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E-raamat: Advances in Imaging and Electron Physics

Series edited by (Senior Scientist, French National Centre for Research (CNRS), Toulouse, France), Series edited by (Founder-President of the European Microscopy Society and Fellow, Microscopy and Optical Societies of America; member of the editorial boards of several mi)
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Advances in Imaging and Electron Physics, Volume 219, merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy and the computing methods used in all these domains.

  • Contains contributions from leading authorities on the subject matter
  • Informs and updates on the latest developments in the field of imaging and electron physics
  • Provides practitioners interested in microscopy, optics, image processing, mathematical morphology, electromagnetic fields, electrons and ion emission with a valuable resource
  • Features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing
Contributors ix
Preface xi
1 Introduction to strain characterization methods in Transmission Electron Microscopy
1(38)
Alexandre Pofelski
1 Direct strain characterization methods
2(18)
1.1 Origin of direct strain characterization in a TEM
2(2)
1.2 Quantitative characterization of strain as a property of matter
4(1)
1.3 Development of direct strain characterization techniques
5(14)
1.4 Inherent limit of direct strain characterization method
19(1)
2 Indirect strain characterization methods
20(12)
2.1 Nano Beam Electron (Precession) Electron Diffraction (NB(P)ED)
20(4)
2.2 Interferometry
24(8)
3 Conclusions of the chapter
32(1)
References
33(6)
2 Moire sampling in Scanning Transmission Electron Microscopy
39(40)
Alexandre Pofelski
1 Signal sampling and recovery
40(18)
1.1 Discrete evaluation of a continuous function
40(2)
1.2 Recovery of a bandwidth limited function
42(6)
1.3 Recovery of an undersampled sparse periodic bandwidth limited function
48(10)
2 Sampling in STEM
58(9)
2.1 2D sampling of a single crystal material
59(3)
2.2 High Resolution STEM imaging
62(1)
2.3 STEM Moire interferometry (STEM Moire sampling)
63(4)
3 Recovery of the crystal lattices from a STEM Moire hologram
67(8)
3.1 STEM Moire hologram formation in Fourier space
68(1)
3.2 Consideration of strain and sparsity
69(2)
3.3 Determination of the sampling vectors for each Moire wave vector
71(1)
3.4 Application of the recovery process
72(3)
4 Conclusions of the chapter
75(1)
References
76(3)
3 Scanning Transmission Electron Microscopy Moire sampling Geometrical Phase Analysis (STEM Moire GPA)
79(54)
Alexandre Pofelski
1 Introduction of STEM Moire GPA
80(8)
1.1 2D strain field from a STEM Moire hologram
81(3)
1.2 Implementation of STEM Moire GPA
84(4)
2 Materials and methods
88(5)
2.1 Calibration sample
88(1)
2.2 Sample preparation
89(1)
2.3 Sample observation
90(2)
2.4 Processing methods
92(1)
3 Strain characterization results on the calibrated sample
93(13)
3.1 HR-STEM GPA
93(3)
3.2 GPA on reconstructed electron micrograph (REC-GPA)
96(5)
3.3 SMG
101(3)
3.4 Discussion
104(2)
4 Experimental considerations of STEM Moire GPA
106(14)
4.1 Effect of the pixel spacing
107(5)
4.2 Effect of the scanning rotation
112(3)
4.3 Constraints from GPA
115(1)
4.4 Design of the SMG experimental protocol
116(4)
5 Application of the SMG protocol on the calibration sample
120(5)
5.1 Determination of suitable sampling ranges
121(1)
5.2 Comparison of SMG results using different sampling parameters
122(1)
5.3 Discussion
122(3)
6 Conclusions of the chapter
125(1)
Appendix 3.A Analytical bi-axial fully strained model
126(4)
3.A.1 Bi-axial fully strained model and Hook's law
126(1)
3.A.2 Expression of the strain tensor with the lattice mismatch
127(1)
3.A.3 Transformation from base B0 to B1
128(2)
3.A.4 Hook's law in the base B1
130(1)
References
130(3)
4 Performance of Scanning Transmission Electron Microscopy Moire Sampling Geometrical Phase Analysis
133(54)
Alexandre Pofelski
1 Qualitative assessment of accuracy
134(27)
1.1 SMG comparison with Dark-Field Electron Holography (DFEH)
135(4)
1.2 FEM strain distribution simulation
139(15)
1.3 Comparison between FEM simulation and experimental results
154(6)
1.4 Conclusions on the SMG accuracy
160(1)
2 Qualitative assessment of resolution and precision
161(15)
2.1 Link between resolution and precision in GPA
162(8)
2.2 Application to SMG
170(6)
2.3 Conclusions on the resolution and precision of SMG
176(1)
3 Limits of STEM Moire GPA
176(6)
3.1 Theoretical limits
177(2)
3.2 Practical limits
179(3)
4 Conclusions of the chapter
182(1)
References
183(4)
5 Applications of Scanning Transmission Electron Microscopy Moire Sampling Geometrical Phase Analysis
