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E-raamat: Handbook of Silicon Based MEMS Materials and Technologies

Edited by , Edited by (Director and Senior Vice President of Research, Okmetic, Finland (retired)), Edited by (Aalto University, School of Electrical Engineering, Finland), Edited by (Professor, Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany), Edited by , Edited by
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  • Ilmumisaeg: 17-Apr-2020
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  • ISBN-13: 9780128177877
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  • Kirjastus: Elsevier Science Publishing Co Inc
  • Keel: eng
  • ISBN-13: 9780128177877
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Handbook of Silicon Based MEMS Materials and Technologies, Third Edition is a comprehensive guide to MEMS materials, technologies and manufacturing that examines the state-of-the-art, with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, manufacturing, processing, system integration, measurement, materials characterization techniques, sensors, and multiscale modeling methods of MEMS structures, silicon crystals and wafers, also covering micromachining technologies in MEMS and encapsulation of MEMS components.

This new edition provides coverage of innovative 3D packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques, shows how to protect devices from the environment, and provides tactics to decrease package size for a dramatic reduction in costs. The new edition includes coverage of new processing techniques, emerging water bonding techniques, and reliability that were not included in the previous edition. A new section on process integration features numerous case studies, showing how MEMS technology is being used in industry.

  • Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding and related techniques
  • Shows how to protect devices from the environment and decrease package size for a dramatic reduction in packaging costs
  • Discusses properties, preparation and growth of silicon crystals and wafers
  • Explains the many properties (mechanical, electrostatic, optical, etc.), manufacturing, processing, measuring (including focused beam techniques), and multiscale modeling methods of MEMS structures
  • Geared towards practical applications rather than theory
List of contributors
xv
Preface xix
Where is silicon based MEMS heading to? xxi
Part I Silicon as MEMS Material
1 Properties of silicon
3(16)
Markku Tilli
Atte Haapalinna
1.1 Properties of silicon
3(13)
References
16(3)
2 Czochralski growth of silicon crystals
19(42)
Olli Anttila
2.1 The Czochralski crystal-growing furnace
19(4)
2.2 Stages of growth process
23(5)
2.3 Selected issues of crystal growth
28(3)
2.4 Improved thermal and gas-flow designs
31(1)
2.5 Heat transfer
32(1)
2.6 Melt convection
33(5)
2.7 Magnetic fields
38(3)
2.8 Hot recharging and continuous feed
41(2)
2.9 Heavily n-type doped silicon and constitutional supercooling
43(5)
2.10 Growth of large diameter crystals
48(13)
References
58(2)
Further reading
60(1)
3 Properties of silicon crystals
61(32)
Jari Paloheimo
3.1 Dopants and impurities
61(2)
3.2 Typical impurity concentrations
63(2)
3.3 Concentration of dopants and impurities in axial direction
65(2)
3.4 Resistivity
67(3)
3.5 Radial variation of impurities and resistivity
70(2)
3.6 Thermal donors
72(3)
3.7 Defects in silicon crystals
75(4)
3.8 Control of vacancies, interstitials, and the oxidation-induced stacking fault ring
79(3)
3.9 Oxygen precipitation
82(6)
3.10 Conclusion
88(5)
Acknowledgments
89(1)
References
89(4)
4 Silicon wafers preparation and properties
93(18)
Markku Tilli
4.1 Silicon wafer manufacturing process
93(10)
