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E-raamat: Carbon Nanotube and Graphene Nanoribbon Interconnects

  • Formaat: 196 pages
  • Ilmumisaeg: 19-Dec-2017
  • Kirjastus: CRC Press Inc
  • Keel: eng
  • ISBN-13: 9781482239508
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  • Formaat: 196 pages
  • Ilmumisaeg: 19-Dec-2017
  • Kirjastus: CRC Press Inc
  • Keel: eng
  • ISBN-13: 9781482239508

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An Alternative to Copper-Based Interconnect TechnologyWith an increase in demand for more circuit components on a single chip, there is a growing need for nanoelectronic devices and their interconnects (a physical connecting medium made of thin metal films between several electrical nodes in a semiconducting chip that transmit signals from one point to another without any distortion). Carbon Nanotube and Graphene Nanoribbon Interconnects explores two new important carbon nanomaterials, carbon nanotube (CNT) and graphene nanoribbon (GNR), and compares them with that of copper-based interconnects. These nanomaterials show almost 1,000 times more current-carrying capacity and significantly higher mean free path than copper. Due to their remarkable properties, CNT and GNR could soon replace traditional copper interconnects. Dedicated to proving their benefits, this book covers the basic theory of CNT and GNR, and provides a comprehensive analysis of the CNT- and GNR-based VLSI interconnects at nanometric dimensions.Explore the Potential Applications of CNT and Graphene for VLSI CircuitsThe book starts off with a brief introduction of carbon nanomaterials, discusses the latest research, and details the modeling and analysis of CNT and GNR interconnects. It also describes the electrical, thermal, and mechanical properties, and structural behavior of these materials. In addition, it chronicles the progression of these fundamental properties, explores possible engineering applications and growth technologies, and considers applications for CNT and GNR apart from their use in VLSI circuits.Comprising eight chapters this text:Covers the basics of carbon nanotube and graphene nanoribbonDiscusses the growth and characterization of carbon nanotube and graphene nanoribbonPresents the modeling of CNT and GNR as future VLSI interconnectsExamines the applicability of CNT and GNR in terms of several analysis worksAddresses the timing and frequency response of the CNT and GNR interconnectsExplores the signal integrity analysis for CNT and GNR interconnects Models and analyzes the applicability of CNT and GNR as power interconnectsConsiders the future scope of CNT and GNRBeneficial to VLSI designers working in this area, Carbon Nanotube and Graphene Nanoribbon Interconnects provides a complete understanding of carbon-based materials and interconnect technology, and equips the reader with sufficient knowledge about the future scope of research and development for this emerging topic.

Arvustused

"The book, Caron Nanotube and Graphene Nanoribbon Interconnects, authored by Drs. Debapraad Das and Hafizur Rahaman serves as a good source of material on CNT and GNR interconnects for readers who wish to get into this area and also for practicing engineers who would like to be updated in advances of this field." Prof. Ashok Srivastava, Louisiana State University, Baton Rouge, USA

"Mathematical analysis included in each and every chapter is the main strength of the materials. ... The book is very precise and useful for those who are working in this area. ... highly focused, very compact, and easy to apply. ... This book depicts a detailed analysis and modelling of carbon nanotube and graphene nanoribbon interconnects. The book also covers the electrical circuit modelling of carbon nanotubes and graphene nanoribbons." Prof. Chandan Kumar Sarkar, Jadavpur University, Kolkata, India

