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E-raamat: Fundamental And Applied Problems Of Terahertz Devices And Technologies: Selected Papers From The Russia-japan-usa-europe Symposium (Rjuse Teratech-2016)

Edited by (Univ Of Aizu, Japan), Edited by (Univ Of Aizu, Japan), Edited by (Tohoku University, Japan)
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Terahertz (THz) electromagnetic waves, phenomena in the THz range and related technological issues have been explosively investigated during the recent two decades. However, its potential as a disruptive technology to commercial applications has yet to make any impression.The Russia-Japan-USA-Europe Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUSE-TeraTech 2016), held at Katahira Campus of Tohoku University, Sendai, Japan on October 31 - November 4, 2016, aims to bring together researchers from Russia, Japan, USA and Europe, who are working on the broad range of related problems in the terahertz devices, technologies and applications, to discuss on state-of-the-art results and future directions and collaborations in the development of THz.This is the fifth in the series of preceding successful symposiums in Terahertz Devices and Technologies. It contains 14 selected extended papers presented at the RJUSE-TeraTech 2016 symposium, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors (FET) utilizing resonant plasma effects, quantum cascade (QCL) and HgCdTe quantum-well heterostructures, and graphene-based THz devices.
Preface v
High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors
1(126)
D. Coquillat
V. Nodjiadjim
S. Blin
A. Konczykowska
N. Dyakonova
C. Consejo
P. Nouvel
A. Penarier
J. Torres
D. But
S. Ruffenach
F. Teppe
M. Riet
A. Muraviev
A. Gutin
M. Shur
W. Knap
Terahertz Response of Tightly Concatenated Two Dimensional InGaAs Field-Effect Transistors Integrated on a Single Chip
11(12)
D. M. Yermolayev
E. A. Polushkin
A. V. Koval'chuk
S. Yu. Shapoval
K. V. Marem'yanin
V. I. Gavrilenko
N. A. Maleev
V. M. Ustinov
V. E. Zemlyakov
V. I. Yegorkin
V. A. Bespalov
V. V. Popov
I. Khmyrova
Optimization of the Design of Terahertz Detectors Based on Si CMOS and A IGaN/GaN Field-Effect Transistors
23(10)
Maris Bauer
Sebastian Boppel
Jingshui Zhang
Adam Ramer
Serguei Chevtchenko
Alvydas Lisauskas
Wolfgang Heinrich
Viktor Krozer
Hartmut G. Roskos
Design and Fabrication of Terahertz Detectors Based on 180-nm CMOS Process Technology
33(10)
Kosuke Wakita
Eiichi Sano
Masayuki Ikebe
Stevanus Arnold
Taiichi Otsuji
Yuma Takida
Hiroaki Minamide
Plasma Instability of 2D Electrons in a Field Effect Transistor with a Partly Gated Channel
43(8)
Aleksandr S. Petrov
D. Svintsov
M. Rudenko
V. Ryzhii
M. S. Shur
THz Spectroscopic Imaging of Chemicals Using IS-TPG
51(8)
Kosuke Murate
Mikiya Kato
Kodo Kawase
Imaging and Gas Spectroscopy for Health Protection in Sub-THz Frequency Range
59(10)
W. Knap
D. B. But
D. Couquillat
N. Dyakonova
M. Sypek
J. Suszek
E. Domracheva
M. Chernyaeva
V. Vaks
K. Maremyanin
V. Gavrilenko
C. Archier
B. Moulin
G. Cywinski
I. Yahniuk
K. Szkudlarek
Calculation of Modal Gain for Terahertz Lasers Based on HgCdTe Heterostructures with Quantum Wells
69(10)
Alexander A. Dubinov
Vladimir Ya. Aleshkin
Plasmonic Enhancement of Terahertz Devices Efficiency
79(8)
Vladimir Mitin
Victor Ryzhii
Maxim Ryzhii
Akira Satou
Taiichi Otsuji
Michael S. Shur
Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation
87(10)
J. A. Delgado Notario
E. Javadi
J. Calvo-Gallego
E. Diez
J. E. Velazquez
Y. M. Meziani
K. Fobelets
Improved Performance of Ultrahigh-Sensitive Charge-Sensitive Infrared Phototransistors (CSIP)
97(6)
Sunmi Kim
Susumu Komiyama
Shinpei Matsuda
Mikhail Patrashin
Yusuke Kajihara
Terahertz Quantum-Cascade Laser Based on the Resonant-Phonon Depopulation Scheme
103(6)
Rustam A. Khabibullin
Nikolay V. Shchavruk
Aleksandr Yu. Pavlov
Alexey N. Klochkov
Dmitry S. Ponomarev
Igor A. Glinskiy
Petr P. Maltsev
Alexey E. Zhukov
George E. Cirlin
Zhores I. Alferov
Intensive Terahertz Radiation from InxGal-xAs due to Photo-Dember Effect
109(8)
Dmitry S. Ponomarev
Rustam A. Khabibullin
Aleksandr E. Yachmenev
Petr P. Maltsev
Igor E. Ilyakov
Boris V. Shiskin
Rinat A. Akhmedzhanov
Numerical Characterization of Dyakonov-Shur Instability in Gated Two-Dimensional Electron Systems
117(10)
Akira Satou
Koichi Narahara
Author Index 127