In this volume, researchers and engineers showcase experimental, analytical, and numerical methods to tackle barrier-overcoming difficulties with the application of nanoscale device technology. The ongoing reduction in the size of devices, components, and systems necessitates advanced theoretical analysis that is backed by simulated results prior to actual production. The volume presents research that will be helpful for creating interdisciplinary, all-encompassing technical products that addresses underlying physics, material aspects, and structures in the nano-regime.
The chapters cover a range of issues in nanodevice design and applications, taking into account correct computation for complicated band structure, composition of the heterostructure system, and, more specifically, the technique of computation in the manufacturing of low-dimensional structures. The book provides clear treatment of several intricate theoretical and analytical models for resolving issues and presenting important aspects of the performance of various low-dimensional devices.
Numerous numerical techniques have been employed in the past to solve quantum well systems, with the Finite Element Method (FEM) and Finite Domain Time Difference (FDTD) approaches being the most optimal solution to date. The book provides clear treatment of several intricate theoretical and analytical models for resolving issues with diverse nanodevices .
Presenting cutting-edge topics on nanoelectronic device technology from several perspectives, the volume will be valuable for the computing and telecommunication industries as well as for faculty and students in these areas.
Showcases experimental methods and/or analytical/numerical techniques to overcome difficulties with the application of nanoscale device technology. Covers nanodevice design and applications, taking into account band structure, composition of the heterostructure system, and computation techniques for manufacturing low-dimensional structures.
Preface
1. A Structural Roadmap from Double Gate MOSFET to Junctionless
Transistor: Comprehensive Review
2. Design and Implementation of
Fault-Tolerant Convolutional Neural Networks for Safety-Critical Embedded
Systems
3. Impact of Electromagnetic Bandgap Structure Incorporated in Square
Microstrip Patch Antenna
4. VLSI and Random S-Box-Based IoT Security by
Variable Irreducible Polynomial GF (28) in Composite Field Arithmetic
5.
Recent Advances in Slotted Waveguide Antenna Design for Its Use in Modern
Microwave Remote Sensing
6. Missing Cell Defect Analysis of Reversible 1-bit
Magnitude Comparator
7. Investigation of Optoelectronic Characteristics of
Double Quantum Well Structure for Triangular Well Geometry
8. An Architecture
for High-Gain Multi-Stage CMOS Amplifiers: A Review
9. Analysis and
Applications of MOSFET-Based Memristor in Analog and Digital Circuit
10.
Characterization of GO, rGO and PEI Doped Graphene Nanocomposites for
Biosensor Applications
11. A Numerical Approach to Investigate the Effect of
Work Function on the Important Cell Parameters of Heterojunction Solar Cells
12. Design and Comparative Analysis of Different Geometric Structures of
Micro-Cantilever Diaphragm for Biosensor Applications
13. Design of a
Sensitivity Improved Surface Plasmon Resonance (SPR) Sensor with Barium
Titanate (BaTiO3) and Blue Phosphorus-Tungsten Disulphide (BlueP-WS2) /Black
Phosphorous (Black P) Hybrid Structure Index
Arpan Deyasi, PhD, is an Associate Professor of Electronics and Communication Engineering at the RCC Institute of Information Technology, Kolkata, India. He has more than 18 years of professional experience in academia and industry. His work revolves around the field of semiconductor nanostructures and semiconductor photonics. He has published more than 200 peer-reviewed research papers and edited eight books, with four more in press. He has completed several funded projects and served as a technical consultant on various industrial projects. He is associated with different international and national conferences in various roles and also serves as guest editor of a few renowned journals. Dr. Deyasi has served as a resource person for several seminars, workshops, and conferences.
Angsuman Sarkar, PhD, is a Professor and Head of Electronics and Communication Engineering at Kalyani Government Engineering College, West Bengal, India. His current research interest involves the study of short channel effects of sub 100nm MOSFETs and nanodevice modeling. He has authored six books, over 20 book chapters, nearly 100 journal papers in international refereed journals, and over 50 research papers in national and international conferences. He is featured in the list of the worlds top 2% of scientists from the Indian subcontinent in the field of nanoscience and nanotechnology, per Stanford University and Elsevier. He is a member of the boards of editors of various journals and is a reviewer for various international journals. He is currently supervising several PhD scholars and has already guided several students successfully as principal supervisor. He has delivered invited talks, tutorial speeches, and expert talks at international conferences, and technical programs. He has organized IEEE international conferences and several workshops and seminars.
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