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xv | |
Preface |
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xix | |
Where is silicon based MEMS heading to? |
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xxi | |
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Part I Silicon as MEMS Material |
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3 | (16) |
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1.1 Properties of silicon |
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3 | (13) |
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16 | (3) |
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2 Czochralski growth of silicon crystals |
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19 | (42) |
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2.1 The Czochralski crystal-growing furnace |
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19 | (4) |
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2.2 Stages of growth process |
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23 | (5) |
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2.3 Selected issues of crystal growth |
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28 | (3) |
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2.4 Improved thermal and gas-flow designs |
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31 | (1) |
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32 | (1) |
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33 | (5) |
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38 | (3) |
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2.8 Hot recharging and continuous feed |
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41 | (2) |
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2.9 Heavily n-type doped silicon and constitutional supercooling |
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43 | (5) |
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2.10 Growth of large diameter crystals |
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48 | (13) |
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58 | (2) |
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60 | (1) |
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3 Properties of silicon crystals |
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61 | (32) |
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3.1 Dopants and impurities |
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61 | (2) |
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3.2 Typical impurity concentrations |
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63 | (2) |
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3.3 Concentration of dopants and impurities in axial direction |
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65 | (2) |
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67 | (3) |
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3.5 Radial variation of impurities and resistivity |
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70 | (2) |
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72 | (3) |
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3.7 Defects in silicon crystals |
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75 | (4) |
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3.8 Control of vacancies, interstitials, and the oxidation-induced stacking fault ring |
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79 | (3) |
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82 | (6) |
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88 | (5) |
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89 | (1) |
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89 | (4) |
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4 Silicon wafers preparation and properties |
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93 | (18) |
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4.1 Silicon wafer manufacturing process |
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93 | (10) |
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4.2 Standard measurements of polished wafers |
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103 | (2) |
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4.3 Sample specifications of microelectromechanical systems wafers |
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105 | (1) |
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4.4 Standards of silicon wafers |
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105 | (6) |
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109 | (2) |
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5 Epi wafers: preparation and properties |
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111 | (22) |
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5.1 Silicon epitaxy for MEMS |
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111 | (1) |
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5.2 Silicon epitaxy---the basics |
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111 | (6) |
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5.3 The epi---poly process |
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117 | (1) |
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118 | (2) |
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5.5 Epi on silicon on insulator substrates |
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120 | (1) |
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5.6 Selective epitaxy and epitaxial layer overgrowth |
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121 | (1) |
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5.7 Considerations for chemical mechanical polishing |
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122 | (1) |
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122 | (5) |
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5.9 Commercially available epitaxy systems |
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127 | (2) |
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129 | (4) |
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130 | (3) |
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133 | (82) |
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6.1 Thin films on silicon: silicon dioxide |
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133 | (11) |
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133 | (1) |
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6.1.2 Growth methods of silicon dioxide |
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133 | (8) |
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6.1.3 Structure and properties of silicon dioxides |
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141 | (1) |
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6.1.4 Processing of silicon dioxides |
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142 | (1) |
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143 | (1) |
