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1 Introduction and Research Impact |
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1 | (28) |
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1.1 Low-Noise Amplifier Research Contextualization: A Transmitter and Receiver System |
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3 | (4) |
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4 | (1) |
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1.1.2 The Receiver and the Role of a Low-Noise Amplifier |
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5 | (2) |
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1.2 Significance of Active and Passive Devices for Low-Noise Amplifier Research |
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7 | (2) |
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1.3 Significance of Device Packaging at Millimeter-Wave Range |
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9 | (1) |
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1.4 Practical Research Focus: Applications of Millimeter-Wave Low-Noise Amplifiers |
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9 | (2) |
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1.5 Identifying Research Gaps: Fundamental Principles of Operation of Low-Noise Amplifiers |
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11 | (8) |
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1.5.1 Low-Noise Amplifier Topologies |
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11 | (3) |
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1.5.2 Gain of the Low-Noise Amplifier |
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14 | (1) |
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1.5.3 Noise in Low-Noise Amplifiers |
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14 | (1) |
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1.5.4 Power Consumption and Efficiency |
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14 | (1) |
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15 | (1) |
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16 | (1) |
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1.5.7 Bandwidth and Gain Flatness |
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16 | (1) |
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17 | (1) |
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17 | (1) |
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1.5.10 Low-Noise Amplifier Linearity |
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18 | (1) |
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1.5.11 The Role of Electronic Design Automation |
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18 | (1) |
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1.6 Research Questions: Low-Noise Amplifier for Millimeter-Wave Applications |
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19 | (1) |
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1.7 Contribution to the Body of Knowledge |
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20 | (1) |
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20 | (9) |
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21 | (1) |
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22 | (1) |
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23 | (6) |
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Part I Research Contextualization: Dissecting the Low-Noise Amplifier---A Sum of Parts |
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2 Specification-Governed Telecommunication and High-Frequency-Electronics Aspects of Low-Noise Amplifier Research |
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29 | (48) |
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2.1 Frequency and Wavelength |
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30 | (1) |
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2.2 Frequency Spectrum and Transmission Bands |
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31 | (3) |
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2.3 The Millimeter-Wave Frequency Range |
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34 | (4) |
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2.3.1 Millimeter-Wave Bandwidth Allocations |
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34 | (2) |
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2.3.2 Propagation of Millimeter Waves |
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36 | (2) |
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2.4 Digital Modulation Schemes for Millimeter-Wave Applications |
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38 | (5) |
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39 | (1) |
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39 | (1) |
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2.4.3 Frequency Shift-Keying |
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40 | (1) |
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2.4.4 Pulse-Amplitude Modulation |
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41 | (1) |
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2.4.5 Quadrature Amplitude Modulation |
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41 | (1) |
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2.4.6 Orthogonal Frequency-Division Multiplexing |
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42 | (1) |
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2.5 Antennas for Millimeter-Waves |
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43 | (4) |
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2.5.1 General Antenna Theory |
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44 | (1) |
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2.5.2 Millimeter-Wave Antennas |
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45 | (2) |
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2.6 High-Frequency Electronics: Practical Two-Port Modeling of Low-Noise Amplifiers |
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47 | (3) |
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2.6.1 Admittance Parameters |
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47 | (1) |
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48 | (2) |
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2.7 Practical Amplifier Gain Relationships and Stability |
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50 | (5) |
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2.7.1 Reflection Coefficients |
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50 | (1) |
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51 | (3) |
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2.7.3 Amplifier Stability |
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54 | (1) |
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55 | (4) |
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2.8.1 Lumped Element Matching |
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55 | (2) |
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2.8.2 Transmission-Line Matching |
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57 | (2) |
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2.8.3 Matching and Constant Voltage Standing Wave Ratio |
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59 | (1) |
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59 | (1) |
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2.10 Broadband Amplifier Techniques |
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60 | (3) |
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2.11 Narrowband Amplifier Techniques |
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63 | (1) |
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64 | (5) |
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64 | (1) |
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65 | (1) |
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66 | (1) |
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66 | (1) |
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2.12.5 Minimum Noise Figure and Practical Amplifier Design |
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66 | (1) |
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67 | (1) |
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2.12.7 Noise Factor in a Cascaded System |
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68 | (1) |