4.2 Standard measurements of polished wafers
103(2)
4.3 Sample specifications of microelectromechanical systems wafers
105(1)
4.4 Standards of silicon wafers
105(6)
References
109(2)
5 Epi wafers: preparation and properties
111(22)
Doug Meyer
5.1 Silicon epitaxy for MEMS
111(1)
5.2 Silicon epitaxy---the basics
111(6)
5.3 The epi---poly process
117(1)
5.4 Etch stop layers
118(2)
5.5 Epi on silicon on insulator substrates
120(1)
5.6 Selective epitaxy and epitaxial layer overgrowth
121(1)
5.7 Considerations for chemical mechanical polishing
122(1)
5.8 Metrology
122(5)
5.9 Commercially available epitaxy systems
127(2)
5.10 Summary
129(4)
References
130(3)
6 Thin films on silicon
133(82)
6.1 Thin films on silicon: silicon dioxide
133(11)
Simo Eranen
6.1.1 Introduction
133(1)
6.1.2 Growth methods of silicon dioxide
133(8)
6.1.3 Structure and properties of silicon dioxides
141(1)
6.1.4 Processing of silicon dioxides
142(1)
References
143(1)
6.2 Thin films on silicon: silicon nitride
144(6)
Pekka Torma
6.2.1 Introduction
144(1)
6.2.2 Growth of silicon nitride
144(3)
6.2.3 Structure and properties of silicon nitride
147(1)
6.2.4 Processing of silicon nitride
147(3)
References
150(1)
6.3 Thin films on silicon: poly-SiGe for MEMS-above-CMOS applications
150(13)
Pilar Gonzalez
Xavier Rottenberg
6.3.1 Introduction
150(1)
6.3.2 Material properties of poly-SiGe
151(2)
6.3.3 Poly-SiGe microelectromechanical systems manufacturing
153(5)
6.3.4 SiGe microelectromechanical systems demonstrators
158(2)
6.3.5 Conclusion and future poly-SiGe research
160(1)
References
161(2)
6.4 Atomic layer deposition of thin films
163(11)
Riikka L. Puurunen
Matti Putkonen
Mikael Broas
6.4.1 Introduction
163(1)
6.4.2 Operation principles of atomic layer deposition
164(1)
6.4.3 Atomic layer deposition processes and materials
165(2)
6.4.4 Molecular layer deposition
167(1)
6.4.5 Characteristics of atomic layer deposition processes and films
167(4)
6.4.6 Atomic layer deposition reactors
171(1)
6.4.7 Summary
172(1)
References
173(1)
Further reading
174(1)
6.5 Piezoelectric thin film materials for microelectromechanical systems
174(12)
Andreas Vogl
Frode Tyholdt
Hannah Tofteberg
Paul Muralt
Elmeri Osterlund
6.5.1 Introduction
174(1)
6.5.2 Short introduction to piezoelectric theory and important thin-film constants
175(1)
6.7.3 AIN
176(2)
6.5.4 PZT
178(5)
6.5.5 Other (future?) piezoelectric materials for microelectromechanical systems
183(1)
References
183(3)
6.6 Black silicon
186(10)
Toni P. Pasanen
6.6.1 Introduction
186(1)
6.6.2 Fabrication methods
186(2)
6.6.3 Characteristic properties
188(3)
6.6.4 Applications
191(3)
References
194(2)
6.7 Thin films for antistiction
196(19)
Yuyuan Lin
Michael Grimes
6.7.1 Introduction
196(2)
6.7.2 Typical characterization techniques
198(1)
6.7.3 Self-assembled monolayers
199(6)
6.7.4 Ceramic coatings
205(1)
6.7.5 Fluoropolymer coatings
206(2)
6.7.7 Summary
208(1)
References
209(6)
7 Thick-film silicon-on-insulator wafers preparation and properties
215(34)
Jari Makinen
Tommi Suni
7.1 Introduction
215(1)
7.2 Overview of silicon-on-insulator
215(5)
7.3 Silicon wafer parameters for direct bonding
220(3)
7.4 Fabrication of thick-film BSOI by mechanical grinding and polishing
223(13)
7.5 Bonding and etch-back silicon-on-insulator process
236(2)
7.6 Techniques based on thin-film silicon-on-insulator and silicon epitaxy
238(4)
7.7 Silicon-on-insulator wafers with buried cavities
242(2)
7.8 Silicon-on-insulator wafers with buried atomic layer deposition thin film
244(1)
7.9 Conclusion
244(5)
References
245(4)
Part II Modeling in MEMS
8 Multiscale modeling methods
249(14)
Teruaki Motooka
Tsuyoshi Uda
8.1 Macroscopic and microscopic equations
249(1)
8.2 Computational methods and practical examples
250(4)
