Preface |
|
xv | |
|
Introduction to analog CMOS design |
|
|
1 | (25) |
|
|
1 | (2) |
|
The need for analog design |
|
|
1 | (1) |
|
Tradeoffs in analog design |
|
|
2 | (1) |
|
The Importance of component modeling |
|
|
2 | (1) |
|
Bipolar and metal-oxide-semiconductor field-effect transistors |
|
|
3 | (13) |
|
|
3 | (2) |
|
Bipolar junction transistors |
|
|
5 | (2) |
|
MOS field-effect transistors |
|
|
7 | (7) |
|
Important differences between BJTs and MOSFETs |
|
|
14 | (2) |
|
Analog bipolar and MOS integrated circuits |
|
|
16 | (5) |
|
Analysis and design of integrated circuits |
|
|
16 | (1) |
|
Design of common-emitter and common-source amplifiers |
|
|
17 | (4) |
|
|
21 | (3) |
|
|
24 | (2) |
|
Advanced MOS transistor modeling |
|
|
26 | (62) |
|
Fundamentals of the MOSFET model |
|
|
26 | (19) |
|
Electrons and holes in semiconductors |
|
|
26 | (2) |
|
The two-terminal MOS structure |
|
|
28 | (3) |
|
Accumulation, depletion, and inversion (for p-type substrates) |
|
|
31 | (1) |
|
The small-signal equivalent circuit of the two-terminal MOS (for p-type substrates) |
|
|
32 | (2) |
|
The three-terminal MOS structure and the unified charge-control model (UCCM) |
|
|
34 | (4) |
|
|
38 | (1) |
|
The Pao-Sah exact I-V model |
|
|
39 | (2) |
|
A charge-sheet formula for the current |
|
|
41 | (1) |
|
A charge-control compact model |
|
|
41 | (1) |
|
|
42 | (3) |
|
A design-oriented MOSFET model |
|
|
45 | (12) |
|
Forward and reverse components of the drain current |
|
|
45 | (3) |
|
Universal dc characteristics |
|
|
48 | (3) |
|
MOSFET operation in weak and strong inversion |
|
|
51 | (2) |
|
Small-signal transconductances |
|
|
53 | (4) |
|
|
57 | (11) |
|
|
57 | (2) |
|
|
59 | (3) |
|
Capacitances of the extrinsic transistor |
|
|
62 | (1) |
|
A non-quasi-static small-signal model |
|
|
62 | (3) |
|
A quasi-static small-signal model |
|
|
65 | (2) |
|
The intrinsic transition frequency |
|
|
67 | (1) |
|
Short-channel effects in MOSFETs |
|
|
68 | (9) |
|
|
68 | (1) |
|
|
69 | (2) |
|
Channel-length modulation |
|
|
71 | (1) |
|
Drain-induced barrier lowering |
|
|
72 | (1) |
|
Output conductance in saturation |
|
|
73 | (2) |
|
|
75 | (1) |
|
|
76 | (1) |
|
|
77 | (2) |
|
Drain-and source-associated inversion charges |
|
|
79 | (2) |
|
Summary of n-channel MOSFET equations: UCCM, current, charges, transconductances, and capacitances including short-channel effects |
|
|
81 | (1) |
|
An alternative low-frequency small-signal model of the MOSFET in saturation |
|
|
81 | (3) |
|
|
84 | (2) |
|
|
86 | (2) |
|
CMOS technology, components, and layout techniques |
|
|
88 | (46) |
|
An overview of CMOS technology |
|
|
88 | (5) |
|
Basic process steps in monolithic IC fabrication |
|
|
88 | (1) |
|
Generic deep-submicron CMOS process flow |
|
|
89 | (3) |
|
Main parameters in 350-, 180-, and 90-nm processes |
|
|
92 | (1) |
|
Devices in CMOS technology |
|
|
93 | (21) |
|
|
94 | (7) |
|
|
101 | (8) |
|
|
109 | (3) |
|
|
112 | (2) |
|
|
114 | (1) |
|
|
115 | (13) |
|
|
115 | (3) |
|
Mask layout and design rules |
|
|
118 | (3) |
|
|
121 | (7) |
|
|
128 | (2) |
|
|
130 | (4) |
|
Temporal and spatial fluctuations in MOSFETs |
|
|
134 | (43) |
|
|
134 | (3) |
|
|
134 | (2) |
|
|
136 | (1) |
|
|
136 | (1) |
|
Modeling the drain-current fluctuations in MOSFETs |
|
|
137 | (2) |
|
|
139 | (5) |
|
|
139 | (1) |