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69 | (5) |
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2.13.1 Harmonic Distortion and Intermodulation Distortion |
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69 | (2) |
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71 | (1) |
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2.13.3 Third Order Intercept Point |
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72 | (1) |
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2.13.4 Amplifier Dynamic Range |
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73 | (1) |
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2.14 Performance Measure of a Low-Noise Amplifier |
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74 | (1) |
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74 | (3) |
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75 | (2) |
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3 Technologies for Low-Noise Amplifiers in the Millimeter-Wave Regime |
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77 | (34) |
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3.1 Transistor Technologies |
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78 | (7) |
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79 | (1) |
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80 | (2) |
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3.1.3 High-Electron Mobility Transistor Technology |
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82 | (1) |
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3.1.4 Heterojunction Bipolar Transistor Technology |
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82 | (2) |
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84 | (1) |
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3.1.6 Comparative Analysis |
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84 | (1) |
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3.2 Substrates for Discrete Implementations and Silicon on Package |
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85 | (1) |
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3.3 Transistor Modeling for Small-Signal Operation |
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86 | (12) |
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87 | (6) |
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93 | (5) |
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3.4 Transistor Modeling for Noise |
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98 | (9) |
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99 | (2) |
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101 | (2) |
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103 | (2) |
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3.4.4 Noise Figure in HBTs and MOSFETs |
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105 | (2) |
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107 | (4) |
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108 | (3) |
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4 Passives for Low-Noise Amplifiers |
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111 | (40) |
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112 | (1) |
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113 | (7) |
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4.2.1 Types of Transmission Lines |
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114 | (1) |
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4.2.2 General Transmission Line |
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115 | (2) |
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4.2.3 The Quarter-Wave Transformer |
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117 | (3) |
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120 | (2) |
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122 | (5) |
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4.4.1 Discrete Capacitors |
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123 | (1) |
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4.4.2 Integrated Capacitors |
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123 | (3) |
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4.4.3 Transmission-Line Capacitors |
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126 | (1) |
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127 | (18) |
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128 | (1) |
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4.5.2 Integrated Active Inductors |
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129 | (1) |
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130 | (1) |
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131 | (1) |
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131 | (10) |
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4.5.6 Micro-Electro-Mechanical System Inductors |
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141 | (1) |
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4.5.7 Transmission-Line Inductors |
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142 | (1) |
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4.5.8 Other On-Chip Inductor Implementations |
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143 | (1) |
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144 | (1) |
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4.6 Transformers and Baluns |
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145 | (2) |
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147 | (4) |
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147 | (4) |
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5 General Low-Noise Amplifiers |
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151 | (24) |
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5.1 Research, Design and Development Considerations for Millimeter-Wave Applications |
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152 | (1) |
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5.2 Single-Ended Low-Noise Amplifiers |
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153 | (16) |
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154 | (3) |
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5.2.2 The Cascode Topology |
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157 | (1) |
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5.2.3 Modeling and Equations of the Cascode Configuration |
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158 | (10) |
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5.2.4 Two-Port Parameters |
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168 | (1) |
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5.2.5 Single-Ended Topologies for Millimeter-Wave Application |
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169 | (1) |
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5.3 Differential Low-Noise Amplifiers |
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169 | (3) |
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172 | (3) |
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172 | (3) |
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6 Broadband Low-Noise Amplifiers |
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175 | (32) |
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6.1 Popular Broadband Topologies |
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176 | (4) |
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6.1.1 Traditional Configurations: Common-Source and Cascode Low-Noise Amplifiers |
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176 | (2) |
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6.1.2 Feedback Configurations |
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178 | (1) |
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6.1.3 Cascaded Low-Noise Amplifiers |
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178 | (2) |
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6.2 Modeling and Equations |
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180 | (8) |
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6.2.1 Cascode Low-Noise Amplifiers |
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180 | (2) |
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6.2.2 Resistive Feedback Configuration |
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182 | (2) |
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6.2.3 LC-Ladder Low-Noise Amplifiers with Capacitive Shunt-Shunt Feedback |
