The rationale for the volume is that accurate modeling of nanoscale electron devices is essential both for their technological and optimization and for their use in circuit design and, depending on the applications, different levels of modeling have to be used. Electronic engineers describe different modeling levels for different nanoscale metal-oxide semiconductor structures, looking at different levels of electrostatics and transport modeling and the relationships between them. They cover the Monte-Carlo simulation of ultra-thin film silicon-on-insulator metal-oxide-semiconductor field-effect-transistor (MOSFETs), analytical models and the electrical characterization of advanced MOSFETs, the physics-based analytical modeling of nanoscale multigate MOSFETs, and the compact modeling of double and tri-gate MOSFETs. Annotation ©2016 Ringgold, Inc., Portland, OR (protoview.com)
This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.
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