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E-raamat: Dopants and Defects in Semiconductors

(University of California, Berkeley, USA), (Washington State University, Pullman, USA)
  • Formaat: EPUB+DRM
  • Ilmumisaeg: 19-Feb-2018
  • Kirjastus: CRC Press
  • Keel: eng
  • ISBN-13: 9781351977975
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  • Formaat: EPUB+DRM
  • Ilmumisaeg: 19-Feb-2018
  • Kirjastus: CRC Press
  • Keel: eng
  • ISBN-13: 9781351977975

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Praise for the First EditionThe book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics … an easy reading, broad introductory overview of the field ?Materials Today… well written, with clear, lucid explanations …?Chemistry WorldThis revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors.Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley.Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

Arvustused

"The second edition of this textbook lays the groundwork for both the classical and modern developments in the theory of semiconductors. This book is significant both for its presentation of the basic principles of the theory of defects in semiconductors and for its exposition of recent developments in the field, such as LEDs and laser diodes."

--Christian Brosseau, OSA Fellow and professor of physics, Université de Bretagne Occidentale, Brest, France

Preface to the Second Edition xi
Preface to the First Edition xiii
Authors xv
Abbreviations xvii
List of Elements by Symbol
xxi
Chapter 1 Semiconductor Basics
1(28)
1.1 Historical Overview
1(2)
1.2 Cubic Crystals
3(3)
1.3 Other Crystals
6(2)
1.4 Phonons and the Brillouin Zone
8(2)
1.5 The Band Gap
10(1)
1.6 Band Theory
11(5)
1.7 Electrons and Holes
16(3)
1.8 Doping
19(2)
1.9 Optical Properties
21(2)
1.10 Electronic Transport
23(1)
1.11 Examples of Semiconductors
24(5)
Problems
25(1)
References
26(3)
Chapter 2 Defect Classifications
29(20)
2.1 Basic Definitions
29(1)
2.2 Energy Levels
30(3)
2.3 Examples of Native Defects
33(2)
2.4 Examples of Nonhydrogenic Impurities
35(3)
2.5 Hydrogen
38(1)
2.6 Defect Symmetry
39(3)
2.7 Dislocations
42(7)
Problems
46(1)
References
47(2)
Chapter 3 Interfaces and Devices
49(18)
3.1 Ideal Metal-Semiconductor Junctions
49(2)
3.2 Real Metal-Semiconductor Junctions
51(4)
3.3 Depletion Width
55(1)
3.4 The p-n Junction
56(2)
3.5 Applications of p-n Junctions
58(1)
3.6 The Metal-Oxide-Semiconductor Junction
59(2)
3.7 The Charge-Coupled Device
61(1)
3.8 Light-Emitting Devices
62(1)
3.9 The 2D Electron Gas
63(4)
Problems
64(1)
References
65(2)
Chapter 4 Crystal Growth and Doping
67(30)
4.1 Bulk Crystal Growth
67(3)
4.2 Dopant Incorporation During Bulk Crystal Growth
70(4)
4.3 Thin Film Growth
74(1)
4.4 Liquid Phase Epitaxy
75(2)
4.5 Chemical Vapor Deposition
77(2)
4.6 Molecular Beam Epitaxy
79(2)
4.7 Alloying
81(2)
4.8 Doping by Diffusion
83(2)
4.9 Ion Implantation
85(4)
4.10 Annealing and Dopant Activation
89(3)
4.11 Neutron Transmutation
92(5)
Problems
94(1)
References
94(3)
Chapter 5 Electronic Properties
97(32)
5.1 Hydrogenic Model
97(5)
5.2 Wave Function Symmetry
102(4)
5.3 Donor and Acceptor Wave Functions
106(2)
5.4 Deep Levels
108(5)
5.5 Carrier Concentrations as a Function of Temperature
113(3)
5.6 Freeze-Out Curves
116(3)
5.7 Scattering Processes
119(3)
5.8 Hopping and Impurity Band Conduction
122(3)
5.9 Spintronics
125(4)
Problems
126(1)
References
127(2)
Chapter 6 Vibrational Properties
129(32)
6.1 Phonons
129(4)
6.2 Defect Vibrational Modes
133(5)
6.3 Infrared Absorption
138(2)