8.3 First-principles calculation method
254(6)
8.4 Concluding remarks
260(3)
References
260(3)
9 Mechanical properties of silicon microstructures
263(42)
Maria Ganchenkova
Risto M. Nieminen
9.1 Basic structural properties of crystalline silicon
263(8)
9.2 Dislocations in silicon
271(14)
9.3 Physical mechanisms of fracture in silicon
285(9)
9.4 Physical mechanisms of fatigue of silicon
294(11)
References
298(7)
10 Electrostatic and RF-properties of MEMS structures
305(20)
Ilkka Tittonen
Mika Koskenvuori
10.1 Introduction
305(1)
10.2 Model system for a dynamic micromechanical device
305(3)
10.3 Electrical equivalent circuit
308(1)
10.4 Electrostatic force
309(2)
10.5 Electromechanical coupling
311(1)
10.6 Sensing of motion
312(1)
10.7 Pull-in phenomenon
312(1)
10.8 Parasitic capacitance
313(1)
10.9 Effect of built-in potential on capacitively coupled MEMS-devices
314(1)
10.10 Short-range quantum-mechanical effects on nano- and micromechanical structures
314(3)
10.11 Further effects of electrostatic nonlinearities from applications point of view
317(1)
10.12 Application example: capacitively coupled reference oscillator
318(3)
10.13 RF-properties
321(4)
Acknowledgments
322(1)
References
323(1)
Further reading
324(1)
11 Optical modeling of MEMS
325(20)
Timo Aalto
Juuso Olkkonen
11.1 Introduction
325(1)
11.2 Optical properties of silicon and related materials
325(2)
11.3 Theoretical background
327(8)
11.4 Numerical modeling methods for optical MEMS
335(10)
References
343(2)
12 Modeling of silicon etching
345(22)
Miguel A. Gosalvez
12.1 Introduction
345(1)
12.2 Requirements for modeling micromachining
346(1)
12.3 Micromachining as a front propagation problem
347(1)
12.4 Anisotropic etching: geometrical simulators
348(2)
12.5 Anisotropic etching: atomistic simulators
350(10)
12.6 A survey of etching simulators
360(7)
References
364(3)
13 Gas damping in vibrating MEMS structures
367(20)
Timo Veijola
13.1 Introduction
367(1)
13.2 Damping dominated by gas viscosity
367(11)
13.3 First-order frequency dependencies
378(3)
13.4 Viscoacoustic models
381(1)
13.5 Simulation tools
381(6)
References
383(4)
14 Recent progress in large-scale electronic state calculations and data-driven sciences
387(12)
Takeo Hoshi
Satoshi Itoh
14.1 Tutorial of large-scale electronic state calculations
387(1)
14.2 Fracture simulation by large-scale electronic state calculation
388(4)
14.3 Material simulations based on data-driven science
392(7)
References
395(4)
Part III Micromachining Technologies in MEMS
15 MEMS lithography
399(18)
Sami Franssila
Santeri Tuomikoski
15.1 Lithography considerations before wafer processing
399(1)
15.2 Wafers in lithography process
400(6)
15.3 Processing after lithography
406(1)
15.4 Thick photoresist lithography
407(4)
15.5 Special lithography approaches
411(6)
References
414(2)
Further reading
416(1)
16 Deep reactive ion etching
417(30)
Franz Laermer
Sami Franssila
Lauri Sainiemi
Kai Kolari
16.1 Etch chemistries
417(1)
16.2 Equipment
418(3)
16.3 Deep reactive ion etching processes
421(8)
16.4 Deep reactive ion etching advanced issues and challenges
429(7)
16.5 Deep reactive ion etching applications
436(4)
16.6 Post-deep reactive ion etching etch treatments
440(1)
16.7 Choosing between wet and dry etching
441(6)
References
442(4)
Further reading
446(1)
17 Wet etching of silicon
447(34)
Miguel A. Gosalvez
I. Zubel
Eeva Viinikka
17.1 Basic description of anisotropic etching: faceting
447(3)
17.2 Beyond faceting: atomistic phenomena
450(6)
17.3 Beyond atomistics: electrochemistry
456(1)
17.4 Typical surface morphologies (I. Zubel and Miguel A. Gosalvez)
457(4)
17.5 Effects from silicon wafer features (Eeva Viinikka)
461(2)
17.6 Convex corner undercutting
463(1)
17.7 Examples of wet etching
464(1)
17.8 Popular wet etchants