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6.2 Thin films on silicon: silicon nitride |
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144 | (6) |
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144 | (1) |
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6.2.2 Growth of silicon nitride |
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144 | (3) |
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6.2.3 Structure and properties of silicon nitride |
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147 | (1) |
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6.2.4 Processing of silicon nitride |
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147 | (3) |
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150 | (1) |
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6.3 Thin films on silicon: poly-SiGe for MEMS-above-CMOS applications |
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150 | (13) |
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150 | (1) |
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6.3.2 Material properties of poly-SiGe |
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151 | (2) |
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6.3.3 Poly-SiGe microelectromechanical systems manufacturing |
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153 | (5) |
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6.3.4 SiGe microelectromechanical systems demonstrators |
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158 | (2) |
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6.3.5 Conclusion and future poly-SiGe research |
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160 | (1) |
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161 | (2) |
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6.4 Atomic layer deposition of thin films |
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163 | (11) |
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163 | (1) |
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6.4.2 Operation principles of atomic layer deposition |
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164 | (1) |
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6.4.3 Atomic layer deposition processes and materials |
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165 | (2) |
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6.4.4 Molecular layer deposition |
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167 | (1) |
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6.4.5 Characteristics of atomic layer deposition processes and films |
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167 | (4) |
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6.4.6 Atomic layer deposition reactors |
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171 | (1) |
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172 | (1) |
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173 | (1) |
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174 | (1) |
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6.5 Piezoelectric thin film materials for microelectromechanical systems |
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174 | (12) |
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174 | (1) |
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6.5.2 Short introduction to piezoelectric theory and important thin-film constants |
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175 | (1) |
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176 | (2) |
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178 | (5) |
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6.5.5 Other (future?) piezoelectric materials for microelectromechanical systems |
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183 | (1) |
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183 | (3) |
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186 | (10) |
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186 | (1) |
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6.6.2 Fabrication methods |
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186 | (2) |
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6.6.3 Characteristic properties |
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188 | (3) |
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191 | (3) |
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194 | (2) |
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6.7 Thin films for antistiction |
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196 | (19) |
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196 | (2) |
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6.7.2 Typical characterization techniques |
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198 | (1) |
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6.7.3 Self-assembled monolayers |
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199 | (6) |
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205 | (1) |
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6.7.5 Fluoropolymer coatings |
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206 | (2) |
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208 | (1) |
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209 | (6) |
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7 Thick-film silicon-on-insulator wafers preparation and properties |
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215 | (34) |
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215 | (1) |
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7.2 Overview of silicon-on-insulator |
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215 | (5) |
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7.3 Silicon wafer parameters for direct bonding |
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220 | (3) |
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7.4 Fabrication of thick-film BSOI by mechanical grinding and polishing |
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223 | (13) |
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7.5 Bonding and etch-back silicon-on-insulator process |
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236 | (2) |
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7.6 Techniques based on thin-film silicon-on-insulator and silicon epitaxy |
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238 | (4) |
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7.7 Silicon-on-insulator wafers with buried cavities |
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242 | (2) |
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7.8 Silicon-on-insulator wafers with buried atomic layer deposition thin film |
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244 | (1) |
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244 | (5) |
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245 | (4) |
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8 Multiscale modeling methods |
