This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic...Loe edasi...
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic...Loe edasi...
(Ilmumisaeg: 14-May-2019, PDF+DRM, Kirjastus: Taylor & Francis Ltd, ISBN-13: 9780429862533)
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material system...Loe edasi...
(Ilmumisaeg: 14-May-2019, EPUB+DRM, Kirjastus: Taylor & Francis Ltd, ISBN-13: 9780429862526)
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material system...Loe edasi...