465(5)
17.9 Temperature dependence of the etch rate
470(2)
17.10 Concentration dependence of the etch rate
472(2)
17.11 Other variables affecting the etch-rate values
474(1)
17.12 Experimental determination of etch rates
474(1)
17.13 Converting between different measures of concentration
475(6)
References
476(5)
18 Porous silicon-based MEMS
481(22)
Gerhard Muller
Alois Friedberger
Kathrin Knese
18.1 Porous silicon background
481(1)
18.2 Porous silicon sacrificial layer technologies
481(1)
18.3 Porous silicon fabrication technology
482(2)
18.4 Microscopic processes underlying porous silicon formation
484(4)
18.5 Formation of silicon microstructures
488(7)
18.6 Application examples
495(5)
18.7 Summary and conclusion
500(3)
References
500(2)
Further reading
502(1)
19 Surface micromachining
503(16)
Christina Leinenbach
Hannu Kattelus
Roy Knechtel
19.1 Polycrystalline silicon based micromachining
503(3)
19.2 Integration concepts
506(1)
19.3 Metallic microelectromechanical systems
507(3)
19.4 Silicon-on-insulator wafer---based surface micromachining
510(9)
References
516(3)
20 Vapor-phase etch processes for silicon MEMS
519(12)
Paul Hammond
20.1 Vapor-phase etch technologies
519(1)
20.2 Vapor HF technology for MEMS release
519(5)
20.3 XeF2 technology for MEMS release
524(7)
References
528(3)
21 Inkjet printing, laser-based micromachining, and micro---3D printing technologies for MEMS
531(16)
Andreas C. Fischer
Matti Mantysalo
Frank Niklaus
21.1 Inkjet printing for MEMS fabrication
531(2)
21.2 3D micromachining using laser ablation
533(2)
21.3 3D micromachining of glass using laser writing and etching
535(1)
21.4 3D printing using micro-laser sintering
536(1)
21.5 3D printing based on single-photon polymerization---microstereolithography
537(1)
21.6 3D printing based on two-photon polymerization---3D direct laser writing
538(1)
21.7 3D micromachining by focused ion beam milling
538(2)
21.8 3D micromachining by focused ion beam and e-beam---assisted deposition
540(1)
21.9 3D micromachining using scanning probe lithography
540(1)
21.10 Emerging 3D printing technologies for micro- and nanostructures
541(6)
References
543(2)
Further reading
545(2)
22 Microfluidics and bioMEMS in silicon
547(20)
Sami Franssila
Cristina E. Davis
Michael K. LeVasseur
Zhen Cao
Levent Yobas
22.1 Silicon properties and machining
547(1)
22.2 Silicon as a molding master
548(1)
22.3 Needles and nozzles
549(1)
22.4 Microreactors
549(3)
22.5 Silicon based gas chromatography
552(4)
22.6 Electrophoresis of biomolecules in silicon based sieves
556(3)
22.7 Microfluidics integration with CMOS
559(8)
Acknowledgments
560(1)
References
560(7)
Part IV Encapsulation and Integration of MEMS
23 Silicon direct bonding
567(14)
Thomas Plach
Kimmo Henttinen
Tommi Suni
Viorel Dragoi
23.1 Hydrophilic high-temperature wafer bonding
567(2)
23.2 Hydrophobic high-temperature bonding of silicon
569(1)
23.3 Low-temperature direct bonding of silicon
569(6)
23.4 Direct bonding of chemical vapor---deposited oxides
575(3)
23.5 Direct bonding of chemical vapor---deposited silicon
578(3)
References
579(2)
24 Anodic bonding
581(12)
Adriana Cozma
Henrik Jakobsen
24.1 Introduction
581(1)
24.2 The mechanism of the anodic bonding
581(2)
24.3 Other material combinations
583(1)
24.4 Glasses for anodic bonding
583(1)
24.5 Bonding parameters
584(1)
24.6 Bond quality, failure modes, and characterization
585(1)
24.7 The thermal residual stress
585(1)
24.8 The pressure inside vacuum-sealed cavities
586(1)
24.9 The effect of the anodic bonding on the flexible micromachined structures
587(1)
24.10 Electrical effects
588(1)
24.11 Bonding with thin films
588(1)
24.12 Conclusion
589(4)
References
590(2)
Further reading
592(1)
25 Glass frit bonding
593(16)
