Muutke küpsiste eelistusi

E-raamat: Computational Electrodynamics: A Gauge Approach with Applications in Microelectronics

(MAGWEL, Belgium)
  • Formaat - PDF+DRM
  • Hind: 38,47 €*
  • * hind on lõplik, st. muud allahindlused enam ei rakendu
  • Lisa ostukorvi
  • Lisa soovinimekirja
  • See e-raamat on mõeldud ainult isiklikuks kasutamiseks. E-raamatuid ei saa tagastada.

DRM piirangud

  • Kopeerimine (copy/paste):

    ei ole lubatud

  • Printimine:

    ei ole lubatud

  • Kasutamine:

    Digitaalõiguste kaitse (DRM)
    Kirjastus on väljastanud selle e-raamatu krüpteeritud kujul, mis tähendab, et selle lugemiseks peate installeerima spetsiaalse tarkvara. Samuti peate looma endale  Adobe ID Rohkem infot siin. E-raamatut saab lugeda 1 kasutaja ning alla laadida kuni 6'de seadmesse (kõik autoriseeritud sama Adobe ID-ga).

    Vajalik tarkvara
    Mobiilsetes seadmetes (telefon või tahvelarvuti) lugemiseks peate installeerima selle tasuta rakenduse: PocketBook Reader (iOS / Android)

    PC või Mac seadmes lugemiseks peate installima Adobe Digital Editionsi (Seeon tasuta rakendus spetsiaalselt e-raamatute lugemiseks. Seda ei tohi segamini ajada Adober Reader'iga, mis tõenäoliselt on juba teie arvutisse installeeritud )

    Seda e-raamatut ei saa lugeda Amazon Kindle's. 

Computational Electrodynamics is a vast research field with a wide variety of tools. In physics, the principle of gauge invariance plays a pivotal role as a guide towards a sensible formulation of the laws of nature as well as for computing the properties of elementary particles using the lattice formulation of gauge theories. However, the gauge principle has played a much less pronounced role in performing computation in classical electrodynamics.

In this work, the author demonstrates that starting from the gauge formulation of electrodynamics using the electromagnetic potentials leads to computational tools that can very well compete with the conventional electromagnetic field-based tools. Once accepting the formulation based on gauge fields, the computational code is very transparent due to the mimetic mapping of the electrodynamic variables on the computational grid. Although the illustrations and applications originate from microelectronic engineering, the method has a much larger range of applicability. Therefore this book will be useful to everyone having interest in computational electrodynamics.

The volume is organized as follows: In part 1, a detailed introduction and overview is presented of the Maxwell equations as well as the derivation of the current and charge densities in different materials. Semiconductors are responding to electromagnetic fields in a non-linear way, and the induced complications are discussed in detail. Part 2, using the gauge potentials, presents the transition of electrodynamics theory to a formulation that can serve as the gateway to computational code. In part 3, a collection of microelectronic device designs demonstrate the feasibility and success of the methods in part 2. Part 4 focuses on a set of topical themes that brings the reader to the frontier of research in building the simulation tools, using the gauge principle in computational electrodynamics.

