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E-raamat: High k Gate Dielectrics

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  • Formaat: PDF+DRM
  • Ilmumisaeg: 01-Dec-2003
  • Kirjastus: Institute of Physics Publishing
  • Keel: eng
  • ISBN-13: 9781420034141
  • Formaat - PDF+DRM
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  • Formaat: PDF+DRM
  • Ilmumisaeg: 01-Dec-2003
  • Kirjastus: Institute of Physics Publishing
  • Keel: eng
  • ISBN-13: 9781420034141

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The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be required, making this is a subject of intensive research activity within the microelectronics community.

High k Gate Dielectrics reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the book first describes the various deposition techniques used for construction of layers at these dimensions. It then considers characterization techniques of the physical, chemical, structural, and electronic properties of these materials. The book also reviews the theoretical work done in the field and concludes with technological applications.
Foreword ix
SECTION 1: INTRODUCTION
1(14)
High-κ gate dielectrics: why do we need them?
3(12)
M. Houssa
Marc Heyns
SECTION 2: DEPOSITION TECHNIQUES
15(108)
Atomic layer deposition
17(48)
M. Ritala
Chemical vapour deposition
65(24)
S.A. Campbell
R.C. Smith
Pulsed laser deposition of dielectrics
89(34)
D. Blank
L. Doeswijk
K. Karakaya
G. Roster
G. Rijnders
SECTION 3: CHARACTERIZATION
123(168)
Oxygen diffusion
125(65)
R.M.C. de Almeida
I.J.R. Baumvol
Defects in stacks of Si with nanometre thick high-k dielectric layers: characterization and identification by electron spin resonance
190(27)
A Stesmans
V.V. Afanas'ev
Band alignment at the interface of Si and metals with high-permittivity insulating oxides
217(34)
V.V. Afanas'ev
A. Stesmans
Electrical characterization, modelling and simulation of MOS structures with high-k gate stacks
251(40)
J.L Autran
D Munteanu
M. Houssa
SECTION 4: THEORY
291(206)
Defects and defect-controlled behaviour in high-k materials: a theoretical perspective
293(32)
M. Stoneham
A. Shluger
A. Foster
M. Szymanski
Chemical bonding and electronic structure of high-k transition metal dielectrics: applications to interfacial band offset energies and electronically active defects
325(47)
G. Lucovsky
J. Whitten
Electronic structure and band offset of high dielectric constant gate oxides
372(25)
J. Robertson
P.W. Peacock
Reduction of the electron mobility in high-k MOS systems caused by remote scattering with soft interfacial optical phonons
397(34)
M.V. Fischetti
D.A. Neumayer
E. Cartier
Ab initio calculations of the structural, electronic and dynamical properties of high-k dielectrics
431(36)
G.M. Rignanese
X. Gonze
A. Pasquarello
Defect generation under electrical stress: experimental characterization and modelling
467(30)
M. Houssa
SECTION 5: TECHNOLOGICAL ASPECTS
497(100)
Device integration issues
499(25)
E.W.A. Young
V. Kaushik
Device architectures for the nano-CMOS era
524(36)
S. Deleonibus
High-k transistor characteristics
560(37)
J.C. Lee
K. Onishi
Appendix -- Properties of High-k Materials 597(2)
Index 599


Michel Houssa Laboratoire Materiaux et Microelectronique de Provence, Universite de Provence, France Silicon Processing and Device Technology Division, IMEC, Belgium