Preface xi
Acknowledgments xiii
Authors xv
1 Introduction to Allotropes of Carbon Nanomaterials
1(8)
1.1 Introduction to Carbon Nanotube and Graphene Nanoribbon
1(1)
1.2 Graphene
1(1)
1.3 Graphene Nanoribbon
2(1)
1.4 Carbon Nanotube
3(3)
1.4.1 Single-Walled CNT
5(1)
1.4.2 Multiwalled CNT
5(1)
1.5 Properties of CNT
6(3)
2 Growth of Carbon Nanotubes and Graphene Nanoribbon
9(8)
2.1 Introduction
9(1)
2.2 Works Related to CNT and GNR Technologies
9(3)
2.3 Works on Modeling and Analysis of CNT- and GNR-Based Interconnects
12(3)
2.4 Works Related to CNT- and GNR-Based Field-Effect Transistors
15(1)
2.5 Practical Circuits
16(1)
2.6 Summary
16(1)
3 Modeling of CNT and GNR Interconnects
17(24)
3.1 Introduction
17(1)
3.2 Single-Walled CNT
18(3)
3.3 Multiwalled CNT
21(4)
3.3.1 Modeling of Conducting Channels
22(1)
3.3.2 Resistance of Individual Shell
23(1)
3.3.3 Inductance of Individual Shell
23(1)
3.3.4 Capacitance of Individual Shell
24(1)
3.3.5 RLC of MWCNT
24(1)
3.4 SWCNT Bundle
25(3)
3.4.1 Resistance of a Bundle
26(1)
3.4.2 Inductance of a Bundle
26(2)
3.4.3 Capacitance of a Bundle
28(1)
3.5 MWCNT Bundle
28(1)
3.6 Modeling of Graphene Nanoribbon
29(3)
3.7 Modeling of Copper Interconnects
32(2)
3.7.1 Resistance of Copper Interconnects
32(1)
3.7.2 Inductance of Copper Interconnects
33(1)
3.7.3 Capacitance of Copper Interconnects
34(1)
3.8 Interconnect Parameters
34(6)
3.9 Summary
40(1)
4 Timing Analysis in CNT Interconnects
41(34)
4.1 Introduction
41(1)
4.2 CNT Model with PTV Variations
42(22)
4.2.1 Modeling Process Variation
42(11)
4.2.2 Modeling Temperature Variation
53(4)
4.2.3 Modeling Voltage Variation
57(2)
4.2.4 Modeling and Analysis Based on Random Distribution of SWCNTs
59(1)
4.2.5 Results and Discussion
60(4)
4.3 Performance Study at the System Level
64(9)
4.3.1 Design of 4 x 4 Array Multiplier with MWCNT Interconnects
64(1)
4.3.2 Basic Design Block
65(1)
4.3.3 Design Methodology
66(1)
4.3.4 Layout Design
66(2)
4.3.5 Extraction of RLC Parameters
68(1)
4.3.6 Simulation Results
68(5)
4.4 Summary
73(2)
5 RF and Stability Analyses in CNT and GNR Interconnects
75(26)
5.1 Introduction
75(1)
5.2 RF Performance Analysis
75(7)
5.2.1 Frequency-Dependent Models of Resistance and Inductance for Copper Wire
76(2)
5.2.2 Frequency-Dependent CNT Model
78(2)
5.2.3 Frequency-Dependent GNR Model
80(2)
5.3 Frequency Domain Response of CNT Interconnects
82(1)
5.4 RF Simulation Setup
83(1)
5.5 RF Simulation Results and Discussions
84(7)
5.6 Frequency Domain Response of GNR Interconnects
91(2)
5.7 Stability of CNT and GNR Interconnects
93(6)
5.7.1 Stability Analysis Model of CNT and GNR
93(1)
5.7.2 Results of Stability Analysis in CNT and GNR
94(5)
5.8 Summary
99(2)
6 Signal Integrity in CNT and GNR Interconnects
101(20)
6.1 Introduction
101(1)
6.2 Crosstalk Analysis in Coupled Interconnect System
102(2)
6.2.1 Simulation Model
103(1)
6.3 Gate Oxide Reliability Model
104(1)
6.4 Results of Gate Oxide Reliability Analysis for CNT-Based Interconnects
105(3)
6.5 Analysis for Different Configurations of MWCNT-Based Interconnects
108(1)
6.6 Discussions on Noise and Overshoot/Undershoot Analysis
109(2)
6.7 Analysis of GNR Interconnects
111(2)
6.8 Analysis of Delay Uncertainty due to Crosstalk
113(7)
6.8.1 Crosstalk Delay Analysis in CNT and Copper Interconnects
114(1)
6.8.2 Simulation Results and Discussions
115(3)
6.8.3 Comparative Study
118(1)
6.8.4 Discussions on Crosstalk Delay Results
119(1)
6.9 Summary
120(1)
7 Applicability of CNT and GNR as Power Interconnects
121(26)
7.1 Introduction
121(1)
7.2 IR Drop Analysis in CNT-Based PDN
122(2)
7.3 SSN Analysis in GNR and CNT-Based PDN
124(1)
7.4 Simulation Results
125(13)
7.4.1 IR Drop Analysis Results in CNT Power Nets
125(4)
7.4.2 Comparison with GNR Power Interconnects
129(1)
7.4.3 SSN and IR Drop Analyses Results in GNR Power Nets
130(8)
7.5 IR Drop-Induced Delay-Fault Modeling
138(6)
7.5.1 Analysis of Delay-Fault
138(3)
7.5.2 Simulation Results
141(3)
7.6 Summary
144(3)
8 Future Applications of CNT and GNR
147(4)
8.1 Introduction
147(1)
8.2 Applications of CNT and GNR
147(2)
8.3 Summary
149(2)
References 151(14)
Index 165
Dr. Debaprasad Das received a bachelors (honors) degree in physics in 1995, a bachelors degree in radio physics and electronics in 1998, a masters degree in electronics and telecommunication engineering in 2006, and a PhD in engineering in 2013 from the Vidyasagar University, University of Calcutta, Jadavpur University, and Bengal Engineering and Science University, Shibpur, respectively. Presently, he is working as an associate professor and head in the Department of Electronics and Telecommunication Engineering, Assam University, Silchar, India. He has authored or coauthored several research papers in national and international journals and conferences, and authored four books.







Dr. Hafizur Rahaman

received a bachelors degree in electrical engineering from Bengal Engineering College, India, in 1986, and a masters degree in electrical engineering and a PhD in computer science and engineering from Jadavpur University, Kolkata, India, in 1988 and 2003, respectively. He is a full professor of the Indian Institute of Engineering Science and Technology, Shibpur, West Bengal, India. His research interests include VLSI design and test, CAD for micro-fluidic biochips, emerging nanotechnologies, and reversible computing. He has published more than 280 research articles in archival journals and refereed conference proceedings.