Roy Knechtel
Sophia Dempwolf
Marc Schikowski
25.1 Bonding principle
593(1)
25.2 Glass frit materials
593(2)
25.3 Screen printing
595(2)
25.4 Thermal conditioning
597(1)
25.5 Bonding process
598(3)
25.6 Physics of bonding
601(1)
25.7 Characteristics
602(4)
25.8 Conductive glass frit bonding
606(1)
25.9 Cost of glass frit bonding
607(2)
References
607(1)
Additional reference
608(1)
26 Metallic alloy seal bonding
609(18)
Wolfgang Reinert
Amit Kulkarni
Vesa Vuorinen
Fabian Lofink
Peter Merz
26.1 Introduction
609(1)
26.2 Properties of metallic seal bonds
609(1)
26.3 Metal systems and joint design
610(1)
26.4 Soft soldering
611(1)
26.5 Eutectic bonding
612(4)
26.6 Transient liquid-phase bonding
616(3)
26.7 Thermocompression bonding
619(2)
26.8 Ultrathin metal film bonding
621(1)
26.9 Reaction bonding
621(1)
26.10 Metallic seal ring design and process technology
622(5)
References
624(3)
27 Emerging wafer bonding technologies
627(14)
Viorel Dragoi
Christoph Flotgen
J. Burggraf
Laura Oggioni
Tadatomo Suga
27.1 Room temperature wafer bonding
627(4)
27.2 Permanent adhesive wafer bonding
631(3)
27.3 Temporary wafer bonding
634(7)
References
638(3)
28 Bonding of CMOS processed wafers
641(10)
Roy Knechtel
Sebastian Wicht
28.1 General aspects, requirements, and limitations of CMOS-compatible wafer bonding
642(1)
28.2 CMOS-compatible low temperature wafer direct bonding
643(1)
28.3 Anodic bonding of CMOS-processed wafers
644(2)
28.4 CMOS wafer glass frit bonding
646(2)
28.5 Adhesive bonding of CMOS wafers
648(1)
28.6 General aspects of bonding CMOS wafers
649(1)
28.7 Conclusion
650(1)
References
650(1)
29 Wafer-bonding equipment
651(18)
Viorel Dragoi
Paul F. Lindner
29.1 Aligned wafer-bonding requirements for MEMS applications
653(2)
29.2 Wafer-to-wafer aligners
655(3)
29.3 Wafer bonders
658(5)
29.4 Aligned wafer bonding: equipment solutions for MEMS manufacturing
663(2)
29.5 The future of wafer-bonding equipment solutions for MEMS manufacturing
665(4)
References
667(2)
30 Encapsulation by film deposition
669(8)
Rob N. Candler
Paul Hagelin
Christopher Cameron
30.1 Introduction
669(1)
30.2 Packaging needs
669(1)
30.3 Technologies and methods
670(4)
30.4 Application: encapsulated resonators for frequency references
674(1)
30.5 Summary
674(3)
References
674(3)
31 Dicing of MEMS devices
677(14)
Devin Martin
Scott Sullivan
Indranil Ronnie Bose
Christof Landesberger
Robert Wieland
31.1 Introduction
677(1)
31.2 History of dicing
677(1)
31.3 Process flow and methods of dicing
677(2)
31.4 Stealth dicing
679(1)
31.5 Full-cut dicing
680(1)
31.6 Effects of dicing
680(2)
31.7 Conclusions
682(1)
Subchapter: Plasma dicing
682(1)
31.8 Introduction to plasma dicing
682(1)
31.9 Plasma dicing process overview
683(1)
31.10 Plasma dicing---advantages and benefits of the process
683(1)
31.11 Plasma dicing---limitations and challenges
684(1)
31.12 Plasma dicing---processing details
684(2)
31.13 Plasma dicing---MEMS example
686(1)
31.14 Plasma dicing---methodologies
686(2)
31.15 Plasma dicing---device side versus back side processing
688(1)
31.16 Plasma dicing---postprocessing cleaning
688(1)
31.17 Plasma dicing---quality characterization parameters
688(3)
References
688(3)
32 Three-dimensional integration of MEMS
691(16)
Horst Theuss
Klaus Pressel
32.1 Introduction
691(1)
32.2 The three levels of MEMS packaging
691(2)
32.3 Cavity formation
693(3)
32.4 From cavities to surface mountable devices
696(1)
32.5 From device packaging to system in package and three-dimensional
697(6)
32.6 Low-stress packaging
703(2)
32.7 Conclusion
705(2)
References
705(2)
33 Fan-out wafer-level packaging as packaging technology for MEMS
707(14)
Heikki Kuisma
Andre Cardoso
Tanja Braun
33.1 Introduction
707(2)
33.2 Fan-out wafer-level packaging as system-in-package technology