Technical topics discussed in the book include:
- Electromagnetic Field Equations
- Constitutive Relations
- Discretization and Numerical Analysis
- Finite Element and Finite Volume Methods
- Design of Integrated Passive Components
Preface xv
Acknowledgments xix
List of Figures xxi
List of Tables xxxix
List of Symbols xli
List of Abbreviations xlv
Part I: Introduction to Electromagnetism
1 Introduction
3(4)
2 The Microscopic Maxwell Equations
7(10)
2.1 Definition of the Electric Field
7(1)
2.2 Definition of the Magnetic Field
8(1)
2.3 The Microscopic Maxwell Equations in Integral and Differential Form
9(3)
2.4 Conservation Laws
12(5)
2.4.1 Conservation of Charge - The Continuity Equation
12(1)
2.4.2 Conservation of Energy - Poynting's Theorem
13(1)
2.4.3 Conservation of Linear Momentum - The Electromagnetic Field Tensor
14(1)
2.4.4 Angular Momentum Conservation
15(2)
3 Potentials and Fields and the Lagrangian
17(6)
3.1 The Scalar and Vector Potential
17(2)
3.2 Gauge Invariance
19(1)
3.3 Lagrangian for an Electromagnetic Field Interacting with Charges and Currents
19(4)
4 The Macroscopic Maxwell Equations
23(22)
4.1 Constitutive Equations
23(1)
4.2 Boltzmann Transport Equation
24(2)
4.3 Currents in Metals
26(3)
4.4 Charges in Metals
29(1)
4.5 Semiconductors
30(1)
4.6 Currents in Semiconductors
31(5)
4.7 Insulators
36(1)
4.8 Dielectric Media
37(4)
4.9 Magnetic Media
41(4)
5 Wave Guides and Transmission Lines
45(24)
5.1 TEM Modes
47(2)
5.2 TM Modes
49(1)
5.3 TE Modes
49(1)
5.4 Transmission Line Theory - S Parameters
50(4)
5.5 Classical Ghosts Fields
54(2)
5.6 The Static Approach and Dynamic Parts
56(2)
5.7 Interface Conditions
58(1)
5.8 Boundary Conditions
59(10)
6 Energy Calculations and the Poynting Vector
69(4)
6.1 Static Case
69(1)
6.2 High-Frequency Case
70(3)
7 From Macroscopic Field Theory to Electric Circuits
73(14)
7.1 Kirchhoff's Laws
73(5)
7.2 Circuit Rules
78(2)
7.3 Inclusion of Time Dependence
80(7)
8 Gauge Conditions
87(10)
8.1 The Coulomb Gauge
89(1)
8.2 The Lorenz Gauge
90(1)
8.3 The Landau Gauge
91(3)
8.4 The Temporal Gauge
94(1)
8.5 The Axial Gauge
95(1)
8.6 The 't Hooft Gauge
95(2)
9 The Geometry of Electrodynamics
97(10)
9.1 Gravity as a Gauge Theory
98(6)
9.2 The Geometrical Interpretation of Electrodynamics
104(3)
10 Integral Theorems
107(10)
10.1 Vector Identities
113(4)
Part II: Discretization Methods for Sources and Fields
11 The Finite Difference Method
117(4)
12 The Finite Element Method
121(8)
12.1 Trial Solutions
121(1)
12.2 The Element Concept
122(7)
13 The Finite Volume Method and Finite Surface Method
129(58)
13.1 Differential Operators in Cartesian Grids
132(2)
13.2 Discretized Equations
134(1)
13.3 The No-Ghost Approach
134(5)
13.4 Current Continuity Equation
139(2)
13.5 Computational Details of the Hole Transport Equation
141(10)
13.5.1 Scaling
144(7)
13.6 Computational Details of the Electron Transport Equation
151(5)
13.6.1 Couplings
152(4)
13.7 The Poisson Equation
156(6)
13.8 Maxwell-Ampere Equation
162(2)
13.9 Using Gauge Conditions to Decrease Matrix Fill-In
164(8)
13.9.1 Poisson System
165(1)
13.9.2 Metals
166(2)
13.9.3 Dielectrics
168(2)
13.9.4 Maxwell-Ampere System
170(1)
13.9.5 "Standard" Implementation
171(1)
13.9.6 Decoupling Implementation
171(1)
13.10 The Generalized Coulomb Gauge
172(2)
13.10.1 Implementation Details of the Ampere-Maxwell System
173(1)
13.11 The EV Solver
174(5)
13.11.1 Boundary Conditions for the EV System
176(1)
13.11.2 Implementation Details of the EV System
177(2)
13.11.3 Solution Strategy of the EV System