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249 | (14) |
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8.1 Macroscopic and microscopic equations |
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249 | (1) |
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8.2 Computational methods and practical examples |
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250 | (4) |
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8.3 First-principles calculation method |
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254 | (6) |
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260 | (3) |
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260 | (3) |
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9 Mechanical properties of silicon microstructures |
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263 | (42) |
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9.1 Basic structural properties of crystalline silicon |
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263 | (8) |
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9.2 Dislocations in silicon |
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271 | (14) |
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9.3 Physical mechanisms of fracture in silicon |
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285 | (9) |
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9.4 Physical mechanisms of fatigue of silicon |
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294 | (11) |
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298 | (7) |
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10 Electrostatic and RF-properties of MEMS structures |
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305 | (20) |
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305 | (1) |
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10.2 Model system for a dynamic micromechanical device |
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305 | (3) |
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10.3 Electrical equivalent circuit |
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308 | (1) |
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309 | (2) |
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10.5 Electromechanical coupling |
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311 | (1) |
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312 | (1) |
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312 | (1) |
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10.8 Parasitic capacitance |
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313 | (1) |
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10.9 Effect of built-in potential on capacitively coupled MEMS-devices |
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314 | (1) |
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10.10 Short-range quantum-mechanical effects on nano- and micromechanical structures |
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314 | (3) |
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10.11 Further effects of electrostatic nonlinearities from applications point of view |
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317 | (1) |
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10.12 Application example: capacitively coupled reference oscillator |
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318 | (3) |
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321 | (4) |
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322 | (1) |
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323 | (1) |
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324 | (1) |
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11 Optical modeling of MEMS |
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325 | (20) |
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325 | (1) |
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11.2 Optical properties of silicon and related materials |
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325 | (2) |
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11.3 Theoretical background |
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327 | (8) |
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11.4 Numerical modeling methods for optical MEMS |
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335 | (10) |
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343 | (2) |
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12 Modeling of silicon etching |
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345 | (22) |
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345 | (1) |
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12.2 Requirements for modeling micromachining |
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346 | (1) |
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12.3 Micromachining as a front propagation problem |
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347 | (1) |
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12.4 Anisotropic etching: geometrical simulators |
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348 | (2) |
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12.5 Anisotropic etching: atomistic simulators |
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350 | (10) |
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12.6 A survey of etching simulators |
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360 | (7) |
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364 | (3) |
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13 Gas damping in vibrating MEMS structures |
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367 | (20) |
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367 | (1) |
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13.2 Damping dominated by gas viscosity |
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367 | (11) |
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13.3 First-order frequency dependencies |
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378 | (3) |
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13.4 Viscoacoustic models |
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381 | (1) |
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381 | (6) |
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383 | (4) |
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14 Recent progress in large-scale electronic state calculations and data-driven sciences |
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387 | (12) |
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14.1 Tutorial of large-scale electronic state calculations |
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387 | (1) |
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14.2 Fracture simulation by large-scale electronic state calculation |
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388 | (4) |
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14.3 Material simulations based on data-driven science |