709(1)
33.3 Fan-out wafer-level packaging applied to MEMS devices
710(3)
33.4 Case examples
713(8)
References
719(2)
34 Through-substrate vias based three-dimensional interconnection technology
721(22)
Pradeep Dixit
Harindra Kumar Kannojia
Kimmo Henttinen
34.1 Through-silicon vias
721(1)
34.2 Classification of through-silicon vias
721(2)
34.3 Various processing steps in through-silicon vias fabrication
723(5)
34.4 Overview of various through-silicon vias technologies
728(8)
34.5 Reliability of through-silicon vias
736(2)
34.6 Future outlook of through-silicon vias for micro-electro-mechanical-systems
738(5)
References
739(4)
35 Outgassing and gettering
743(22)
Enea Rizzi
Luca Mauri
Marco Moraja
Andrea Conte
Antonio Bonucci
Giorgio Longoni
Marco Amiotti
35.1 Introduction
743(1)
35.2 Gas sources into microelectromechanical systems devices
744(4)
35.3 Residual gas analysis for microelectromechanical systems
748(1)
35.4 Outgassing analysis
749(2)
35.5 Getter films for microelectromechanical systems devices
751(7)
35.6 Lifetime
758(3)
35.7 Conclusion
761(4)
References
761(4)
Part V Characterization of MEMS
36 Silicon wafer and thin-film measurements
765(10)
Veli-Matti Airaksinen
36.1 Important measurements
765(1)
36.2 Wafer shape
765(1)
36.3 Resistivity
766(4)
36.4 Thickness of thin films
770(5)
References
774(1)
37 Measuring oxygen and bulk microdefects in silicon
775(6)
Hele Savin
Gudrun Kissinger
Veli-Matti Airaksinen
37.1 Introduction
775(1)
37.2 Measuring interstitial and total oxygen concentration
775(1)
37.3 Measuring bulk microdefects
776(5)
References
779(2)
38 Optical measurement of static and dynamic displacement in MEMS
781(6)
David Horsley
38.1 Camera-based measurements
781(6)
References
786(1)
39 MEMS residual stress characterization: methodology and perspective
787(16)
Kuo-Shen Chen
Kuang-Shun Ou
39.1 Introduction
787(2)
39.2 Microelectromechanical systems residual stress characterization techniques
789(7)
39.3 Perspective and conclusion
796(7)
References
797(6)
40 Microscale deformation analysis
803(20)
Dietmar Vogel
Michael Dost
Juergen Auersperg
40.1 The importance of local deformation measurements
803(2)
40.2 Software tools applying digital image correlation
805(5)
40.3 Examples of deformation measurement
810(1)
40.4 Local measurement of intrinsic stress
811(7)
40.5 Measurement of elastic material properties on devices
818(5)
References
820(3)
41 Strength of bonded interfaces
823(10)
Orjan Vallin
Kerstin Jonsson
Roy Knechtel
41.1 Introduction
823(1)
41.2 Solid and fracture mechanics
823(1)
41.3 Double cantilever beam test method
824(1)
41.4 Tensile test method
825(1)
41.5 Blister test method
826(1)
41.6 Chevron test structures
827(1)
41.7 Bond strength testing of anodic bonded wafers using patterned step-like structures
827(3)
41.8 Reliability and time-dependent strength
830(1)
41.9 Summary and outlook
831(2)
References
831(1)
Further reading
832(1)
42 Hermeticity tests
833(12)
Dirk Kahler
Fabian Lofink
Wolfgang Reinert
42.1 Introduction
833(1)
42.2 Basics of leakage measurement
833(2)
42.3 Classification of leak rates
835(1)
42.4 Leakage test methods
836(6)
42.5 Getter pumps in microelectromechanical system packages
842(3)
References
842(3)
43 MEMS testing and calibration
845(6)
Vesa Henttonen
43.1 Front-end testing
845(1)
43.2 Final testing and calibration
846(4)
43.3 Future trends and challenges in MEMS testing
850(1)
44 MEMS reliability
851(28)
Lasse Skogstrom
Jue Li
Toni T. Manila
Vesa Vuorinen
44.1 Classification of microelectromechanical systems devices
851(1)
44.2 Failure mechanisms and acceleration factors
852(6)
44.3 Reliability of hermetic encapsulation
858(2)
44.4 Reliability testing of microelectromechanical systems devices
860(4)