179(1)
13.12 The Scharfetter-Gummel Discretization
179(4)
13.12.1 The Static and Dynamic Parts
181(2)
13.13 Using Unstructured Grids
183(4)
14 Finite Volume Method and the Transient Regime
187(42)
14.1 The Electromagnetic Drift-Diffusion Solver in the Time Domain
188(3)
14.2 Gauge Conditions
191(3)
14.3 Semiconductor Treatment
194(3)
14.4 Implementation of Numerical Methods for Solving the Equations
197(1)
14.5 Spatial Discretization
197(1)
14.6 Discretization of Gauss' Law
198(1)
14.7 Boundary Conditions for Gauss' Discretized Law
199(3)
14.8 Discretization of the Maxwell-Ampere System
202(5)
14.9 Boundary Conditions for the Maxwell-Ampere Equation
207(4)
14.10 Generalized Boundary Conditions for the Maxwell-Ampere Equation
211(2)
14.11 Discretization of the Gauge Condition
213(1)
14.12 Temporal Discretization
214(1)
14.13 BDF for DAEs
215(1)
14.14 State-Space Matrices and Linking Harmonic to Transient Analysis
216(5)
14.15 A Technical Detail: Link Orientations
221(1)
14.16 Scaling
222(4)
14.16.1 Scaling the Poisson Equation
222(1)
14.16.2 Scaling the Current-Continuity Equations
223(1)
14.16.3 Scaling the Maxwell-Ampere Equation
224(2)
Summary
226(3)
Part III: Applications
15 Simple Test Cases
229(52)
15.1 Examples
229(4)
15.1.1 Crossing Wires
229(1)
15.1.2 Square Coaxial Cable
229(2)
15.1.3 Spiral Inductor
231(2)
15.2 S-Parameters, Y-Parameters, Z-Parameters
233(2)
15.3 A Simple Conductive Rod
235(4)
15.4 Strip Line above a Conductive Plate
239(8)
15.4.1 Finite tM Results
246(1)
15.5 Running the Adapter
247(1)
15.6 Simulations with Opera - VectorFields
247(9)
15.7 Coax Configuration
256(2)
15.8 Inductor with Grounded Guard Ring
258(7)
15.9 Inductor with Narrow Winding above a Patterned Semiconductor Layer
265(15)
Summary
280(1)
16 Evaluation of Coupled Inductors
281(14)
16.1 Scaling Rules for the Maxwell Equations
282(1)
16.2 Discretization
283(2)
16.3 The EV Solver
285(3)
16.3.1 Boundary Conditions
287(1)
16.4 Scattering Parameters
288(2)
16.5 Application to Compute the Coupling of Inductors
290(5)
17 Coupled Electromagnetic-TCAD Simulation for High Frequencies
295(22)
17.1 Review of A-V Formulation
298(2)
17.1.1 A-V Formulation of the Coupled System
298(2)
17.2 Origin of the High-Frequency Breakdown of the A-V Solver
300(1)
17.3 E-V Formulation
301(7)
17.3.1 Redundancy in Coupled System
303(1)
17.3.2 Issues of Material Properties
304(1)
17.3.3 Boundary Conditions
305(1)
17.3.4 Implementation Details
306(1)
17.3.5 Matrix Permutation
307(1)
17.4 Numerical Results
308(8)
17.4.1 Accuracy of E-V Solver
308(3)
17.4.2 Spectral Analyses
311(3)
17.4.3 Performance Comparisons
314(2)
Summary
316(1)
18 EM-TCAD Solving from 0-100 THz
317(10)
18.1 From AV to EV
317(2)
18.2 Discretization
319(1)
18.3 Simplified EV Schemes
320(1)
18.4 Combination of AV and EV Solvers
321(1)
18.5 Numerical Experiments
321(4)
18.6 Best Practices for Iterative Solving
325(2)
19 Large Signal Simulation of Integrated Inductors on Semi-Conducting Substrates
327(14)
19.1 Need for Mimetic Formulation
328(1)
19.2 Field Equations
329(3)
19.3 Application to An Octa-Shaped Inductor
332(7)
Summary
339(2)
20 Inclusion of Lorentz Force Effects in TCAD Simulations
341(12)
20.1 Steady-State Equations
342(2)
20.2 Discretization of the Lorentz Current Densities
344(3)
20.3 Static Skin Effects in Conducting Wires
347(1)
20.4 Self-Induced Lorentz Force Effects in Metallic Wires
348(1)
20.5 Self-Induced Lorentz Force Effects in Silicon Wires
349(1)
20.6 External Fields
349(2)
Summary
351(2)