|
Short-channel effects on channel thermal noise |
|
|
140 | (1) |
|
|
141 | (3) |
|
|
144 | (3) |
|
Design-oriented noise models |
|
|
147 | (7) |
|
Consistency of noise models |
|
|
147 | (1) |
|
The thermal noise excess factor |
|
|
147 | (1) |
|
Flicker noise in terms of inversion levels |
|
|
148 | (2) |
|
|
150 | (1) |
|
|
151 | (3) |
|
Systematic and random mismatch |
|
|
154 | (16) |
|
Pelgrom's model of mismatch |
|
|
155 | (6) |
|
|
161 | (1) |
|
The number-fluctuation mismatch model |
|
|
162 | (2) |
|
The dependence of mismatch on bias, dimensions, and technology |
|
|
164 | (3) |
|
Matching analysis of analog circuits |
|
|
167 | (3) |
|
|
170 | (5) |
|
|
175 | (2) |
|
|
177 | (22) |
|
A simple MOS current mirror |
|
|
177 | (10) |
|
|
177 | (1) |
|
The two-transistor current mirror |
|
|
177 | (2) |
|
Error caused by difference between drain voltages |
|
|
179 | (1) |
|
Error caused by transistor mismatch |
|
|
180 | (4) |
|
Small-signal characterization and frequency response |
|
|
184 | (2) |
|
|
186 | (1) |
|
|
187 | (4) |
|
Self-biased cascode current mirrors |
|
|
188 | (1) |
|
High-swing cascode current mirrors |
|
|
189 | (2) |
|
|
191 | (1) |
|
|
192 | (1) |
|
|
193 | (2) |
|
|
195 | (3) |
|
|
198 | (1) |
|
Current sources and voltage references |
|
|
199 | (26) |
|
A simple MOS current source |
|
|
199 | (1) |
|
The Widlar current source |
|
|
200 | (1) |
|
Self-biased current sources (SBCSs) |
|
|
201 | (4) |
|
A MOSFET-only self-biased current source |
|
|
205 | (3) |
|
Bandgap voltage references |
|
|
208 | (9) |
|
The operating principle of the bandgap reference |
|
|
209 | (1) |
|
|
210 | (4) |
|
A CMOS bandgap reference with sub-1-V operation |
|
|
214 | (2) |
|
A resistorless CMOS bandgap reference |
|
|
216 | (1) |
|
CMOS voltage references based on weighted VGS |
|
|
217 | (1) |
|
A current-calibrated CMOS PTAT voltage reference |
|
|
218 | (1) |
|
|
219 | (3) |
|
|
222 | (3) |
|
|
225 | (67) |
|
|
225 | (14) |
|
|
225 | (1) |
|
|
226 | (2) |
|
|
228 | (3) |
|
|
231 | (5) |
|
The push-pull amplifier (static CMOS inverter) |
|
|
236 | (3) |
|
|
239 | (3) |
|
|
242 | (4) |
|
|
246 | (6) |
|
Telescopic-and folded-cascode amplifiers |
|
|
246 | (4) |
|
|
250 | (2) |
|
|
252 | (26) |
|
|
252 | (7) |
|
Resistive-load differential amplifiers |
|
|
259 | (1) |
|
Current-mirror-load differential amplifiers |
|
|
260 | (18) |
|
Sizing and biasing of MOS transistors for amplifier design |
|
|
278 | (5) |
|
Sizing and biasing of a common-source amplifier |
|
|
279 | (1) |
|
The design procedure for a common-source amplifier |
|
|
280 | (1) |
|
MOSVIEW: a graphical interface for MOS transistor design |
|
|
281 | (2) |
|
Reuse of MOS analog design |
|
|
283 | (5) |
|
Effects of scaling on analog circuits |
|
|
284 | (1) |
|
|
285 | (3) |
|
|
288 | (2) |
|
|
290 | (2) |
|
|
292 | (74) |
|
Applications and performance paramcters |
|
|
292 | (7) |
|
The ideal operational amplifier |
|
|
292 | (1) |
|
Basic applications of operational amplifiers |
|
|
293 | (4) |
|
|
297 | (2) |
|
The differential amplifier as an operational amplifier |
|
|
299 | (3) |
|
The simple-stage differential amplifier |
|
|
299 | (2) |
|
The telescopic-cascode differential amplifier |
|
|
301 | (1) |
|
The symmetric operational amplifier |
|
|
302 | (4) |
|
|
302 | (2) |
|
Small-signal characteristics and noise |