44.5 Methods of failure analysis
864(3)
44.6 Design for reliability
867(2)
44.7 Further reading
869(10)
References
871(8)
Part VI Silicon wafers preparation and properties
45 Accelerometers
879(20)
Jean-Philippe Polizzi
Bruno Fain
Federico Maspero
45.1 Introduction
879(1)
45.2 Accelerometers operating principles
880(10)
45.3 Design parameters
890(1)
45.4 Examples of fabrication technologies
891(3)
45.5 Packaging aspects
894(5)
References
895(4)
46 Gyroscopes
899(16)
Giorgio Allegato
Carlo Valzasina
Luca Zanotti
46.1 Introduction
899(1)
46.2 Gyroscopes applications
899(1)
46.3 Gyroscope performance requirements
900(1)
46.4 Gyroscope working principles and architecture design
901(3)
46.5 Gyroscope technology architecture: key features and integration requirements
904(4)
46.6 System integration example: STMicroelectronics THELMA technology platform
908(3)
46.7 Packaging and calibration
911(2)
46.8 Conclusion
913(2)
References
913(2)
47 Pressure sensors
915(22)
Stephan Gerhard Albert
Sebastian Markus Luber
Bernhard Winkler
47.1 Sensor requirements
915(1)
47.2 Mechanical transducers
916(1)
47.3 Capacitive pressure sensors
917(8)
47.4 Piezoresistive pressure sensors
925(9)
47.5 Concluding remarks
934(3)
References
934(3)
48 Microphones
937(12)
Marc Fueldner
48.1 Introduction
937(1)
48.2 Microphone applications and performance parameter
937(1)
48.3 Microphone technologies
938(2)
48.4 Capacitive microelectromechanical systems microphone process flow
940(1)
48.5 Design and technology of microphone membranes
941(2)
48.6 Scaling the membrane size to increase signal-to-noise ratio
943(1)
48.7 Differential microelectromechanical systems sensor for low total harmonic distortion and high AOP
944(2)
48.8 Sealed dual membrane microphone for highest performance
946(1)
48.9 Conclusion
947(2)
References
947(2)
49 Micro mirrors
949(20)
Harald Schenk
Matthias Schulze
49.1 Introduction: micro-opto-mechanical-systems and their fields of application
949(1)
49.2 Electrostatically driven micro scanning mirrors fabricated by bulk micromachining
949(11)
49.3 Micro mirror arrays manufactured using surface micromachining
960(7)
49.4 Closing remark
967(2)
References
968(1)
50 MEMS-above CMOS and novel optical MEMS sensor concepts
969(16)
H.A.C. Tilmans
V. Rochus
R. Jansen
W.J. Westervelde
M. Mahmud-ul-hasan
S. Severi
B. Figeys
K. Lodewijks
S. Seema
X. Rottenberg
50.1 Introduction
969(1)
50.2 Monolithic SiCeMEMS-CMOS integration
969(5)
50.3 MEMS sensor with integrated optical readout
974(8)
50.4 Conclusions
982(3)
References
984(1)
Index 985
Markku Tilli obtained a degree in Materials Science (Physical Metallurgy) at Helsinki University of Technology (HUT) in 1974. Until 1980 he had various research and teaching positions at HUT specializing in crystal growth technologies. From 1981 to 1984 he managed process research and development in Silicon project at HUT silicon wafer manufacturing pilot plant. Since 1985 he has had various managing positions at Okmetic in research, development and customer support areas, and held a position of Senior Vice President, Research until his retirement in 2018. His MEMS related activities started in 1982 when he developed a process to make double side polished silicon wafers for bulk micromachined sensors. Since then he has developed advanced new silicon wafer types for MEMS, including special epitaxial wafers, SOI and SOI wafers with buried cavities. His publication topics include oxygen precipitation in silicon, silicon crystal growth, wafer cleaning as well as silicon wafer manufacturing technologies and applications in MEMS. He is member of the Technology Academy of Finland and has received the honorary degree of Doctor of Science in Engineering from Aalto University. Dr. Mervi Paulasto-Kröckel