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392 | (7) |
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395 | (4) |
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Part III Micromachining Technologies in MEMS |
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399 | (18) |
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15.1 Lithography considerations before wafer processing |
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399 | (1) |
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15.2 Wafers in lithography process |
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400 | (6) |
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15.3 Processing after lithography |
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406 | (1) |
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15.4 Thick photoresist lithography |
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407 | (4) |
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15.5 Special lithography approaches |
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411 | (6) |
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414 | (2) |
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416 | (1) |
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16 Deep reactive ion etching |
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417 | (30) |
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417 | (1) |
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418 | (3) |
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16.3 Deep reactive ion etching processes |
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421 | (8) |
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16.4 Deep reactive ion etching advanced issues and challenges |
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429 | (7) |
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16.5 Deep reactive ion etching applications |
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436 | (4) |
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16.6 Post-deep reactive ion etching etch treatments |
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440 | (1) |
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16.7 Choosing between wet and dry etching |
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441 | (6) |
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442 | (4) |
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446 | (1) |
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17 Wet etching of silicon |
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447 | (34) |
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17.1 Basic description of anisotropic etching: faceting |
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447 | (3) |
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17.2 Beyond faceting: atomistic phenomena |
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450 | (6) |
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17.3 Beyond atomistics: electrochemistry |
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456 | (1) |
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17.4 Typical surface morphologies (I. Zubel and Miguel A. Gosalvez) |
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457 | (4) |
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17.5 Effects from silicon wafer features (Eeva Viinikka) |
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461 | (2) |
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17.6 Convex corner undercutting |
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463 | (1) |
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17.7 Examples of wet etching |
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464 | (1) |
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17.8 Popular wet etchants |
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465 | (5) |
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17.9 Temperature dependence of the etch rate |
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470 | (2) |
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17.10 Concentration dependence of the etch rate |
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472 | (2) |
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17.11 Other variables affecting the etch-rate values |
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474 | (1) |
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17.12 Experimental determination of etch rates |
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474 | (1) |
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17.13 Converting between different measures of concentration |
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475 | (6) |
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476 | (5) |
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18 Porous silicon-based MEMS |
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481 | (22) |
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18.1 Porous silicon background |
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481 | (1) |
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18.2 Porous silicon sacrificial layer technologies |
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481 | (1) |
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18.3 Porous silicon fabrication technology |
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482 | (2) |
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18.4 Microscopic processes underlying porous silicon formation |
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484 | (4) |
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18.5 Formation of silicon microstructures |
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488 | (7) |
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18.6 Application examples |
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495 | (5) |
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18.7 Summary and conclusion |
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500 | (3) |
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500 | (2) |
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502 | (1) |
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19 Surface micromachining |
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503 | (16) |
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19.1 Polycrystalline silicon based micromachining |
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503 | (3) |
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19.2 Integration concepts |
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506 | (1) |
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19.3 Metallic microelectromechanical systems |
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507 | (3) |
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19.4 Silicon-on-insulator wafer---based surface micromachining |
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510 | (9) |
