A collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, and damage and its annealing. Particular attention is paid to those techniques that provide two-dimensional profiles of damage and of dopants, a careful treatment of silicon-based devices, theshold voltage control, shallow junctions, minority carrier lifetime control by metallic ion implants, and high energy implants. Annotation copyright Book News, Inc. Portland, Or.
Ion Implantation: Basics to Device Fabrication is a collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Particular attention has been paid to those techniques that provide two-dimensional profiles of damage and of dopants, a careful treatment of silicon based devices, threshold voltage control, shallow junctions, minority carrier lifetime control by metallic ion implants, and high energy implants is given in this work.
This book, based on a course preceding the biannual Ion Implantation Technology Conference, is a valuable reference for physicists, chemists, materials scientists, processing, device production, device design, and ion beam engineers interested in any aspect of ion implantation, as well as a secondary text for a graduate course on the subject.
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