6.4 Interactions and Lifetimes
140(2)
6.5 Raman Scattering
142(2)
6.6 Wave Functions and Symmetry
144(3)
6.7 Oxygen in Silicon and Germanium
147(4)
6.8 Impurity Vibrational Modes in GaAs
151(4)
6.9 Hydrogen Vibrational Modes
155(6)
Problems
157(1)
References
158(3)
Chapter 7 Optical Properties
161(32)
7.1 Free-Carrier Absorption and Reflection
161(3)
7.2 Lattice Vibrations
164(4)
7.3 Dipole Transitions
168(1)
7.4 Band-Gap Absorption
169(4)
7.5 Carrier Dynamics
173(5)
7.6 Exciton and Donor-Acceptor Emission
178(4)
7.7 Isoelectronic Impurities
182(2)
7.8 Lattice Relaxation
184(3)
7.9 Transition Metals
187(6)
Problems
189(1)
References
190(3)
Chapter 8 Thermal Properties
193(28)
8.1 Defect Formation
193(2)
8.2 Charge State
195(2)
8.3 Chemical Potential
197(2)
8.4 Diffusion
199(5)
8.5 Microscopic Mechanisms of Diffusion
204(3)
8.6 Self-Diffusion
207(3)
8.7 Dopant Diffusion
210(4)
8.8 Quantum-Well Intermixing
214(7)
Problems
218(1)
References
219(2)
Chapter 9 Electrical Measurements
221(26)
9.1 Resistivity and Conductivity
222(1)
9.2 Methods of Measuring Resistivity
223(5)
9.3 Hall Effect
228(3)
9.4 Capacitance-Voltage Profiling
231(3)
9.5 Carrier Emission and Capture
234(1)
9.6 Deep-Level Transient Spectroscopy
235(3)
9.7 Minority Carriers and Deep-Level Transient Spectroscopy
238(2)
9.8 Minority Carrier Lifetime
240(1)
9.9 Thermoelectric Effect
241(6)
Problems
242(1)
References
243(4)
Chapter 10 Optical Spectroscopy
247(30)
10.1 Absorption
248(2)
10.2 Emission
250(2)
10.3 Raman Spectroscopy
252(3)
10.4 Fourier Transform Infrared Spectroscopy
255(3)
10.5 Photoconductivity
258(2)
10.6 Time-Resolved Techniques
260(2)
10.7 Applied Stress
262(3)
10.8 Electron Paramagnetic Resonance
265(4)
10.9 Optically Detected Magnetic Resonance
269(1)
10.10 Electron Nuclear Double Resonance
270(7)
Problems
273(1)
References
274(3)
Chapter 11 Particle-Beam Methods
277(28)
11.1 Rutherford Backscattering Spectrometry
277(4)
11.2 Ion Range
281(4)
11.3 Secondary Ion Mass Spectrometry
285(2)
11.4 X-Ray Emission
287(1)
11.5 X-Ray Absorption
288(2)
11.6 Photoelectric Effect
290(2)
11.7 Electron Beams
292(2)
11.8 Positron Annihilation
294(2)
11.9 Muons
296(2)
11.10 Perturbed Angular Correlation Spectroscopy
298(3)
11.11 Nuclear Reactions
301(4)
Problems
301(1)
References
302(3)
Chapter 12 Microscopy and Structural Characterization
305(24)
12.1 Optical Microscopy
305(5)
12.2 Scanning Electron Microscopy
310(4)
12.3 Cathodoluminescence
314(2)
12.4 Electron Beam Induced Current Microscopy
316(2)
12.5 Diffraction
318(1)
12.6 Transmission Electron Microscopy
319(3)
12.7 Scanning Probe Microscopy
322(7)
Problems
326(1)
References
327(2)
Appendices 329(8)
Physical Constants 337(2)
Index 339
Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley, in 1997, and was a postdoctoral researcher at the Xerox Palo Alto Research Center (PARC) (California) from 1997 to 1998. Dr. McCluskey joined WSU as an assistant professor in 1998. His research interests include defects in semiconductors, materials under high pressure, shock compression of semiconductors, and vibrational spectroscopy.

Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland, in 1967. Dr. Haller joined the Lawrence Berkeley National Laboratory (California) as a staff scientist in 1973. In 1980, he was appointed associate professor in the Department of Materials Science Engineering, UC, Berkeley. His major research areas include semiconductor growth, characterization, and processing; far-infrared detectors, isotopically controlled semiconductors, and semiconductor nanocrystals.