
3.2.2 Carrier Drift
42(3)
3.3 Photodiode Capacitance
45(1)
3.4 Photodiode Speed
46(1)
3.5 Quantum Efficiency
47(5)
3.5.1 Internal Quantum Efficiency
48(1)
3.5.2 Optical Quantum Efficiency
48(4)
3.6 Photodiode Responsivity
52(2)
3.7 Photodiode Dark and Noise Currents
54(1)
3.8 Photodiode Small-Signal and Noise Equivalent Circuit Model
55(4)
References
57(2)
4 Discrete Photodiodes
59(8)
4.1 Discrete Photodiodes for Visible Light
59(2)
4.2 Discrete Photodiodes for Infrared Light
61(2)
4.3 External Photodetector Connected with Bond Wires
63(1)
4.4 External Photodetector Connected Using Flip-Chip Technique
63(4)
References
65(2)
5 Integrated Photodiodes in Nanometer CMOS Technologies
67(38)
5.1 Effects of Technology Selection and Scaling on Photodiode Performance
67(2)
5.2 Classical PN Junctions
69(10)
5.3 Double-Junction Photodiodes
79(12)
5.3.1 PW/DNW/P-Substrate Double Photodiode
79(4)
5.3.2 P+/NW/P-Sub Avalanche Double Photodiode
83(6)
5.3.3 P+/NW/P-Substrate Photodiode with Guard
89(2)
5.4 Finger Photodiodes
91(2)
5.5 PIN Photodiode
93(3)
5.6 Spatially Modulated Light Detector
96(2)
5.7 Triple Junction Photodetector
98(1)
5.8 Avalanche Photodiodes
99(2)
5.9 Comparison of Photodiodes
101(4)
References
103(2)
6 Transimpedance Amplifiers
105(58)
6.1 Transimpedance Gain, Bandwidth, and Noise
105(1)
6.2 Effect of Technology Scaling
106(1)
6.3 Simplest Preamplifier
107(1)
6.4 Open Loop TIAs
108(19)
6.4.1 Common Gate Input Stage
109(8)
6.4.2 Regulated-Cascode TIA
117(5)
6.4.3 Inverter Based Common-Drain Feedback TIA
122(5)
6.5 Shunt-Shunt Feedback TIA
127(21)
6.5.1 Frequency Response
129(2)
6.5.2 Noise Analysis of Shunt Feedback TIA
131(1)
6.5.3 Noise of Ideal TIA
132(1)
6.5.4 TIA with Common-Source Input Stage
133(1)
6.5.5 Multistage Inverter Based CMOS TIA
134(6)
6.5.6 Noise Canceling TIA
140(5)
6.5.7 Inverter Based Cascode TIA
145(3)
6.6 Differential TIA
148(1)
6.7 TIA with Gain Control
149(1)
6.8 TIA with Gain Compression
150(3)
6.9 Bandwidth Enhancement Techniques for TIAs
153(10)
6.9.1 Super-Gm
153(2)
6.9.2 Inductive Peaking
155(2)
6.9.3 Active Inductive Peaking
157(1)
6.9.4 Negative Capacitance
158(1)
References
159(4)
7 Equalizers
163(20)
7.1 Passive Equalizer
164(1)
7.2 Active Equalizer
165(1)
7.3 Source Degeneration
165(1)
7.4 Continuous Time Linear Equalizer (CTLE) with Multi-Shunt-Shunt Feedbacks
166(1)
7.5 Inductive Load Equalizer
167(2)
7.6 Adaptive Equalization
169(3)
7.6.1 Continuous Time Adaptive Equalizer
169(2)
7.6.2 Discrete Time Adaptive Equalizer
171(1)
7.7 Continuous Time FIR Filter Implementation
172(3)
7.8 Discrete Time FIR Filter Implementation
175(1)
7.9 Nonlinear Equalization
176(7)
7.9.1 Decision Feedback Equalizer (DFE)
177(2)
7.9.2 Maximum Likelihood Sequence Estimator (MLSE)
179(2)
References
181(2)
8 Post Amplifiers
183(16)
8.1 Noise
183(1)
8.2 Cascaded Gain Stages
184(1)
8.3 Bandwidth
185(1)
8.4 Differential Post Amplifier
186(1)
8.5 Amplifier with Automatic Gain Control
187(3)
8.6 Limiting Amplifier
190(1)
8.7 Offset Compensation
191(2)
8.8 Broad Band Amplifier Techniques
193(6)
8.8.1 Cherry-Hooper Amplifiers
194(1)
8.8.2 Interleaved Active Feedback
195(1)
8.8.3 ƒt Doubler
196(1)
References
197(2)
9 Laser and Modulator Drivers
199(18)
9.1 LEDs, Laser Diodes, and VCSELs
199(3)
9.1.1 Small-Signal Model
201(1)