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516 | (3) |
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20 Vapor-phase etch processes for silicon MEMS |
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519 | (12) |
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20.1 Vapor-phase etch technologies |
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519 | (1) |
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20.2 Vapor HF technology for MEMS release |
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519 | (5) |
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20.3 XeF2 technology for MEMS release |
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524 | (7) |
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528 | (3) |
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21 Inkjet printing, laser-based micromachining, and micro---3D printing technologies for MEMS |
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531 | (16) |
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21.1 Inkjet printing for MEMS fabrication |
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531 | (2) |
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21.2 3D micromachining using laser ablation |
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533 | (2) |
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21.3 3D micromachining of glass using laser writing and etching |
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535 | (1) |
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21.4 3D printing using micro-laser sintering |
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536 | (1) |
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21.5 3D printing based on single-photon polymerization---microstereolithography |
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537 | (1) |
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21.6 3D printing based on two-photon polymerization---3D direct laser writing |
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538 | (1) |
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21.7 3D micromachining by focused ion beam milling |
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538 | (2) |
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21.8 3D micromachining by focused ion beam and e-beam---assisted deposition |
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540 | (1) |
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21.9 3D micromachining using scanning probe lithography |
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540 | (1) |
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21.10 Emerging 3D printing technologies for micro- and nanostructures |
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541 | (6) |
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543 | (2) |
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545 | (2) |
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22 Microfluidics and bioMEMS in silicon |
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547 | (20) |
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22.1 Silicon properties and machining |
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547 | (1) |
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22.2 Silicon as a molding master |
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548 | (1) |
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549 | (1) |
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549 | (3) |
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22.5 Silicon based gas chromatography |
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552 | (4) |
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22.6 Electrophoresis of biomolecules in silicon based sieves |
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556 | (3) |
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22.7 Microfluidics integration with CMOS |
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559 | (8) |
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560 | (1) |
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560 | (7) |
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Part IV Encapsulation and Integration of MEMS |
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23 Silicon direct bonding |
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567 | (14) |
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23.1 Hydrophilic high-temperature wafer bonding |
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567 | (2) |
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23.2 Hydrophobic high-temperature bonding of silicon |
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569 | (1) |
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23.3 Low-temperature direct bonding of silicon |
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569 | (6) |
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23.4 Direct bonding of chemical vapor---deposited oxides |
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575 | (3) |
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23.5 Direct bonding of chemical vapor---deposited silicon |
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578 | (3) |
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579 | (2) |
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581 | (12) |
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581 | (1) |
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24.2 The mechanism of the anodic bonding |
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581 | (2) |
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24.3 Other material combinations |
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583 | (1) |
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24.4 Glasses for anodic bonding |
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583 | (1) |
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584 | (1) |
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24.6 Bond quality, failure modes, and characterization |
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585 | (1) |
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24.7 The thermal residual stress |
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585 | (1) |
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24.8 The pressure inside vacuum-sealed cavities |
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586 | (1) |
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24.9 The effect of the anodic bonding on the flexible micromachined structures |
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587 | (1) |
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588 | (1) |
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24.11 Bonding with thin films |
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588 | (1) |
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589 | (4) |
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590 | (2) |
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592 | (1) |