is professor at Aalto University School of Electrical Engineering in Finland. She studied materials science and semiconductor technology in Helsinki University of Technology, and gradudated as MSc Tech in 1990. She continued her studies in the Technical Universities of Aachen (RWTH Aachen) and Helsinki and attained her doctoral degree in 1995. After a 2-years post-doctoral appointment at the Joint Research Centre of European Commission in the Netherlands, her professional career continued in the electronics industry. She was a Staff Principal Engineer at Motorola Semiconductor Products Sector in Munich. In 2004 Paulasto-Kröckel joined Infineon Technologies where she was the Director Package Development responsible for semiconductor assembly and interconnect development for automotive products worldwide. At the end of 2018 Dr. Paulasto-Kröckel became a professor at Helsinki University of Technology, which is now called Aalto University after a merger with two other leading universities in the Helsinki area. Her current research focus is on advanced materials and interconnect technologies for MEMS/NEMS and power electronics, as well as multi-material assemblies behavior under different loads and their characteristic failure mechanisms. Her group has extensive experience in studying interactions and interfacial reactions between dissimilar materials, such as different oxide and nitride materials, metals and semiconductors. The group has developed a combined methodology approach to solve multi-materials compatibility issues in microelectronics and microsystems. Prof. Paulasto-Kröckel has over 110 international publications in the fields of microelectronics packaging and interfacial compatibility of dissimilar materials. She is IEEE EPS Distinguished Lecturer and a member of the Finnish Academy of Technical Sciences. Matthias Petzold is Professor, Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany. His research focuses on physical failure analysis of semiconductor materials, on strength and reliability properties of MEMS, on material diagnostics in microelectronics packaging and on innovative methods and instrumentation for microstructure diagnostics and mechanical testing. He is currently heading the institutes Center for Applied Microstructure Diagnostics (CAM) and is deputy director of the Fraunhofer institute for Microstructure of Materials and Systems IMWS in Halle. Horst Theuss is Lead Principal, Infineon Technologies AG, Germany, where he is today responsible for Backend predevelopments focusing on new packages for MEMS and sensors. Since 2000, he has worked on a variety of assembly technologies and concepts in the field of discrete semiconductors, wafer level packaging, cavity packaging, materials and integration concepts. Teruaki Motooka received PhD degree in 1981 in Applied Physics from Kyushu University. He was a research scientist in the Central Research Laboratory, Hitachi Ltd. for 1971-1984, a visiting research assistant professor at University of Illinois at Urbana-Champaign, USA for 1984-1988, an associate professor in the Institute of Applied Physics at University of Tsukuba, Japan for 1988-1993, and became a full professor at Kyushu University in 1993. He retired from Kyushu University in 2010. He has published more than 150 scientific papers on various international journals and these papers have been cited more than 2000 times. Veikko Lindroos is Professor Emeritus, Physical Metallurgy and Materials Science, Aalto University, Finland. His research covers a broad spectrum of materials science and technology, such as metallic materials, silicon technology and MEMS materials magnetic, electronic and composite materials as well as shape memory effect and materials.