(Ilmumisaeg: 04-Oct-2021, EPUB+DRM, Kirjastus: Taylor & Francis Ltd, ISBN-13: 9781000455762)
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure...Loe edasi...
(Ilmumisaeg: 04-Oct-2021, PDF+DRM, Kirjastus: Taylor & Francis Ltd, ISBN-13: 9781000455748)
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure...Loe edasi...
(Ilmumisaeg: 04-Dec-2012, EPUB+DRM, Kirjastus: Taylor & Francis Inc, ISBN-13: 9781040195567)
Drawing on the authors practical work from the last 20 years, Techniques in High Pressure Neutron Scattering is one of the first books to gather recent methods that allow neutron scattering well beyond 10 GPa. The author shows how neutron scattering...Loe edasi...
(Ilmumisaeg: 04-Dec-2012, PDF+DRM, Kirjastus: Taylor & Francis Inc, ISBN-13: 9781439835630)
Drawing on the authors practical work from the last 20 years, Techniques in High Pressure Neutron Scattering is one of the first books to gather recent methods that allow neutron scattering well beyond 10 GPa. The author shows how neutron scattering...Loe edasi...