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184 | (4) |
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188 | (1) |
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6.4 Wideband Matching Techniques |
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188 | (4) |
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6.5 Multi-stage Topologies for Millimeter-Wave Applications |
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192 | (1) |
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6.6 Distributed and Inductive-Peaking Techniques for Bandwidth Expansion |
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193 | (5) |
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6.7 Other Broadband Techniques |
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198 | (3) |
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201 | (6) |
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202 | (5) |
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Part II Research Execution: State-of-the-Art Low-Noise Amplifiers, Techniques for of Optimization of Low-Noise Amplifier Parts |
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7 State-of-the-Art Low-Noise Amplifiers in the Millimeter-Wave Regime |
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207 | (46) |
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7.1 State-of-the-Art Cascode Configurations |
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208 | (9) |
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7.1.1 A 60-GHz BiCMOS Low-Noise Amplifier Deploying a Conductive Path to Ground |
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208 | (1) |
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7.1.2 A 77-GHz BiCMOS Low-Power Low-Noise Amplifier |
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209 | (2) |
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7.1.3 A 33--34 GHz Narrowband Low-Noise Amplifier with Low Noise Figure |
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211 | (1) |
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7.1.4 A 70--100 GHz Wideband Low-Noise Amplifier with Split Inductor Output Matching |
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212 | (1) |
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7.1.5 Triple and Quadruple CMOS Cascode Low-Noise Amplifiers |
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213 | (2) |
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7.1.6 A 60-GHz Two-Stage Cascode CMOS Low-Noise Amplifier with Middle Inductors |
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215 | (1) |
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7.1.7 Other Configurations |
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215 | (2) |
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7.1.8 Performance Analysis |
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217 | (1) |
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7.1.9 Weaknesses of the State-of-the-Art Configurations |
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217 | (1) |
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7.2 State-of-the-Art Differential Configurations |
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217 | (6) |
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7.2.1 120-GHz BiCMOS Two-Stage Differential Cascode Low-Noise Amplifier |
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218 | (1) |
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7.2.2 120-GHz CMOS Transformer-Matched Four-Stage Common Source Low-Noise Amplifier |
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219 | (1) |
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7.2.3 Load-Isolated Transformer-Feedback CMOS Low-Noise Amplifier at 60 GHz |
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220 | (1) |
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7.2.4 Performance Analysis |
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221 | (1) |
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7.2.5 Weaknesses of the State-of-the-Art Configurations |
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221 | (2) |
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7.3 Complex Wideband State-of-the-Art Configurations |
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223 | (17) |
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7.3.1 A Linear Low-Power-Consumption BiCMOS Two-Stage Transformer-Coupled Cascode-Cascade Low-Noise Amplifier |
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223 | (1) |
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7.3.2 Three-Stage Low-Power CMOS Low-Noise Amplifier with High Gm × Rout Transconductance Cells |
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224 | (1) |
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7.3.3 W-Band Low-Noise Amplifier for Millimeter-Wave Imaging Applications |
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225 | (2) |
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7.3.4 71--86-GHz BiCMOS Low-Noise Amplifier as Part of a Bidirectional Power Amplifier/Low-Noise Amplifier System |
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227 | (1) |
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7.3.5 A 71-81 GHz CMOS Low-Noise Amplifier |
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228 | (1) |
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7.3.6 An E-Band pHEMT GaAs Low-Noise Amplifier |
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229 | (2) |
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7.3.7 A Q/V-Band pHEMT GaAs Low-Noise Amplifier with Noise Figure Less Than 2 dB |
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231 | (1) |
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7.3.8 A 68--110-GHz InP HEMT Common-Gate Low-Noise Amplifier |
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232 | (1) |
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7.3.9 A 30-GHz-Wide Low-Noise Amplifier Using a Pole-Converging Interstage Bandwidth Extension Technique |
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233 | (4) |
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7.3.10 A 190-GHz BiCMOS Low-Noise Amplifier for Ultra-Large Bandwidth Applications |
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237 | (1) |
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7.3.11 Other Configurations |
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238 | (1) |
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7.3.12 Performance Analysis |
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238 | (2) |
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7.3.13 Weaknesses of the State-of-the-Art Configuration |
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240 | (1) |
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7.4 State-of-the-Art Configurations Reaching Beyond 200 GHz |
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240 | (7) |
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7.4.1 A 245 GHz Narrowband BiCMOS Low-Noise Amplifier |
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240 | (2) |
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7.4.2 160--270 GHz InP HEMT Low-Noise Amplifiers |
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242 | (2) |
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7.4.3 A Common-Source and Cascode mHEMT Low-Noise Amplifier for Applications at 325 GHz |
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244 | (1) |
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7.4.4 A 670 GHz InP HEMT Low-Noise Amplifier |
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245 | (1) |
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7.4.5 Performance Analysis |
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246 | (1) |
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7.4.6 Weaknesses of the State-of-the Art Configuration |
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247 | (1) |
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7.5 Low-Noise Amplifier Optimization |
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247 | (2) |
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249 | (4) |
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250 | (3) |
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8 Advanced Low-Noise Amplifier Optimization Topics |