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593 | (16) |
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593 | (1) |
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25.2 Glass frit materials |
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593 | (2) |
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595 | (2) |
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25.4 Thermal conditioning |
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597 | (1) |
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598 | (3) |
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601 | (1) |
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602 | (4) |
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25.8 Conductive glass frit bonding |
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606 | (1) |
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25.9 Cost of glass frit bonding |
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607 | (2) |
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607 | (1) |
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608 | (1) |
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26 Metallic alloy seal bonding |
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609 | (18) |
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609 | (1) |
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26.2 Properties of metallic seal bonds |
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609 | (1) |
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26.3 Metal systems and joint design |
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610 | (1) |
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611 | (1) |
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612 | (4) |
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26.6 Transient liquid-phase bonding |
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616 | (3) |
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26.7 Thermocompression bonding |
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619 | (2) |
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26.8 Ultrathin metal film bonding |
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621 | (1) |
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621 | (1) |
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26.10 Metallic seal ring design and process technology |
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622 | (5) |
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624 | (3) |
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27 Emerging wafer bonding technologies |
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627 | (14) |
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27.1 Room temperature wafer bonding |
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627 | (4) |
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27.2 Permanent adhesive wafer bonding |
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631 | (3) |
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27.3 Temporary wafer bonding |
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634 | (7) |
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638 | (3) |
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28 Bonding of CMOS processed wafers |
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641 | (10) |
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28.1 General aspects, requirements, and limitations of CMOS-compatible wafer bonding |
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642 | (1) |
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28.2 CMOS-compatible low temperature wafer direct bonding |
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643 | (1) |
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28.3 Anodic bonding of CMOS-processed wafers |
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644 | (2) |
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28.4 CMOS wafer glass frit bonding |
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646 | (2) |
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28.5 Adhesive bonding of CMOS wafers |
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648 | (1) |
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28.6 General aspects of bonding CMOS wafers |
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649 | (1) |
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650 | (1) |
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650 | (1) |
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29 Wafer-bonding equipment |
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651 | (18) |
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29.1 Aligned wafer-bonding requirements for MEMS applications |
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653 | (2) |
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29.2 Wafer-to-wafer aligners |
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655 | (3) |
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658 | (5) |
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29.4 Aligned wafer bonding: equipment solutions for MEMS manufacturing |
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663 | (2) |
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29.5 The future of wafer-bonding equipment solutions for MEMS manufacturing |
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665 | (4) |
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667 | (2) |
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30 Encapsulation by film deposition |
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669 | (8) |
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669 | (1) |
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669 | (1) |
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30.3 Technologies and methods |
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670 | (4) |
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30.4 Application: encapsulated resonators for frequency references |
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674 | (1) |
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674 | (3) |
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674 | (3) |
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31 Dicing of MEMS devices |
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677 | (14) |
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|
677 | (1) |
|
|
677 | (1) |
|
31.3 Process flow and methods of dicing |
|
|
677 | (2) |
|
|
679 | (1) |
|
|
680 | (1) |
|
|
680 | (2) |
|
|
682 | (1) |
|
Subchapter: Plasma dicing |
|
|
682 | (1) |
|
31.8 Introduction to plasma dicing |
|
|
682 | (1) |
|
31.9 Plasma dicing process overview |
|
|
683 | (1) |
|
31.10 Plasma dicing---advantages and benefits of the process |
|
|
683 | (1) |
|
31.11 Plasma dicing---limitations and challenges |
|
|
684 | (1) |
|
31.12 Plasma dicing---processing details |
|
|
684 | (2) |
|
31.13 Plasma dicing---MEMS example |
