Seven papers document the third in the series of annual symposia. They cover terahertz sensing technology, detecting terahertz radiation by dense arrays of InGaAs transistors, investigating and fabricating semiconductor devices based on the metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures for terahertz applications, the peculiarity of terahertz wave scattering, the Rashba effect and beating patterns in the terahertz magneto-photoresponse of a HgTe-based two-dimensional electron gas, characterizing high mobility InAs/InGaAs/InAlAs composite channels by terahertz magneto-photoresponse spectroscopy, and quantum dot solar cells with nanoscale barriers around dots: experiment and two-diode model analysis. Annotation ©2016 Ringgold, Inc., Portland, OR (protoview.com)
This book brings together seven selected best papers presented at the 2014 Russia–Japan–USA Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUS TeraTech-2014), which was held at the University of Buffalo, New York, USA on 17–21 June 2014.As the third in the series of annual meetings, RJUS TeraTech-2014 continues to be an excellent platform for researchers to exchange their recent original results, and to deal with the technical challenges and barriers of transitioning the research results into the THz system-level applications. The symposium focuses on 2 main areas, namely, interaction of THz radiation with micro- and nano-structures, and advanced solid-state THz emitters and sensors. Leading experts from academia, industry, and government agencies from three countries, including USA, Japan, and Russia, contributed to the collection of research results and developments.This book, covering issues ranging from basic Thz-related phenomena to applications in sensing, imaging, and communications, contains some ground-breaking works in the industry, and will be a useful reference for device and electronics engineers and scientists.
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