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E-raamat: Advances in Research and Development: Modeling of Film Deposition for Microelectronic Applications

Series edited by (Georgia State University, Atlanta, U.S.A.), Series edited by (RCA Laboratories, Princeton, New Jersey)
  • Formaat: PDF+DRM
  • Sari: Thin Films
  • Ilmumisaeg: 14-Nov-1997
  • Kirjastus: Academic Press Inc
  • Keel: eng
  • ISBN-13: 9780080542904
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  • Formaat: PDF+DRM
  • Sari: Thin Films
  • Ilmumisaeg: 14-Nov-1997
  • Kirjastus: Academic Press Inc
  • Keel: eng
  • ISBN-13: 9780080542904

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Surveys recent research based on a variety of layered heterostructure devices formed in Group IV (Si and Si-Ge) and Group III-V semiconductors. Examples treated include Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in SI and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emission. Specific topics include GexSi1-x epitaxial layer growth and application to integrated circuits, platinum silicide internal emission infrared imaging arrays, and thin film epitaxial layers on silicon for the detection of infrared signals. Annotation c. by Book News, Inc., Portland, Or.

Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.
Contributors ix Preface xi GexSi1-x Epitaxial Layer Growth and Application to Integrated Circuits David W. Greve Introduction 2(1) Gex Si1-x Heterojunctions---General Considerations 3(3) Growth by Molecular Beam Epitaxy 6(15) MBE Systems 7(2) Surface Cleaning and Preparation 9(1) Germanium Incorporation and Abruptness 10(2) p-type Doping 12(2) n-type Doping 14(1) Incorporation of Adatoms and Growth Temperature Limits 15(6) Gas Sources 21(1) Growth by Chemical Vapor Deposition 21(30) Low-Temperature Growth 22(1) Growth Systems 23(4) Surface Reactions 27(10) Kinetics of Layer Growth---Hydride Reactants 37(4) Kinetics of Layer Growth---Dichlorosilane 41(2) Transition Abruptness 43(1) Minimum Growth Temperature 44(1) Surface Preparation 44(6) Overview/Summary 50(1) Application to Heterojunction Bipolar Transistors 51(17) Operation of the HBT 51(3) Early Reports of HBTs 54(2) MBE-Grown HBT Process 56(3) UHV/CVD-Grown HBT Process 59(5) Profile Design for the UHV/CVD HBT 64(4) HBT Future Prospects 68(1) The GexSi1-x Channel MOSFET 68(5) Conclusions and Future Prospects 73(11) Acknowledgments 74(1) References 74(10) Platinum Silicide Internal Emission Infrared Imaging Arrays Freeman D. Shepherd Introduction 84(4) Staring-Mode Operation 84(1) Requirements Imposed by Thermal Infrared Signals 84(2) Early Efforts Leading to Current PtSi IR Camera Technology 86(2) The Internal Emission Process 88(12) Internal Photoemission 88(4) Thermionic Emission (Dark Current) 92(1) Internal Field Emission 93(7) State of the Art of Platinum Silicide Detectors and Arrays 100(6) PtSi Spectral Response 100(2) Fowler Emission Efficiency 102(2) Array Response Uniformity 104(1) Excess Low-Frequency Noise 104(1) Array Parameters 104(1) Infrared Cameras 105(1) Future of Platinum Silicide Detector and Sensor Development 106(5) Array Size 106(1) Pixel Dimensions 106(1) Optical Absorption in the Silicide Electrode 106(1) Detector Fill Factors 107(1) Industrial vs. Military Sensor Requirements 107(1) Improvement of Emission Efficiency 107(1) Extension of Cutoff Wavelength 108(2) General Observations 110(1) Summary 111(5) References 111(5) Thin Film Epitaxial Layers on Silicon for the Detection of Infrared Signals Paul W. Pellegrini Jorge R. Jimenez Introduction 116(1) Infrared Bands, Detectors, and Materials 117(24) Infrared Spectral Bands 117(3) Detectors of Infrared Radiation 120(7) Material Considerations for LWIR Detection 127(8) Summary of PtSi Detector Basics 135(6) Group-IV Epitaxial Devices for Infrared Detectors 141(21) Delta-Doped PtSi/Si Detectors 141(2) Si-Homojunction Detectors 143(1) SiGe/Si Heterojunction Internal Photoemission (HIP) Detectors 144(9) Silicide/SiGe Schottky Detectors 153(8) Detectors Involving Epitaxial Silicides 161(1) Growth and Fabrication of Si-Based Infrared Detector Structures 162(6) Doping and Temperature 162(1) Surface Preparation and Cleaning 163(1) Uniformity 164(1) Silicide/SiGe Fabrication 165(3) Conclusion 168(6) References 168(6) III-V Quantum-Well Structures for High-Speed Electronics E. R. Brown K. A. McIntosh Background on Quantum-Well Infrared Detectors 174(4) Direct Detection 174(1) Heterodyne Detection 175(3) Quantum-Well Detector Design and Intersubband Absorption 178(10) Quantum-Well Energy Levels 178(6) Epitaxial Growth 184(1) Intersubband Absorption Measurement Techniques 185(2) Intersubband Absorption Results 187(1) MQW Detector Fabrication and DC Response Characteristics 188(8) Fabrication and Packaging 188(1) Dark Current 189(1) Spectral and Absolute Responsivity 190(4) Photoconductive Gain 194(1) External Quantum Efficiency 195(1) Electrical Bandwidth and Optical-Heterodyne Experiments 196(8) Photoelectron Generation-Recombination Noise Technique 196(2) Diode-Laser Mixing Technique 198(1) Microwave Rectification Technique 199(1) Discussion of Bandwidth and Lifetime 200(1) Heterodyne Sensitivity Measurement Technique 201(1) Heterodyne Sensitivity Results 202(2) Applications 204(7) Instrumental Resolution and Sensitivity 205(2) High-Resolution Molecular Spectroscopy 207(3) Long-Range, High-Data-Rate Communications 210(1) Improvements in MQW Heterodyne Detectors 211(7) Enhancement of External Quantum Efficiency 211(3) Design of Detectors Having Lifetime-Limited Electrical Bandwidth 214(2) References 216(2) Quantum-Well Devices for Infrared Emission A. G. U. Perera J.-W. Choe M. H. Francombe Introduction and Background 218(2) Quantum Wells in Interband-Type IR Sources 220(18) Role of Size and Strain Effects 220(8) MQW Heterostructures for Midwave IR 228(10) Intersubband Transition Processes for IR Emission 238(24) Background and Summary 238(2) Radiative Transitions and Population Inversion 240(3) FIR Emission from MQW Structures 243(4) Quantum Efficiency of the Cascade Process 247(5) Photon Wave Function in the Superlattice 252(4) Early LWIR Emission Results 256(6) Graded-Gap Injection Structures for MWIR and LWIR Emission 262(12) First 5-um Intersubband IR Emission 263(3) Development of Quantum Cascade Laser 266(8) Recent Trends, Limitations, and Application Potential 274(12) References 282(4) Appendix 286(13) Sequential Resonant Tunneling 286(5) Physics of Resonant Tunneling 291(1) Energy and Lifetime from Complex Energy Method 291(8) Author Index 299(6) Subject Index 305