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253 | (34) |
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8.1 General Considerations Leading to Optimum Low-Noise Amplifier Designs |
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254 | (8) |
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8.1.1 Component and Interstage Connection Losses |
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254 | (1) |
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255 | (1) |
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8.1.3 Feasibility of Component Values |
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255 | (1) |
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8.1.4 Influence of the Frequency and the Wavelength |
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256 | (1) |
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256 | (2) |
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8.1.6 Design Rule Checks and Technology Considerations |
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258 | (1) |
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258 | (1) |
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8.1.8 Bond-Pad Considerations |
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259 | (1) |
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8.1.9 Bond-Wire Considerations |
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260 | (1) |
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8.1.10 Package Leads Considerations |
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260 | (2) |
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8.2 Optimization Through Improved Packaging |
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262 | (5) |
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8.2.1 Wafer-Level Chip-Scale Packaging (Microbumping) |
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262 | (1) |
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8.2.2 IC/Package Co-design |
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263 | (1) |
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263 | (1) |
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8.2.4 System on Package and System in Package |
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264 | (2) |
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8.2.5 Embedded Wafer Level Ball Grid Array Packaging |
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266 | (1) |
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8.3 Advanced Fabrication Techniques |
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267 | (4) |
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8.4 Minimizing Passive Parasitic Effects |
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271 | (13) |
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8.4.1 Passive Components on Chip |
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271 | (7) |
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8.4.2 Embedded Passive Components |
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278 | (3) |
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8.4.3 LNA/Antenna Co-design with Integrated Antennas and Antennas on Package |
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281 | (1) |
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8.4.4 Switches and Tunability |
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282 | (2) |
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284 | (3) |
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284 | (3) |
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9 Low-Noise Amplifier Optimization via Electronic Design Automation |
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287 | (42) |
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9.1 Current State of Electronic Design Automation |
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288 | (3) |
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9.2 Optimum Design of Passive Components |
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291 | (16) |
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9.2.1 Performance Optimization by Synthesizing Optimum Spiral Inductors and Transformers |
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291 | (10) |
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9.2.2 Offline Optimization of RF Inductors by Introducing Optimal Performance Trade-Offs |
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301 | (2) |
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9.2.3 Optimum Design of Bond Wires |
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303 | (2) |
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9.2.4 Streamlined Design of Transmission-Line Passives |
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305 | (2) |
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9.3 Optimum Design of Matching Networks |
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307 | (5) |
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9.4 Low-Noise Amplifier Electronic Design Automation Techniques |
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312 | (12) |
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9.4.1 Optimizing Low-Noise Amplifiers by Optimizing S-Parameters with and Without the Backtracking Search |
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312 | (4) |
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9.4.2 Simulation-Based Evolutionary LNA Design Optimization |
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316 | (1) |
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9.4.3 Offline Optimization of LNAs |
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317 | (1) |
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9.4.4 In-House Techniques for Streamlining and Optimization of Low-Noise Amplifier Designs |
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318 | (1) |
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9.4.5 CMOS Low-Noise Amplifier Optimization Based on Regions of Operation |
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319 | (4) |
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9.4.6 Complete Low-Noise Amplifier Integration |
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323 | (1) |
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9.5 Receiver Design Using Computational Intelligence |
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324 | (3) |
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9.5.1 Choosing Receiver Topology |
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326 | (1) |
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9.5.2 Receiver Chain Parameter Distribution |
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326 | (1) |
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327 | (2) |
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328 | (1) |
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10 Evaluation of the Hypothesis and Research Questions, Final Remarks and Future Research |
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329 | (5) |
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10.1 Evaluation of the Hypothesis and Research Questions |
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329 | (2) |
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10.1.1 Research Question 1 |
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329 | (1) |
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10.1.2 Research Question 2 |
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329 | (1) |
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10.1.3 Research Question 3 |
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330 | (1) |
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10.1.4 Research Question 4 |
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330 | (1) |
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330 | (1) |
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10.2 Remaining Research Gaps and Opportunities for Enhancement |
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331 | (1) |
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332 | (1) |
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10.4 Concluding Proposal: Streamlined Flow for Low-Noise Amplifier Design Deploying Custom Electronic Design Automation |
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332 | (2) |
Reference |
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