21 Self-Induced Magnetic Field Effects, the Lorentz Force and Fast-Transient Phenomena
353(26)
21.1 Time-Domain Formulation of EM-TCAD Problem
356(2)
21.2 Inclusion of the Lorentz Force
358(2)
21.3 Discretization of the Lorentz Current Densities
360(6)
21.4 Applications
366(11)
Summary
377(2)
22 EM Analysis of ESD Protection for Advanced CMOS Technology
379(16)
22.1 Simulation of a Metallic Wire
380(3)
22.2 In-depth Simulation of the Full ESD Structure
383(4)
22.3 Negative Stress with Active Diode
387(2)
22.4 Diode SCR
389(2)
22.5 Comparison with TLP Measurements
391(1)
Summary
392(3)
23 Coupled Electromagnetic-TCAD Simulation for Fast-Transient Systems
395(14)
23.1 Time-Domain A-V formulation
397(3)
23.2 Analysis of Fast-Transient Breakdown
400(2)
23.3 Time-Domain E-V Formulation
402(2)
23.4 Numerical Results
404(3)
Summary
407(2)
24 A Fast Time-Domain EM-TCAD Coupled Simulation Framework via Matrix Exponential with Stiffness Reduction
409(28)
24.1 Time-Domain Formulation of EM-TCAD Problem
411(4)
24.2 Time-Domain Simulation with Matrix Exponential Method
415(5)
24.3 Error Control and Adaptivity
420(1)
24.4 E-V Formulation of EM-TCAD for MEXP Method
421(3)
24.5 Numerical Results
424(7)
24.6 Validity Proof of Regularization with Differentiated Gauss' Law
431(1)
24.7 Fast Computation of Mx in E-V Formulation
432(1)
Summary
433(4)
Part IV: Advanced Topics
25 Surface-Impedance Approximation to Solve RF Design Problems
437(18)
25.1 Surface Impedance Approximation
437(3)
25.2 Formulation of the BISC in Potentials
440(2)
25.3 Scaling Considerations
442(2)
25.4 One-Dimensional Test Example
444(11)
26 Using the Ghost Method for Floating Domains in Electromagnetic Field Solvers
455(22)
26.1 Problem Description
456(2)
26.2 Proposed Solution
458(1)
26.3 Example 1: Metal Blocks Embedded in Insulator
459(1)
26.4 Example 2: A Transformer System
460(2)
26.5 Initial Guess
462(1)
26.6 High-Frequency Problems
462(6)
26.7 Floating Semiconductor Regions
468(9)
27 Integrating Factors for Discretizing the Maxwell-Ampere Equation
477(26)
27.1 Review of the Scharfetter-Gummel Discretization
478(1)
27.2 Observations
479(2)
27.3 Maxwell Equations
481(1)
27.4 Discretization of the Curl-Curl Operator
482(2)
27.5 Discretization of the Divergence Operator
484(5)
27.6 Discretization of Poisson-Type Operators
489(1)
27.7 Equivalence
490(1)
27.8 High-Frequency Maxwell Equations
491(2)
27.9 Integrating Factors for Unstructured Grids
493(1)
27.10 Implementation Details
494(1)
27.11 Effect of the Inclusion of the Integrating Factor
495(1)
27.12 Simulation Set Up and Results
495(6)
Summary
501(2)
28 Stability Analysis of the Transient Field Solver
503(60)
28.1 Impact of the Gauge Condition
509(4)
28.2 Magnetic Neumann Boundary Conditions
513(1)
28.3 Results for Larger Values of the Conductance
513(5)
28.4 Yet Another Experiment
518(1)
28.5 Inductor Experiments
518(6)
28.6 Results for a Metal Loop
524(2)
28.7 Results for a Twisted Bar
526(4)
28.8 Corner Example
530(4)
28.9 Returning to the Original Problem
534(4)
28.10 Revisiting the Equations
538(5)
28.11 Redoing the Corner Structure
543(6)
28.12 Simple Test Structure for the Stability Problem
549(6)
28.13 Results for a Single Line
555(3)
28.14 Some Theoretical Considerations
558(1)
28.15 The Impact of the Meshing
559(2)
28.16 Final
Summary of Stability Study
561(2)
29 Summary of the Numerical Techniques
563(12)
29.1 Equations
563(3)
29.2 Boundary conditions
566(1)
29.3 Spatial Discretization
567(8)
References 575(10)
Index 585(10)
About the Author 595
Wim Schoenmaker