9.2 Laser and Modulator Driver
202(1)
9.3 Laser Driver Specifications
203(3)
9.3.1 Rise and Fall Times
203(1)
9.3.2 Modulation Current
203(1)
9.3.3 Extinction Ratio
204(1)
9.3.4 Turn-on Delay (ToD)
205(1)
9.3.5 Output Voltage (Compliance Voltage)
206(1)
9.4 Laser Driver Circuit Design
206(7)
9.4.1 Predriver
206(1)
9.4.2 Output Driver
206(2)
9.4.3 High Voltage Laser Driver
208(5)
9.5 Laser Automatic Power Control
213(1)
9.6 Modulator Drivers
214(3)
9.6.1 External Modulator
214(1)
9.6.2 Modulator Driver Circuitry
215(1)
References
216(1)
10 Optoelectronic Circuits in Nanometer CMOS Technology
217(24)
10.1 Fully Integrated Optical Receivers
217(8)
10.1.1 180 nm CMOS Fully Integrated Optical Receiver
218(2)
10.1.2 65 nm CMOS Fully Integrated Optical Receiver
220(1)
10.1.3 40 nm CMOS Fully Integrated Optical Receiver
221(4)
10.2 Infrared Optical Receivers with External Photodiode
225(9)
10.2.1 Infrared Optical Receiver in 90 nm CMOS with External Photodiode
225(5)
10.2.2 Infrared Optical Receivers in 40 nm CMOS with External Photodiode
230(4)
10.3 Optical Sensors
234(7)
10.3.1 2D Image Sensors
234(1)
10.3.2 3D Image Sensors
235(3)
10.3.3 Medical Sensors
238(1)
References
239(2)
Index 241
Mohamed Atef received the B.Sc. and M.Sc. degrees in Electrical Engineering, Electronics and Communications from Assiut University, Egypt, in 2000 and 2005 respectively. From 2006 to 2007 he was in Czech Technical University in Prague, Department of Microelectronics, working on the improvement of optical properties of quantum dots. He received the Ph.D. from Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering in 2010 then served as a post-doctoral researcher up to 2012. Since 2010 he is an assistant professor at Electrical Engineering Dept., Assiut University, Egypt. His current research interests are in the area of optoelectronic integrated circuit and communications over plastic optical fiber. He is author of the Springer book Optical Communication over Plastic Optical Fibers: Integrated Optical Receiver Technology. Furthermore, he is author and co -author of around 35 scientific publications. Since 2012 he is senior member IEEE. />Dr. Horst Zimmermann, received the diploma in Physics in 1984 from the University of Bayreuth, Germany, and the Dr.-Ing. degree in the Fraunhofer Institute for Integrated Circuits (IIS-B), Erlangen, Germany in 1991. Then, Dr. Zimmermann was an Alexander-von-Humboldt Research-Fellow at Duke University, Durham, N.C., working on diffusion in Si, GaAs, and InP until 1992. In 1993, he joined the Chair for Semiconductor Electronics at Kiel University, Kiel, Germany, where he lectured optoelectronics and worked on optoelectronic integration. Since 2000 he is full professor for Electronic Circuit Engineering at Vienna University of Technology, Vienna, Austria. His main interests are in design and characterization of analog and nanometer CMOS circuits as well as optoelectronic integrated CMOS and BiCMOS circuits. He is author of the Springer books 'Integrated Silicon Optoelectronics' and 'Silicon Optoelectronic Integrated Circuits' as well as coauthor of Highly Sensitive Optical Receiversand Optical Communication over Plastic Optical Fibers. In addition he is author and co-author of more than 400 publications. In 2002 he became Senior Member IEEE.