|
|
304 | (1) |
|
|
305 | (1) |
|
The folded-cascode operational amplifiers |
|
|
306 | (14) |
|
|
306 | (2) |
|
Small-signal characteristics and noise |
|
|
308 | (4) |
|
|
312 | (8) |
|
Two-stage operational amplifiers |
|
|
320 | (19) |
|
Cascade versus cascode amplifiers |
|
|
320 | (1) |
|
DC characteristics of the two-stage amplifier |
|
|
321 | (1) |
|
Small-signal characteristics of the two-stage Miller-compensated op amp |
|
|
322 | (12) |
|
|
334 | (2) |
|
Alternative forms of compensation of the two-stage op amp |
|
|
336 | (3) |
|
Three-stage operational amplifiers |
|
|
339 | (1) |
|
Rail-to-rail input stages |
|
|
340 | (2) |
|
Class-AB output stages for operational amplifiers |
|
|
342 | (8) |
|
Fully-differential operational amplifiers |
|
|
350 | (9) |
|
Systematic offset of a two-stage op amp |
|
|
359 | (1) |
|
|
360 | (3) |
|
|
363 | (3) |
|
Fundamentals of integrated continuous-time filters |
|
|
366 | (38) |
|
Basics of MOSFET-C filters |
|
|
366 | (12) |
|
The MOSFET as a tunable resistor |
|
|
367 | (1) |
|
Balanced transconductors for MOSFET-C filters |
|
|
368 | (2) |
|
|
370 | (6) |
|
|
376 | (2) |
|
|
378 | (15) |
|
|
379 | (4) |
|
|
383 | (3) |
|
Signal-to-noise ratio, dynamic range, and power |
|
|
386 | (4) |
|
|
390 | (3) |
|
Digitally-programmable continuous-time filters |
|
|
393 | (2) |
|
|
395 | (2) |
|
Distortion of the MOSFET operating as a resistor |
|
|
397 | (2) |
|
|
399 | (1) |
|
|
400 | (4) |
|
Fundamentals of sampled-data circuits |
|
|
404 | (48) |
|
MOS sample-and-hold circuits |
|
|
404 | (19) |
|
|
404 | (2) |
|
|
406 | (3) |
|
|
409 | (1) |
|
Sampling distortion due to switch on-resistance |
|
|
410 | (2) |
|
Linearization of the MOS sampling switch |
|
|
412 | (1) |
|
Charge injection by the switch |
|
|
413 | (4) |
|
Low-voltage sample-and-hold circuits |
|
|
417 | (4) |
|
|
421 | (1) |
|
Tradeoff between resolution and sampling rate in analog-to-digital converters |
|
|
422 | (1) |
|
Basics of switched-capacitor filters |
|
|
423 | (14) |
|
Basic principles of operation of switched-capacitor circuits |
|
|
423 | (3) |
|
Switched-capacitor integrators |
|
|
426 | (3) |
|
|
429 | (1) |
|
|
430 | (3) |
|
|
433 | (2) |
|
Low-distortion switched-capacitor filters |
|
|
435 | (2) |
|
Switched-capacitor circurits as charge processors |
|
|
437 | (4) |
|
Realization of linear voltage processors |
|
|
438 | (2) |
|
|
440 | (1) |
|
Alternative switched-circuit techniques |
|
|
441 | (3) |
|
Modeling the sampling distortion due to the non-linearity of the switch on-resistance |
|
|
444 | (2) |
|
|
446 | (4) |
|
|
450 | (2) |
|
Overview of MOSFET models and parameter extraction for design |
|
|
452 | (31) |
|
MOSFET models for circuit simulation |
|
|
452 | (8) |
|
Threshold-voltage-based models (BSIM3 and BSIM4) |
|
|
453 | (1) |
|
Surface-potential-based models (HiSIM, MM11, and PSP) |
|
|
454 | (4) |
|
Charge-based models (EKV, ACM, and BSIM5) |
|
|
458 | (2) |
|
Parameter extraction for first-order design |
|
|
460 | (7) |
|
Specific current and threshold voltage |
|
|
461 | (2) |
|
|
463 | (2) |
|
|
465 | (2) |
|
Comparison between experiment and the ACM model in a 0.35-μm technology |
|
|
467 | (3) |
|
Comparison between simulation and the ACM model in a 0.13-μm technology |
|
|
470 | (3) |
|
|
473 | (6) |
|
|
479 | (1) |
|
|
480 | (3) |
Index |
|
483 | |