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E-raamat: Design, Simulation and Applications of Inductors and Transformers for Si RF ICs

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The modern wireless communication industry has put great demands on circuit designers for smaller, cheaper transceivers in the gigahertz frequency range. One tool which has assisted designers in satisfying these requirements is the use of on-chip inductiveelements (inductors and transformers) in silicon (Si) radio-frequency (RF) integrated circuits (ICs). These elements allow greatly improved levels of performance in Si monolithic low-noise amplifiers, power amplifiers, up-conversion and down-conversion mixers and local oscillators. Inductors can be used to improve the intermodulation distortion performance and noise figure of small-signal amplifiers and mixers. In addition, the gain of amplifier stages can be enhanced and the realization of low-cost on-chip local oscillators with good phase noise characteristics is made feasible. In order to reap these benefits, it is essential that the IC designer be able to predict and optimize the characteristics of on-chip inductiveelements. Accurate knowledge of inductance values, quality factor (Q) and the influence of ad- cent elements (on-chip proximity effects) and substrate losses is essential. In this book the analysis, modeling and application of on-chip inductive elements is considered. Using analyses based on Maxwells equations, an accurate and efficient technique is developed to model these elements over a wide frequency range. Energy loss to the conductive substrate is modeled through several mechanisms, including electrically induced displacement and conductive c- rents and by magnetically induced eddy currents. These techniques have been compiled in a user-friendly software tool ASITIC (Analysis and Simulation of Inductors and Transformers for Integrated Circuits).
List of Figures
ix
List of Tables
xv
Preface xvii
Acknowledgments xix
Part I Analysis and Simulation of Passive Devices
Introduction
3(8)
Introduction
3(1)
Passive Devices in Early Integrated Circuits
3(1)
Applications of Passive Devices
4(2)
Wireless Communication
6(2)
Si Integrated Circuit Technology
8(1)
Contributions of this Research
9(2)
Problem Description
11(28)
Definition of Passive Devices
11(4)
Loss Mechanisms
15(6)
Device Layout
21(14)
Substrate Coupling
35(4)
Previous Work
39(6)
Early Work
39(1)
Passive-Devices on the GaAs substrate
40(1)
Passive Devices on the Si Substrate
40(3)
Passive Devices on Highly Conductive Si Substrate
43(2)
Electromagnetic Formulation
45(14)
Introduction
45(1)
Maxwell's Equations
45(3)
Calculating Substrate Induced Losses
48(2)
Inversion of Maxwell's Differential Equations
50(2)
Numerical Solutions of Electromagnetic Fields
52(1)
Discretization of Maxwell's Equations
53(6)
Inductance Calculations
59(16)
Introduction
59(1)
Definition of Inductance
60(5)
Parallel and Series Inductors
65(1)
Filamental Inductance Formulae for Common Configurations
66(1)
Calculation of Self and Mutual Inductance for Conductors
67(1)
High Frequency Inductance Calculation
68(7)
Calculation of Eddy Current Losses
75(22)
Introduction
75(1)
Electromagnetic Formulation
76(8)
Eddy Current Losses at Low Frequency
84(4)
Eddy Currents at High Frequency
88(5)
Examples
93(4)
Asitic
97(12)
Introduction
97(2)
ASITIC Organization
99(1)
Numerical Calculations
100(1)
Circuit Analysis
101(8)
Experimental Study
109(16)
Measurement Results
109(1)
Device Calibration
110(3)
Single Layer Inductor
113(6)
Multi-Layer Inductor
119(6)
Part II Applications of Passive Devices
Voltage Controlled Oscillators
125(24)
Introduction
125(2)
Motivation
127(1)
Passive Device Design and Optimization
128(6)
VCO Circuit Design
134(7)
VCO Implementation
141(3)
Measurements
144(2)
Conclusion
146(3)
Distributed Amplifiers
149(14)
Introduction
149(1)
Image Parameter Method
150(6)
Distributed Amplifier Gain
156(7)
Conclusion
163(4)
Future Research
164(3)
Appendix A-- Distributed Capacitance 167