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E-raamat: Frontiers In Electronics - Proceedings Of The Workshop On Frontiers In Electronics 2009

Edited by (Grenoble Inp - Minatec, France), Edited by (Rensselaer Polytechnic Inst, Usa)
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Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.
Preface v
Advanced Terahertz and Photonics Devices
1(62)
Broadband Terahertz Wave Generation, Detection and Coherent Control Using Terahertz Gas Photonics
3(10)
J. Liu
J. Dai
X. Lu
I. C. Ho
X. C. Zhang
How do We Lose Excitation in the Green?
13(14)
C. Wetzel
Y. Xia
W. Zhao
Y. Li
M. Zhu
S. You
L. Zhao
W. Hou
C. Stark
M. Dibiccari
Silicon Finfets as Detectors of Terahertz and Sub-Terahertz Radiation
27(16)
W. Stillman
C. Donais
S. Rumyantsev
M. Shur
D. Veksler
C. Hobbs
C. Smith
G. Bersuker
W. Taylor
R. Jammy
Progress in Development of Room Temperature CW GaSb based Diode Lasers for 2-3.5 μm Spectral Region
43(8)
T. Hosoda
J. Chen
G. Tsvid
D. Westerfeld
R. Liang
G. Kipshidze
L. Shterengas
G. Belenky
WDM Demultiplexing by Using Surface Plasmon Polaritons
51(12)
D. K. Mynbaev
V. Sukharenko
Silicon and Germanium on Insulator and Advanced CMOS and MOSHFETs
63(66)
Connecting Electrical and Structural Dielectric Characteristics
65(16)
G. Bersuker
D. Veksler
C. D. Young
H. Park
W. Taylor
P. Kirsch
R. Jammy
L. Morassi
A. Padovani
L. Larcher
Advanced Solutions for Mobility Enhancement in SOI MOSFETs
81(14)
L. Pham-Nguyen
C. Fenouillet-Beranger
P. Perreau
S: Denorme
G. Ghibaudo
O. Faynot
T. Skotnicki
A. Ohata
M. Casse
I. Ionica
W. van den Daele
K-H. Park
S-J. Chang
Y-H. Bae
M. Bawedin
S. Cristoloveanu
Electron Scattering in Buried InGaAs/High-K MOS Channels
95(10)
S. Oktyabrsky
P. Nagaiah
V. Tokranov
M. Yakimov
R. Kambhampati
S. Koveshnikov
D. Veksler
N. Goel
G. Bersuker
Low Frequency Noise and Interface Density of Traps in InGaAs MOSFETs with GdScO3 High-K Dielectric
105(10)
S. Rumyantsev
W. Stillman
M. Shur
T. Heeg
D. G. Schlom
S. Koveshnikov
R. Kambhampati
V. Tokranov
S. Oktyabrsky
Low-Power Biomedical Signal Monitoring System for Implantable Sensor Applications
115(14)
M. R. Haider
J. Holleman
S. Mostafa
S. K. Islam
Nanomaterials and Nanodevices
129(88)
III-V Compound Semiconductor Nanowires for Optoelectronic Device Applications
131(12)
Q. Gao
H. J. Joyce
S. Paiman
J. H. Kang
H. H. Tan
Y. Kim
L. M. Smith
H. E. Jackson
J. M. Yarrison-Rice
J. Zou
C. Jagadish
Electron Heating in Quantum-Dot Structures with Collective Potential Barriers
143(10)
L. H. Chien
A. Sergeev
N. Vagidov
V. Mitin
S. Birner
Electronic Structure of Graphene Nanoribbons Subjected to Twist and Nonuniform Strain
153(8)
A. Dobrinsky
A. Sadrzadeh
B. I. Yakobson
J. Xu
Low-Frequency Electronic Noise in Graphene Transistors: Comparison with Carbon Nanotubes
161(10)
G. Liu
W. Stillman
S. Rumyantsev
M. Shur
A. A. Balandin
ZnO Nanocrystalline High Performance Thin Film Transistors
171(12)
B. Bayraktaroglu
K. Leedy
R. Neidhard
Zinc Oxide Nanoparticles for Ultraviolet Photodetection
183(12)
S. Sawyer
L. Qin
C. Shing
Carbon-Based Nanoelectromechanical Devices
195(10)
S. Bengtsson
P. Enoksson
F. A. Ghavanini
K. Engstrom
P. Lundgren
E. E. B. Campbell
J. Ek Weis
N. Olofsson
A. Eriksson
Charge Puddles and Edge Effect in a Graphene Device as Studied by a Scanning Gate Microscope
205(12)
J. Chae
H. J. Yang
H. Baek
J. Ha
Y. Kuk
S. Y. Jung
Y. J. Song
N. B. Zhitenev
J. A. Stroscio
S. J. Woo
Y.-W. Son
Wide Band Gap Technology for High Power and UV Photonics
217(12)
Novel Approaches to Microwave Switching Devices using Nitride Technology
219(10)
G. Simin
J. Wang
B. Khan
J. Yang
A. Sattu
R. Gaska
M. Shur
Author Index 229
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