187(24)
Alexandre Pofelski
1 Basic application of SMG
188(12)
1.1 Materials
188(2)
1.2 HR-STEM GPA
190(2)
1.3 STEM Moire GPA
192(4)
1.4 Qualitative STEM Moire interferometry
196(4)
2 Strategic application of SMG
200(8)
2.1 Materials
200(2)
2.2 Large FOV SMG strain maps to maximize sensitivity
202(2)
2.3 Strategy to limit the contribution of the periodic patterned noise
204(4)
3 Conclusions of the chapter
208(1)
References
209(2)
6 Quasi-analytical modelling of charged particle ensembles in neutral gas flow and electric fields
211(18)
Roman S. Ablizen
Mikhail A. Monastyrskiy
Anatoly I. Neishtadt
Alexander A. Makarov
Dmitry E. Grinfeld
Mikhail G. Skoblin
1 Introduction and the problem statement
211(2)
2 The case of constant velocities
213(3)
3 The case of variable velocities
216(1)
4 Numerical experiments
217(1)
5 Space charge contribution
218(8)
6 Conclusion
226(1)
References
227(2)
7 Superconducting electron lenses
229(36)
David F. Hardy
1 Introduction
229(2)
2 Superconducting materials
231(6)
2.1 General properties
231(1)
2.2 High field, high current superconductors
232(5)
3 The design of magnetic electron lenses
237(6)
3.1 General principles
237(2)
3.2 Assessment of objective lens designs
239(4)
4 Superconducting electron lenses
243(18)
4.1 Lenses without pole pieces
243(9)
4.2 Lenses with pole pieces
252(9)
5 Conclusions
261(2)
5.1 Future prospects in electron microscopy
261(2)
Acknowledgments
263(1)
References
263(2)
8 Lorentz microscopy or electron phase microscopy of magnetic objects
265(58)
R.H. Wade
1 General introduction
266(6)
1.1 Aims of this chapter
266(2)
1.2 Notions of resolution
268(1)
1.3 Notions of image formation
269(3)
2 The interaction of an electron with a magnetic field
272(13)
2.1 The classical Lorentz force
272(1)
2.2 The semi-classical approximation to the Schrodinger equation
273(2)
2.3 The magnetic phase object
275(3)
2.4 The Aharanov and Bohm effect
278(7)
3 Calculation of the image intensity
285(9)
3.1 The Huygens-Fresnel principle
285(1)
3.2 Kirchhoff diffraction integral
286(1)
3.3 The diffraction theory
286(1)
3.4 Fraunhofer and Fresnel diffraction
287(3)
3.5 The stationary phase approximation to the diffraction integral
290(1)
3.6 The classical intensity
290(1)
3.7 Comparison of different results
291(1)
3.8 Reduced parameters in the image intensity equations
292(2)
4 Validity criteria for the pseudo-classical approximations
294(18)
4.1 Generalities on the correspondence limits of wave optics and wave mechanics
294(3)
4.2 The fluxon criterion
297(1)
4.3 The generalized criterion
298(9)
4.4 Physical manifestations of the fluxon
307(5)
5 Image transfer theory
312(6)
5.1 Basic theory
312(2)
5.2 Application to small deflections
314(1)
5.3 Magnetization ripple
315(3)
6 Remarks on domain wall measurements
318(2)
7 Conclusions
320(1)
Acknowledgments
321(1)
References
321(2)
Index 323
Dr Martin H˙tch, serial editor for the book series Advances in Imaging and Electron Physics (AIEP)”, is a senior scientist at the French National Centre for Research (CNRS) in Toulouse. He moved to France after receiving his PhD from the University of Cambridge in 1991 on Quantitative high-resolution transmission electron microscopy (HRTEM)”, joining the CNRS in Paris as permanent staff member in 1995. His research focuses on the development of quantitative electron microscopy techniques for materials science applications. He is notably the inventor of Geometric Phase Analysis (GPA) and Dark-Field Electron Holography (DFEH), two techniques for the measurement of strain at the nanoscale. Since moving to the CEMES-CNRS in Toulouse in 2004, he has been working on aberration-corrected HRTEM and electron holography for the study of electronic devices, nanocrystals and ferroelectrics. He was laureate of the prestigious European Microscopy Award for Physical Sciences of the European Microscopy Society in 2008. To date he has published 130 papers in international journals, filed 6 patents and has given over 70 invited talks at international conferences and workshops. Peter Hawkes obtained his M.A. and Ph.D (and later, Sc.D.) from the University of Cambridge, where he subsequently held Fellowships of Peterhouse and of Churchill College. From 1959 1975, he worked in the electron microscope section of the Cavendish Laboratory in Cambridge, after which he joined the CNRS Laboratory of Electron Optics in Toulouse, of which he was Director in 1987. He was Founder-President of the European Microscopy Society and is a Fellow of the Microscopy and Optical Societies of America. He is a member of the editorial boards of several microscopy journals and serial editor of Advances in Electron Optics.
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