|
|
686 | (1) |
|
31.14 Plasma dicing---methodologies |
|
|
686 | (2) |
|
31.15 Plasma dicing---device side versus back side processing |
|
|
688 | (1) |
|
31.16 Plasma dicing---postprocessing cleaning |
|
|
688 | (1) |
|
31.17 Plasma dicing---quality characterization parameters |
|
|
688 | (3) |
|
|
688 | (3) |
|
32 Three-dimensional integration of MEMS |
|
|
691 | (16) |
|
|
|
|
691 | (1) |
|
32.2 The three levels of MEMS packaging |
|
|
691 | (2) |
|
|
693 | (3) |
|
32.4 From cavities to surface mountable devices |
|
|
696 | (1) |
|
32.5 From device packaging to system in package and three-dimensional |
|
|
697 | (6) |
|
32.6 Low-stress packaging |
|
|
703 | (2) |
|
|
705 | (2) |
|
|
705 | (2) |
|
33 Fan-out wafer-level packaging as packaging technology for MEMS |
|
|
707 | (14) |
|
|
|
|
|
707 | (2) |
|
33.2 Fan-out wafer-level packaging as system-in-package technology |
|
|
709 | (1) |
|
33.3 Fan-out wafer-level packaging applied to MEMS devices |
|
|
710 | (3) |
|
|
713 | (8) |
|
|
719 | (2) |
|
34 Through-substrate vias based three-dimensional interconnection technology |
|
|
721 | (22) |
|
|
|
|
34.1 Through-silicon vias |
|
|
721 | (1) |
|
34.2 Classification of through-silicon vias |
|
|
721 | (2) |
|
34.3 Various processing steps in through-silicon vias fabrication |
|
|
723 | (5) |
|
34.4 Overview of various through-silicon vias technologies |
|
|
728 | (8) |
|
34.5 Reliability of through-silicon vias |
|
|
736 | (2) |
|
34.6 Future outlook of through-silicon vias for micro-electro-mechanical-systems |
|
|
738 | (5) |
|
|
739 | (4) |
|
35 Outgassing and gettering |
|
|
743 | (22) |
|
|
|
|
|
|
|
|
|
743 | (1) |
|
35.2 Gas sources into microelectromechanical systems devices |
|
|
744 | (4) |
|
35.3 Residual gas analysis for microelectromechanical systems |
|
|
748 | (1) |
|
|
749 | (2) |
|
35.5 Getter films for microelectromechanical systems devices |
|
|
751 | (7) |
|
|
758 | (3) |
|
|
761 | (4) |
|
|
761 | (4) |
|
Part V Characterization of MEMS |
|
|
|
36 Silicon wafer and thin-film measurements |
|
|
765 | (10) |
|
|
36.1 Important measurements |
|
|
765 | (1) |
|
|
765 | (1) |
|
|
766 | (4) |
|
36.4 Thickness of thin films |
|
|
770 | (5) |
|
|
774 | (1) |
|
37 Measuring oxygen and bulk microdefects in silicon |
|
|
775 | (6) |
|
|
|
|
|
775 | (1) |
|
37.2 Measuring interstitial and total oxygen concentration |
|
|
775 | (1) |
|
37.3 Measuring bulk microdefects |
|
|
776 | (5) |
|
|
779 | (2) |
|
38 Optical measurement of static and dynamic displacement in MEMS |
|
|
781 | (6) |
|
|
38.1 Camera-based measurements |
|
|
781 | (6) |
|
|
786 | (1) |
|
39 MEMS residual stress characterization: methodology and perspective |
|
|
787 | (16) |
|
|
|
|
787 | (2) |
|
39.2 Microelectromechanical systems residual stress characterization techniques |
|
|
789 | (7) |
|
39.3 Perspective and conclusion |
|
|
796 | (7) |
|
|
797 | (6) |
|
40 Microscale deformation analysis |
|
|
803 | (20) |
|
|
|
|
40.1 The importance of local deformation measurements |
|
|
803 | (2) |
|
40.2 Software tools applying digital image correlation |
|
|
805 | (5) |
|
40.3 Examples of deformation measurement |
|
|
810 | (1) |
|
40.4 Local measurement of intrinsic stress |
|
|
811 | (7) |
|
40.5 Measurement of elastic material properties on devices |
|
|
818 | (5) |
|
|
820 | (3) |
|
41 Strength of bonded interfaces |
|
|
823 | (10) |
|
|
|
|
|
823 | (1) |
|
41.2 Solid and fracture mechanics |
|
|
823 | (1) |
|
41.3 Double cantilever beam test method |
|
|
824 | (1) |
|
|
825 | (1) |
|
|
826 | (1) |
|
41.6 Chevron test structures |
|
|
827 | (1) |
|
41.7 Bond strength testing of anodic bonded wafers using patterned step-like structures |
|
|
827 | (3) |
|
41.8 Reliability and time-dependent strength |
|
|
830 | (1) |
|
|
831 | (2) |
|
|
831 | (1) |
|
|
832 | (1) |
|
|
833 | (12) |
|
|
|
|
|
833 | (1) |
|
42.2 Basics of leakage measurement |
|
|
833 | (2) |
|
42.3 Classification of leak rates |
|
|
835 | (1) |
|
42.4 Leakage test methods |
|
|
836 | (6) |
|
42.5 Getter pumps in microelectromechanical system packages |
|
|
842 | (3) |
|
|
842 | (3) |
|
43 MEMS testing and calibration |
|
|
845 | (6) |
|
|
|
845 | (1) |
|
43.2 Final testing and calibration |
|
|
846 | (4) |
|
43.3 Future trends and challenges in MEMS testing |
|
|
850 | (1) |
|
|
851 | (28) |
|
|
|
|
|
44.1 Classification of microelectromechanical systems devices |
|
|
851 | (1) |
|
44.2 Failure mechanisms and acceleration factors |
|
|
852 | (6) |
|
44.3 Reliability of hermetic encapsulation |
|
|
858 | (2) |
|
44.4 Reliability testing of microelectromechanical systems devices |
|
|
860 | (4) |
|
44.5 Methods of failure analysis |
|
|
864 | (3) |
|
44.6 Design for reliability |
|
|
867 | (2) |
|
|
869 | (10) |
|
|
871 | (8) |
|
Part VI Silicon wafers preparation and properties |
|
|
|
|
879 | (20) |
|
|
|
|
|
879 | (1) |
|
45.2 Accelerometers operating principles |
|
|
880 | (10) |
|
|
890 | (1) |
|
45.4 Examples of fabrication technologies |
|
|
891 | (3) |
|
|
894 | (5) |
|
|
895 | (4) |
|
|
899 | (16) |
|
|
|
|
|
899 | (1) |
|
46.2 Gyroscopes applications |
|
|
899 | (1) |
|
46.3 Gyroscope performance requirements |
|
|
900 | (1) |
|
46.4 Gyroscope working principles and architecture design |
|
|
901 | (3) |
|
46.5 Gyroscope technology architecture: key features and integration requirements |
|
|
904 | (4) |
|
46.6 System integration example: STMicroelectronics THELMA technology platform |
|
|
908 | (3) |
|
46.7 Packaging and calibration |
|
|
911 | (2) |
|
|
913 | (2) |
|
|
913 | (2) |
|
|
915 | (22) |
|
|
|
|
|
915 | (1) |
|
47.2 Mechanical transducers |
|
|
916 | (1) |
|
47.3 Capacitive pressure sensors |
|
|
917 | (8) |
|
47.4 Piezoresistive pressure sensors |
|
|
925 | (9) |
|
|
934 | (3) |
|
|
934 | (3) |
|
|
937 | (12) |
|
|
|
937 | (1) |
|
48.2 Microphone applications and performance parameter |
|
|
937 | (1) |
|
48.3 Microphone technologies |
|
|
938 | (2) |
|
48.4 Capacitive microelectromechanical systems microphone process flow |
|
|
940 | (1) |
|
48.5 Design and technology of microphone membranes |
|
|
941 | (2) |
|
48.6 Scaling the membrane size to increase signal-to-noise ratio |
|
|
943 | (1) |
|
48.7 Differential microelectromechanical systems sensor for low total harmonic distortion and high AOP |
|
|
944 | (2) |
|
48.8 Sealed dual membrane microphone for highest performance |
|
|
946 | (1) |
|
|
947 | (2) |
|
|
947 | (2) |
|
|
949 | (20) |
|
|
|
49.1 Introduction: micro-opto-mechanical-systems and their fields of application |
|
|
949 | (1) |
|
49.2 Electrostatically driven micro scanning mirrors fabricated by bulk micromachining |
|
|
949 | (11) |
|
49.3 Micro mirror arrays manufactured using surface micromachining |
|
|
960 | (7) |
|
|
967 | (2) |
|
|
968 | (1) |
|
50 MEMS-above CMOS and novel optical MEMS sensor concepts |
|
|
969 | (16) |
|
|
|
|
|
|
|
|
|
|
|
|
969 | (1) |
|
50.2 Monolithic SiCeMEMS-CMOS integration |
|
|
969 | (5) |
|
50.3 MEMS sensor with integrated optical readout |
|
|
974 | (8) |
|
|
982 | (3) |
|
|
984 | (1) |
Index |
|
985 | |